BTA12-700BW [STMICROELECTRONICS]

700V, 12A, SNUBBERLESS TRIAC, TO-220AB, PLASTIC, TO-220AB, 3 PIN;


型号：	BTA12-700BW
厂家：	ST
描述：	700V, 12A, SNUBBERLESS TRIAC, TO-220AB, PLASTIC, TO-220AB, 3 PIN 局域网栅三端双向交流开关栅极
文件：	总5页 (文件大小：70K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BTA12 BW/CW

BTB12 BW/CW

SNUBBERLESS TRIACS

FEATURES

HIGH COMMUTATION : (dI/dt)c > 12A/ms

without snubber

HIGH SURGE CURRENT : I

= 120A

TSM

DRM

UP TO 800V

BTA Family :

INSULATINGVOLTAGE = 2500V

(UL RECOGNIZED : E81734)

(RMS)

DESCRIPTION

The BTA/BTB12 BW/CW triac family are high per-

formance glass passivated chips technology.

The SNUBBERLESS concept offer suppression

of RC network and it is suitable for application

such as phase control and static switching on in-

ductive or resistive load.

TO220AB

(Plastic)

ABSOLUTE RATINGS (limiting values)

Symbol

Parameter

Value

Unit

RMS on-state current

(360° conduction angle)

BTA

BTB

Tc = 85 °C

Tc = 95 °C

tp = 8.3 ms

tp = 10 ms

T(RMS)

Non repetitive surge peak on-state current

( Tj initial = 25°C )

126

120

TSM

I t

A s

I t value

dI/dt

Critical rate of rise of on-state current

Repetitive

F = 50 Hz

A/µs

Gate supply : I = 500mA di /dt = 1A/µs

Non

100

Repetitive

Tstg

Storage and operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

Maximum lead temperature for soldering during 10 s at 4.5 mm

from case

260

°C

Symbol

Parameter

BTA / BTB12-... BW/CW

Unit

400

600

700

800

Repetitive peak off-state voltage

Tj = 125 °C

400

600

800

DRM

RRM

1/5

March 1995

BTA12 BW/CW / BTB12 BW/CW

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

°C/W

Rth (j-a)

Junction to ambient

Rth (j-c) DC Junction to case for DC

BTA

BTB

BTA

BTB

3.3

2.7

Rth (j-c) AC Junction to case for 360° conduction angle

2.5

°C/W

( F= 50 Hz)

2.0

GATE CHARACTERISTICS (maximum values)

= 1W

= 10W (tp = 20 µs)

= 4A (tp = 20 µs)

V = 16V (tp = 20 µs).

G (AV)

ELECTRICAL CHARACTERISTICS

Symbol

Test Conditions

Quadrant

Suffix

Unit

V =12V (DC) R =33Ω

Tj=25°C

I-II-III

MIN

MAX

MIN

V =12V (DC) R =33Ω

Tj=25°C

Tj=125°C

Tj=25°C

I-II-III

1.5

0.2

V =V

R =3.3kΩ

DRM

tgt

V =V

= 500mA

TYP

µs

dI /dt = 3A/µs

=1.2 I

G GT

Tj=25°C

I-III

TYP

MAX

MIN

I-III

I = 500mA gate open

Tj=25°C

Tj=125°C

= 17A tp= 380µs

1.60

0.01

Rated

DRM

RRM

DRM

RRM

dV/dt *

Linear slope up to V =67%V

gate open

500

750

250

500

6.5

V/µs

DRM

TYP

MIN

(dI/dt)c *

Without snubber

Tj=125°C

A/ms

TYP

* For either polarity of electrode A voltage with reference to electrode A .

2/5

BTA12 BW/CW / BTB12 BW/CW

ORDERING INFORMATION

Package

/ V

RRM

Sensitivity Specification

T(RMS)

DRM

BTA

400

600

700

800

400

600

700

800

(Insulated)

BTB

(Uninsulated)

Fig.1 : Maximum RMS power dissipation versus RMS

on-state current (F=50Hz).

(Curves are cut off by (dI/dt)c limitation)

Fig.2

Correlation between maximum RMS power

amb

) for different thermal resistances heatsink +

dissipation and maximum allowable temperatures (T

and T

case

contact (BTA).

Fig.3

Correlation between maximum RMS power

amb

) for different thermal resistances heatsink +

Fig.4 : RMS on-state current versus case temperature.

dissipation and maximum allowable temperatures (T

and T

case

contact (BTB).

3/5

BTA12 BW/CW / BTB12 BW/CW

Fig.5 : Relative variation of thermal impedance versus

Fig.6 : Relative variation of gate trigger current and

pulse duration.

holding current versus junction temperature.

Zth/Rth

Zth(j-c)

0.1

Zth(j-a)

tp(s)

1E+2 5E+2

0.01

1E-3

1E-2

1E-1

1E+0

1E+1

Fig.7 : Non Repetitive surge peak on-state current

Fig.8 : Non repetitive surge peak on-state current for a

versus number of cycles.

sinusoidal pulse with width

corresponding value of I t.

≤

10ms, and

Fig.9 : On-state characteristics (maximum values).

4/5

BTA12 BW/CW / BTB12 BW/CW

PACKAGE MECHANICAL DATA

TO220AB Plastic

REF.

DIMENSIONS

Millimeters Inches

Min. Min.

Max.

10.50

15.87

14.70

6.85

4.50

3.00

4.82

4.00

1.39

0.65

2.70

5.58

1.20

0.96

Max.

0.413

0.625

0.579

0.270

0.178

0.119

0.190

0.158

0.055

0.026

0.107

0.22

10.20

14.23

12.70

5.85

0.401

0.560

0.500

0.230

2.54

4.48

3.55

1.15

0.35

2.10

4.58

0.80

0.64

0.100

0.176

0.140

0.045

0.013

0.082

0.18

0.031

0.025

0.048

0.038

Cooling method : C

Marking : type number

Weight : 2.3 g

Recommended torque value : 0.8 m.N.

Maximum torque value : 1 m.N.

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability

for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may

result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.

Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all

information previously supplied.

SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems

without express written approval of SGS-THOMSON Microelectronics.

SGS-THOMSON Microelectronics GROUP OF COMPANIES

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5/5

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