US1A [SSE]
SURFACE MOUNT ULTRA FAST SWITCHING RECTIFIER; 表面装载超快速开关整流器
| 型号： | US1A |
| 厂家： | 
SHANGHAI SUNRISE ELECTRONICS |
| 描述： | SURFACE MOUNT ULTRA FAST SWITCHING RECTIFIER |
| 文件： | 总1页 (文件大小：19K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
US1A THRU US1M
SURFACE MOUNT ULTRA
FAST SWITCHING RECTIFIER
TECHNICAL
SPECIFICATION
VOLTAGE: 50 TO 1000V CURRENT: 1.0A
FEATURES
• Ideal for surface mount pick and
place application
SMA/DO-214AC
B
• Low profile package
A
F
C
• Built-in strain relief
• High surge capability
D
• Glass passivated chip
• Ultra fast recovery for high efficiency
• High temperature soldering guaranteed:
260oC/10sec/at terminal
H
G
MECHANICAL DATA
A
B
C
D
• Terminal: Plated leads solderable per
MAX. .110(2.79) .177(4.50) .058(1.47) .012(0.305)
MIN. .100(2.54) .157(3.99) .052(1.32) .006(0.152)
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
E
F
G
H
MAX. .208(5.28) .090(2.29) .008(0.203) .060(1.52)
MIN. .194(4.93) .078(1.98) .004(0.102) .030(0.76)
Dimensions in inches and (illimeters)
• Polarity: Color band denotes cathode
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load,
derate current by 20%)
US US US US US US US
RATINGS
SYMBOL
UNITS
1A
50
35
50
1B
100 200 400 600 800 1000
70 140 280 420 560 700
1D 1G
1J
1K 1M
VRRM
VRMS
VDC
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
V
V
V
Maximum DC Blocking Voltage
100 200 400 600 800 1000
Maximum Average Forward Rectified Current
(TL=100oC)
IF(AV)
1.0
A
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
(at rated forward current)
IFSM
VF
30
A
V
1.0
1.4
1.7
Ta=25oC
5.0
Maximum DC Reverse Current
µA
µA
IR
Ta=100oC
200
(at rated DC blocking voltage)
50
20
75
10
Maximum Reverse Recovery Time
Typical Junction Capacitance
Typical Thermal Resistance
(Note 1)
(Note 2)
(Note 3)
trr
CJ
nS
pF
oC/W
oC
32
Rθ(ja)
-50 to +150
T
STG,TJ
Storage and Operation Junction Temperature
Note:
1.Reverse recovery condition IF=0.5A, IR=1.0A,Irr=0.25A.
2.Measured at 1.0 MHz and applied voltage of 4.0Vdc
3.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area
http://www.sse-diode.com
相关型号：
US1A-HE3
DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode
VISHAY
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