SGA-3263 [STANFORD]

DC-5500 MHz, CASCADABLE SIGE HBT MMIC AMPLIFIER; DC -5500兆赫，可级联的SiGe HBT MMIC放大器


型号：	SGA-3263
厂家：	STANFORD MICRODEVICES
描述：	DC-5500 MHz, CASCADABLE SIGE HBT MMIC AMPLIFIER DC -5500兆赫，可级联的SiGe HBT MMIC放大器放大器射频微波
文件：	总4页 (文件大小：256K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Preliminary

Product Description

SGA-3263

Stanford MicrodevicesSGA-3263 is a high performance SiGe

HeterojunctionBipolarTransistorMMICAmplifier# ADarlington

configuration featuring 1 micron emitters provides high F_Tand

excellent thermal perfomance# The heterojunction increases

breakdown voltage and minimizes leakage current between

junctions# Cancellation of emitter junction non-linearities results

in higher suppression of intermodulation products# At 850 Mhz

and 35mA , the SGA-3263 typically provides +26#2 dBm output

IP3, 14#4 dB of gain, and +11#6 dBm of 1dB compressed power

using a single positive voltage supply# Only 2 DC-blocking

capacitors, a bias resistor and an optional RF choke are required

for operation#

DC-5500 MHz, Cascadable

SiGe HBT MMIC Amplifier

Product Features

High Gain : 13ꢀ6 dB at 1950 MHz

Gain & Return Loss vsꢀ Frequency

V_D= 2ꢀ6 V, I_D= 35 mA (Typꢀ)

Cascadable 50 Ohm

Patented SiGe Technology

Operates From Single Supply

Low Thermal Resistance Package

GAIN

-10

-20

-30

-40

IRL

Applications

Cellular, PCS, CDPD

Wireless Data, SONET

Satellite

ORL

T_L=+25ºC

Frequency (GHz)

Symbol

Parameter

Small Signal Gain

Units

Frequency

Minꢀ

Typꢀ

Maxꢀ

850 MHz

1950 MHz

2400 MHz

13ꢀ0

14ꢀ4

13ꢀ6

13ꢀ3

15ꢀ8

dBm

850 MHz

1950 MHz

11ꢀ6

10ꢀ9

P_1dB

Output Power at 1dB Compression

dBm

850 MHz

1950 MHz

26ꢀ2

24ꢀ1

Output Third Order Intercept Point

(Power out per tone = -5dBm)

OIP₃

Bandwidth

IRL

Determined by Return Loss (<-10dB)

Input Return Loss

MHz

5500

20ꢀ3

21ꢀ5

3ꢀ8

1950 MHz

ORL

Output Return Loss

Noise Figure

Device Voltage

2ꢀ3

2ꢀ6

2ꢀ9

V_D

Thermal Resistance

°C/W

255

R_Th

V_S= 5 V

R_BIAS= 68 Ohms

I_D= 35 mATyp#

T_L= 25ºC

OIP₃ToneSpacing=1MHz, Poutpertone=-5dBm

Z_S= Z_L= 50 Ohms

Test Conditions:

The information provided herein is believed to be reliable at press timeꢀ Stanford Microdevices assumes no responsibility for inaccuracies or omissionsꢀ

Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own riskꢀ Prices and specifications are

subject to change without noticeꢀ No patent rights or licenses to any of the circuits described herein are implied or granted to any third partyꢀ Stanford Microdevices does not

authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systemsꢀ

726 Palomar Aveꢀ, Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://wwwꢀstanfordmicroꢀcom

EDS-100632 Rev B

Preliminary

SGA-3263 DC-5500 MHz Cascadable MMICAmplifier

Typical RF Performance at Key Operating Frequencies

Frequency (MHz)

Symbol

Parameter

Small Signal Gain

Unit

100

500

14ꢀ6

26ꢀ1

11ꢀ4

25ꢀ6

22ꢀ9

18ꢀ4

3ꢀ7

850

1950

13ꢀ6

24ꢀ1

10ꢀ9

20ꢀ3

21ꢀ5

19ꢀ1

3ꢀ8

2400

13ꢀ3

22ꢀ6

10ꢀ1

20ꢀ4

19ꢀ4

19ꢀ1

4ꢀ3

3500

14ꢀ8

14ꢀ4

26ꢀ2

11ꢀ6

23ꢀ6

28ꢀ0

18ꢀ6

3ꢀ6

12ꢀ5

OIP₃

P_1dB

IRL

Output Third Order Intercept Point

Output Power at 1dB Compression

Input Return Loss

dBm

27ꢀ0

20ꢀ8

18ꢀ2

21ꢀ8

22ꢀ7

18ꢀ9

ORL

S₁₂

Output Return Loss

Reverse Isolation

Noise Figure

V = 5 V

V_S_S= 8 V

I = 20 mA Typ#

I_D_D= 80 mA Typ#

T = 25ºC

T_L_L= 25ºC

OIP ToneSpacing=1MHz, Poutpertone=-5dBm

OIP ToneSpacing=1MHz, Poutpertone=0dBm

Z = Z = 50 Ohms

Z_S_S= Z_L_L= 50 Ohms

Test Conditions:

