A2C36S12M3 [STMICROELECTRONICS]
;
| 型号： | A2C36S12M3 |
| 厂家： | 
ST |
| 描述： | |
| 文件： | 总19页 (文件大小：1286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A2C35S12M3
ACEPACK™ 2 converter inverter brake, 1200 V, 35 A
trench gate field-stop IGBT M series, soft diode and NTC
Datasheet - preliminary data
Features
ACEPACK™ 2 power module
DBC Cu Al2O3 Cu
Converter inverter brake topology
1600 V, very low drop rectifiers for
converter
1200 V, 35 A IGBTs and diodes
VCE(sat): 1.95 V @ IC = 35 A
Soft and fast recovery diode
Integrated NTC
Applications
Inverters
Motor drives
Figure 1: Internal electrical schematic
Description
This power module is a converter-inverter brake
(CIB) topology in an ACEPACK™ 2 package with
NTC, integrating the advanced trench gate field-
stop technology from STMicroelectronics. This
new IGBT technology represents the best
compromise between conduction and switching
loss, to maximize the efficiency of any converter
system up to 20 kHz.
Table 1: Device summary
Package
ACEPACK™ 2
Order code
Marking
Leads type
A2C35S12M3
A2C35S12M3
Solder contact pins
September 2017
DocID028945 Rev 3
1/19
www.st.com
This is preliminary information on a new product now in development
or undergoing evaluation. Details are subject to change without notice.
Contents
A2C35S12M3
Contents
1
Electrical ratings .............................................................................3
1.1
Inverter stage ....................................................................................3
1.1.1
1.1.2
IGBTs.................................................................................................. 3
Diode .................................................................................................. 5
1.2
Brake stage.......................................................................................6
1.2.1
1.2.2
IGBT ................................................................................................... 6
Diode .................................................................................................. 8
1.3
1.4
1.5
Converter stage.................................................................................9
NTC...................................................................................................9
Package..........................................................................................10
2
3
4
5
Electrical characteristics curves..................................................11
Test circuits ...................................................................................14
Topology and pin description ......................................................15
Package information .....................................................................16
5.1
ACEPACK™ 2 CIB solder pins package information......................17
6
Revision history ............................................................................18
2/19
DocID028945 Rev 3
A2C35S12M3
Electrical ratings
1
Electrical ratings
1.1
Inverter stage
Limiting values at Tj= 25 °C, unless otherwise specified.
1.1.1
IGBTs
Table 2: Absolute maximum ratings of the IGBTs, inverter stage
Symbol
VCES
IC
Description
Collector-emitter voltage (VGE = 0)
Value
1200
35
Unit
V
Continuous collector current at Tc = 100 °C
Pulsed collector current (tP = 1 ms)
Gate-emitter voltage
A
(1)
ICP
70
A
VGE
PTOT
TJMAX
TJop
± 20
V
Total power dissipation IGBT (TJMAX = 175 °C)
Maximum junction temperature
250
W
°C
°C
175
Operative temperature range under switching conditions
-40 to 150
Notes:
(1)Pulse width limited by maximum junction temperature.
DocID028945 Rev 3
3/19
Electrical ratings
Symbol
V(BR)CES
A2C35S12M3
Table 3: Electrical characteristics of the IGBTs, inverter stage
Parameter
Test conditions
IC = 1 mA, VGE = 0 V
VGE = 15 V, IC= 35 A
Min.
