DTV82 [STMICROELECTRONICS]
CRT HORIZONTAL DEFLECTION HIGH VOLTAGE DAMPER DIODE; CRT的水平偏转高压阻尼二极管型号: | DTV82 |
厂家: | ST |
描述: | CRT HORIZONTAL DEFLECTION HIGH VOLTAGE DAMPER DIODE |
文件: | 总10页 (文件大小:143K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DTVseries
®
(CRT HORIZONTAL DEFLECTION)
HIGH VOLTAGE DAMPER DIODE
MAIN PRODUCTS CHARACTERISTICS
IF(AV)
VRRM
VF
5 A to 10 A
1500 V
1.3 V to 1.5 V
A
A
K
K
FEATURES AND BENEFITS
HIGH BREAKDOWN VOLTAGE CAPABILITY
VERY FAST RECOVERY DIODE
ISOWATT220AC
DTVxxxF
TO-220AC
DTVxxxD
SPECIFIED TURN ON SWITCHING
CHARACTERISTICS
LOW STATIC AND PEAK FORWARD VOLTAGE
DROP FOR LOW DISSIPATION
DESCRIPTION
SUITED TO 32-110kHz MONITORS AND
16kHz TV DEFLECTION
High voltage diode with high current capability
dedicated to horizontal deflection. DTV16 is
optimized to TV meanwhile DTV32 to DTV110 are
covering the full range of monitors from the low
end to the professional hi-definition SXGA CAD
display units.
INSULATED VERSION (ISOWATT220AC):
Insulating voltage = 2000V DC
Capacitance = 12pF
PLANAR TECHNOLOGY ALLOWING HIGH
These devices are packaged either in TO220-AC
or in ISOWATT220AC.
QUALITY
CHARACTERISTICS
AND
BEST
ELECTRICAL
ABSOLUTE RATINGS
Symbol
Parameter
Value
1500
15
Unit
V
VRRM
IF(RMS)
IFSM
Repetitive peak reverse voltage
RMS forward current
A
Surge non repetitive forward current
tp = 10ms half sine wave
DTV16
DTV32
DTV56
DTV64
DTV82
DTV110
50
A
75
80
80
80
80
Tstg
Tj
Storage temperature range
-65 to 150
150
°C
°C
Maximum operating junction temperature
1/10
August 1999 - Ed: 2B
DTVseries
THERMAL RESISTANCES
Value
Symbol
Parameter
Unit
TO-220AC
ISOWATT220AC
Rth(j-c)
Junction to case thermal
resistance
DTV16
DTV32
DTV56
DTV64
DTV82
DTV110
3
5.5
4.75
4
°C/W
2.5
2
1.8
1.6
1.3
4
3.7
3.5
STATIC ELECTRICAL CHARACTERISTICS
Value
Symbol
Test Conditions
Tj = 25°C
Tj = 125°C
Unit
Typ
Max
Typ
1.0
Max
1.5
VF
IF = 5 A
IF = 6 A
IF = 6 A
IF = 6 A
IF = 6 A
IF = 10 A
VR = VRRM
DTV16
DTV32
DTV56
DTV64
DTV82
DTV110
DTV16
DTV32
DTV56
DTV64
DTV82
DTV110
1.6
1.5
1.8
1.7
1.8
2.3
60
V
*
1.1
1.1
1.35
1.5
1.1
1.4
1.0
1.3
1.15
100
100
100
100
100
100
1.5
IR
500
µA
**
100
100
100
100
100
1000
1000
1000
1000
1000
pulse test : * tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%
2/10
DTVseries
RECOVERY CHARACTERISTICS
Symbol
Test Conditions
Tj = 25°C
Typ
1500
850
750
750
675
625
200
130
110
110
105
95
Max
Unit
trr
IF = 100m A
IR = 100mA
DTV16
DTV32
DTV56
DTV64
DTV82
DTV110
DTV16
DTV32
DTV56
DTV64
DTV82
DTV110
ns
I
RR = 10mA
trr
IF = 1 A
Tj = 25°C
300
175
135
135
125
115
ns
dIF/dt =-50A/µs
VR =30V
TURN-ON SWITCHING CHARACTERISTICS
Symbol
Test Conditions
Typ
350
570
350
350
270
250
25
Max
Unit
tfr
IF = 6 A
dIF/dt = 80 A/µs
Tj = 100°C
DTV16
DTV32
DTV56
DTV64
DTV82
DTV110
DTV16
DTV32
DTV56
DTV64
DTV82
DTV110
ns
VFR =3V
VFP
IF = 6A
dIF/dt = 80 A/µs
Tj = 100°C
34
28
26
22
18
14
V
21
19
18
14
11
To evaluate the maximum conduction losses use the following equation :
2
DTV16
DTV32
DTV56
DTV64
DTV82
DTV110
P= 1.14 x I
+ 0.072 x I
F(AV)
F (RMS)
2
P= 1.069 x I
+ 0.047 x I
F(AV)
F (RMS)
2
P= 1.15 x I
P= 1.06 x I
P= 1.01 x I
P= 1.12 x I
+ 0.059 x I
+ 0.053 x I
+ 0.048 x I
+ 0.038 x I
F(AV)
F(AV)
F(AV)
F(AV)
F (RMS)
2
F (RMS)
2
F (RMS)
2
F (RMS)
3/10
DTVseries
Fig. 1-1: Power dissipation versus peak forward
current (triangular waveform, δ=0.45).
