BTW67-1000 [STMICROELECTRONICS]
50A SCRS; 可控硅50A
| 型号： | BTW67-1000 |
| 厂家： | 
ST |
| 描述： | 50A SCRS |
| 文件： | 总6页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BTW67 and BTW69 Series
®
50A SCRS
STANDARD
Table 1: Main Features
Symbol
A
Value
Unit
IT(RMS)
50
A
G
K
VDRM/VRRM
IGT
600 to 1200
80
V
mA
K
A
G
DESCRIPTION
Available in high power packages, the BTW67 /
BTW69 Series is suitable in applications where
power handling and power dissipation are critical,
such as solid state relays, welding equipment,
high power motor control.
K
A
G
RD91
(BTW67)
TOP3 Ins.
(BTW69)
Based on a clip assembly technology, they offer a
superior performance in surge current handling
capabilities.
Thanks to their internal ceramic pad, they provide
high voltage insulation (2500VRMS), complying
with UL standards (file ref: E81734).
Table 2: Order Codes
Part Numbers
Marking
BTW67xxx
BTW69xxx
BTW67-xxx
BTW69-xxxRG
Table 3: Absolute Ratings (limiting values)
Symbol
Parameter
Value
Unit
Tc = 70°C
Tc = 75°C
Tc = 70°C
Tc = 75°C
RD91
RMS on-state current
IT(RMS)
50
A
(180° conduction angle)
TOP3 Ins.
RD91
Average on-state current
(180° conduction angle)
IT(AV)
32
A
A
TOP3 Ins.
tp = 8.3 ms
tp = 10 ms
610
580
ITSM
Tj = 25°C
Non repetitive surge peak on-state current
²
²
A2S
Tj = 25°C
1680
I t
I t Value for fusing
Critical rate of rise of on-state current IG = 2
x IGT , tr ≤ 100 ns
Tj = 125°C
dI/dt
F = 60 Hz
tp = 20 µs
50
A/µs
IGM
Tj = 125°C
Tj = 125°C
Peak gate current
8
1
A
PG(AV)
Average gate power dissipation
W
Tstg
Tj
- 40 to + 150
- 40 to + 125
Storage junction temperature range
Operating junction temperature range
°C
V
VRGM
Maximum peak reverse gate voltage
5
February 2006
REV. 5
1/6
BTW67 and BTW69 Series
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
Value
8
Unit
MIN.
MAX.
MAX.
IGT
mA
VD = 12 V
RL = 33 Ω
80
VGT
VGD
IH
1.3
V
V
VD = VDRM RL = 3.3 kΩ
IT = 500 mA Gate open
IG = 1.2 x IGT
Tj = 125°C
MIN.
MAX.
MAX.
MIN.
0.2
150
200
1000
1.9
1.0
8.5
10
mA
mA
V/µs
V
IL
VD = 67 % VDRM Gate open
ITM = 100 A tp = 380 µs
Threshold voltage
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
dV/dt
VTM
Vt0
MAX.
MAX.
MAX.
V
Rd
Dynamic resistance
mΩ
µA
mA
IDRM
IRRM
VDRM = VRRM
MAX.
5
Table 5: Thermal resistance
Symbol
Parameter
Value
Unit
°C/W
°C/W
RD91 (Insulated)
TOP3 Insulated
TOP3 Insulated
1.0
0.9
50
Rth(j-c)
Rth(j-a)
Junction to case (D.C.)
Junction to ambient (D.C.)
Figure 1: Maximum average power dissipation
versus average on-state current
Figure 2: Average and D.C. on-state current
versus case temperature
I (A)
T(AV)
P(W)
60
50
40
30
20
10
0
55
50
45
40
35
30
25
20
15
10
5
α = 180°
D.C.
