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BYT71-800 [STMICROELECTRONICS]

FAST RECOVERY RECTIFIER DIODES; 快恢复整流二极管
BYT71-800
型号： BYT71-800
厂家： ST    ST
描述：

FAST RECOVERY RECTIFIER DIODES
快恢复整流二极管

整流二极管 快速恢复二极管
文件： 总7页 (文件大小：296K)
中文：  中文翻译
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®
BYT71(F)-800  
FAST RECOVERY RECTIFIER DIODES  
FEATURES  
HIGH VOLTAGE CAPABILITY  
FAST AND SOFT RECOVERY  
INSULATED PACKAGE :  
.
.
.
insulating voltage = 2000V  
capacitance = 12 pF  
DC  
A
A
K
K
DESCRIPTION  
Single chip rectifier suited for power conversion  
and polarity protection applications.  
This device is packaged in TO220AC and in  
ISOWATT220AC.  
TO220AC  
(Plastic)  
ISOWATT220AC  
(Plastic)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
I
RMS on-state current  
12  
A
F(RMS)  
I
Average forward current  
δ = 0.5  
TO220AC  
Tc=130°C  
6
6
A
A
F(AV)  
ISOWATT220AC Tc=105°C  
I
Surge non repetitive forward current  
tp=10ms  
sinusoidal  
90  
FSM  
Tstg  
Tj  
Storage and junction temperature range  
- 65 to + 150  
- 65 to + 150  
°C  
°C  
Symbol  
Parameter  
BYT71-(F)  
Unit  
600  
600  
800  
V
Repetitive peak off-state voltage  
800  
V
RRM  
August 1998 Ed : 3A  
1/7  
BYT71(F)-800  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
2.3  
Unit  
Rth (j-c)  
Junction to case  
TO220AC  
°C/W  
ISOWATT220AC  
4.9  
ELECTRICAL CHARACTERISTICS  
STATIC CHARACTERISTICS  
Symbol  
Test Conditions  
= V  
Min.  
Typ.  
Max.  
20  
Unit  
µA  
mA  
V
I
**  
T = 25°C  
V
R
R
j
RRM  
T = 100°C  
j
1
V
T = 100°C  
j
I
I
= 6 A  
= 6 A  
1.3  
1.4  
F *  
F
T = 25°C  
j
F
Pulse test : * tp = 380 µs, duty cycle < 2 %  
** tp = 5 ms, duty cycle < 2 %  
RECOVERY CHARACTERISTICS  
Symbol  
Test Conditions  
= 1A  
Min.  
Typ.  
Max.  
Unit  
trr  
T = 25°C  
j
I
F
dI /dt = -15A/µs  
F
300  
ns  
V
R
= 30V  
To evaluate the conduction losses use the following equations :  
2
+ 0.025 x I  
F (RMS)  
P = 1.15 x I  
F(AV)  
2/7  
BYT71(F)-800  
Fig.1  
:
Average forward power dissipation versus  
Fig.2 : Peak current versus form factor.  
average forward current.  
I
P
M(A)  
F(av)(W)  
=1  
=0.2  
=0.5  
T
=0.1  
I
M
=0.05  
=tp/T  
P=7.5W  
tp  
P=10W  
T
P=5W  
I
=tp/T  
tp  
F(av)(A)  
Fig.3 : Forward voltage drop versus forward current  
(maximum values).  
V
FM(V)  
O
Tj=100  
C
I
FM(A)  
Fig.4 : Relative variation of thermal impedance junction  
to case versus pulse duration.  
Fig.5 : Relative variation of thermal impedance junction  
to case versus pulse duration.  
(TO 220 AC)  
(ISOWATT220AC)  
K=Zth(j-c)/Rth(j-c)  
K=Zth(j-c)/Rth(j-c)  
=0.5  
=0.2  
=0.5  
=0.2  
=0.1  
T
T
=0.1  
SINGLE PULSE  
=tp/T  
tp  
=tp/T  
tp  
tp(s)  
SINGLE PULSE  
3/7  
BYT71(F)-800  
Fig.6 : Non repetitive surge peak forward current versus  
overload duration.  
(TO 220 AB)  
Fig.7 : Non repetitive surge peak forward current versus  
overload duration.  
(ISOWATT220AB)  
I
M(A)  
IM  
IM  
=0.5  
=0.5  
t(s)  
t(s)  
Fig.8 : Average current versus ambient temperature.  
Fig.9 : Average current versus ambient temperature.  
(duty cycle : 0.5) (TO 220 AB)  
(duty cycle : 0.5) (ISOWATT220AB)  
I
I
F(av)(A)  
F(av)(A)  
8
8
7
7
