B16NK60Z [STMICROELECTRONICS]

N-CHANNEL 600V - 0.38 - 14 A TO-220 /I2SPAK/TO-247 Zener - Protecdet SuperMESH™ MOSFET; N沟道600V - 0.38 - 14 A TO - 220 / I2SPAK / TO- 247齐纳 - Protecdet超网™ MOSFET


型号：	B16NK60Z
厂家：	ST
描述：	N-CHANNEL 600V - 0.38 - 14 A TO-220 /I2SPAK/TO-247 Zener - Protecdet SuperMESH™ MOSFET N沟道600V - 0.38 - 14 A TO - 220 / I2SPAK / TO- 247齐纳 - Protecdet超网™ MOSFET
文件：	总10页 (文件大小：235K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STP16NK60Z - STB16NK60Z-S

STW16NK60Z

N-CHANNEL 600V - 0.38 Ω - 14 A TO-220 /I2SPAK/TO-247

Zener - Protecdet SuperMESH™ MOSFET

TARGET SPECIFICATION

Table 1: General Features

Figure 1: Package

TYPE

DSS

DS(on)

STP16NK60Z

STB16NK60Z-S 600 V

STW16NK60Z 600 V

600 V

< 0.42 Ω 14 A 190 W

■ TYPICAL R (on) = 0.38 Ω

I SPAK

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSIC CAPACITANCES

■ VERY GOOD MANUFACTURING

REPEATIBILITY

TO-220

DESCRIPTION

TO-247

The SuperMESH™ series is obtained through an

extreme optimization of ST’s well established

strip-based PowerMESH™ layout. In addition to

pushing on-resistance significantly down, special

care is taken to ensure a very good dv/dt capability

for the most demanding applications. Such series

complements ST full range of high voltage MOS-

FETs including revolutionary MDmesh™ products.

Figure 2: Internal Schematic Diagram

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ IDEAL FOR OFF-LINE POWER SUPPLIES

Table 2: Order Codes

SALES TYPE

MARKING

PACKAGE

PACKAGING

STP16NK60Z

P16NK60Z

TO-220

TUBE

STB16NK60Z-S

STW16NK60Z

B16NK60Z

W16NK60Z

TUBE

I SPAK

TO-247

Rev. 1

September 2005

1/10

This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.

STP16NK65Z - STB16NK65Z-S - STW16NK60Z

Table 3: Absolute Maximum ratings

Symbol

Parameter

Value

600

± 30

Unit

Drain-source Voltage (V = 0)

DGR

Drain-gate Voltage (R = 20 kΩ)

Gate- source Voltage

Drain Current (continuous) at T = 25°C

Drain Current (continuous) at T = 100°C

8.8

( )

Drain Current (pulsed)

Total Dissipation at T = 25°C

190

1.51

6000

W/°C

TOT

Derating Factor

Gate source ESD (HBM-C= 100pF, R= 1.5KΩ)

ESD(G-S)

) Pulse width limited by safe operating area

(1) I ≤ 14 A, di/dt ≤ 200 A/µs, V ≤ V

, T ≤ T

j JMAX.

(BR)DSS

Table 4: Thermal Data

TO-220/ I²SPAK

TO-247

Rthj-case

Rthj-amb

Thermal Resistance Junction-case Max

0.66

300

Thermal Resistance Junction-ambient Max

Maximum Lead Temperature For Soldering Purpose

62.5

Table 5: Avalanche Characteristics

Symbol

Parameter

Max Value

Unit

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by T max)

Single Pulse Avalanche Energy

360

(starting T = 25 °C, I = I , V = 50 V)

Table 6: GATE-SOURCE ZENER DIODE

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Gate-Source Breakdown

Voltage

Igs=± 1mA (Open Drain)

GSO

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

2/10

STP16NK60Z - STB16NK60Z-S - STW16NK60Z

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

Table 7: On/Off

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Drain-source

= 1 mA, V = 0

600

(BR)DSS

Breakdown Voltage

Zero Gate Voltage

= Max Rating

= Max Rating, T = 125 °C

µA

DSS

Drain Current (V = 0)

Gate-body Leakage

= ± 20V

±10

µA

GSS

Current (V = 0)

= V , I = 100 µA

Gate Threshold Voltage

3.75

0.38

4.5

GS(th)

Static Drain-source On

Resistance

= 10V, I = 7 A

0.42

DS(on)

Drain-source

Breakdown Voltage

= 1 mA, V = 0

600

Min.

(BR)DSS

Table 8: Dynamic

Symbol

Parameter

Test Conditions

= 15 V I = 7 A

Typ.