Typ. Max. Unit
Collector-emitter
breakdown voltage
1200
V
1.95
2.3
6
2.45
V
V
Collector-emitter
saturation voltage
VCE(sat)
VGE = 15 V, IC = 35 A,
TJ = 150 ˚C
Gate threshold voltage
Collector cut-off current
VGE(th)
ICES
VCE = VGE, IC = 1 mA
5
7
V
VGE = 0 V, VCE = 1200 V
100
μA
Gate-emitter leakage
current
IGES
VCE = 0 V, VGE = ±20 V
±500
nA
Input capacitance
Output capacitance
Cies
2154
164
pF
pF
VCE = 25 V, f = 1 MHz,
VGE = 0 V
Coes
Reverse transfer
capacitance
Cres
Qg
86
pF
nC
VCC = 960 V, IC = 35 A,
VGE = ±15 V
Total gate charge
163
Turn-on delay time
Current rise time
td(on)
tr
127
ns
ns
VCC = 600 V, IC = 35 A,
RG = 10 Ω, VGE = ±15 V,
di/dt = 1460 A/µs
18.5
Turn-on switching
energy
(1)
Eon
1.065
mJ
Turn-off delay time
Current fall time
td(off)
tf
135
133
ns
ns
VCC = 600 V, IC = 35 A,
R G = 10 Ω, VGE = ±15 V,
dv/dt = 9000 V/µs;
Turn-off switching
energy
(2)
Eoff
1.83
mJ
Turn-on delay time
Current rise time
td(on)
tr
125
20
ns
ns
VCC = 600 V, IC = 35 A,
RG = 10 Ω, VGE = ±15 V,
di/dt = 1424 A/µs,
TJ = 150 °C
Turn-on switching
energy
Eon
1.79
mJ
Turn-off delay time
Current fall time
td(off)
tf
140
224
ns
ns
VCC = 600 V, IC = 35 A,
RG = 10 Ω, VGE = ±15 V,
dv/dt = 7500 V/µs,
TJ = 150 °C
Turn-off switching
energy
Eoff
tSC
RTHj-c
RTHc-h
2.85
mJ
µs
VCC ≤ 600V, VGE ≤ 15 V,
Tjstart ≤ 150 °C
Short-circuit withstand
time
10
Thermal resistance
junction to case
each IGBT
0.55
0.70
0.60 °C/W
°C/W
each IGBT,
Thermal resistance
case to heatsink
λgrease = 1 W/(m·°C)
Notes:
(1) Including the reverse recovery of the diode.
(2)Including also the tail of the collector current.
4/19
DocID028945 Rev 3
A2C35S12M3
Electrical ratings
1.1.2
Diode
Limiting values at Tj= 25 °C, unless otherwise specified.
Table 4: Absolute maximum ratings of the diode, inverter stage
Parameter Value
Symbol
VRRM
IF
Unit
V
Repetitive peak reverse voltage
1200
35
Continuous forward current at (TC = 100 °C)
Pulsed forward current
A
(1)
IFP
70
A
TJMAX
TJop
Maximum junction temperature
175
°C
°C
Operative temperature range under switching conditions
-40 to 150
Notes:
(1)Pulse width limited by maximum junction temperature.
Table 5: Electrical characteristics of the diode, inverter stage
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
IF = 35 A
-
-
2.95
2.3
4.1
VF
Forward voltage
V
IF = 35 A, TJ = 150 ˚C
Reverse recovery
time
trr
Qrr
-
-
-
-
-
-
-
-
-
200
2.7
43
ns
µC
A
Reverse recovery
charge
IF = 35 A, VR = 600 V, VGE = ±15 V,
diF/dt = 1460 A/μs
Reverse recovery
current
Irrm
Reverse recovery
energy
Erec
trr
1.1
380
6.8
60
mJ
ns
µC
A
Reverse recovery
time
Reverse recovery
charge
Qrr
IF = 35 A, VR = 600 V, VGE = ±15 V,
diF/dt = 1424 A/μs, TJ = 150 °C
Reverse recovery
current
Irrm
Reverse recovery
energy
Erec
RTHj-c
3.2
mJ
Thermal resistance
junction to case
Each diode
0.80 0.90 °C/W
0.75 °C/W
Each diode,
Thermal resistance
case to heatsink
RTHc-h
-
λgrease = 1 W/(m·°C)
DocID028945 Rev 3
5/19
Electrical ratings
A2C35S12M3
1.2
Brake stage
Limiting values at Tj= 25 °C, unless otherwise specified.