Rth(j-a)=Rth(j-c)  
Rth(j-a)=Rth(j-c)  
6
6
5
o
5
4
3
2
1
0
Rth(j-a)=15 C/W  
o
Rth(j-a)=15 C/W  
=0.5  
4
3
2
1
0
=0.5  
T
T
=tp/T  
tp  
=tp/T  
tp  
o
Tamb( C)  
o
Tamb( C)  
0
25  
50  
75  
100 125  
150  
0
25  
50  
75  
100  
125  
150  
Fig.10 : Junction capacitance versus reverse voltage  
applied (Typical values).  
Fig.11 : Recovery charges versus dI /dt.  
F
C(pF)  
F=1Mhz Tj=25 O  
C
90% CONFIDENCE Tj=100  
C
V
R(V)  
4/7  
BYT71(F)-800  
Fig.12 : Peak reverse current versus dIF/dt.  
Fig.13  
:
Dynamic parameters versus junction  
temperature.  
o
I
RM(A)  
]
QRR;IRM[Tj]/QRR;IRM[Tj=100 C  
o
90% CONFIDENCE Tj=100  
C
IF=IF(av)  
dIF/dt(A/us)  
o
Tj( C)  
Fig.14 : Peak forward voltage versus dIF/dt.  
Fig.15 : Recovery time versus dIF/dt.  
V
t
FP(V)  
fr(us)  
40  
35  
30  
25  
20  
15  
10  
5
2.00  
o
Tj=100oC  
90% CONFIDENCE  
90% CONFIDENCE Tj=100  
C
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
0.25  
0.00  
IF=IF(av)  
IF=IF(av)  
dIF/dt(A/us)  
dIF/dt(A/us)  
10 20 30 40 50 60 70 80 90 100  
0
0
0
10 20 30 40 50 60 70 80 90 100  
5/7  
BYT71(F)-800  
PACKAGE MECHANICAL DATA  
TO220 AC Plastic  
REF.  
DIMENSIONS  
Millimeters Inches  
Min. Max.  
H2  
A
Min.  
4.40  
1.23  
2.40  
0.49  
0.61  
1.14  
4.95  
Max.  
4.60  
1.32  
2.72  
0.70  
0.88  
1.70  
5.15  
A
C
0.173 0.181  
0.048 0.051  
0.094 0.107  
0.019 0.027  
0.024 0.034  
0.044 0.066  
0.194 0.202  
C
L5  
L7  
D
Ø I  
E
L6  
F
L2  
F1  
G
A
K
D
L9  
H2  
L2  
L4  
L5  
L6  
L7  
L9  
M
10.00 10.40 0.393 0.409  
16.40 typ. 0.645 typ.  
13.00 14.00 0.511 0.551  
2.65 2.95 0.104 0.116  
15.25 15.75 0.600 0.620  
F1  
L4  
M
F
E
6.20  
3.50  
6.60  
3.93  
0.244 0.259  
0.137 0.154  
0.102 typ.  
G
2.6 typ.  
Diam. I 3.75  
3.85  
0.147 0.151  
Marking : Type number  
Cooling method : C  
Weight : 1.86 g  
.
.
.
.
.
Recommended torque value : 0.55m.N  
Maximum torque value : 0.70m.N  
6/7  
BYT71(F)-800  
PACKAGE MECHANICAL DATA  
ISOWATT220AC Plastic  
A
H
B
REF.  
DIMENSIONS  
Millimeters Inches  
Min. Typ. Max. Min. Typ. Max.  
A
B
D
E
F
4.40  
2.50  
2.40  
0.40  
0.75  
4.60 0.173  
2.70 0.098  
2.75 0.094  
0.70 0.016  
1.00 0.030  
1.70 0.045  
5.20 0.195  
10.40 0.394  
0.181  
0.106  
0.108  
0.028  
0.039  
0.067  
0.205  
0.409  
L6  
L7  
L2  
L3  
F1 1.15  
G
H
4.95  
F1  
10.00  
L2  
16.00  
0.630  
L3 28.60  
L6 15.90  
L7 9.00  
30.60 1.125  
16.40 0.626  
9.30 0.354  
3.20 0.118  
1.205  
0.646  
0.366  
0.126  
F
D
E
Diam 3.00  
G
Marking : Type number  
.
Cooling method : C  
.
Weight : 2 g  
.
Recommended torque value : 0.55m.N  
Maximum torque value : 0.70m.N  
.
.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the conse-  
quences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No li-  
cense is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this pub-  
lication are subject to change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written  
approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
© 1998 STMicroelectronics - Printed in Italy - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Mo-  
rocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.  
7/7  

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