BULT118_03 [STMICROELECTRONICS]

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR; 高压快速开关NPN功率晶体管
BULT118_03
型号: BULT118_03
厂家: ST    ST
描述:

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
高压快速开关NPN功率晶体管

晶体 开关 晶体管 高压
文件: 总7页 (文件大小:234K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BULT118  
®
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
STMicroelectronics PREFERRED  
SALESTYPE  
NPN TRANSISTOR  
HIGH VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
VERY HIGH SWITCHING SPEED  
1
2
3
APPLICATIONS:  
ELECTRONIC BALLASTS FOR  
FLUORESCENT LIGHTING  
FLYBACK AND FORWARD SINGLE  
TRANSISTOR LOW POWER CONVERTERS  
SOT-32  
DESCRIPTION  
The device is manufactured using high voltage  
Multi Epitaxial Planar technology for high  
switching speeds and medium voltage capability.  
INTERNAL SCHEMATIC DIAGRAM  
It uses a Cellular Emitter structure with planar  
edge termination to enhance switching speeds  
while maintaining the wide RBSOA.  
The device is designed for use in lighting  
applications and low cost switch-mode power  
supplies.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
700  
V
V
400  
9
V
2
A
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
4
A
IB  
1
A
IBM  
Base Peak Current (tp < 5 ms)  
2
45  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
W
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/7  
September 2003  
BULT118  
THERMAL DATA  
Rthj-case Thermal Resistance Junction-Case  
Rthj-amb Thermal Resistance Junction-Ambient  
Max  
Max  
2.77  
80  
oC/W  
oC/W  
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)  
Symbol  
Parameter  
Test Conditions  
VCE = 700 V  
Min.  
Typ.  
Max.  
Unit  
ICES  
Collector Cut-off  
Current (VBE = 0)  
100  
500  
µA  
µA  
o
VCE = 700 V  
IE = 10 mA  
IC = 100 mA  
Tj = 125 C  
VEBO  
Emitter-Base Voltage  
9
V
V
VCEO(sus) Collector-Emitter  
Sustaining Voltage  
(IB = 0)  
L = 25 mH  
400  
ICEO  
Collector-Emitter  
Leakage Current  
VCE = 400 V  
250  
µA  
VCE(sat)  
Collector-Emitter  
Saturation Voltage  
IC = 0.5 A  
IC = 1 A  
IC = 2 A  
IB = 0.1 A  
IB = 0.2 A  
IB = 0.4 A  
0.5  
1
1.5  
V
V
V
VBE(sat)  
Base-Emitter  
Saturation Voltage  
IC = 0.5 A  
IC = 1 A  
IC = 2 A  
IB = 0.1 A  
IB = 0.2 A  
IB = 0.4 A  
1.0  
1.2  
1.3  
V
V
V
hFE  
DC Current Gain  
IC = 10 mA  
IC = 0.5 A  
IC = 2 A  
VCE = 5 V  
VCE = 5 V  
VCE = 5 V  
10  
10  
8
50  
RESISTIVE LOAD  
Rise Time  
Storage Time  
Fall Time  
tr  
ts  
tf  
VCC = 125 V  
IB1 = 0.2 A  
IC = 1 A  
IB2 = -0.2 A  
0.4  
3.2  
0.25  
0.7  
4.5  
0.4  
µs  
µs  
µs  
INDUCTIVE LOAD  
Storage Time  
Fall Time  
IC = 1 A  
VBE = -5 V  
Vclamp = 300 V  
IB1 = 0.2 A  
L = 50 mH  
ts  
tf  
0.8  
0.16  
µs  
µs  
Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %  
2/7  
BULT118  
Safe Operating Areas  
Derating Curve  
DC Current Gain  
DC Current Gain  
Collector Emitter Saturation Voltage  
Base Emitter Saturation Voltage  
3/7  
BULT118  
Inductive Load Fall Time  
Inductive Load Storage Time  
Resistive Load Fall Time  
Resistive Load Storage Time  
Reverse Biased SOA  
4/7  
BULT118  
Figure 1: Inductive Load Switching Test Circuits.  
1) Fast electronic switch  
2) Non-inductive Resistor  
3) Fast recovery rectifier  
Figure 2: Resistive Load Switching Test Circuits.  
1) Fast electronic switch  
2) Non-inductive Resistor  
5/7  
BULT118  
SOT-32 (TO-126) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
7.4  
TYP.  
MAX.  
7.8  
MIN.  
0.291  
0.413  
0.028  
0.015  
0.094  
0.039  
0.606  
MAX.  
0.307  
0.425  
0.035  
0.025  
0.106  
0.051  
0.630  
A
B
10.5  
0.7  
10.8  
0.9  
b
b1  
C
c1  
D
e
0.40  
2.4  
0.65  
2.7  
1.0  
1.3  
15.4  
16.0  
2.2  
4.4  
3.8  
0.087  
0.173  
0.150  
e3  
F
G
H
H2  
I
3
3.2  
0.118  
0.126  
0.100  
2.54  
2.15  
1.27  
0.3  
0.084  
0.05  
0.011  
10o  
O
V
10o  
1: Base  
2: Collector  
3: Emitter  
0016114/B  
6/7  
BULT118  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is  
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are  
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a trademark of STMicroelectronics.  
All other names are the property of their respective owners.  
© 2003 STMicroelectronics – All Rights reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
7/7  

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