BZW50-120B [STMICROELECTRONICS]

TRANSILTM; TRANSILTM
BZW50-120B
型号: BZW50-120B
厂家: ST    ST
描述:

TRANSILTM
TRANSILTM

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中文:  中文翻译
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BZW50-10,B/180,B  
TRANSILTM  
FEATURES  
PEAK PULSE POWER : 5000 W (10/1000µs)  
STAND-OFF VOLTAGERANGE :  
From 10V to 180V  
UNI AND BIDIRECTIONAL TYPES  
LOW CLAMPING FACTOR  
FAST RESPONSE TIME  
UL RECOGNIZED  
DESCRIPTION  
AG  
Transil diodes provide high overvoltage protection  
by clamping action. Their instantaneous response  
to transient overvoltages makes them particularly  
suited to protect voltage sensitive devices such  
as MOS Technology and low voltage supplied  
IC’s.  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)  
Symbol  
PPP  
Parameter  
Peakpulse power dissipation (see note 1)  
Power dissipation on infinite heatsink  
Value  
5000  
6.5  
Unit  
W
Tj initial = Tamb  
amb = 75°C  
P
T
W
IFSM  
Non repetitive surge peak forward current  
for unidirectionaltypes  
tp = 10ms  
Tj initial = Tamb  
500  
A
Tstg  
Tj  
Storagetemperature range  
Maximum junction temperature  
- 65 to + 175  
175  
°C  
°C  
TL  
Maximum lead temperaturefor soldering during 10s at 5mm  
from case  
230  
°C  
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.  
THERMAL RESISTANCES  
Symbol  
Rth (j-l)  
Parameter  
Value  
15  
Unit  
°C/W  
°C/W  
Junction to leads  
Junction to ambient on printed circuit. Llead = 10 mm  
Rth (j-a)  
65  
January 1998 Ed : 2  
1/5  
BZW50-10,B/180,B  
ELECTRICALCHARACTERISTICS  
(Tamb = 25°C)  
I
I
F
Symbol  
VRM  
VBR  
Parameter  
Stand-off voltage  
V
V
BR  
CL  
Breakdown voltage  
Clamping voltage  
V
V
F
RM  
VCL  
V
I
I
RM  
RM  
IRM  
Leakage current @ V  
Peak pulse current  
IPP  
α
T
Voltagetemperature coefficient  
Forward voltage drop  
PP  
VF  
Types  
IRM @ VRM  
VBR  
@
IR  
VCL @ IPP  
max  
10/1000 s  
VCL @ IPP  
max  
8/20 s  
T
C
α
max  
min  
max  
typ  
note2  
note3 note4  
µ
µ
Unidirectional Bidirectional  
A
V
10  
V
mA  
1
V
A
V
A
10-4/ C pF  
µ
°
BZW50-10  
BZW50-12  
BZW50-15  
BZW50-18  
BZW50-22  
BZW50-27  
BZW50-33  
BZW50-39  
BZW50-47  
BZW50-56  
BZW50-68  
BZW50-82  
BZW50-100  
BZW50-120  
BZW50-150  
BZW50-180  
BZW50-10B  
BZW50-12B  
BZW50-15B  
BZW50-18B  
BZW50-22B  
BZW50-27B  
BZW50-33B  
BZW50-39B  
BZW50-47B  
BZW50-56B  
BZW50-68B  
BZW50-82B  
BZW50-100B  
BZW50-120B  
BZW50-150B  
BZW50-180B  
5
11.1  
13.3  
16.6  
20  
18.8  
22  
266  
227  
186  
155  
127  
103  
85  
23.4  
28  
2564  
2143  
1714  
1446  
1177  
968  
789  
667  
556  
465  
382  
317  
263  
219  
175  
146  
7.8  
8.4  
8.8  
9.2  
9.6  
9.8  
10  
24000  
18500  
13500  
11500  
8500  
7000  
5750  
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
12  
1
15  
1
26.9  
32.2  
39.4  
48.3  
59  
35  
18  
1
41.5  
51  
22  
24.4  
30  
1
27  
1
62  
33  
36.6  
43.3  
52  
1
76  
39  
1
69.4  
83.2  
99.6  
121  
145  
179  
215  
269  
322  
72  
90  
10.1 4800  
10.3 4100  
10.4 3400  
10.5 3000  
10.6 2600  
10.7 2300  
10.8 1900  
10.8 1700  
10.8 1500  
47  
1
60.1  
50  
108  
129  
157  
189  
228  
274  
