BZV47C24 [STMICROELECTRONICS]

2W ZENER DIODES; 2W齐纳二极管
BZV47C24
型号: BZV47C24
厂家: ST    ST
描述:

2W ZENER DIODES
2W齐纳二极管

二极管 齐纳二极管
文件: 总4页 (文件大小:63K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
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BZV47C5V1 200  
2W ZENER DIODES  
FEATURES  
VOLTAGERANGE : 5.1 V to 200 V  
HERMETICALLY SEALEDPLASTICCASE :  
F126 PACKAGE  
HIGH SURGE CAPABILITY: 55 W (10 ms) .  
DESCRIPTION  
F126  
2 W silicon Zener diodes.  
ABSOLUTE RATINGS (Tamb = 25°C)  
Symbol  
Parameter  
Value  
Unit  
P
Power dissipationon infinite heatsink  
T
amb  
= 55°C  
2
W
T
T
- 65 to + 175  
175  
C
°
°C  
Storage temperaturerange  
Maximum junction temperature  
stg  
j
T
230  
°C  
Maximum lead temperaturefor soldering during 10s at 5mm  
from case  
L
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
R
R
(j-l)  
60  
°C/W  
Junction to lead  
th  
(j-a)  
100  
°C/W  
Junction to ambient on printed circuit on recommended pad  
layout  
th  
January 1998 Ed : 2  
1/4  
BZV47C5V1 / BZV47C200  
ELECTRICAL CHARACTERISTIC (Tamb= 25°C)  
TYPES  
VZT @ IZT  
rZK/ IZK  
max.  
IZT  
VZ  
typ.  
IR / VR  
max.  
VR  
IZM  
=55°C  
(2)  
IZSM  
min.  
(1)  
max.  
(1)  
T
amb  
(1)  
(3)  
A
V
V
mA  
10-4/°C  
µA  
V
mA  
BZV47C5V1  
4.8  
5.2  
5.8  
7
5.4  
6
5
2
100  
100  
100  
100  
50  
50  
50  
25  
25  
25  
25  
25  
25  
10  
10  
10  
10  
5
1
5
1
370  
330  
300  
250  
185  
155  
130  
105  
94  
7.8  
7.1  
6.4  
5.4  
4
BZV47C5V6  
BZV47C6V2  
BZV47C7V5  
BZV47C10  
2.5  
3.2  
4.5  
5.5  
6.5  
7
5
1
6.6  
2
5
1
7.9  
2
5
2
9.4  
11.4  
13.8  
16.8  
18.8  
20.8  
22.8  
25.1  
28  
10.6  
12.7  
15.6  
19.1  
21.2  
23.3  
25.6  
28.9  
32  
4
5
7.6  
BZV47C12  
7
1
9.1  
3.3  
2.7  
2.2  
2
BZV47C15  
10  
15  
15  
15  
15  
15  
15  
40  
40  
45  
80  
200  
300  
350  
1
11.4  
13.7  
15.2  
16.7  
18.2  
20.5  
22.8  
27.4  
29.6  
35.7  
51.7  
76  
BZV47C18  
7.5  
7.5  
8
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
BZV47C20  
BZV47C22  
86  
1.8  
1.7  
1.5  
1.3  
1.1  
1
BZV47C24  
8
78  
BZV47C27  
8.5  
8.5  
8.5  
9
69  
BZV47C30  
62  
BZV47C36  
34  
38  
52  
BZV47C39  
37  
41  
48  
BZV47C47  
44  
50  
9
40  
0.85  
0.59  
0.4  
0.27  
0.20  
BZV47C68  
64  
72  
9
27  
BZV47C100  
BZV47C150  
BZV47C200  
Note 1 : Pulse test : tp 50ms  
94  
106  
156  
212  
9
18  
138  
188  
5
9.5  
9.5  
114  
152  
12.8  
9.4  
5
Note 2 : On infiniteheatsink : L = 10mm  
Note 3 : rectangular waveform (tp = 10ms)  
Forward voltage drop : V 1.2 V (Tamb = 25°C, I = 500mA)  
F
F
Fig. 1 : Power dissipation versus ambient  
temperature.  
Fig. 2 :Thermal resistance versus lead length.  
2/4  
BZV47C5V1 / BZV47C200  
Fig. 3 : Relative variation of thermal impedance  
junction to ambient versus pulse duration (PC  
board FR4, Lleads = 10mm).  
Fig. 4 : Junction capacitance versus reverse  
voltage applied (typical values).  
Fig. 6 : Leakage current versus regulation volt-  
age (typical values).  
Fig. 5 : Peak forward current versus peak forward  
voltage drop (typical values).  
IR(µA)  
1E+2  
Tj = 150°C  
VR = 0.75*VZT  
1E+1  
1E+0  
1E-1  
1E-2  
VZT (V)  
1E-3  
1
10  
100  
200  
Fig. 8 : Peak pulse power versus pulse duration  
(rectangularwaveform, maximum values).  
Fig. 7 : Differential resistance versus regulation  
voltage (typical values).  
3/4  
BZV47C5V1 / BZV47C200  
MARKING : Logo, Date Code, Type Code, Cathode Band (for unidirectionaltypes only).  
ORDER CODE  
BZV47C  
5V1  
Type  
Nominal Voltage  
PACKAGE MECHANICAL DATA  
F126 (Plastic)  
DIMENSIONS  
Millimeters Inches  
Min. Typ. Max. Min. Typ. Max.  
REF.  
A
B
6.05  
6.20  
6.35 0.238 0.244 0.250  
26  
31 1.024 1.220  
C
2.95  
0.76  
3.00  
0.81  
3.05 0.116 0.118 0.120  
0.86 0.030 0.032 0.034  
D
L1  
1.27  
0.050  
Note1 : Theleadisnotcontrolled within zoneL1.  
Packaging : standard packaging is in tapeand reel.  
Weight = 0.40 g.  
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the  
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No  
license is granted by implicationor otherwise under any patent or patentrights ofSGS-THOMSON Microelectronics.Specifications mentioned  
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.  
SGS-THOMSONMicroelectronics products are not authorized for use as critical components in life support devices or systems without express  
written approval of SGS-THOMSON Microelectronics.  
1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.  
SGS-THOMSON Microelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco  
The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.  
4/4  

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