BULT118_03 [STMICROELECTRONICS]
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR; 高压快速开关NPN功率晶体管型号: | BULT118_03 |
厂家: | ST |
描述: | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
文件: | 总7页 (文件大小:234K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BULT118
®
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■
STMicroelectronics PREFERRED
SALESTYPE
■
■
■
■
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
■
VERY HIGH SWITCHING SPEED
1
2
3
APPLICATIONS:
■
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
SOT-32
■
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
INTERNAL SCHEMATIC DIAGRAM
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
IC
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Value
Unit
700
V
V
400
9
V
2
A
ICM
Collector Peak Current (tp < 5 ms)
Base Current
4
A
IB
1
A
IBM
Base Peak Current (tp < 5 ms)
2
45
A
o
Ptot
Total Dissipation at Tc = 25 C
W
oC
oC
Tstg
Tj
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
1/7
September 2003
BULT118
THERMAL DATA
Rthj-case Thermal Resistance Junction-Case
Rthj-amb Thermal Resistance Junction-Ambient
Max
Max
2.77
80
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCE = 700 V
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
100
500
µA
µA
o
VCE = 700 V
IE = 10 mA
IC = 100 mA
Tj = 125 C
VEBO
Emitter-Base Voltage
9
V
V
VCEO(sus) Collector-Emitter
Sustaining Voltage
(IB = 0)
L = 25 mH
400
ICEO
Collector-Emitter
Leakage Current
VCE = 400 V
250
µA
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 0.5 A
IC = 1 A
IC = 2 A
IB = 0.1 A
IB = 0.2 A
IB = 0.4 A
0.5
1
1.5
V
V
V
VBE(sat)
Base-Emitter
Saturation Voltage
IC = 0.5 A
IC = 1 A
IC = 2 A
IB = 0.1 A
IB = 0.2 A
IB = 0.4 A
1.0
1.2
1.3
V
V
V
hFE
DC Current Gain
IC = 10 mA
IC = 0.5 A
IC = 2 A
VCE = 5 V
VCE = 5 V
VCE = 5 V
10
10
8
50
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
tr
ts
tf
VCC = 125 V
IB1 = 0.2 A
IC = 1 A
IB2 = -0.2 A
0.4
3.2
0.25
0.7
4.5
0.4
µs
µs
µs
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 1 A
VBE = -5 V
Vclamp = 300 V
IB1 = 0.2 A
L = 50 mH
ts
tf
0.8
0.16
µs
µs
Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
2/7
BULT118
Safe Operating Areas
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/7
BULT118
Inductive Load Fall Time
Inductive Load Storage Time
Resistive Load Fall Time
Resistive Load Storage Time
Reverse Biased SOA
4/7
BULT118
Figure 1: Inductive Load Switching Test Circuits.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuits.
1) Fast electronic switch
2) Non-inductive Resistor
5/7
BULT118
SOT-32 (TO-126) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
7.4
TYP.
MAX.
7.8
MIN.
0.291
0.413
0.028
0.015
0.094
0.039
0.606
MAX.
0.307
0.425
0.035
0.025
0.106
0.051
0.630
A
B
10.5
0.7
10.8
0.9
b
b1
C
c1
D
e
0.40
2.4
0.65
2.7
1.0
1.3
15.4
16.0
2.2
4.4
3.8
0.087
0.173
0.150
e3
F
G
H
H2
I
3
3.2
0.118
0.126
0.100
2.54
2.15
1.27
0.3
0.084
0.05
0.011
10o
O
V
10o
1: Base
2: Collector
3: Emitter
0016114/B
6/7
BULT118
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
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http://www.st.com
7/7
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