BTA10-600 [STMICROELECTRONICS]

TRIACS; 双向可控硅


型号：	BTA10-600
厂家：	ST
描述：	TRIACS 双向可控硅可控硅三端双向交流开关
文件：	总4页 (文件大小：63K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BTA10 GP

TRIACS

FEATURES

LOW I = 13mA max

HIGH SURGE CURRENT : I

= 120A

TSM

SPECIFIED IN FOUR QUADRANTS

INSULATING VOLTAGE = 2500V

(UL RECOGNIZED : E81734)

(RMS)

DESCRIPTION

The BTA10 GP’s use high performance, glass pas-

sivated chips.

The insulated TO220AB package, the high surge

current and low holding current make this family

well adapted to LIGHT DIMMER applications.

TO220AB

(Plastic)

ABSOLUTE RATINGS (limiting values)

Symbol

Parameter

Value

Unit

RMS on-state current

(360° conduction angle)

Tc = 90 °C

T(RMS)

Non repetitive surge peak on-state current

( Tj initial = 25°C )

tp = 8.3 ms

tp = 10 ms

126

120

TSM

I t

A s

I t value

dI/dt

Critical rate of rise of on-state current

Repetitive

F = 50 Hz

A/µs

Gate supply : I = 500mA di /dt = 1A/µs

Non

Repetitive

Tstg

Storage and operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

Maximum lead temperature for soldering during 10 s at 4.5 mm

from case

260

°C

Symbol

Parameter

BTA10-

Unit

400 GP

400

600 GP

Repetitive peak off-state voltage

Tj = 125 °C

600

DRM

RRM

1/4

March 1995

BTA10 GP

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

°C/W

Rth (j-a)

Junction to ambient

Rth (j-c) DC Junction to case for DC

Rth (j-c) AC Junction to case for 360° conduction angle

( F= 50 Hz)

GATE CHARACTERISTICS (maximum values)

= 1W

= 10W (tp = 20 µs)

= 4A (tp = 20 µs)

V = 16V (tp = 20 µs).

G (AV)

ELECTRICAL CHARACTERISTICS

Symbol

Test Conditions

Quadrant

Suffix

Unit

V =12V (DC) R =33Ω

Tj=25°C

I-II-III

MAX

MIN

V =12V (DC) R =33Ω

Tj=25°C

Tj=110°C

Tj=25°C

I-II-III-IV

1.5

0.2

V =V

R =3.3kΩ

DRM

tgt

V =V

= 500mA

TYP

µs

dI /dt = 3A/µs

=1.2 I

Tj=25°C

I-III-IV

TYP

G GT

I = 100mA gate open

Tj=25°C

Tj=110°C

MAX

MIN

= 14A tp= 380µs

1.5

0.01

0.5

Rated

DRM

RRM

DRM

RRM

dV/dt *

Linear slope up to V =67%V

gate open

V/µs

DRM

TYP

MIN

100

(dV/dt)c * (dI/dt)c= 2.2A/ms

Tj=110°C

TYP

* For either polarity of electrode A₂voltage with reference to electrode A₁.

2/4

BTA10 GP

Fig.1 : Maximum RMS power dissipation versus RMS

on-state current (F=50Hz).

(curves are cut off by (dI/dt)c limitation)

Fig.2

Correlation between maximum RMS power

dissipation and maximum allowable temperatures (T

and T

contact.

amb

) for different thermal resistances heatsink +

case

Tcase (^oC)

-85

P (W)

P(W)

180 ^O

Rth = 0 ^oC/W

2.5^oC/W

= 180^o

= 120^o

= 90^o

= 60^o

5^oC/W

10^oC/W

-95

-105

-115

-125

= 30 ^o

Tamb (^oC)

20 40

(A)

T(RMS)

100 120 140

Fig.3 : RMS on-state current versus case temperature.

Fig.4 : Relative variation of thermal impedance versus

pulse duration.

Zth/Rth

(A)

T(RMS)

Zth(j-c)

0.1

Zth(j-a)

= 180^o

Tcase(^oC)

10 20 30 40 50 60 70 80 90 100 110 120 130

tp(s)

1E+2 5E+2

0.01

1E-3

1E-2

1E-1

1E+0

1E+1

Fig.5 : Relative variation of gate trigger current and

Fig.6 : Non repetitive surge peak on-state current

holding current versus junction temperature.

versus number of cycles.

3/4

BTA10 GP

Fig.7 : Non repetitive surge peak on-state current for a

Fig.8 : On-state characteristics (maximum values).

sinusoidal pulse with width

corresponding values of I t.

≤

10ms, and

PACKAGE MECHANICAL DATA

TO220AB Plastic

REF.

DIMENSIONS

Millimeters Inches

Min. Min.

Max.

10.50

15.87

14.70

6.85

4.50

3.00

4.82

4.00

1.39

0.65

2.70

5.58

1.20

0.96

Max.

0.413

0.625

0.579

0.270

0.178

0.119

0.190

0.158

0.055

0.026

0.107

0.22

10.20

14.23

12.70

5.85

0.401

0.560

0.500

0.230

2.54

4.48

3.55

1.15

0.35

2.10

4.58

0.80

0.64

0.100

0.176

0.140

0.045

0.013

0.082

0.18

0.031

0.025

0.048

0.038

Cooling method : C

Marking : type number

Weight : 2.3 g

Recommended torque value : 0.8 m.N.

Maximum torque value : 1 m.N.

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability

for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may

result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.

Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all

information previously supplied.

SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems

without express written approval of SGS-THOMSON Microelectronics.

SGS-THOMSON Microelectronics GROUP OF COMPANIES

Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-

lands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.

4/4

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