Max.

Unit

(1)

Forward Transconductance

, D

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

= 25V, f = 1 MHz, V = 0

2650

285

iss

oss

rss

(*) Equivalent Output

Capacitance

= 0V, V = 0V to 480V

158

oss eq.

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

= 480 V, I = 14 A

d(on)

= 4.7Ω V = 10 V

(Resistive Load see, Figure 3)

d(off)

= 480V, I = 14 A,

= 10V

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

(*) C

is defined as a constant equivalent capacitance giving the same charging time as C

when V increases from 0 to 80% V

oss DS DSS

oss eq.

Table 9: Source Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Source-drain Current

Source-drain Current (pulsed)

(2)

SDM

(1)

= 14 A, V

= 0

Forward On Voltage

1.6

= 14 A, di/dt = 100 A/µs

= 100 V, T = 25°C

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

490

5.4

µC

(see test circuit, Figure 5)

RRM

= 14 A, di/dt = 100 A/µs

= 100 V, T = 150°C

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

585

µC

(see test circuit, Figure 5)

RRM

Source-drain Current

Source-drain Current (pulsed)

(2)

SDM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3/10

STP16NK65Z - STB16NK65Z-S - STW16NK60Z

Figure 3: Unclamped Inductive Load Test Cir-

cuit

Figure 6: Unclamped Inductive Wafeform

Figure 4: Switching Times Test Circuit For Re-

sistive Load

Figure 7: Gate Charge Test Circuit

Figure 5: Test Circuit For Inductive Load

Switching and Diode Recovery Times

4/10

STP16NK60Z - STB16NK60Z-S - STW16NK60Z

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These

packages have a Lead-free second level interconnect . The category of second level interconnect is

marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The

maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an

ST trademark. ECOPACK specifications are available at: www.st.com

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STP16NK65Z - STB16NK65Z-S - STW16NK60Z

TO-247 MECHANICAL DATA

mm.

TYP

inch

TYP.

DIM.

MIN.

4.85

2.20

1.0

MAX.

5.15

MIN.

0.19

MAX.

0.20

2.60

0.086

0.039

0.079

0.118

0.015

0.781

0.608

0.102

0.055

0.094

0.134

0.03

1.40

2.0

2.40

3.0

3.40

0.40

19.85

15.45

0.80

20.15

15.75

0.793

0.620

5.45

18.50

5.50

0.214

0.728

0.216

14.20

3.70

14.80

4.30

0.560

0.14

0.582

0.17

øP

øR

3.55

4.50

3.65

5.50

0.140

0.177

0.143

0.216

6/10

STP16NK60Z - STB16NK60Z-S - STW16NK60Z

TO-220 MECHANICAL DATA

mm.

TYP

inch

TYP.

DIM.

MIN.

4.40

0.61

1.15

0.49

15.25

MAX.

4.60

0.88

1.70

0.70

15.75

10.40

2.70

5.15

1.32

6.60

2.72

MIN.

0.173

0.024

0.045

0.019

0.60

MAX.

0.181

0.034

0.066

0.027

0.620

0.409

0.106

0.202

0.052

0.256

0.107

0.551

0.154

0.393

0.094

0.194

0.048

0.244

0.094

0.511

0.137

2.40

4.95

1.23

6.20

2.40

L20

L30

øP

3.50

3.93

16.40

28.90

0.645

1.137

3.75

2.65

3.85

2.95

0.147

0.104

0.151

0.116

7/10

STP16NK65Z - STB16NK65Z-S - STW16NK60Z

I SPAK MECHANICAL DATA

mm.

TYP

inch

TYP.

DIM.

MIN.

4.40

2.49

0.70

1.14

0.45

1.23

8.95

10.00

4.88

16.7

1.27

13.82

MAX.

4.60

2.69

0.93

1.70

0.60

1.36

9.35

10.40

5.28

17.5

1.4

MIN.

0.173

0.098

0.027

0.045

0.018

0.048

0.352

0.394

0.192

0.657

0.05

MAX.

0.181

0.106

0.037

0.067

0.024

0.053

0.368

0.409

0.208

0.689

0.055

0.568

14.42

0.544

8/10

STP16NK60Z - STB16NK60Z-S - STW16NK60Z

Table 10: Revision History

Date

Revision

Description of Changes

06-Jul-2004

First Release.

Inserted Ecopak indication

06-Sep-2005

9/10

STP16NK65Z - STB16NK65Z-S - STW16NK60Z

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted

by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject

to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not

authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics

All other names are the property of their respective owners

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10/10

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