BTB-600B [STMICROELECTRONICS]
8A TRIACS; 8A双向可控硅
| 型号： | BTB-600B |
| 厂家： | 
ST |
| 描述： | 8A TRIACS |
| 文件： | 总10页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BTA/BTB08 and T8 Series
®
SNUBBERLESS™, LOGIC LEVEL & STANDARD
8A TRIACS
MAIN FEATURES:
A2
A2
A2
Symbol
Value
8
Unit
A
G
I
A1
T(RMS)
A1
A2
G
A2
G
A1
V
/V
600 and 800
V
DRM RRM
2
DPAK
(T8-B)
D PAK
(T8-G)
I
5 to 50
mA
GT (Q )
1
A2
DESCRIPTION
Available either in through-hole or surface-mount
packages, the BTA/BTB08 and T8 triac series is
suitable for general purpose AC switching. They
can be used as an ON/OFF function in
applications such as static relays, heating
regulation, induction motor starting circuits... or for
phase control operation in light dimmers, motor
speed controllers,...
A1
A2
IPAK
(T8-H)
G
A2
The snubberless versions (BTA/BTB...W and T8
series) are specially recommended for use on
inductive loads, thanks to their high commutation
performances. By using an internal ceramic pad,
the BTA series provides voltage insulated tab
(rated at 2500V RMS) complying with UL
standards (File ref.: E81734)
A1
A2
A1
A2
G
G
TO-220AB Insulated
(BTA08)
TO-220AB
(BTB08)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
²
I
RMS on-state current (full sine wave)
DPAK / D PAK
T(RMS)
Tc = 110°C
IPAK / TO-220AB
8
A
A
TO-220AB Ins.
F = 50 Hz
Tc = 100°C
t = 20 ms
I
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
80
84
TSM
F = 60 Hz
t = 16.7 ms
²
²
²
tp = 10 ms
36
A s
I t
I t Value for fusing
Critical rate of rise of on-state current
dI/dt
F = 120 Hz
Tj = 125°C
50
A/µs
I
= 2 x I , tr ≤ 100 ns
G
GT
I
Peak gate current
tp = 20 µs
Tj = 125°C
Tj = 125°C
4
1
A
GM
P
Average gate power dissipation
W
G(AV)
T
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
stg
°C
T
j
April 2002 - Ed: 5A
1/10
BTA/BTB08 and T8 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■ SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)
Symbol
Test Conditions
Quadrant
T8
BTA/BTB08
Unit
T810 T835
TW
SW
CW
BW
I
(1)
mA
V
I - II - III MAX.
I - II - III MAX.
10
35
5
10
35
50
GT
V
V
V
= 12 V
R = 30 Ω
L
D
1.3
GT
V
= V
R = 3.3 kΩ I - II - III
MIN.
0.2
D
DRM
L
GD
V
Tj = 125°C
I
(2)
I = 100 mA
MAX.
MAX.
15
25
30
35
50
60
10
10
15
15
25
30
35
50
60
50
70
80
mA
mA
H
T
I
I
= 1.2 I
I - III
II
G
GT
L
dV/dt (2)
V
= 67 %V
gate open
D
DRM
MIN.
MIN.
40
400
20
40
400
1000
V/µs
Tj = 125°C
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125°C
(dV/dt)c = 10 V/µs Tj = 125°C
5.4
2.8
-
-
-
3.5
1.5
-
5.4
2.8
-
-
-
-
-
A/ms
Without snubber
Tj = 125°C
4.5
4.5
7
■ STANDARD (4 Quadrants)
Symbol
Test Conditions
Quadrant
BTA/BTB08
Unit
C
B
I
(1)
I - II - III
IV
25
50
50
100
mA
GT
MAX.
V
V
= 12 V
R = 30 Ω
D
D
L
V
ALL
ALL
MAX.
MIN.
1.3
0.2
V
V
GT
V
= V
R = 3.3 kΩ Tj = 125°C
GD
DRM
L
I
(2)
I = 500 mA
MAX.
MAX.
25
40
80
200
5
50
50
mA
mA
H
T
I
I
= 1.2 I
I - III - IV
II
G
GT
L
100
400
10
dV/dt (2)
V
= 67 %V
gate open Tj = 125°C
MIN.
MIN.
V/µs
V/µs
D
DRM
(dV/dt)c (2) (dI/dt)c = 3.5 A/ms
Tj = 125°C
STATIC CHARACTERISTICS
Symbol
Test Conditions
Tj = 25°C
Value
Unit
V
(2)
(2)
I
= 11 A
tp = 380 µs
MAX.
MAX.
MAX.
1.55
0.85
50
V
V
TM
TM
V
Threshold voltage
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
to
R (2)
Dynamic resistance
mΩ
µA
mA
d
I
I
V
= V
RRM
5
DRM
RRM
DRM
MAX.