Fig. 1-2: Power dissipation versus peak forward
current (triangular waveform, δ=0.45).
PF(av)(W)
PF(av)(W)
2.0
3.5
3.0
2.5
1.5
DTV110
DTV32
2.0
1.5
1.0
0.5
0.0
DTV56
DTV16
1.0
0.5
0.0
Ip(A)
Ip(A)
0
2
4
6
8
10
0
1
2
3
4
5
6
Fig. 1-3: Power dissipation versus peak forward
current (triangular waveform, δ=0.45).
PF(av)(W)
2.0
1.5
DTV82
1.0
DTV64
0.5
Ip(A)
0.0
0
1
2
3
4
5
6
Fig. 2-1: Average current versus case temperature
(δ=0.5) (TO-220AC).
Fig. 2-2: Average current versus case temperature
(δ=0.5) (ISOWATT220AC).
IF(av)(A)
IF(av)(A)
12
12
10
10
DTV110
DTV110
DTV32
DTV64
DTV82
DTV82
DTV56
8
8
DTV56
DTV64
DTV32
6
6
DTV16
DTV16
4
4
T
T
2
2
Tcase(°C)
tp
=tp/T
tp
δ
=tp/T
δ
Tcase(°C)
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
4/10
DTVseries
Fig. 3-1: Forward voltage drop versus forward
current (DTV16D/F).
Fig. 3-2: Forward voltage drop versus forward
current (DTV32D/F).
IFM(A)
IFM(A)
20.0
20.0
10.0
10.0
Typical
Tj=125°C
Typical
Tj=125°C
Maximum
Tj=125°C
Maximum
Tj=125°C
Maximum
Tj=25°C
Maximum
Tj=25°C
1.0
1.0
VFM(V)
VFM(V)
0.1
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Fig. 3-3: Forward voltage drop versus forward
current (DTV56D/F).
Fig. 3-4: Forward voltage drop versus forward
current (DTV64D/F).
IFM(A)
IFM(A)
20.0
20.0
Typical
Tj=125°C
10.0
10.0
Typical
Tj=125°C
Maximum
Tj=125°C
Maximum
Tj=125°C
Maximum
Tj=25°C
Maximum
Tj=25°C
1.0
1.0
VFM(A)
VFM(V)
0.1
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Fig. 3-5: Forward voltage drop versus forward
current (DTV82D/F).
Fig. 3-6: Forward voltage drop versus forward
current (DTV110D/F).
IFM(A)
IFM(A)
20.0
20.0
Typical
Tj=125°C
Typical
Tj=125°C
10.0
10.0
Maximum
Tj=125°C
Maximum
Tj=125°C
Maximum
Tj=25°C
Maximum
Tj=25°C
1.0
1.0
VFM(V)
VFM(V)
0.1
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
0
0.5
1
1.5
2
2.5
3
5/10
DTVseries
Fig. 4-1: Non repetitive surge peak forward current
versus overload duration (TO-220AC)
(DTV16D / DTV32D / DTV56D).
Fig. 4-2: Non repetitive surge peak forward current
versus overload duration (ISOWATT220AC)
(DTV16F / DTV32F / DTV56F).
IM(A)
IM(A)
60
45
55
50
45
Tc=100°C
Tc=100°C
40
DTV32F & DTV56F
DTV32D & DTV56D
35
40
35
30
25
20
15
10
5
30
25
DTV16F
DTV16D
20
15
IM
IM
10
5
t
t
δ
=0.5
δ
=0.5
t(s)
t(s)
0
0
1E-3
1E-2
1E-1
1E+0
1E-3
1E-2
1E-1
1E+0
Fig. 4-3: Non repetitive surge peak forward current
versus overload duration (TO-220AC)
(DTV64D / DTV82D / DTV110D).
Fig. 4-4: Non repetitive surge peak forward current
versus overload duration (ISOWATT220AC)
(DTV64F / DTV82F / DTV110F).
IM(A)
IM(A)
100
60
55
50
45
40
35
Tc=100°C
90
Tc=100°C
DTV110F
DTV110D
80
DTV82F
DTV82D
70
60
50
30
DTV64D
DTV64F
25
20
15
10
5
40
30
IM
IM
20
10
0
t
t
δ
=0.5
δ
=0.5
t(s)
t(s)
0
1E-3
1E-2
1E-1
1E+0
1E-3
1E-2
1E-1
1E+0
Fig. 5.1: Reverse recovery charges versus dIF/dt
(DTV16D/F).
Fig. 5.2: Reverse recovery charges versus dIF/dt.
