BYT71F-800 [STMICROELECTRONICS]
FAST RECOVERY RECTIFIER DIODES; 快恢复整流二极管型号: | BYT71F-800 |
厂家: | ST |
描述: | FAST RECOVERY RECTIFIER DIODES |
文件: | 总7页 (文件大小:86K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BYT71(F)-800
FAST RECOVERY RECTIFIER DIODES
FEATURES
HIGH VOLTAGE CAPABILITY
.
FAST AND SOFT RECOVERY
.
INSULATED PACKAGE :
.
insulating voltage = 2000V
DC
capacitance= 12 pF
A
A
K
K
DESCRIPTION
Single chip rectifier suited for power conversion
and polarity protection applications.
This device is packaged in TO220AC and in
ISOWATT220AC.
TO220AC
(Plastic)
ISOWATT220AC
(Plastic)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
I
RMS on-state current
12
A
F(RMS)
I
Average forward current
δ = 0.5
TO220AC
Tc=130°C
6
6
A
A
F(AV)
ISOWATT220AC Tc=105°C
I
Surge non repetitive forward current
tp=10ms
sinusoidal
90
FSM
Tstg
Tj
Storage and junction temperature range
- 65 to + 150
- 65 to + 150
°C
°C
Symbol
Parameter
BYT71-(F)
Unit
600
600
800
V
Repetitive peak off-state voltage
800
V
RRM
August 1998 Ed : 3A
1/7
BYT71(F)-800
THERMAL RESISTANCES
Symbol
Parameter
Value
2.3
Unit
Rth (j-c)
Junction to case
TO220AC
°C/W
ISOWATT220AC
4.9
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
Test Conditions
= V
Min.
Typ.
Max.
20
Unit
µA
mA
V
I
R
**
T = 25°C
V
R
j
RRM
T = 100°C
j
1
V
T = 100°C
j
I
I
= 6 A
= 6 A
1.3
1.4
F *
F
F
T = 25°C
j
Pulse test : * tp = 380 µs, duty cycle < 2 %
** tp = 5 ms, duty cycle < 2 %
RECOVERY CHARACTERISTICS
Symbol
Test Conditions
= 1A
Min.
Typ.
Max.
Unit
trr
T = 25°C
j
I
F
dI /dt = -15A/µs
F
300
ns
V
= 30V
R
To evaluate the conduction losses use the following equations :
2
+ 0.025 x I
F (RMS)
P = 1.15 x I
F(AV)
2/7
BYT71(F)-800
Fig.1
:
Average forward power dissipation versus
Fig.2 : Peak current versus form factor.
average forward current.
I
P
M(A)
F(av)(W)
=1
=0.2
=0.5
T
=0.1
I
M
=0.05
=tp/T
P=7.5W
tp
P=10W
T
P=5W
I
=tp/T
tp
F(av)(A)
Fig.3 : Forward voltage drop versus forward current
(maximum values).
V
FM(V)
O
Tj=100
C
I
FM(A)
Fig.4 : Relative variation of thermal impedance junction
to case versus pulse duration.
Fig.5 : Relative variation of thermal impedance junction
to case versus pulse duration.
(TO 220 AC)
(ISOWATT220AC)
K=Zth(j-c)/Rth(j-c)
K=Zth(j-c)/Rth(j-c)
=0.5
=0.2
=0.5
=0.2
=0.1
T
T
=0.1
SINGLE PULSE
=tp/T
tp
=tp/T
tp
tp(s)
SINGLE PULSE
3/7
BYT71(F)-800
Fig.6 : Non repetitive surge peak forward current versus
overload duration.
(TO 220 AB)
Fig.7 : Non repetitive surge peak forward current versus
overload duration.
(ISOWATT220AB)
I
M(A)
IM
IM
=0.5
=0.5
t(s)
t(s)
Fig.8 : Average current versus ambient temperature.
Fig.9 : Average current versus ambient temperature.