= 68 Ohms

R_B_B_I_I_A_A_S_S= 39 Ohms

Absolute Maximum Ratings

Noise Figure vsꢀ Frequency

V_D= 2ꢀ6 V, I_D= 35 mA (Typꢀ)

Parameter

Absolute Limit

70 mA

Maxꢀ Device Current (I_D)

Maxꢀ Device Voltage (V_D)

Maxꢀ RF Input Power

4 V

+5 dBm

Maxꢀ Junction Tempꢀ (T_J)

Operating Tempꢀ Range (T_L)

+150°C

-40°C to +85°C

+150°C

Maxꢀ Storage Temp

ꢀ

Operation of this device beyond any one of these limits may

cause permanent damageꢀ

T_L=+25ºC

2.5 3

Bias Conditions should also satisfy the following

expression: I_DV_D(max) < (T_J- T_L)/R_th

0.5

1.5

Frequency (GHz)

OIP₃vsꢀ Frequency

P_1dBvsꢀ Frequency

V_D= 2ꢀ6 V, I_D= 35 mA (Typꢀ)

T_L=+25ºC

0.5

1.5

2.5

0.5

1.5

2.5

Frequency (GHz)

726 Palomar Aveꢀ, Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://wwwꢀstanfordmicroꢀcom

EDS-100632 Rev B

Preliminary

SGA-3263 DC-5500 MHz Cascadable MMICAmplifier

|S₂₁| vsꢀ Frequency

V_D= 2ꢀ6 V, I_D= 35 mA (Typꢀ)

|S₁₁| vsꢀ Frequency

V_D= 2ꢀ6 V, I_D= 35 mA (Typꢀ)

-10

-20

-30

+25°C

-40°C

+85°C

+25°C

-40°C

+85°C

T_L

-40

Frequency (GHz)

|S₁₂| vsꢀ Frequency

V_D= 2ꢀ6 V, I_D= 35 mA (Typꢀ)

|S₂₂| vsꢀ Frequency

V_D= 2ꢀ6 V, I_D= 35 mA (Typꢀ)

-10

-20

-30

-40

-10

-15

-20

-25

-30

+25°C

-40°C

+85°C

+25°C

-40°C

+85°C

T_L

Frequency (GHz)

NOTE: Full S-parameter data available at wwwꢀstanfordmicroꢀcom

726 Palomar Aveꢀ, Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://wwwꢀstanfordmicroꢀcom

EDS-100632 Rev B

Preliminary

SGA-3263 DC-5500 MHz Cascadable MMICAmplifier

BasicApplication Circuit

Application Circuit Element Values

R_BIAS

Frequency (Mhz)

Reference

V_S

Designator

500

850

1950

2400

3500

1000

C_D

1 uF

C_B

C_D

L_C

220 pF 100 pF

68 pF

22 pF

22 nH

56 pF

22 pF

18 nH

39 pF

15 pF

15 nH

100 pF

68 nH

68 pF

33 nH

L_C

1,2

3 _SGA-3263

RF in

RF out

Recommended Bias Resistor Values for I_D=35mA

C_B

Supply Voltage(V_S)

R_BIAS

5 V

8 V

150

10 V 12 V

200 270

4,5

Note: R_BIASprovides DC bias stability over temperature#

V_S

1 uF

R_BIAS

1000 pF

Mounting Instructions

C_D

L_C

1ꢀ Use a large ground pad area near device pins 1, 2,

4, and 5 with many plated through-holes as shownꢀ

C_B

3ꢀ We recommend 1 or 2 ounce copperꢀ Measurements

for this data sheet were made on a 31 mil thick FR-4

board with 1 ounce copper on both sidesꢀ

Pin # Function

Description

Part Identification Marking

RF IN RF input pin# This pin requires the use

of an external DC blocking capacitor

The part will be marked with an A32 designator on

the top surface of the package#

chosen for the frequency of operation#

GND

Connection to ground# Use via holes for

best performance to reduce lead

inductance as close to ground leads as

possible#

6 5 4

A32

RF OUT/ RF output and bias pin# DC voltage is

BIAS

present on this pin, therefore a DC

blocking capacitor is necessary for

proper operation#

1 2 3

2,4,5

GND

Sames as Pin 2

For package dimensions, refer to outline drawing at

www#stanfordmicro#com

Part Number Ordering Information

Caution: ESD sensitive

Appropriate precautions in handling, packaging

and testing devices must be observed"

Part Number

SGA-3263

Reel Size

Devices/Reel

3000

726 Palomar Aveꢀ, Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://wwwꢀstanfordmicroꢀcom

EDS-100632 Rev B

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