BTW69
BTW67
α = 180°
BTW69
BTW67
360°
T
(°C)
case
I
(A)
T(AV)
α
0
0
5
10
15
20
25
30
35
0
25
50
75
100
125
2/6
BTW67 and BTW69 Series
Figure 3: Relative variation of thermal
impedance versus pulse duration
Figure 4: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature
I
,I ,I [T ] / I ,I ,I [T =25°C]
K=[Z /R
]
GT
H
L
j
GT
H
L
j
th th
2.5
2.0
1.5
1.0
0.5
0.0
1E+0
1E-1
1E-2
1E-3
Z
th(j-c)
Z
th(j-a)
BTW69
IGT
IH & IL
T (°C)
j
t (s)
p
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
-40
-20
0
20
40
60
80
100
120
140
Figure 5: Surge peak on-state current versus
number of cycles
Figure 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of I²t
I
(A)
TSM
I
(A), I2t (A2s)
TSM
600
550
500
450
400
350
300
250
200
150
100
50
5000
Tj initial = 25°C
ITSM
tp=10ms
One cycle
I2t
Non repetitive
Tj initial=25°C
1000
Repetitive
TC=75°C
dI/dt limitation
Number of cycles
t (ms)
p
0
100
1
10
100
1000
0.01
0.10
1.00
10.00
Figure 7: On-state characteristics (maximum
values)
I
(A)
TM
600
100
Tj max.:
Vt0=1.0V
Rd=8.5mΩ
Tj=max
Tj=25°C
10
V
(V)
TM
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
3/6
BTW67 and BTW69 Series
Figure 8: Ordering Information Scheme
BTW 69
-
600 RG
Standard SCR series
Type
67 = 50A in RD91
69 = 50A in TOP3
Voltage
600 = 600V
800 = 800V
1200 = 1200V
Packing mode
RG = Tube
Blanck = Bulk
Table 6: Product Selector
Voltage (xxx)
Part Numbers
Sensitivity
Package
600 V
800 V
1200 V
BTW67-xxx
BTW69-xxx
X
X
X
X
X
X
80 mA
80 mA
RD91
TOP3 Ins.
Figure 9: RD91 Package Mechanical Data
DIMENSIONS
Millimeters
A2
REF.
Inches
L2
L1
Min.
Max.
Min.
Max.
1.575
1.193
0.867
1.063
0.650
0.945
0.551
0.138
0.118
0.035
0.177
0.535
0.138
0.075
43°
A
A1
A2
B
40.00
30.30
22.00
27.00
16.50
24.00
14.00
3.50
3.00
0.90
4.50
13.60
3.50
29.90
1.177
0.531
B2
B1
C
B1
B2
C
C1
C2
E3
F
13.50
C2
C1
N1
A1
1.95
0.70
4.00
11.20
3.10
1.70
33°
0.077
0.027
0.157
0.441
0.122
0.067
33°
N2
B
F
I
L1
L2
N1
N2
E3
1.90
43°
I
A
28°
38°
28°
38°
4/6
BTW67 and BTW69 Series
DIMENSIONS
Figure 10: TOP3 Insulated Package Mechanical Data
REF.
Millimeters
Inches
H
A
Min. Typ. Max. Min. Typ. Max.
R
B
A
B
4.4
1.45
14.35
0.5
4.6 0.173
1.55 0.057
15.60 0.565
0.7 0.020
2.9 0.106
16.5 0.622
21.1 0.815
15.5 0.594
5.65 0.213
3.65 0.134
4.17 0.161
1.40 0.047
0.181
0.061
0.614
0.028
0.114
0.650
0.831
0.610
0.222
0.144
0.164
0.055
ØL
C
D
E
K
G
C
F
2.7
F
15.8
20.4
15.1
5.4
G
H
J
P
K
3.4
ØL
P
4.08
1.20
D
J
J
E
R
4.60
0.181
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at: www.st.com.
Table 7: Ordering Information
Ordering type
Marking
BTW67xxx
BTW69xxx
Package
RD91
Weight Base qty Delivery mode
BTW67-xxx
20 g
25
30
Bulk
BTW69-xxxRG
TOP3 Ins.
4.5 g
Tube
Note: xxx = voltage
Table 8: Revision History
Date
Revision
Description of Changes
Apr-2001
4A
Last update.
TOP3 Insulated delivery mode changed from bulk to tube.
ECOPACK statement added.
13-Feb-2006
5
5/6
BTW67 and BTW69 Series
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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