SB1660C [SSE]

SCHOTTKY BARRIER RECTIFIER; 肖特基势垒整流器
SB1660C
型号: SB1660C
厂家: SHANGHAI SUNRISE ELECTRONICS    SHANGHAI SUNRISE ELECTRONICS
描述:

SCHOTTKY BARRIER RECTIFIER
肖特基势垒整流器

文件: 总1页 (文件大小:25K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SHANGHAI SUNRISE ELECTRONICS CO., LTD.  
SB1620C THRU SB1660C  
SCHOTTKY BARRIER  
RECTIFIER  
TECHNICAL  
SPECIFICATION  
VOLTAGE: 20 TO 60V CURRENT: 16A  
FEATURES  
• Epitaxial construction for chip  
TO-220  
• High current capability  
• Low forward voltage drop  
• Low power loss, high efficiency  
• High surge capability  
• High temperature soldering guaranteed:  
250oC/10sec/0.375"(9.5mm) lead length  
at 5 lbs tension  
MECHANICAL DATA  
• Terminal: Plated leads solderable per  
MIL-STD 202E, method 208C  
• Case: Molded with UL-94 Class V-O  
recognized flame retardant epoxy  
• Polarity: Common cathode,Suffix"A"Common anode  
• Mounting position: Any  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load,  
derate current by 20%)  
SB  
SB  
SB  
SB  
SB  
SB  
RATINGS  
SYMBOL  
UNITS  
1620C 1630C 1635C 1640C 1650C 1660C  
VRRM  
VRMS  
VDC  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
20  
14  
20  
30  
21  
30  
35  
25  
35  
40  
28  
40  
50  
35  
50  
60  
42  
60  
V
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
(TC=95oC)  
IF(AV)  
16  
A
A
Peak Forward Surge Current (8.3ms single  
half sine-wave superimposed on rated load)  
Maximum Forward Voltage (at 8.0A DC)  
IFSM  
VF  
IR  
150  
0.65  
700  
0.75  
500  
V
mA  
mA  
pF  
oC/W  
oC  
oC  
Ta=25oC  
Ta=100oC  
5.0  
Maximum DC Reverse Current  
50.0  
(at rated DC blocking voltage)  
CJ  
Rθ(ja)  
TJ  
Typical Junction Capacitance  
Typical Thermal Resistance  
Operating Junction Temperature  
(Note 1)  
(Note 2)  
3
-65 to +125  
-65 to +150  
-65 to +150  
TSTG  
Storage Temperature  
Note:  
1.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc  
2.Thermal resistance from junction to case  
3. Suffix "A" common anode  
http://www.sse-diode.com  

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