1.2.1
IGBT
Table 6: Absolute maximum ratings of the IGBT, brake stage
Parameter Value
Symbol
VCES
IC
Unit
V
Collector-emitter voltage (VGE = 0)
Continuous collector current (Tc = 100 °C)
Pulsed collector current
1200
35
A
(1)
ICP
70
A
VGE
PTOT
TJMAX
TJop
Gate-emitter voltage
±20
250
175
V
Total power dissipation
W
°C
Maximum junction temperature
Operative temperature range under switching conditions
-40 to 150
°C
Notes:
(1)Pulse width limited by maximum junction temperature.
6/19
DocID028945 Rev 3
A2C35S12M3
Symbol
V(BR)CES
Electrical ratings
Table 7: Electrical characteristics of the IGBT, brake stage
Parameter
Test conditions
IC = 1 mA, VGE = 0 V
VGE = 15 V, IC = 35 A
Min.
Typ.
Max.
Unit
Collector-emitter
breakdown voltage
1200
V
1.95
2.3
Collector-emitter
saturation voltage
VCE(sat)
V
VGE = 15 V, IC = 35 A,
TJ = 150 ˚C
Gate threshold
voltage
VGE(th)
ICES
VCE = VGE, IC = 1mA
5
6
7
V
Collector cut-off
current
VGE = 0 V, VCE = 1200 V
VCE = 0 V, VGE = ±20 V
100
µA
nA
Gate-emitter leakage
current
IGES
± 500
Cies
Input capacitance
Output capacitance
2154
164
pF
pF
VCE = 25 V, f = 1 MHz,
VGE = 0 V
Coes
Reverse transfer
capacitance
Cres
Qg
86
pF
nC
VCC = 960 V, IC = 35 A,
VGE = ±15 V
Total gate charge
163
td(on)
tr
Turn-on delay time
Current rise time
127
ns
ns
VCC = 600 V, IC = 35 A,
RG = 10 Ω, VGE = ±15 V,
di/dt = 1460 A/µs
18.5
Turn-on switching
energy
(1)
Eon
1.065
mJ
td(off)
tf
Turn-off delay time
Current fall time
135
133
ns
ns
VCC = 600 V, IC = 35 A,
RG = 10 Ω, VGE = ±15 V,
dv/dt = 9000 V/µs;
Turn-off switching
energy
(2)
Eoff
1.83
mJ
td(on)
tr
Turn-on delay time
Current rise time
125
20
ns
ns
VCC = 600 V, IC = 35 A,
RG = 10 Ω, VGE = ±15 V,
di/dt = 1424 A/µs,
TJ = 150 °C
Turn-on switching
energy
Eon
1.79
mJ
td(off)
tf
Turn-off delay time
Current fall time
140
224
ns
ns
VCC = 600 V, IC = 35 A,
RG = 10 Ω, VGE = ±15 V,
dv/dt = 7500 V/µs,
TJ = 150 °C
Turn-off switching
energy
Eoff
tSC
RTHj-c
RTHc-h
2.85
mJ
µs
VCC ≤ 600 V, VGE ≤ 15 V,
TJstart ≤ 150 °C
Short-circuit
withstand time
10
Thermal resistance
junction to case
Each IGBT
0.55
0.70
0.60
°C/W
°C/W
Each IGBT,
Thermal resistance
case to heatsink
λgrease = 1 W/(m·°C)
Notes:
(1)Including the reverse recovery of the diode.
(2)Including the tail of the collector current.
DocID028945 Rev 3
7/19
Electrical ratings
A2C35S12M3
1.2.2
Diode
Table 8: Absolute maximum ratings of the diode, brake stage
Parameter
Symbol
VRRM
IF
Value
1200
Unit
V
Repetitive peak reverse voltage
Continuous forward current at (TC = 100 °C)
Pulsed forward current
35
70
A
(1)
IFP
A
TJMAX
TJop
Maximum junction temperature
175
°C
°C
Operative temperature range under switching conditions
-40 to 150
Notes:
(1)Pulse width limited by maximum junction temperature.
