74VHC541 [STMICROELECTRONICS]
OCTAL BUS BUFFER WITH 3 STATE OUTPUTS NON INVERTED; 具有三态输出非反相八路总线缓冲器
| 型号： | 74VHC541 |
| 厂家： | 
ST |
| 描述： | OCTAL BUS BUFFER WITH 3 STATE OUTPUTS NON INVERTED |
| 文件： | 总8页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
74VHC541
OCTAL BUS BUFFER
WITH 3 STATE OUTPUTS (NON INVERTED)
■
■
HIGH SPEED:tPD =3.6ns (TYP.) atVCC = 5V
LOW POWER DISSIPATION:
CC =4 µA (MAX.) at TA =25 oC
HIGH NOISEIMMUNITY:
NIH = VNIL =28% VCC (MIN.)
I
■
V
M
T
■
■
POWERDOWN PROTECTIONON INPUTS
SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 8 mA (MIN)
BALANCEDPROPAGATIONDELAYS:
tPLH tPHL
OPERATING VOLTAGERANGE:
VCC (OPR)= 2V to 5.5V
PIN AND FUNCTION COMPATIBLEWITH
74 SERIES541
(Micro Package)
(TSSOPPackage)
ORDER CODES :
■
■
■
74VHC541M
74VHC541T
all eight outputs are in the high impedance state.
In order to enhance PC board layout, the AC541
offers a pinout having inputs and outputs on
opposite sidesof the package.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface5V to 3V.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
■
■
IMPROVED LATCH-UP IMMUNITY
LOWNOISE:VOLP = 0.9V(Max.)
DESCRIPTION
The VHC541 is an advanced high speed CMOS
OCTAL BUS BUFFER (3-STATE) fabricated with
sub-micron silicon gate and double-layer metal
wiring C2MOS technology.
The 3 STATE control gate operates as a two
input AND such that if either G1 and G2 are high,
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/8
June 1999
74VHC541
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
SYMBOL NAME AND FUNCTION
1,19
G1, G2
Output Enable Input
Data Inputs
2,3,4,5,
6,7,8,9
A1toA8
18, 17, 16,
15, 14, 13,
12, 11
Y1toY8
Data Outputs
10
20
GND
VCC
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
INPUT
OUTPUT
G1
H
X
G2
X
An
Yn
Z
X
X
H
L
H
L
Z
L
H
L
L
L
X:”H” or”L”
Z:Highimpedance
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
-0.5to+7.0
Unit
VCC
VI
Supply Voltage
V
V
DC Input Voltage
DC Output Voltage
DC Input Diode Current
-0.5to+7.0
-0.5toVCC +0.5
-20
VO
IIK
V
mA
mA
mA
mA
oC
oC
IOK
IO
DC Output Diode Current
DC Output Current
20
±
± 25
± 75
ICC orIGND DC VCC or Ground Current
Tstg
TL
Storage Temperature
-65to+150
300
Lead Temperature (10 sec)
AbsoluteMaximum Ratingsarethose values beyond whichdamage tothe device may occur. Functional operation under these condition isnot implied.
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
VI
Parameter
Value
2.0to5.5
0to5.5
Unit
V
Supply Voltage
Input Voltage
V
VO
Output Voltage
0toVCC
-40to+85
V
oC
Top
Operating Temperature
dt/dv
0to100
0to20
ns/V
ns/V
Input Rise and Fall Time (see note 1) (VCC = 3.3 0.3V)
±
(V CC = 5.0 ± 0.5V)
1)VIN from30% to70%of VCC
2/8
74VHC541
DC SPECIFICATIONS
Symbol
Parameter
Test Conditions
VCC
(V)
Value
TA = 25 oC
Min. Typ. Max. Min. Max.
Unit
-40 to 85 oC
VIH
VIL
High Level Input
Voltage
2.0
3.0 to 5.5
2.0
1.5
1.5
V
V
0.7VCC
0.7VCC
Low Level Input
Voltage
0.5
0.5
3.0 to 5.5
2.0
0.3VCC
0.3VCC
VOH
High Level Output
Voltage
I =-50 A
1.9
2.9
2.0
3.0
4.5
1.9
2.9
µ
O
3.0
I =-50 A
µ
O
V
V
4.5
I =-50 A
4.4
4.4
µ
O
3.0
IO=-4mA
IO=-8mA
2.58
3.94
2.48
3.8
4.5
VOL
Low Level Output
Voltage
2.0
I =50 A
0.0
0.0
0.0
0.1
0.1
0.1
0.1
µ
O
3.0
I =50 A
µ
O
4.5
I =50 A
0.1
0.1
µ
O
3.0
IO=4mA
IO=8mA
0.36
0.36
0.44
0.44
4.5
IOZ
High Impedance
Output Leakage
Current
V = VIH orVIL
VO =VCC orGND
0.25
±
2.5
±
A
µ
I
5.5
II
Input Leakage Current
0to5.5
5.5
VI =5.5Vor GND
0.1
1.0
A
µ
±
±
ICC
Quiescent Supply
Current
V =VCC orGND
I
4
40
A
µ
AC ELECTRICAL CHARACTERISTICS (Input tr = tf =3 ns)
Symbol
Parameter
Test Condition
Value
TA = 25 oC
Unit
VCC
CL
-40 to 85 oC
(V)
(pF)
Min. Typ. Max. Min. Max.
