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BYT260PIV-1000 [STMICROELECTRONICS]

60A, 1000V, SILICON, RECTIFIER DIODE, ISOTOP-4;
BYT260PIV-1000
型号： BYT260PIV-1000
厂家： ST    ST
描述：

60A, 1000V, SILICON, RECTIFIER DIODE, ISOTOP-4

超快恢复二极管 快速恢复二极管 局域网
文件： 总5页 (文件大小：58K)
中文：  中文翻译
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BYT 30PI- 400  
FAST RECOVERY RECTIFIER DIODES  
VERY LOW REVERSE RECOVERY TIME  
Insulating voltage 2500 VRMS  
VERY LOW SWITCHING LOSSES  
LOW NOISE TURN-OFF SWITCHING  
INSULATED: Capacitance 15pF  
SUITABLE APPLICATIONS  
Isolated  
DOP3I  
(Plastic)  
FREE WHEELING DIODE IN CONVERTERS  
AND MOTOR CONTROL CIRCUITS  
RECTIFIER IN S.M.P.S.  
(limiting values)  
ABSOLUTE RATINGS  
Symbol  
Parameter  
Value  
Unit  
A
IFRM  
IF (RMS)  
IF (AV)  
Repetive Peak Forward Current  
RMS Forward Current  
500  
50  
tp ≤ 10µs  
Tc = 60°C  
A
Average Forward Current  
30  
A
= 0.5  
δ
IFSM  
P
Surge non Repetitive Forward Current  
tp = 10ms  
Sinusoidal  
350  
A
Power Dissipation  
T = 60 C  
50  
W
°
c
Tstg  
Tj  
Storage and Junction Temperature Range  
- 40 to + 150  
- 40 to + 150  
C
°
Symbol  
VRRM  
Parameter  
Repetitive Peak Reverse Voltage  
Non Repetitive Peak Reverse Voltage  
Value  
400  
Unit  
V
VRSM  
440  
V
THERMAL RESISTANCE  
Symbol  
Parameter  
Value  
Unit  
Rth (j - c)  
Junction-case  
1.8  
C/W  
°
October 1999 Ed : 1A  
1/5  
BYT 30PI-400  
ELECTRICAL CHARACTERISTICS  
STATIC CHARACTERISTICS  
Synbol  
Test Conditions  
Min.  
Typ.  
Max.  
35  
Unit  
µA  
IR  
VR = VRRM  
Tj = 25°C  
T = 100 C  
6
mA  
°
j
VF  
IF = 30A  
1.5  
1.4  
T = 25 C  
°
j
V
T = 100 C  
°
j
RECOVERY CHARACTERISTICS  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
100  
50  
Unit  
trr  
T = 25 C  
IF = 1A  
di /dt = - 15A/ s  
F
VR = 30V  
Irr = 0.25A  
°
µ
j
ns  
IF = 0.5A  
IR = 1A  
TURN-OFF SWITCHING CHARACTERISTICS (Without Series Inductance)  
Symbol  
Test Conditions  
Min.  
Typ.  
50  
Max.  
Unit  
tIRM  
di /dt = - 120A/ s  
75  
ns  
µ
VCC = 200 V IF = 30A  
Lp ≤ 0.05µH Tj = 100°C  
See figure 11  
F
di /dt = - 240A/ s  
µ
F
IRM  
9
A
diF/dt = -120A/µs  
12  
di /dt = - 240A/ s  
µ
F
TURN-OFF OVERVOLTAGE COEFFICIENT (With Series Inductance)  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
VRP  
C =  
Tj = 100°C  
di /dt = - 30A/ s  
VCC = 60V  
L = 1 H  
IF = IF (AV)  
See figure 12  
See note  
3.3  
µ
µ
F
p
VCC  
To evaluatethe conductionlosses use the following equations:  
2
VF = 1.1 + 0.0095 IF  
P = 1.1 x IF(AV) + 0.0095 IF (RMS)  
Figure 1. Lowfrequency power lossesversus  
average current  
Figure 2. Peak current versus form factor  
2/5  
BYT 30PI-400  
Figure 3. Non repetitive peak surge current  
versus overload duration  
Figure 4. Thermal impedance versus pulse  
width  
Figure 5. Voltage drop versus forwardcurrent  
Figure 6. Recovery charge versus diF/dt-  
Figure 8. Peak reverse current versus diF/dt-  
Figure 7. Recovery time versus diF/dt-  
3/5  
BYT 30PI-400  
Figure 9. Peak forward voltage versus diF/dt-  
Figure 10. Dynamic parameters versus  
junction temperature.  
Figure 11. Turn-off switching characteristics (without series inductance).  
Figure 12. Turn-off switching characteristics (with series inductance)  
4/5  
BYT 30PI-400  
PACKAGE MECHANICAL DATA :  
Isolated DOP3I Plastic  
REF.  
DIMENSIONS  
Millimeters Inches  
Min. Max. Min.  
4.4 4.6  
Max.  
0.181  
0.061  
0.614  
0.028  
0.114  
0.650  
0.831  
0.610  
0.144  
0.164  
0.444  
0.055  
A
B
C
D
E
F
G
H
K
L
0.173  
0.057  
0.565  
0.020  
0.106  
0.622  
0.815  
0.594  
0.134  
0.161  
0.425  
0.047  
1.45  
14.35  
0.5  
1.55  
15.60  
0.7  
2.7  
2.9  
15.8  
20.4  
15.1  
3.4  
4.08  
10.8  
1.20  
16.5  
21.1  
15.5  
3.65  
4.17  
11.3  
1.40  
N
P
R
4.60 typ.  
0.181 typ.  
: type number  
Marking  
Cooling method: by conduction (method C)  
Weight: 4.52g  
Recommended torque value: 80cm. N  
Maximum torque value: 100cm. N  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of  
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products arenot authorizedforuse as critical componentsin lifesupport devicesor systems withoutexpress writtenapproval  
of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
1999 STMicroelectronics - Printed in Italy - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia  
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
5/5  

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