BTA12-600 [STMICROELECTRONICS]
12A TRIACS; 12A双向可控硅
| 型号： | BTA12-600 |
| 厂家： | 
ST |
| 描述： | 12A TRIACS |
| 文件： | 总7页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BTA/BTB12 and T12 Series
®
SNUBBERLESS™, LOGIC LEVEL & STANDARD
12A TRIACS
MAIN FEATURES:
A2
Symbol
Value
12
Unit
I
A
V
G
T(RMS)
V
/V
A1
600 and 800
DRM RRM
A2
I
5 to 50
mA
GT (Q )
1
DESCRIPTION
A1
A2
G
Available either in through-hole or surface-mount
packages, the BTA/BTB12 and T12 triac series is
suitable for general purpose AC switching. They
can be used as an ON/OFF function in
applications such as static relays, heating
regulation, induction motor starting circuits... or for
phase control operation in light dimmers, motor
speed controllers,...
2
D PAK
(T12-G)
A2
The snubberless versions (BTA/BTB...W and T12
series) are specially recommended for use on
inductive loads, thanks to their high commutation
performances. Logic level versions are designed
to interface directly with low power drivers such as
microcontrollers. By using an internal ceramic
pad, the BTA series provides voltage insulated tab
(rated at 2500V RMS) complying with UL
standards (File ref.: E81734)
A1
A2
A1
A2
G
G
TO-220AB Insulated
(BTA12)
TO-220AB
(BTB12)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
²
I
RMS on-state current (full sine wave)
Tc = 105°C
D PAK/TO-220AB
TO-220AB Ins.
F = 50 Hz
T(RMS)
12
A
A
Tc = 90°C
t = 20 ms
I
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
120
126
TSM
F = 60 Hz
t = 16.7 ms
²
²
²
tp = 10 ms
78
A s
I t
I t Value for fusing
Critical rate of rise of on-state current
dI/dt
F = 120 Hz
Tj = 125°C
Tj = 25°C
50
/V
A/µs
V
I
= 2 x I , tr ≤ 100 ns
G
GT
V
Non repetitive surge peak off-state
voltage
DRM RRM
+ 100
V
/V
tp = 10 ms
tp = 20 µs
DSM RSM
I
Peak gate current
Tj = 125°C
Tj = 125°C
4
1
A
GM
P
Average gate power dissipation
W
G(AV)
T
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
stg
°C
T
j
September 2002 - Ed: 6A
1/7
BTA/BTB12 and T12 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■ SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)
Symbol
Test Conditions
Quadrant
T12
T1235
35
BTA/BTB12
Unit
TW
SW
10
CW
BW
I
(1)
mA
V
I - II - III MAX.
I - II - III MAX.
5
35
50
GT
V
V
V
= 12 V
R = 30 Ω
L
D
1.3
0.2
GT
V
= V
R = 3.3 kΩ I - II - III MIN.
D
DRM
L
GD
V
Tj = 125°C
I
(2)
I = 100 mA
MAX.
35
50
60
10
10
15
15
25
30
35
50
60
50
70
80
mA
mA
H
T
I
I
= 1.2 I
I - III
II
MAX.
G
GT
L
dV/dt (2)
V
= 67 %V
gate open
DRM
D
MIN.
MIN.
500
20
40
500
1000
V/µs
Tj = 125°C
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125°C
(dV/dt)c = 10 V/µs Tj = 125°C
-
-
3.5
1
6.5
2.9
-
-
-
-
-
A/ms
Without snubber
Tj = 125°C
6.5
-
6.5
12
■ STANDARD (4 Quadrants)
Symbol
Test Conditions
Quadrant
BTA/BTB12
Unit
C
B
I
(1)
I - II - III
IV
25
50
50
100
mA
GT
MAX.
V
V
= 12 V
R = 30 Ω
L
D
D
V
ALL
ALL
MAX.
MIN.
1.3
0.2
V
V
GT
V
= V
R = 3.3 kΩ Tj = 125°C
GD
DRM
L
I
(2)
I = 500 mA
MAX.
MAX.