(*)
tPLH
tPHL
Propagation Delay
Time
3.3
15
50
5.0
7.5
3.5
5.0
6.8
9.3
4.7
6.2
11.2
6.0
7.0
10.5
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
8.5
12.0
6.0
(*)
3.3
ns
ns
(**)
5.0
15
50
15
50
15
50
50
50
50
50
(**)
5.0
7.0
8.0
(*)
tPZL
tPZH
Output Enable Time
Output Disable Time
3.3
RL =1KΩ
10.5
14.0
7.2
12.5
16.0
8.5
(*)
3.3
R =1K
Ω
L
(**)
5.0
RL= 1KΩ
(**)
5.0
R = 1K
9.2
10.5
17.5
10.0
1.5
Ω
L
(*)
tPLZ
tPHZ
3.3
RL =1KΩ
15.4
8.8
ns
ns
(**)
5.0
R =1K
Ω
L
(*)
tOSLH Output to Output Skew
tOSHL
3.3
1.5
(**)
Time (note 1)
5.0
1.0
1.0
(*) Voltagerangeis3.3V ± 0.3V
(**) Voltagerange is 5V 0.5V
±
Note1:Parameter guaranteed bydesign. tsoLH =|tpLHm-tpLHn|,tsoHL =|tpHLm -tpHLn
|
3/8
74VHC541
CAPACITIVE CHARACTERISTICS
Symbol
Parameter
Test Conditions
Value
TA = 25 oC
Min. Typ. Max. Min. Max.
Unit
-40 to 85 oC
CIN
Input Capacitance
4
6
10
10
pF
pF
pF
COUT Output Capacitance
CPD
Power Dissipation
18
Capacitance (note 1)
1)CPD isdefined as thevalue ofthe IC’sinternal equivalent capacitance whichiscalculated fromthe operating current consumption without load. (Referto
TestCircuit).Average operating current can beobtained bythe followingequation. ICC(opr)= CPD • VCC • fIN + ICC/8(per Circuit)
DYNAMIC SWITCHING CHARACTERISTICS
Symbol
Parameter
Test Conditions
VCC
(V)
Value
TA = 25 oC
Min. Typ. Max. Min. Max.
Unit
-40 to 85 oC
VOLP
VOLV
Dynamic Low Voltage
Quiet Output (note 1, 2)
5.0
0.6
0.9
-0.9
3.5
-0.6
V
IHD
Dynamic High Voltage
Input (note 1, 3)
5.0
5.0
CL = 50pF
V
VILD
Dynamic Low Voltage
Input (note 1, 3)
1.5
1)Worstcase package.
2)Max number ofoutputs defined as (n). Datainputs aredriven 0Vto5.0V, (n -1)outputs switching andone outputatGND.
3)Max number ofdatainputs (n)switching.(n-1)switching 0Vto5.0V. Inputsunder testswitching: 5.0Vtothreshold (VILD),0V tothreshold (VIHD),f=1MHz.
TEST CIRCUIT
TEST
SWITCH
Open
tPLH, tPHL
tPZL, tPLZ
tPZH, tPHZ
VCC
GND
CL = 15/50 pF or equivalent (includes jig and probe capacitance)
RL =R1 =1KΩ orequivalent
RT = ZOUT ofpulse generator (typically50Ω)
4/8
74VHC541
WAVEFORM 1: PROPAGATION DELAYS
(f=1MHz; 50% duty cycle)
WAVEFORM 2: OUTPUT ENABLE AND DISABLE TIME (f=1MHz; 50% duty cycle)
5/8
74VHC541
Plastic DIP-20 (0.25) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
0.254
1.39
TYP.
MAX.
MIN.
0.010
0.055
MAX.
a1
B
b
1.65
0.065
0.45
0.25
0.018
0.010
b1
D
E
e
25.4
1.000
8.5
0.335
0.100
0.900
2.54
22.86
e3
F
7.1
0.280
0.155
I
3.93
L
3.3
0.130
Z
1.34
0.053
P001J
6/8
74VHC541
SO-20 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
2.65
0.20
2.45
0.49
0.32
MIN.
MAX.
0.104
0.007
0.096
0.019
0.012
A
a1
a2
b
0.10
0.004
0.35
0.23
0.013
0.009
b1
C
0.50
0.020
c1
D
45 (typ.)
12.60
10.00
13.00
10.65
0.496
0.393
0.512
0.419
E
e
1.27
0.050
0.450
e3
F
11.43
7.40
0.50
7.60
1.27
0.75
0.291
0.19
0.299
0.050
0.029
L
M
S
8 (max.)
P013L
7/8
74VHC541
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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