1
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
2/10
BTA/BTB08 and T8 Series
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
²
R
Junction to case (AC)
°C/W
th(j-c)
DPAK / D PAK
1.6
IPAK / TO-220AB
TO-220AB Insulated
2.5
45
70
²
²
R
Junction to ambient
°C/W
th(j-a)
S = 1 cm
D PAK
²
DPAK
S = 0.5 cm
TO-220AB
TO-220AB Insulated
60
IPAK
100
S = Copper surface under tab
PRODUCT SELECTOR
Voltage (xxx)
Package
Part Number
Sensitivity
Type
600 V
800 V
BTA/BTB08-xxxB
BTA/BTB108-xxxBW
BTA/BTB08-xxxC
BTA/BTB08-xxxCW
BTA/BTB08-xxxSW
BTA/BTB08-xxxTW
T810-xxxB
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
50 mA
50 mA
25 mA
35 mA
10 mA
5 mA
Standard
Snubberless
Standard
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
DPAK
Snubberless
Logic level
Logic level
Logic level
Logic level
Snubberless
Snubberless
10 mA
10 mA
35mA
35 mA
T810-xxxH
IPAK
T835-xxxB
DPAK
²
T835-xxxG
D PAK
T835-xxxH
X
X
35 mA
Snubberless
IPAK
BTB: non insulated TO-220AB package
3/10
BTA/BTB08 and T8 Series
ORDERING INFORMATION
BT A 08 - 600 BW (RG)
TRIAC
SERIES
PACKING MODE
Bulk: Blank
RG:Tube
SENSITIVITY & TYPE
B: 50mA STANDARD
BW: 50mA SNUBBERLESS
C: 25mA STANDARD
CW: 35mA SNUBBERLESS
SW: 10mA LOGIC LEVEL
TW: 5mA LOGIC LEVEL
INSULATION:
A: insulated
B: non insulated
VOLTAGE:
600: 600V
800: 800V
CURRENT: 8A
T 8 10 - 600 B (-TR)
TRIAC
SERIES
PACKAGE:
B: DPAK
CURRENT: 8A
G: D2PAK
VOLTAGE:
PACKING MODE:
H: IPAK
600: 600V
800: 800V
Blank:Tube
-TR: DPAK / D2PAK
Tape & Reel
SENSITIVITY:
10: 10mA
35: 35mA
OTHER INFORMATION
Part Number
Base
quantity
Packing
mode
Marking
Weight
BTA/BTB08-xxxyz
BTA/BTB08-xxxyzRG
T8yy-xxxB
BTA/BTB08xxxyz
BTA/BTB08-xxxyz
T8yyxxx
2.3 g
2.3 g
0.3 g
0.3 g
0.4 g
1.5 g
1.5 g
250
50
Bulk
Tube
75
Tube
T8yy-xxxB-TR
T8yy-xxxH
T8yyxxx
2500
75
Tape & reel
Tube
T8yyxxx
T8yy-xxxG
T8yyxxx
50
Tube
T8yy-xxxG-TR
T8yyxxx
1000
Tape & reel
Note: xxx = voltage, yy = sensitivity, z = type
4/10
BTA/BTB08 and T8 Series
Fig. 1: Maximum power dissipation versus RMS
Fig. 2-1: RMS on-state current versus case
on-state current (full cycle).
temperature (full cycle).
P (W)
IT(RMS) (A)
10
9
10
9
BTB/T8
8
8
7
7
BTA
6
5
4
3
2
1
0
6
5
4
3
2
IT(RMS)(A)
Tc(°C)
1
0
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
Fig. 2-2: RMS on-state current versus ambient
temperature (printed circuit board FR4, copper
thickness: 35µm),full cycle.
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
IT(RMS) (A)
K=[Zth/Rth]
3.5
1E+0
Zth(j-c)
D2PAK
DPAK/IPAK
Zth(j-a)
3.0
(S=1cm2)
2.5
1E-1
DPAK
(S=0.5cm2)
2.0
TO-220AB/D²PAK
Zth(j-a)
1.5
1.0
1E-2
0.5
Tamb(°C)
tp(s)
1E-3
0.0
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0
25
50
75
100
125
Fig. 4: On-state characteristics (maximum
Fig. 5: Surge peak on-state current versus
values).
number of cycles.
ITM (A)
ITSM (A)
100
90
80
Tj=Tj max
Tj max.
Vto = 0.85 V
Rd = 50 mΩ
t=20ms
70
One cycle
60
Non repetitive
Tj initial=25°C
50
10
1
Repetitive
Tc=100°C
40
Tj=25°C
30
20
10
VTM(V)
Number of cycles
0
1
10
100
1000
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
5/10
BTA/BTB08 and T8 Series
Fig. 6: Non-repetitive surge peak on-state
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
current for
a
sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
ITSM (A), I²t (A²s)
2.5
1000
Tj initial=25°C
2.0
IGT
dI/dt limitation:
50A/µs
ITSM
1.5
100
IH & IL
1.0
I²t
0.5
tp (ms)
Tj(°C)
60
10
0.0
-40 -20
0.01
0.10
1.00
10.00
0
20
40
80 100 120 140
Fig. 8-1: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values). Snubberless & Logic Level Types
Fig. 8-2: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values). Standard Types
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
1.8
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
TW
C
1.6
B
1.4
T835/CW/BW
1.2
1.0
0.8
T810/SW
0.6
0.4
(dV/dt)c (V/µs)
1.0 10.0
(dV/dt)c (V/µs)
0.2
0.0
0.1
1.0
10.0
100.0
0.1
100.0
2
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
Fig. 10: DPAK and D PAK Thermal resistance
junction to ambient versus copper surface under
tab (printed circuit board FR4, copper thickness:
35 µm).
