STN3446 [STANSON]
N Channel Enhancement Mode MOSFET;
| 型号： | STN3446 |
| 厂家： | 
STANSON TECHNOLOGY |
| 描述： | N Channel Enhancement Mode MOSFET |
| 文件： | 总6页 (文件大小：329K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STN3446
N Channel Enhancement Mode MOSFET
5.3A
DESCRIPTION
The STN3446 is the N-Channel enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density process
is especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application, such as cellular phone and notebook computer
power management and other battery powered circuits, and low in-line power loss are
needed in a very small outline surface mount package.
FEATURE
PIN CONFIGURATION
TSOP-6P
◆
◆
◆
◆
20V/5.3A, RDS(ON)=48mΩ@VGS=4.5V
20V/3.4A, RDS(ON)=65mΩ@VGS=2.5V
20V/2.8A, RDS(ON)=90mΩ@VGS=1.8V
Super high density cell design for extremely low
RDS(ON)
◆
◆
Exceptional an-resistance and maximum DC
current capability
TSOP-6P package design
Y: Year Code
W: Week Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN3446 2010. V1
STN3446
N Channel Enhancement Mode MOSFET
5.3A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted )
Parameter
Drain-Source Voltage
Symbol
VDSS
Typical
20
Unit
V
Gate-Source Voltage
VGSS
±12
V
TA=25℃
TA=70℃
5.3
4.2
Continuous Drain Current (TJ=150℃)
ID
A
Pulsed Drain Current
IDM
IS
25
A
A
Continuous Source Current (Diode Conduction)
1.7
Power Dissipation
TA=25℃
TA=70℃
2.0
1.3
W
PD
Operation Junction Temperature
Storage Temperature Range
TJ
150
℃
℃
TSTG
RθJA
-55/150
90
Thermal Resistance-Junction to Ambient
℃/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN3446 2010. V1
STN3446
N Channel Enhancement Mode MOSFET
5.3A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Static
Symbol
Condition
Min
Typ
Max Unit
Drain-Source Breakdown
Voltage
V(BR)DSS
20
V
VGS=0V,ID=-250uA
Gate Threshold Voltage
VGS(th)
IGSS
0.4
1.0
V
VDS=VGS,ID=-250uA
VDS=0V,VGS=±20V
VDS=20V,VGS=0V
Gate Leakage Current
±100 nA
1
Zero Gate Voltage Drain
Current
IDSS
uA
VDS=20V,VGS=0V
5
TJ=55℃
On-State Drain Current
ID(on)
V
DS≦5V,VGS=4.5V
6
A
0.030 0.040
0.040 0.050
0.075 0.090
12
VGS=4.5V,ID=5.3A
VGS=2.5V,ID=3.4A
VGS=1.8V,ID=2.8A
Drain-source On-Resistance RDS(on)
Ω
Forward Transconductance
gfs
VSD
S
V
VDS=5V,ID=3.6A
IS=1.6A,VGS=0V
Diode Forward Voltage
Dynamic
0.8
1.2
Total Gate Charge
Qg
4.8
1.0
8
VDS=6V,VGS=4.5V,
ID=2.8A
Gate-Source Charge
Qgs
nC
Gate-Drain Charge
Input Capacitance
Qgd
1.0
Ciss
485
Output Capacitance
Coss
Crss
85
40
VDS=6V,VGS=0,
f=1MHz
pF
Reverse Transfer
Capacitance
Turn-On Time
Td(on)
tr
Td(off)
tf
8
14
VDD=6V,RL=6Ω,
ID=1.0A,VGEN=10V
R =6Ω
G
ns
10
30
12
18
35
16
Turn-Off Time
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN3446 2010. V1
STN3446
N Channel Enhancement Mode MOSFET
5.3A
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN3446 2010. V1
STN3446
N Channel Enhancement Mode MOSFET
5.3A
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN3446 2010. V1
STN3446
N Channel Enhancement Mode MOSFET
5.3A
TSOP-6 PACKAGE OUTLINE
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STN3446 2010. V1
相关型号：
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STMICROELECTR
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