Table 9: Electrical characteristics of the diode, brake stage
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
IF = 35 A
-
-
2.95
2.3
VF
Forward voltage
V
IF = 35 A, TJ = 150 ˚C
Reverse recovery
time
trr
Qrr
-
-
-
-
-
-
-
-
-
200
2.7
43
ns
µC
A
Reverse recovery
charge
IF = 35 A, VR = 600 V, VGE = ±15 V,
di/dt = 1460 A/μs
Reverse recovery
current
Irrm
Reverse recovery
energy
Erec
trr
1.1
380
6.8
60
mJ
ns
µC
A
Reverse recovery
time
Reverse recovery
charge
Qrr
IF = 35 A, VR = 600 V, VGE = ±15 V,
di/dt = 1424 A/μs, TJ = 150 °C
Reverse recovery
current
Irrm
Reverse recovery
energy
Erec
RTHj-c
3.2
mJ
Thermal resistance
junction to case
Each diode
0.80 0.90 °C/W
0.95 °C/W
Each diode,
Thermal resistance
case to heatsink
RTHc-h
-
λgrease = 1 W/(m·°C)
8/19
DocID028945 Rev 3
A2C35S12M3
Electrical ratings
1.3
Converter stage
Limiting values at Tj= 25 °C, unless otherwise specified.
Table 10: Absolute maximum ratings of the bridge rectifiers
Description Value
Symbol
VRRM
IF
Unit
V
Repetitive peak reverse voltage
RMS forward current
1600
70
A
Forward surge current tp = 10 ms, TC = 25 °C
Forward surge current tp = 10 ms, TC = 150 °C
tp = 10 ms, TC = 25 °C
450
IFSM
A
365
1012
666
I2t
A2s
tp = 10 ms, TC = 150 °C
TJMAX
TJop
Maximum junction temperature
175
°C
°C
Operative temperature range under switching conditions
-40 to 150
Table 11: Electrical characteristics of the bridge rectifiers
Parameter Test conditions Min. Typ. Max.
IF = 35 A
Symbol
Unit
-
-
-
1.0
0.9
1
1.4
VF
Forward voltage
V
IF = 35 A, TJ = 150 ˚C
IR
Reverse current
TJ = 150 ˚C, VR = 1600 V
mA
Thermal resistance junction
to case
RTHj-c
Each diode
-
-
1.00
0.95
1.10 °C/W
°C/W
Each diode,
Thermal resistance case to
heatsink
RTHc-h
λgrease = 1 W/(m·°C)
1.4
NTC
Table 12: NTC temperature sensor, considered as stand-alone
Parameter Test condition Min. Typ. Max. Unit
Resistance T = 25 °C
T = 100 °C
Symbol
R25
5
kΩ
Ω
R100
Resistance
493
ΔR/R
B25/50
B25/80
Deviation of R100
B-constant
-5
+5
%
K
3375
3411
B-constant
K
Operating temperature
range
T
-40
150
°C
DocID028945 Rev 3
9/19
Electrical ratings
Figure 2: NTC resistance vs temperature
A2C35S12M3
Figure 3: NTC resistance vs temperature, zoom
1.5
Package
Table 13: ACEPACK™ 2 package
Symbol
Visol
Md
Parameter
Isolation voltage (AC voltage, t = 60 s)
Screw mounting torque
Min.
Typ.
Max.
