BZW50-120B [STMICROELECTRONICS]
TRANSILTM; TRANSILTM型号: | BZW50-120B |
厂家: | ST |
描述: | TRANSILTM |
文件: | 总5页 (文件大小:80K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BZW50-10,B/180,B
TRANSILTM
FEATURES
PEAK PULSE POWER : 5000 W (10/1000µs)
STAND-OFF VOLTAGERANGE :
From 10V to 180V
UNI AND BIDIRECTIONAL TYPES
LOW CLAMPING FACTOR
FAST RESPONSE TIME
UL RECOGNIZED
DESCRIPTION
AG
Transil diodes provide high overvoltage protection
by clamping action. Their instantaneous response
to transient overvoltages makes them particularly
suited to protect voltage sensitive devices such
as MOS Technology and low voltage supplied
IC’s.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
PPP
Parameter
Peakpulse power dissipation (see note 1)
Power dissipation on infinite heatsink
Value
5000
6.5
Unit
W
Tj initial = Tamb
amb = 75°C
P
T
W
IFSM
Non repetitive surge peak forward current
for unidirectionaltypes
tp = 10ms
Tj initial = Tamb
500
A
Tstg
Tj
Storagetemperature range
Maximum junction temperature
- 65 to + 175
175
°C
°C
TL
Maximum lead temperaturefor soldering during 10s at 5mm
from case
230
°C
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.
THERMAL RESISTANCES
Symbol
Rth (j-l)
Parameter
Value
15
Unit
°C/W
°C/W
Junction to leads
Junction to ambient on printed circuit. Llead = 10 mm
Rth (j-a)
65
January 1998 Ed : 2
1/5
BZW50-10,B/180,B
ELECTRICALCHARACTERISTICS
(Tamb = 25°C)
I
I
F
Symbol
VRM
VBR
Parameter
Stand-off voltage
V
V
BR
CL
Breakdown voltage
Clamping voltage
V
V
F
RM
VCL
V
I
I
RM
RM
IRM
Leakage current @ V
Peak pulse current
IPP
α
T
Voltagetemperature coefficient
Forward voltage drop
PP
VF
Types
IRM @ VRM
VBR
@
IR
VCL @ IPP
max
10/1000 s
VCL @ IPP
max
8/20 s
T
C
α
max
min
max
typ
note2
note3 note4
µ
µ
Unidirectional Bidirectional
A
V
10
V
mA
1
V
A
V
A
10-4/ C pF
µ
°
BZW50-10
BZW50-12
BZW50-15
BZW50-18
BZW50-22
BZW50-27
BZW50-33
BZW50-39
BZW50-47
BZW50-56
BZW50-68
BZW50-82
BZW50-100
BZW50-120
BZW50-150
BZW50-180
BZW50-10B
BZW50-12B
BZW50-15B
BZW50-18B
BZW50-22B
BZW50-27B
BZW50-33B
BZW50-39B
BZW50-47B
BZW50-56B
BZW50-68B
BZW50-82B
BZW50-100B
BZW50-120B
BZW50-150B
BZW50-180B
5
11.1
13.3
16.6
20
18.8
22
266
227
186
155
127
103
85
23.4
28
2564
2143
1714
1446
1177
968
789
667
556
465
382
317
263
219
175
146
7.8
8.4
8.8
9.2
9.6
9.8
10
24000
18500
13500
11500
8500
7000
5750
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
12
1
15
1
26.9
32.2
39.4
48.3
59
35
18
1
41.5
51
22
24.4
30
1
27
1
62
33
36.6
43.3
52
1
76
39
1
69.4
83.2
99.6
121
145
179
215
269
322
72
90
10.1 4800
10.3 4100
10.4 3400
10.5 3000
10.6 2600
10.7 2300
10.8 1900
10.8 1700
10.8 1500
47
1
60.1
50
108
129
157
189
228
274
343
410
56
62.2
75.6
91
1
68
1
41
82
1
34
100
120
150
180
111
133
166
200
1
28
1
23
1
19
1
16
Fig. 1:
Peak pulse power dissipation versus initial
junction temperature(printed circuit board).
% I
PP
10
s
100
50
0
PULSE WAVEFORM 10/1000
s
t
1000
s
Note 2 : Pulse test: t < 50 ms.
p
Note 3 : ∆V
BR
=α T (T
amb
- 25)
V (25°C)
* BR
*
Note 4 :
V = 0 V, F = 1 MHz. For bidirectional types,
R
capacitance value is divided by 2.
2/5
BZW50-10,B/180,B
Fig. 2 : Peak pulse power versus exponentialpulse duration.
Ppp(W)
1E7
Tj initial = 25ø°C
1E6
1E5
1E4
1E3
1E2
tp (ms ) EXPO.
0.001
0.01
0.1
1
10
100
Fig. 3 :
Clamping voltage versus peakpulse current.
Exponentialwaveform
tp = 20 µs________
tp = 1 ms-------------
tp = 10 ms...............
Note : The curves of the figure 3 are specified for a junction temperatureof 25 °C before surge.
The given results may be extrapolatedfor other junction temperaturesby usingthe following formula :
∆VBR = αT * (Tamb -25) * VBR (25°C).
For intermediatevoltages, extrapolate the givenresults.
3/5
BZW50-10,B/180,B
Fig. 4b : Capacitance versus reverse applied
voltage for bidirectional types (typical values).
Fig. 4a :
Capacitance versus reverse applied
voltage for unidirectional types (typical values).
Fig. 6 :
Transientthermal impedance junction-am-
Fig. 5 :
Peak forward voltage drop versus peak
bient versus pulse duration (For FR4 PC Board
withL lead = 10mm).
forward current (typical values for unidirectional
types).
Note : Multiply by 2 for units with V
> 220V.
BR
Fig. 7 : Relative variation of leakage current
versus junction temperature.
4/5
BZW50-10,B/180,B
ORDER CODE
-
BZW 50
10 B
5000 W
STAND-OFF VOLTAGE
BIDIRECTIONAL
No suffix : Unidirectional
MARKING: Logo, Date Code, Type Code, Cathode Band (for unidirectionaltypes only).
PACKAGE MECHANICAL DATA
AG (Plastic)
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
REF.
B
A
B
C
L1
note 1
note 1
L1
A
B
9
0.354
20
0.787
C
8
0.315
D
1.35
1.45 0.053 0.057
1.27 0.050
L1
D
D
note 2
Note 1 : The lead is not controlled within zone L1
Note2 : Theminimum axiallengthwithin whichthedevice
canbe bentat rightanglesis 0.79”(20 mm).
Packaging : standard packaging is tape and reel.
Weight = 1.6 g.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is grantedby implication or otherwise under any patentor patentrights of SGS-THOMSON Microelectronics.Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSONMicroelectronics products are not authorized for use as criticalcomponents in life support devices or systems withoutexpress
written approval of SGS-THOMSON Microelectronics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco
The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
5/5
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