BU406-X-TF3-T [STMICROELECTRONICS]

SILICON NPN SWITCHING TRANSISTOR; 硅NPN开关晶体管


型号：	BU406-X-TF3-T
厂家：	ST
描述：	SILICON NPN SWITCHING TRANSISTOR 硅NPN开关晶体管晶体开关晶体管
文件：	总4页 (文件大小：154K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UNISONIC TECHNOLOGIES CO., LTD

BU406

NPN PLANAR TRANSISTOR

SILICON NPN SWITCHING

TRANSISTOR

DESCRIPTION

The UTC BU406 is a NPN expitaxial planar transistor. It is a fast

switching device for use in horizontal deflection output stages of

large screens MTV receivers with 110℃CRT.

*Pb-free plating product number: BU406L

ORDERING INFORMATION

Order Number

Pin Assignment

Packing

Package

Normal

Lead Free Plating

BU406-x-TA3-T

BU406-x-TF3-T

BU406-x-T3P-T

BU406L-x-TA3-T

BU406L-x-TF3-T

BU406L-x-T3P-T

TO-220

TO-220F

TO-3P

Tube

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BU406

NPN PLANAR TRANSISTOR

ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

V_CBO

V_CEV

V_CEO

V_EBO

I_C

RATINGS

UNIT

Collector-Base Voltage (I_E=0)

Collector-Emitter Voltage (V_BE=-1.5V)

Collector-Emitter Voltage (I_B=0)

Emitter-Base Voltage (I_C=0)

Collector Current

400

200

Collector Peak Current (repetitive)

Collector Peak Current (tp=10ms)

Base Current

I_CM

I_B

Collector Dissipation (T_C≤25℃)

Junction Temperature

P_C

℃

T_J

150

Storage Temperature

T_STG

-65 ~ +150

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

θ_JA

RATINGS

UNIT

℃/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

θ_JC

2.08

ELECTRICAL CHARACTERISTICS (Ta=25℃)

PARAMETER

SYMBOL

TEST CONDITIONS

V_CE=400V

MIN

TYP

MAX

100

UNIT

µA

Collect Cutoff Current (V_BE=0)

I_CES

V_CE=250V T_C=150°C

V_CE=250V

Emitter Cut-off Current (I_C=0)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

DC Current Gain

I_EBO

V_BE=6V

V_CE(SAT)*I_C=5A, I_B=0.5A

V_BE(SAT)*I_C=5A, I_B=0.5A

1.2

240

h_FE

f_T

V_CE=10V, I_C=500mA

Transition Frequency

I_C=500mA, V_CE=10V

I_C=5A, I_B=0.5A

MHz

µs

Turn-off Time

t_OFF

Is/b

0.75

Second Breakdown Collector Current

*Pulse duration=300µs, duty cycle 1.5%

V_CE=40V, t=10ms

CLASSIFICATION OF h_FE

RANK

RANGE

70 ~ 120

110 ~ 240

UNISONIC TECHNOLOGIES CO., LTD

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BU406

NPN PLANAR TRANSISTOR

TYPICAL CHARACTERISTICS

Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Collector Output Capacitance

f = 1MHz

1000

100

10000

1000

I_C= 10I_B

V_BE(SAT)

100

V_CE(SAT)

100

1000

10000

Collector Current, I_C(mA)

Collector-Base Voltage, V_CB(V)

Safe Operating Area

Power Derating

IC Max. (Pulsed)

IC Max. (Continuous)

TO-220

0.1

100

25 50 75

125 150 175

100

200

Collector-Base Voltage, VCE (V)

Case Temperature, TC (°C)

UNISONIC TECHNOLOGIES CO., LTD

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BU406

NPN PLANAR TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

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