BSR33 [STMICROELECTRONICS]
1A, 80V, PNP, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3;型号: | BSR33 |
厂家: | ST |
描述: | 1A, 80V, PNP, Si, POWER TRANSISTOR, PLASTIC PACKAGE-3 开关 晶体管 |
文件: | 总4页 (文件大小:39K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BSR31
BSR33
®
SMALL SIGNAL PNP TRANSISTORS
PRELIMINARY DATA
Ordering Code
BSR31
Marking
R31
R33
BSR33
■
■
SILICON EPITAXIAL PLANAR PNP MEDIUM
VOLTAGE TRANSISTORS
SOT-89 PLASTIC PACKAGE FOR SURFACE
MOUNTING CIRCUITS
■
■
TAPE AND REEL PACKING
THE NPN COMPLEMENTARY TYPES ARE
BSR41 AND BSR43 RESPECTIVELY
SOT-89
APPLICATIONS
■
■
■
MEDIUM VOLTAGE LOAD SWITCH
TRANSISTORS
OUTPUT STAGE FOR AUDIO AMPLIFIERS
CIRCUITS
AUTOMOTIVE POST-VOLTAGE
REGULATION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
BSR31
-70
BSR33
-90
VCBO
VCEO
VEBO
IC
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
V
V
-60
-80
-5
-1
V
A
ICM
IB
Collector Peak Current (tp < 5 ms)
Base Current
-2
A
-0.1
A
IBM
Ptot
Tstg
Tj
Base Peak Current (tp < 5 ms)
-0.2
A
o
Total Dissipation at Tamb = 25 C
1.35
-65 to 150
150
W
oC
oC
Storage Temperature
Max. Operating Junction Temperature
1/4
March 2003
BSR31 BSR33
THERMAL DATA
Rthj-amb
•
Thermal Resistance Junction-Ambient
Max
92.6
oC/W
• Device mounted on a PCB area of 1 cm2
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCB = -60 V
VCB = -60 V
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
-100
-50
nA
µA
o
Tj = 150 C
IEBO
Emitter Cut-off Current VEB = -5 V
(IC = 0)
-100
nA
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
IC = -100 µA
for BSR31
for BSR33
-70
-90
V
V
V(BR)CEO Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = -20 mA
for BSR31
for BSR33
-60
-80
V
V
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
-5
V
IE = -10 µA
VCE(sat)
VBE(sat)
hFE
Collector-Emitter
Saturation Voltage
IC = -150 mA IB = -15 mA
IC = -500 mA IB = -50 mA
-0.25
-0.5
V
V
Base-Emitter
Saturation Voltage
IC = -150 mA IB = -15 mA
IC = -500 mA IB = -50 mA
-1
-1.2
V
V
DC Current Gain
30
100
50
IC = -100 µA
VCE = -5 V
300
IC = -100 mA VCE = -5 V
IC = -500 mA VCE = -5 V
fT
Transition Frequency
IC = -50 mA
f = 100 MHz
VCE = -10 V
100
MHz
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
2/4
BSR31 BSR33
SOT-89 MECHANICAL DATA
mm
mils
DIM.
MIN.
1.4
TYP.
MAX.
1.6
MIN.
55.1
17.3
14.2
13.8
13.8
173.2
63.8
90.2
55.9
115.0
155.1
35.0
TYP.
MAX.
63.0
A
B
0.44
0.36
0.35
0.35
4.4
0.56
0.48
0.44
0.44
4.6
22.0
B1
C
18.9
17.3
C1
D
17.3
181.1
72.0
D1
E
1.62
2.29
1.42
2.92
3.94
0.89
1.83
2.6
102.4
61.8
e
1.57
3.07
4.25
1.2
e1
H
120.9
167.3
47.2
L
P025H
3/4
BSR31 BSR33
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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4/4
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