FR156G [SSE]

GLASS PASSIVATED FAST RECOVERY RECTIFIER; 玻璃钝化快速恢复整流


型号：	FR156G
厂家：	SHANGHAI SUNRISE ELECTRONICS
描述：	GLASS PASSIVATED FAST RECOVERY RECTIFIER 玻璃钝化快速恢复整流快速恢复二极管
文件：	总1页 (文件大小：18K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SHANGHAI SUNRISE ELECTRONICS CO., LTD.

FR151G THRU FR157G

GLASS PASSIVATED

TECHNICAL

SPECIFICATION

FAST RECOVERY RECTIFIER

VOLTAGE: 50 TO 1000V CURRENT: 1.5A

FEATURES

• Molded case feature for auto insertion

DO - 15

• Glass passivated chip

• High current capability

• Low leakage current

• Fast switching for high efficiency

• High surge capability

• High temperature soldering guaranteed:

250^oC/10sec/0.375"(9.5mm) lead length

at 5 lbs tension

MECHANICAL DATA

• Terminal: Plated axial leads solderable per

MIL-STD 202E, method 208C

• Case: Molded with UL-94 Class V-O

recognized flame retardant epoxy

• Polarity: Color band denotes cathode

• Mounting position: Any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25^oC, unless otherwise stated, for capacitive

load, derate current by 20%)

RATINGS

SYMBOL

UNITS

151G 152G 153G 154G 155G 156G 157G

V_RRM

V_RMS

V_DC

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

100 200 400 600 800 1000

70 140 280 420 560 700

Maximum DC Blocking Voltage

100 200 400 600 800 1000

Maximum Average Forward Rectified Current

I_F(AV)

I_FSM

V_F

1.5

(9.5mm lead length, at T_a=55^oC)

Peak Forward Surge Current (8.3ms single

half sine-wave superimposed on rated load)

Maximum Instantaneous Forward Voltage

(at rated forward current )

60.0

1.3

T_a=25^oC

T_a=100^oC

5.0

Maximum DC Reverse Current

µA

I_R

100

(at rated DC blocking voltage)

150

500

Maximum Reverse Recovery Time (Note 1)

trr

C_J

250

^oC/W

^oC

Typical Junction Capacitance

Typical Thermal Resistance

(Note 2)

(Note 3)

R_θ(ja)

-65 to +150

_STG,T_J

Storage and Operation Junction Temperature

Note:

1.Reverse recovery condition I_F=0.5A, I_R=1.0A, Irr=0.25A

2.Measured at 1.0 MHz and applied voltage of 4.0V_dc

3.Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C. board mounted

http://www.sse-diode.com

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