FR302G [SSE]

GLASS PASSIVATED FAST RECOVERY RECTIFIER; 玻璃钝化快速恢复整流


型号：	FR302G
厂家：	SHANGHAI SUNRISE ELECTRONICS
描述：	GLASS PASSIVATED FAST RECOVERY RECTIFIER 玻璃钝化快速恢复整流二极管瞄准线功效快速恢复二极管
文件：	总1页 (文件大小：18K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SHANGHAI SUNRISE ELECTRONICS CO., LTD.

FR301G THRU FR307G

GLASS PASSIVATED

TECHNICAL

SPECIFICATION

FAST RECOVERY RECTIFIER

VOLTAGE: 50 TO 1000V CURRENT: 3.0A

FEATURES

• Molded case feature for auto insertion

DO - 201AD

• Glass passivated chip

• High current capability

• Low leakage current

• Fast switching for high efficiency

• High surge capability

• High temperature soldering guaranteed:

250^oC/10sec/0.375"(9.5mm) lead length

at 5 lbs tension

MECHANICAL DATA

• Terminal: Plated axial leads solderable per

MIL-STD 202E, method 208C

• Case: Molded with UL-94 Class V-O

recognized flame retardant epoxy

• Polarity: Color band denotes cathode

• Mounting position: Any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25^oC, unless otherwise stated, for capacitive load,

derate current by 20%)

RATINGS

SYMBOL

UNITS

301G 302G 303G 304G 305G 306G 307G

V_RRM

V_RMS

V_DC

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

100

200

140

200

400

280

400

600

420

600

800 1000

560 700

800 1000

Maximum DC Blocking Voltage

100

Maximum Average Forward Rectified Current

(9.5mm lead length, at T_a=55^oC)

I_F(AV)

3.0

Peak Forward Surge Current (8.3ms single

half sine-wave superimposed on rated load)

Maximum Instantaneous Forward Voltage

(at rated forward current )

I_FSM

V_F

125

1.3

T_a=25^oC

5.0

Maximum DC Reverse Current

µA

I_R

T_a=100^oC

100

(at rated DC blocking voltage)

150

500

Maximum Reverse Recovery Ti

Typical Junction Capacitance

Typical Thermal Resistance

(Note 1)

(Note 2)

(Note 3)

trr

C_J

250

^oC/W

^oC

R_θ(ja)

-65 to +150

_STG,T_J

Storage and Operation Junction Temperature

Note:

1.Reverse recovery condition I_F=0.5A, I_R=1.0A, Irr=0.25A

2.Measured at 1.0 MHz and applied voltage of 4.0V_dc

3.Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C. board mounted

http://www.sse-diode.com

相关型号：