25
40
80
200
5
50
50
mA
mA
H
T
I
I
= 1.2 I
I - III - IV
II
G
GT
L
100
400
10
dV/dt (2)
V
= 67 %V
gate open Tj = 125°C
MIN.
MIN.
V/µs
V/µs
D
DRM
(dV/dt)c (2) (dI/dt)c = 5.3 A/ms
Tj = 125°C
STATIC CHARACTERISTICS
Symbol
Test Conditions
Tj = 25°C
Value
Unit
V (2)
I
= 17 A
tp = 380 µs
MAX.
MAX.
MAX.
1.55
0.85
35
V
V
T
TM
V
(2)
Threshold voltage
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
to
R (2)
Dynamic resistance
mΩ
µA
mA
d
I
I
V
= V
RRM
5
DRM
RRM
DRM
MAX.
1
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
2/7
BTA/BTB12 and T12 Series
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
²
R
Junction to case (AC)
°C/W
1.4
2.3
45
th(j-c)
D PAK/TO-220AB
TO-220AB Insulated
²
²
R
Junction to ambient
°C/W
S = 1 cm
D PAK
th(j-a)
TO-220AB
TO-220AB Insulated
60
S = Copper surface under tab
PRODUCT SELECTOR
Voltage (xxx)
Package
Part Number
Sensitivity
Type
600 V
800 V
BTA/BTB12-xxxB
BTA/BTB12-xxxBW
BTA/BTB12-xxxC
BTA/BTB12-xxxCW
BTA/BTB12-xxxSW
BTA/BTB12-xxxTW
T1235-xxxG
X
X
X
X
X
X
X
X
X
X
X
X
X
X
50 mA
50 mA
25 mA
35 mA
10 mA
5 mA
Standard
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
Snubberless
Standard
Snubberless
Logic level
Logic Level
Snubberless
²
35 mA
D PAK
BTB: non insulated TO-220AB package
ORDERING INFORMATION
BT A 12 - 600 BW (RG)
TRIAC
SERIES
PACKING MODE
Blank: Bulk
RG:Tube
SENSITIVITY & TYPE
B: 50mA STANDARD
BW: 50mA SNUBBERLESS
C: 25mA STANDARD
CW: 35mA SNUBBERLESS
SW: 10mA LOGIC LEVEL
TW: 5mA LOGIC LEVEL
INSULATION:
A: insulated
B: non insulated
VOLTAGE:
600: 600V
800: 800V
CURRENT: 12A
T 12 35 - 600 G (-TR)
TRIAC
SERIES
PACKAGE:
G: D2PAK
CURRENT: 12A
VOLTAGE:
PACKING MODE:
Blank:Tube
-TR:Tape & Reel
600: 600V
800: 800V
SENSITIVITY:
35: 35mA
3/7
BTA/BTB12 and T12 Series
OTHER INFORMATION
Part Number
Base
quantity
Packing
mode
Marking
Weight
BTA/BTB12-xxxyz
BTA/BTB12-xxxyzRG
T1235-xxxG
BTA/BTB12-xxxyz
BTA/BTB12-xxxyz
T1235xxxG
2.3 g
2.3 g
1.5 g
1.5 g
250
50
Bulk
Tube
50
Tube
T1235-xxxG-TR
T1235xxxG
1000
Tape & reel
Note: xxx = voltage, yy = sensitivity, z = type
Fig. 1: Maximum power dissipation versus RMS
Fig. 2-1: RMS on-state current versus case
on-state current (full cycle).
temperature (full cycle).
P (W)
IT(RMS) (A)
16
14
13
BTB/T12
14
12
10
8
12
11
10
BTA
9
8
7
6
5
4
3
2
1
0
6
4
2
IT(RMS)(A)
Tc(°C)
0
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
10 11 12
Fig. 2-2: RMS on-state current versus ambient
temperature (printed circuit board FR4, copper
thickness: 35µm),full cycle.
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
K=[Zth/Rth]
IT(RMS) (A)
3.5
1E+0
2
D PAK
2
Zth(j-c)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
(S=1cm )
Zth(j-a)
1E-1
Tamb(°C)
50 75
tp(s)
1E-2
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0
25
100
125
4/7
BTA/BTB12 and T12 Series
Fig. 4:
On-state characteristics (maximum
Fig. 5: Surge peak on-state current versus
values).
number of cycles.