343  
410  
56  
62.2  
75.6  
91  
1
68  
1
41  
82  
1
34  
100  
120  
150  
180  
111  
133  
166  
200  
1
28  
1
23  
1
19  
1
16  
Fig. 1:  
Peak pulse power dissipation versus initial  
junction temperature(printed circuit board).  
% I  
PP  
10  
s
100  
50  
0
PULSE WAVEFORM 10/1000  
s
t
1000  
s
Note 2 : Pulse test: t < 50 ms.  
p
Note 3 : V  
BR  
=α T (T  
amb  
- 25)  
V (25°C)  
* BR  
*
Note 4 :  
V = 0 V, F = 1 MHz. For bidirectional types,  
R
capacitance value is divided by 2.  
2/5  
BZW50-10,B/180,B  
Fig. 2 : Peak pulse power versus exponentialpulse duration.  
Ppp(W)  
1E7  
Tj initial = 25ø°C  
1E6  
1E5  
1E4  
1E3  
1E2  
tp (ms ) EXPO.  
0.001  
0.01  
0.1  
1
10  
100  
Fig. 3 :  
Clamping voltage versus peakpulse current.  
Exponentialwaveform  
tp = 20 µs________  
tp = 1 ms-------------  
tp = 10 ms...............  
Note : The curves of the figure 3 are specified for a junction temperatureof 25 °C before surge.  
The given results may be extrapolatedfor other junction temperaturesby usingthe following formula :  
VBR = αT * (Tamb -25) * VBR (25°C).  
For intermediatevoltages, extrapolate the givenresults.  
3/5  
BZW50-10,B/180,B  
Fig. 4b : Capacitance versus reverse applied  
voltage for bidirectional types (typical values).  
Fig. 4a :  
Capacitance versus reverse applied  
voltage for unidirectional types (typical values).  
Fig. 6 :  
Transientthermal impedance junction-am-  
Fig. 5 :  
Peak forward voltage drop versus peak  
bient versus pulse duration (For FR4 PC Board  
withL lead = 10mm).  
forward current (typical values for unidirectional  
types).  
Note : Multiply by 2 for units with V  
> 220V.  
BR  
Fig. 7 : Relative variation of leakage current  
versus junction temperature.  
4/5  
BZW50-10,B/180,B  
ORDER CODE  
-
BZW 50  
10 B  
5000 W  
STAND-OFF VOLTAGE  
BIDIRECTIONAL  
No suffix : Unidirectional  
MARKING: Logo, Date Code, Type Code, Cathode Band (for unidirectionaltypes only).  
PACKAGE MECHANICAL DATA  
AG (Plastic)  
DIMENSIONS  
Millimeters Inches  
Min. Max. Min. Max.  
REF.  
B
A
B
C
L1  
note 1  
note 1  
L1  
A
B
9
0.354  
20  
0.787  
C
8
0.315  
D
1.35  
1.45 0.053 0.057  
1.27 0.050  
L1  
D
D
note 2  
Note 1 : The lead is not controlled within zone L1  
Note2 : Theminimum axiallengthwithin whichthedevice  
canbe bentat rightanglesis 0.79(20 mm).  
Packaging : standard packaging is tape and reel.  
Weight = 1.6 g.  
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the  
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No  
license is grantedby implication or otherwise under any patentor patentrights of SGS-THOMSON Microelectronics.Specifications mentioned  
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.  
SGS-THOMSONMicroelectronics products are not authorized for use as criticalcomponents in life support devices or systems withoutexpress  
written approval of SGS-THOMSON Microelectronics.  
1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.  
SGS-THOMSON Microelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco  
The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.  
5/5  

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