AM83135-040 [STMICROELECTRONICS]
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS; 射频与微波晶体管S波段雷达应用
| 型号： | AM83135-040 |
| 厂家： | 
ST |
| 描述： | RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS |
| 文件： | 总3页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM83135-040
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
PRELIMINARY DATA
.
.
.
.
.
.
.
REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT
40 W MIN. WITH 5.1 dB GAIN
=
.310 x .310 2LFL (S064)
hermetically sealed
ORDER CODE
AM83135-040
BRANDING
AM83135-40
DESCRIPTION
The AM83135-040 device is a high power silicon
bipolar NPN transistor specifically designed for S-
Band radar pulsed output and driver applications.
PIN CONNECTION
This device is characterized at 10µsec pulse width
and 10% duty cycle, but is capable of operation
over a range of pulse widths, duty cycles, and
temperatures, and can withstand a 3:1 output
VSWR with a + 1 dB input overdrive. Low RF
thermal resistance, refractory/gold metallization,
and computerized automatic wire bonding tech-
niques ensure high reliability and product consist-
ency (including phase characteristics).
The AM83135-040 is supplied in the IMPAC™Her-
metic Metal/Ceramic package with internal
Input/Output impedance matching circuitry, and is
intended for military and other high reliability ap-
plications.
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T
= 25°C)
case
Symbol
PDISS
IC
Parameter
Value
167
Unit
W
A
Power Dissipation*
Device Current*
(TC ≤ 50˚C)
8.0
VCC
TJ
Collector-Supply Voltage*
46
V
°
°
Junction Temperature (Pulsed RF Operation)
Storage Temperature
250
C
C
TSTG
65 to +200
−
THERMAL DATA
°
C/W
RTH(j-c)
Junction-Case Thermal Resistance*
1.2
*Applies only to rated RF amplifier operation
1/3
September 1992
AM83135-040
°
= 25 C)
ELECTRICAL SPECIFICATIONS (T
case
STATIC
Value
Symbol
Test Conditions
Unit
Min. Typ.
Max.
BVCBO
BVEBO
BVCER
ICES
IC = 25mA
IE = 5mA
IC = 25mA
VBE = 0V
VCE = 5V
IE = 0mA
IC = 0mA
RBE = 10Ω
VCE = 40V
IC = 3A
55
3.5
55
—
—
—
—
—
—
—
V
V
—
—
V
20
mA
—
hFE
30
300
DYNAMIC
Symbol
POUT
Value
Test Conditions
Unit
Min.
Typ. Max.
f = 3.1 — 3.5GHz
f = 3.1 — 3.5GHz
f = 3.1 — 3.5GHz
PIN 12.5W
VCC 40V
40
—
—
—
—
—
—
W
%
=
=
η
c
PIN 12.5W
VCC 40V
30
=
=
GP
PIN 12.5W
VCC 40V
5.1
dB
=
=
Note:
Pulse Width
100µS
10%
=
=
Duty Cycle
PACKAGE MECHANICAL DATA
.318/
.306
2/3
AM83135-040
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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3/3
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