BUX87 [STMICROELECTRONICS]
HIGH VOLTAGE NPN SILICON POWER TRANSISTOR; 高压硅NPN功率晶体管
| 型号： | BUX87 |
| 厂家： | 
ST |
| 描述： | HIGH VOLTAGE NPN SILICON POWER TRANSISTOR |
| 文件： | 总5页 (文件大小：182K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUX87
®
HIGH VOLTAGE NPN
SILICON POWER TRANSISTOR
■
STMicroelectronics PREFERRED
SALESTYPE
■
■
■
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY (450V VCEO
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
)
■
HIGH DC CURRENT GAIN
APPLICATIONS
1
2
■
FLYBACK AND FORWARD SINGLE
3
TRANSISTOR LOW POWER CONVERTERS
SOT-32
DESCRIPTION
The BUX87 is manufactured using High Voltage
Multi-Epitaxial Planar technology for high
switching speeds and high voltage withstand
capability.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
IC
Parameter
Collector-Emitter Voltage (VBE = -1.5V)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Value
Unit
1000
V
V
450
5
0.5
V
A
ICM
Collector Peak Current (tp < 5 ms)
Base Current
1
A
IB
0.3
A
IBM
Base Peak Current (tp < 5 ms)
0.6
A
o
Ptot
Total Dissipation at Tc = 25 C
40
W
oC
oC
Tstg
Tj
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
1/5
September 2003
BUX87
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
3.12
100
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCE = 1000 V
VCE = 1000 V Tj = 125 C
Min.
Typ.
Max.
Unit
ICEV
Collector Cut-off
Current (VBE = -1.5V)
100
1
µA
mA
o
IEBO
Emitter Cut-off Current VEB = 5 V
(IC = 0)
1
mA
VCEO(sus) Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA
450
5
V
VBEO
Collector-Base
IC = 10 mA
V
Sustaining Voltage
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 0.1 A IB = 0.01 A
IC = 0.2 A IB = 0.02 A
0.8
1
V
V
VBE(sat)
hFE
Base-Emitter
Saturation Voltage
IC = 0.2 A IB = 0.02 A
1
V
DC Current Gain
IC = 50 mA VCE = 5 V
IC = 40 mA VCE = 5 V
50
20
12
fT
Transition Frequency
IC = 50 mA VCE = 10 V f=1MHz
VCC = 250 V IC = 200 mA
MHz
RESISTIVE LOAD
Storage Time
Fall Time
ts
tf
IB1 = 40 mA
IB2= -80 mA
4.5
0.5
µs
µs
tp = 20 µs
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
Derating Curve
2/5
BUX87
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Reverse Biased SOA
3/5
BUX87
SOT-32 (TO-126) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
7.4
TYP.
MAX.
7.8
MIN.
0.291
0.413
0.028
0.015
0.094
0.039
0.606
MAX.
0.307
0.425
0.035
0.025
0.106
0.051
0.630
A
B
10.5
0.7
10.8
0.9
b
b1
C
c1
D
e
0.40
2.4
0.65
2.7
1.0
1.3
15.4
16.0
2.2
4.4
3.8
0.087
0.173
0.150
e3
F
G
H
H2
I
3
3.2
0.118
0.126
0.100
2.54
2.15
1.27
0.3
0.084
0.05
0.011
10o
O
V
10o
1: Base
2: Collector
3: Emitter
0016114/B
4/5
BUX87
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
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