D36NH02L [STMICROELECTRONICS]
N-channel 24V - 0.011ohm - 30A - DPAK STripFET III Power MOSFET; N沟道24V - 0.011ohm - 30A - DPAK封装的STripFET III功率MOSFET
| 型号： | D36NH02L |
| 厂家： | 
ST |
| 描述： | N-channel 24V - 0.011ohm - 30A - DPAK STripFET III Power MOSFET |
| 文件： | 总13页 (文件大小：767K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STD36NH02L
N-channel 24V - 0.011Ω - 30A - DPAK
STripFET™ III Power MOSFET
General features
Type
V
R
I
D
DSS
DS(on)
(1)
STD36NH02L
24V
<0.0145Ω
30A
1. Guaranteed when external Rg=4.7Ω and tf < tfmax
■ R
3
* Q industry’s benchmark
DS(on)
g
1
■ Conduction losses reduced
■ Switching losses reduced
TO-252
Description
This series of products utilizes the last advanced
design rules of ST’s proprietary STripFET™
technology. This is suitable for the most
demanding DC-DC converter application where
high efficiency is to be achieved.
Internal schematic diagram
Applications
■ Switching application
Order codes
Part number
Marking
Package
Packaging
STD36NH02L
D36NH02L
DPAK
Tape & reel
April 2006
Rev 1
1/13
www.st.com
13
Contents
STD36NH02L
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
STD36NH02L
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Parameter
Symbol
Value
Unit
(1)
V
Drain-source voltage rating
30
24
V
V
spike
V
V
Drain-Source Voltage (V = 0)
DS
GS
Gate-Source Voltage
± 20
30
V
GS
(2)
I
Drain Current (continuous) at T = 25°C
A
D
C
I
Drain Current (continuous) at T =100°C
30
A
D
C
(3)
I
Drain Current (pulsed)
120
45
A
DM
P
Total Dissipation at T = 25°C
W
TOT
C
Derating Factor
0.27
200
W/°C
mJ
(4)
E
Single pulse avalanche energy
AS
T
Operating Junction Temperature
Storage Temperature
J
-55 to 175
°C
T
stg
1. Guaranteed when external Rg=4.7Ω and tf < tfmax
2. Value limited by wire bonding
3. Pulse width limited by safe operating area.
4. Starting Tj=25°C, ID=19A, VDD=18V
Table 2.
Symbol
Thermal resistance
Parameter
Value
Unit
R
Thermal resistance junction-case Max
3.33
100
275
°C/W
°C/W
°C
thj-case
R
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering purpose
thj-amb
T
l
3/13
Electrical characteristics
STD36NH02L
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3.
Symbol
On/off states
Parameter
Test condictions
Min.
Typ.
Max. Unit
Drain-source breakdown
voltage
V
I
= 1mA, V = 0
24
V
(BR)DSS
D
GS
V
V
= 20V,
1
µA
µA
Zero gate voltage drain
DS
I
I
DSS
GSS
current (V = 0)
= 20V @125°C
10
GS
DS
GS
DS
Gate body leakage current
V
V
= ±20V
±100
2.5
nA
V
(V = 0)
DS
V
= V , I = 250µA
Gate Threshold Voltage
1
1.8
GS(th)
DS(on)
GS
D
V
V
= 10V, I = 15A
0.011 0.0145
Ω
Ω
GS
D
Static Drain-Source On
Resistance
R
= 5V, I = 15A
0.013
0.026
GS
D
Table 4.
Symbol
Dynamic
Parameter
Test condictions
Min.
Typ.
Max. Unit
(1)
V
=10V, I = 15A
Forward transconductance
18
S
g
DS
D
fs
C
Input capacitance
iss
860
255
45
pF
pF
pF
V
V
=15V, f=1 MHz,
=0
Output Capacitance
DS
C
oss
Reverse transfer
capacitance
GS
C
rss
Q
0.44V < V < 10V,
g
Total gate charge
Gate-source charge
Gate-drain charge
15.5
4.1
20
nC
nC
nC
DD
Q
Q
I = 30A, V =10V
gs
gd
D
GS
1.7
(see Figure 14)
=16V, V =0
(2)
V
Output charge
6
3
ns
Q
DS
GS
OSS
f=1 MHz Gate DC Bias = 0
Test signal level = 20mV
open drain
R
Gate input resistance
Ω
G
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Qoss = Coss*∆ VIN, Coss = Cgd+Cds
4/13
STD36NH02L
Electrical characteristics
Min Typ. Max Unit
Table 5.
Symbol
Switching times
Parameter
Test condictions
=10V, I = 15A,
t
d(on)
Turn-on delay time
Rise time
8
ns
ns
ns
ns
V
DD
D
t
70
22
15
r
R =4.7Ω, V =10V
G
GS
t
Turn-off delay time
Fall time
d(off)
(see Figure 13)
t
f
Table 6.
Symbol
Source drain diode
Parameter
Test condictions
Min Typ.
Max Unit
I
Source-drain current
30
120
1.5
A
A
V
SD
(1)
Source-drain current (pulsed)
Forward on voltage
I
SDM
(2)
I
I
= 15A, V = 0
GS
V
SD
SD
t
= 30A,di/dt = 100A/µs,
=15V, Tj=150°C
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
24
16
ns
nC
A
SD
Q
V
rr
DD
1.3
I
(see Figure 15)
RRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/13
Electrical characteristics
STD36NH02L
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
Figure 2. Thermal impedance
Figure 3. Output characterisics
Figure 4. Transfer characteristics
Figure 5. Transconductance
Figure 6. Static drain-source on resistance
6/13
STD36NH02L
Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs
vs temperature
temperature
Figure 11. Source-drain diode forward
characteristics
Figure 12. Normalized B
vs temperature
VDSS
7/13
Test circuit
STD36NH02L
3
Test circuit
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped inductive load test
circuit
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
8/13
STD36NH02L
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at:: www.st.com
9/13
Package mechanical data
STD36NH02L
DPAK MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
TYP
MAX.
MIN.
MAX.
A
A1
A2
B
2.2
0.9
2.4
1.1
0.23
0.9
5.4
0.6
0.6
6.2
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.03
0.64
5.2
b4
C
0.45
0.48
6
C2
D
D1
E
5.1
0.200
6.4
6.6
0.252
0.260
E1
e
4.7
0.185
0.090
2.28
e1
H
4.4
9.35
1
4.6
0.173
0.368
0.039
0.181
0.397
10.1
L
(L1)
L2
L4
R
2.8
0.8
0.110
0.031
0.6
0°
1
0.023
0°
0.039
8°
0.2
0.008
V2
8°
0068772-F
10/13
STD36NH02L
Packaging mechanical data
5
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
11/13
Revision history
STD36NH02L
6
Revision history
Table 7.
Date
Revision history
Revision
Changes
27-Apr-2006
1
First Release
12/13
STD36NH02L
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