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
Rth(j-a) (°C/W)
6
100
90
80
70
60
50
40
30
20
5
4
3
2
1
0
DPAK
D²PAK
Tj(°C)
10
0
S(cm²)
0
4
8
12 16 20 24 28 32 36 40
0
25
50
75
100
125
6/10
BTA/BTB08 and T8 Series
PACKAGE MECHANICAL DATA
DPAK (Plastic)
DIMENSIONS
REF.
Millimeters
Inches
Min.
Max
Min.
Max.
A
A1
A2
B
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
0.086
0.035
0.001
0.025
0.204
0.017
0.018
0.236
0.251
0.173
0.368
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.259
0.181
0.397
B2
C
C2
D
E
G
H
L2
L4
R
0.80 typ.
0.031 typ.
0.60
1.00
0.023
0.039
0.2 typ.
0.007 typ.
V2
0°
8°
0°
8°
FOOTPRINT DIMENSIONS (in millimeters)
DPAK (Plastic)
6.7
6.7
3
3
1.6
1.6
2.3 2.3
7/10
BTA/BTB08 and T8 Series
PACKAGE MECHANICAL DATA
D²PAK (Plastic)
DIMENSIONS
Millimeters
Min. Typ. Max. Min. Typ. Max.
A
REF.
Inches
E
C2
L2
A
A1
A2
B
4.30
2.49
0.03
0.70
1.25
0.45
1.21
8.95
10.00
4.88
15.00
1.27
1.40
4.60 0.169
2.69 0.098
0.23 0.001
0.93 0.027
0.181
0.106
0.009
0.037
D
L
B2
C
1.40
0.048 0.055
L3
A1
0.60 0.017
1.36 0.047
9.35 0.352
10.28 0.393
5.28 0.192
15.85 0.590
1.40 0.050
1.75 0.055
0.024
0.054
0.368
0.405
0.208
0.624
0.055
0.069
C2
D
B2
B
R
C
E
G
G
L
A2
L2
L3
R
2.0 MIN.
FLAT ZONE
0.40
0.016
V2
V2
0°
8°
0°
8°
FOOTPRINT DIMENSIONS (in millimeters)
D²PAK (Plastic)
16.90
10.30
5.08
1.30
3.70
8.90
8/10
BTA/BTB08 and T8 Series
PACKAGE MECHANICAL DATA
IPAK (Plastic)
DIMENSIONS
REF.
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A
A1
A3
B
2.2
0.9
2.4
1.1
1.3
0.9
5.4
0.85
0.086
0.035
0.027
0.025
0.204
0.094
0.043
0.051
0.035
0.212
0.033
A
E
C2
0.7
B2
0.64
5.2
L2
B2
B3
B5
B6
C
0.3
0.035
D
0.95
0.6
0.6
6.2
6.6
4.6
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.45
0.48
6
0.017
0.019
0.236
0.252
0.173
H
B3
L1
C2
D
B6
L
A1
B
V1
E
6.4
4.4
15.9
9
G
H
16.3 0.626
B5
C
L
9.4
1.2
1
0.354
0.031
G
A3
L1
L2
V1
0.8
0.8
0.031 0.039
10°
10°
9/10
BTA/BTB08 and T8 Series
PACKAGE MECHANICAL DATA
TO-220AB Ins.
DIMENSIONS
Millimeters
Min. Typ. Max. Min. Typ. Max.
B
C
b2
REF.
Inches
L
A
a1
a2
B
15.20
15.90 0.598
0.625
F
3.75
0.147
I
13.00
10.00
0.61
1.23
4.40
0.49
2.40
2.40
6.20
3.75
14.00 0.511
10.40 0.393
0.88 0.024
1.32 0.048
4.60 0.173
0.70 0.019
2.72 0.094
2.70 0.094
6.60 0.244
3.85 0.147
0.551
0.409
0.034
0.051
0.181
0.027
0.107
0.106
0.259
0.151
A
b1
b2
C
l4
c1
c2
e
c2
a1
l3
l2
F
a2
I
I4
L
15.80 16.40 16.80 0.622 0.646 0.661
2.65
1.14
1.14
2.95 0.104
1.70 0.044
1.70 0.044
0.116
0.066
0.066
l2
l3
M
b1
M
c1
e
2.60
0.102
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
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10/10
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