ITM (A)
ITSM (A)
100
10
1
130
120
110
t=20ms
100
Tj max
One cycle
Non repetitive
Tj initial=25°C
90
80
70
60
Tj=25°C
Repetitive
Tc=90°C
50
40
30
20
Tj max.
Vto = 0.85 V
Rd = 35 mΩ
Number of cycles
VTM(V)
10
0
1
10
100
1000
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 6: Non-repetitive surge peak on-state
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
current for
a
sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM (A), I²t (A²s)
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
2.5
Tj initial=25°C
dI/dt limitation:
50A/µs
1000
100
10
2.0
IGT
ITSM
I²t
1.5
IH & IL
1.0
0.5
tp (ms)
Tj(°C)
40 60
0.0
-40 -20
0.01
0.10
1.00
10.00
0
20
80 100 120 140
Fig. 8-1: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values) (BW/CW/T1235).
Fig. 8-2: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values) (TW).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
5.0
4.5
4.0
2.8
SW
2.4
3.5
2.0
TW
C
3.0
2.5
2.0
1.5
1.0
1.6
B
BW/CW/T1235
1.2
0.8
0.4
(dV/dt)c (V/µs)
(dV/dt)c (V/µs)
0.5
0.0
0.0
0.1
1.0
10.0
100.0
0.1
1.0
10.0
100.0
5/7
BTA/BTB12 and T12 Series
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
Fig. 10: D²PAK Thermal resistance junction to
ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35 µm).
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
Rth(j-a) (°C/W)
6
80
D²PAK
70
60
50
40
30
20
5
4
3
2
1
10
Tj (°C)
S(cm²)
0
0
0
4
8
12
16
20
24
28
32
36
40
0
25
50
75
100
125
PACKAGE MECHANICAL DATA
D²PAK (Plastic)
DIMENSIONS
Millimeters
REF.
Inches
Typ. Max. Min. Typ. Max.
A
E
Min.
C2
L2
L3
A
A1
A2
B
4.30
2.49
0.03
0.70
1.25
0.45
1.21
8.95
10.00
4.88
15.00
1.27
1.40
4.60 0.169
2.69 0.098
0.23 0.001
0.93 0.027
0.181
0.106
0.009
0.037
D
L
B2
C
1.40
0.048 0.055
0.60 0.017
1.36 0.047
9.35 0.352
10.28 0.393
5.28 0.192
15.85 0.590
1.40 0.050
1.75 0.055
0.024
0.054
0.368
0.405
0.208
0.624
0.055
0.069
A1
C2
D
B2
B
R
C
E
G
G
L
A2
2.0 MIN.
FLAT ZONE
L2
L3
R
0.40
0.016
V2
V2
0°
8°
0°
8°
FOOTPRINT DIMENSIONS (in millimeters)
D²PAK (Plastic)
16.90
10.30
5.08
1.30
3.70
8.90
6/7
BTA/BTB12 and T12 Series
PACKAGE MECHANICAL DATA
TO-220AB / TO-220AB Ins.
DIMENSIONS
B
REF.
Millimeters
Inches
C
b2
Min. Typ. Max. Min. Typ. Max.
A
a1
a2
B
15.20
15.90 0.598
0.625
L
3.75
0.147
F
I
13.00
10.00
0.61
1.23
4.40
0.49
2.40
2.40
6.20
3.75
14.00 0.511
10.40 0.393
0.88 0.024
1.32 0.048
4.60 0.173
0.70 0.019
2.72 0.094
2.70 0.094
6.60 0.244
3.85 0.147
0.551
0.409
0.034
0.051
0.181
0.027
0.107
0.106
0.259
0.151
A
b1
b2
C
l4
c1
c2
e
c2
a1
l3
l2
a2
F
I
I4
L
15.80 16.40 16.80 0.622 0.646 0.661
b1
2.65
1.14
1.14
2.95 0.104
1.70 0.044
1.70 0.044
0.116
0.066
0.066
M
c1
l2
l3
M
e
2.60
0.102
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
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7/7
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