(duty cycle : 0.5) (TO 220 AB)
(duty cycle : 0.5) (ISOWATT220AB)
I
I
F(av)(A)
F(av)(A)
8
8
7
7
Rth(j-a)=Rth(j-c)
Rth(j-a)=Rth(j-c)
6
6
5
o
5
Rth(j-a)=15 C/W
o
Rth(j-a)=15 C/W
=0.5
4
4
3
2
1
0
=0.5
T
T
3
2
=tp/T
tp
=tp/T
tp
1
0
o
o
Tamb( C)
Tamb( C)
0
25
50
75
100 125
150
0
25
50
75
100
125
150
Fig.10 : Junction capacitance versus reverse voltage
applied (Typical values).
Fig.11 : Recovery charges versus dI /dt.
F
C(pF)
F=1Mhz Tj=25 O
C
90% CONFIDENCE Tj=100
C
V
R(V)
4/7
BYT71(F)-800
Fig.12 : Peak reverse current versus dIF/dt.
Fig.13
:
Dynamic parameters versus junction
temperature.
o
I
RM(A)
]
QRR;IRM[Tj]/QRR;IRM[Tj=100 C
o
90% CONFIDENCE Tj=100
C
IF=IF(av)
dIF/dt(A/us)
o
Tj( C)
Fig.14 : Peak forward voltage versus dIF/dt.
Fig.15 : Recovery time versus dIF/dt.
V
t
FP(V)
fr(us)
40
35
30
25
20
15
10
5
2.00
o
Tj=100 oC
90% CONFIDENCE Tj=100
C
90% CONFIDENCE
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
IF=IF(av)
IF=IF(av)
dIF/dt(A/us)
dIF/dt(A/us)
10 20 30 40 50 60 70 80 90 100
0
0
0
10 20 30 40 50 60 70 80 90 100
5/7
BYT71(F)-800
PACKAGE MECHANICAL DATA
TO220 AC Plastic
REF.
DIMENSIONS
Millimeters Inches
Min. Max.
H2
A
Min.
4.40
1.23
2.40
0.49
0.61
1.14
4.95
Max.
4.60
1.32
2.72
0.70
0.88
1.70
5.15
A
C
0.173 0.181
0.048 0.051
0.094 0.107
0.019 0.027
0.024 0.034
0.044 0.066
0.194 0.202
C
L5
L7
D
Ø I
E
F
L6
L2
F1
G
A
K
D
L9
H2
L2
L4
L5
L6
L7
L9
M
10.00 10.40 0.393 0.409
16.40 typ. 0.645 typ.
13.00 14.00 0.511 0.551
2.65 2.95 0.104 0.116
15.25 15.75 0.600 0.620
F1
L4
M
F
E
6.20
3.50
6.60
3.93
0.244 0.259
0.137 0.154
0.102 typ.
G
2.6 typ.
Diam. I 3.75
3.85
0.147 0.151
Marking : Typenumber
Cooling method: C
Weight : 1.86 g
.
.
.
.
.
Recommended torque value : 0.55m.N
Maximum torque value : 0.70m.N
6/7
BYT71(F)-800
PACKAGE MECHANICAL DATA
ISOWATT220AC Plastic
A
H
B
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A
B
D
E
F
4.40
2.50
2.40
0.40
0.75
4.60 0.173
2.70 0.098
2.75 0.094
0.70 0.016
1.00 0.030
1.70 0.045
5.20 0.195
10.40 0.394
0.181
0.106
0.108
0.028
0.039
0.067
0.205
0.409
L6
L7
L2
L3
F1 1.15
G
H
4.95
F1
10.00
L2
16.00
0.630
L3 28.60
L6 15.90
L7 9.00
Diam 3.00
30.60 1.125
16.40 0.626
9.30 0.354
3.20 0.118
1.205
0.646
0.366
0.126
F
D
E
G
: Typenumber
Marking
.
.
.
.
.
Cooling method: C
Weight : 2 g
Recommended torque value : 0.55m.N
Maximum torque value : 0.70m.N
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the conse-
quences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No li-
cense is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this pub-
lication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1998 STMicroelectronics - Printed in Italy - All rights reserved.
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7/7
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