BYT12P-1000A [STMICROELECTRONICS]

12A, 1000V, SILICON, RECTIFIER DIODE;


型号：	BYT12P-1000A
厂家：	ST
描述：	12A, 1000V, SILICON, RECTIFIER DIODE 快速恢复二极管局域网
文件：	总5页 (文件大小：98K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BYT 12P-1000

FAST RECOVERY RECTIFIER DIODE

VERY HIGH REVERSE VOLTAGE CAPABILITY

VERY LOW REVERSE RECOVERY TIME

VERY LOW SWITCHING LOSSES

Cathode connected to case

LOW NOISE TURN-OFF SWITCHING

SUITABLE APPLICATIONS

TO220AC

(Plastic)

FREE WHEELING DIODE IN CONVERTERS

AND MOTOR CONTROL CIRCUITS

RECTIFIER IN S.M.P.S.

ABSOLUTE MAXIMUM RATINGS

Symbol

V_RRM

Parameter

Repetitive Peak Reverse Voltage

Value

Unit

1000

150

V_RSM

Non Repetitive Peak Reverse Voltage

Repetitive Peak Forward Current

RMS Forward Current

I_FRM

t_p10 s

≤

I_{F (RMS)}

I_{F (AV)}

Average Forward Current

T_case= 100 C

= 0.5

I_FSM

Surge Non Repetitive Forward Current

t_p= 10ms

Sinusoidal

Power Dissipation

T_case= 100 C

T_stg

T_j

Storage and Junction Temperature Range

- 40 to + 150

THERMAL RESISTANCE

Symbol

Test Conditions

Value

Unit

C/W

R_{th (j - c)}

Junction-case

October 1999 - Ed: 1B

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BYT 12P-1000

ELECTRICAL CHARACTERISTICS

STATIC CHARACTERISTICS

Synbol

Test Conditions

Min.

Typ.

Max.

Unit

I_R

V_R= V_RRM

T = 25 C

2.5

1.9

1.8

T = 100 C

V_F

I_F= 12A

T = 25 C

T_j= 100°C

RECOVERY CHARACTERISTICS

Symbol

Test Conditions

Min.

Typ.

Max.

155

Unit

t_rr

T = 25 C

I_F= 1A

di /dt = - 15A/ s

V_R= 30V

I_rr= 0.25A

I_F= 0.5A

I_R= 1A

TURN-OFF SWITCHING CHARACTERISTICS (Without Series Inductance)

Symbol

Test Conditions

Min.

Typ.

120

Max.

Unit

t_IRM

200

di /dt = - 50A/ s

V_CC= 200 V I_F= 12A

L_p0.05 H T = 100 C

≤

di /dt = - 100A/ s

See figure 11

I_RM

7.8

di /dt = -50A/ s

di /dt = - 100A/ s

TURN-OFF OVERVOLTAGE COEFFICIENT (With Series Inductance)

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

V_RP

C =

T = 100 C

di /dt = - 12A/ s

V_CC= 200V

L = 12 H

I_F= I_{F (AV)}

See figure 12

4.5

V_CC

To evaluate the conduction losses use the following equations:

V_F= 1.47 + 0.026 I_F

P = 1.47 x IF_(AV)+ 0.026 I_{F (RMS)}

Figure 1. Low frequency power losses versus

average current

Figure 2. Peak current versus form factor

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BYT 12P-1000

Figure 3. Non repetitive peak surge current

versus overload duration

Figure 4. Thermal impedance versus pulse

width

Figure 6. Recovery charge versus di_F/dt

Figure 5. Voltage drop versus forward current

Figure 8. Peak reverse current versus di_F/d_t-

Figure 7. Recovery time versus di_F/d_t-

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BYT 12P-1000

Figure 9. Peak forward voltage versus di_F/d_tt

Figure 10. Dynamic parameters versus

junction temperature.

Figure 11. Turn-off switching characteristics (without series inductance).

Figure 12. Turn-off switching characteristics (with series inductance)

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BYT 12P-1000

PACKAGE MECHANICAL DATA :

TO220AC Plastic

REF.

DIMENSIONS

Millimeters Inches

Min. Max. Min.

4.40 4.60

Max.

0.181

0.051

0.107

0.027

0.034

0.066

0.202

0.409

0.173

0.048

0.094

0.019

0.024

0.044

0.194

0.393

1.23

2.40

0.49

0.61

1.14

4.95

10.00

1.32

2.72

0.70

0.88

1.70

5.15

10.40

Ø I

16.40 typ.

0.645 typ.

13.00

2.65

15.25

6.20

14.00

2.95

15.75

6.60

0.511

0.104

0.600

0.244

0.137

0.551

0.116

0.620

0.259

0.154

3.50

3.93

2.6 typ.

0.102 typ.

Diam. I

3.75

3.85

0.147

0.151

Marking: type number

Cooling method: by conduction (method C)

Weight : 1.86g

Recommended torque value : 80cm. N

Maximum torque value : 100cm. N

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of

use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted

by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to

change without notice. This publication supersedes and replaces all information previously supplied.

STMicroelectronics products are not authorizedforuseas critical components inlife support devices or systems without express writtenapproval

of STMicroelectronics.

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