2500
80
Unit
V
40
-40
200
Nm
°C
Tstg
Storage temperature
125
CTI
Ls
Comparative tracking index
Stray inductance module P1 - EW loop
Module lead resistance, terminal to chip
33.5
3.6
nH
Rs
mΩ
10/19
DocID028945 Rev 3
A2C35S12M3
Electrical characteristics curves
2
Electrical characteristics curves
Figure 4: IGBT output characteristics (VGE = 15 V)
Figure 5: IGBT output characteristics (TJ = 150 °C)
Figure 6: IGBT output characteristics (VCE = 15 V)
Figure 7: Switching energy vs gate resistance
Figure 9: IGBT reverse biased safe operating area
(RBSOA
Figure 8: Switching energy vs collector current
)
DocID028945 Rev 3
11/19
Electrical characteristics curves
A2C35S12M3
Figure 11: Diode reverse recovery energy vs diode
current slope
Figure 10: Diode forward characteristics
Figure 12: Diode reverse recovery energy vs
forward current
Figure 13: Diode reverse recovery energy vs gate
resistance
Figure 14: Converter diode forward characteristics
Figure 15: IGBT thermal impedance
12/19
DocID028945 Rev 3
A2C35S12M3
Electrical characteristics curves
Figure 16: Inverter diode thermal impedance
DocID028945 Rev 3
13/19
Test circuits
A2C35S12M3
3
Test circuits
Figure 17: Test circuit for inductive load
switching
Figure 18: Gate charge test circuit
A
B
A
C
E
L=100 µH
G
B
VCC
3.3
µF
1000
µF
C
G
D.U.T
RG
E
+
-
AM01504v1
Figure 20: Diode reverse recovery waveform
Figure 19: Switching waveform
14/19
DocID028945 Rev 3
A2C35S12M3
Topology and pin description
4
Topology and pin description
Figure 21: Electrical topology and pin description
P
P1
G3
G5
G1
B
T1
U
L1
L2
L3
V
W
GB
G4
G6
G2
T2
EW
EU
EV
NB
N
Figure 22: Package top view with CIB pinout
W
W
G3
V
V
G1
U
U
L3 L3
G5
L2
L2
P1 P1
T2
T1
L1
L1
P
P
N
B
EW EW G6 EV EV G4 EU EU G2 NB GB
N
DocID028945 Rev 3
15/19
Package information
A2C35S12M3
5
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
16/19
DocID028945 Rev 3
A2C35S12M3
Package information
5.1
ACEPACK™ 2 CIB solder pins package information
Figure 23: ACEPACK™ 2 CIB solder pins package outline (dimensions are in mm)
32.00
28.80
25.60
22.40
19.20
16.00
12.80
9.60
W
G
3
V
V
G1
U
L3
L3
W
U
G5
L2
L2
P1
P1
T2
L1
L1
P
P
T1
B
EW
EW
G6
E
V
EV
G4
E
U
EU
G2
NB
GB
N
N
0.00
3.2 BSC
□0.64±0.03
Detail A
3.5 REF x45°
56.7±0.3
51±0.15
22.7±0.3
16.4±0.2
1.3±0.2
8.5
2.5±0.2
4.5±0.1
52.7 REF
8569722_ACEPACK2_CIB_solderable_pins
The lead size includes the thickness of the lead plating material.
Dimensions do not include mold protrusion.
Package dimensions do not include any eventual metal burrs.
DocID028945 Rev 3
17/19
Revision history
A2C35S12M3
6
Revision history
Table 14: Document revision history
Changes
Date
Revision
01-Feb-2016
1
Initial release.
Document status promoted from preliminary to production data.
Added Section 2: "Electrical characteristics (curves)" and Section 3:
"Test circuits".
12-Jan-2017
20-Sep-2017
2
3
Updated Section 5.1: "ACEPACK™ 2 CIB solderable pins package
information".
Minor text changes.
Updated title, features and description in cover page.
Updated Table 1: "Device summary", Section 1: "Electrical ratings",
Section 2: "Electrical characteristics curves", Section 4: "Topology and
pin description" and Section 5: "Package information".
Minor text changes.
18/19
DocID028945 Rev 3
A2C35S12M3
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2017 STMicroelectronics – All rights reserved
DocID028945 Rev 3
19/19
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