Qrr(µC)
Qrr(nc)
1200
2.4
2.2
2.0
IF=Ip
90% confidence
Tj=125°C
DTV32
IF=Ip
1000
90% confidence
Tj=125°C
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
800
DTV64
DTV82
600
400
200
dIF/dt(A/µs)
dIF/dt(A/µs)
0.2
0
0.0
0.1
0.2
0.5
1
2
5
0.1
0.2
0.5
1.0
2.0
5.0
6/10
DTVseries
Fig. 5.3: Reverse recovery charges versus dIF/dt.
Fig. 6.1: Reverse recovery current versus dIF/dt.
Qrr(nc)
IRM(A)
1200
3.0
IF=Ip
90% confidence
Tj=125°C
2.7
IF=Ip
1000
90% confidence
2.4
DTV56
Tj=125°C
2.1
800
1.8
1.5
1.2
0.9
0.6
0.3
0.0
DTV16
DTV110
600
DTV32
400
200
dIF/dt(A/µs)
dIF/dt(A/µs)
0
0.1
0.2
0.5
1
2
5
0.1
0.2
0.5
1
2
5
Fig. 6.2: Reverse recovery current versus dIF/dt.
Fig. 6.3: Reverse recovery current versus dIF/dt.
IRM(A)
IRM(A)
2.2
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IF=Ip
90% confidence
Tj=125°C
IF=Ip
90% confidence
Tj=125°C
DTV56
DTV64
DTV110
DTV82
0.2
0.0
dIF/dt(A/µs)
dIF/dt(A/µs)
0.1
0.2
0.5
1
2
5
0.1
0.2
0.5
1
2
5
Fig. 7-1: Transient peak forward voltage versus
dIF/dt.
Fig. 7.2: Transient peak forward voltage versus
dIF/dt.
VFP(V)
VFP(V)
45
30
IF=Ip
90% confidence
Tj=125°C
IF=Ip
90% confidence
Tj=125°C
40
DTV16
25
DTV64
35
DTV32
30
20
DTV82
25
DTV56
15
20
15
10
DTV110
10
5
5
dIF/dt(A/µs)
dIF/dt(A/µs)
0
0
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
7/10
DTVseries
Fig. 8.1: Forward recovery time versus dIF/dt.
Fig. 8-2: Forward recovery time versus dIF/dt.
tfr(ns)
tfr(ns)
700
800
IF=Ip
IF=Ip
90% confidence
Tj=125°C
90% confidence
Tj=125°C
650
750
600
700
550
650
600
550
500
450
400
DTV32
500
DTV56
450
400
350
300
DTV82
DTV64
DTV16
DTV110
dIF/dt(A/µs)
dIF/dt(A/µs)
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
Fig. 9: Dynamic parameters versus junction
temperature.
Fig. 10: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
VFP,IRM,Qrr[Tj]/VFP,IRM,Qrr[Tj=125°C]
200
1.2
DTV110
Tj=25°C
F=1MHz
100
10
DTV82
DTV64
1.0
0.8
VFP
DTV16
0.6
IRM
0.4
DTV32
DTV56
Qrr
0.2
Tj(°C)
VR(V)
10
0.0
1
1
0
20
40
60
80
100
120
140
100 200
Fig. 11-1: Relative variation of thermal impedance
junction to case versus pulse duration
(ISOWATT220AC).
Fig. 12-2: Relative variation of thermal impedance
junction to case versus pulse duration
(TO-220AC).
K=[Zth(j-c)/Rth(j-c)]
K=[Zth(j-c)/Rth(j-c)]
1.0
1.0
δ = 0.5
δ = 0.5
0.5
0.5
δ = 0.2
δ = 0.2
δ = 0.1
δ = 0.1
T
T
0.2
0.2
0.1
Single pulse
Single pulse
tp
tp(s)
=tp/T
δ
tp(s)
tp
=tp/T
δ
0.1
1E-3
1E-2
1E-1
1E+0
1E-2
1E-1
1E+0
1E+1
8/10
DTVseries
PACKAGE DATA
TO-220AC (plastic) (JEDEC outline)
DIMENSIONS
Millimeters Inches
REF.
Min.
Max.
4.60
1.32
2.72
0.70
0.88
1.70
5.15
10.40
Min.
Max.
0.181
0.051
0.107
0.027
0.034
0.066
0.202
0.409
H2
A
A
C
4.40
1.23
2.40
0.49
0.61
1.14
4.95
10.00
0.173
0.048
0.094
0.019
0.024
0.044
0.194
0.393
C
L5
L7
D
Ø I
E
L6
F
L2
F1
G
D
L9
H2
L2
L4
L5
L6
L7
L9
M
F1
L4
16.40 typ.
0.645 typ.
13.00
2.65
14.00
2.95
0.511
0.104
0.600
0.244
0.137
0.551
0.116
0.620
0.259
0.154
M
F
E
G
15.25
6.20
15.75
6.60
3.50
3.93
2.6 typ.
0.102 typ.
Diam. I
3.75
3.85
0.147
0.151
Cooling method : c.
Torque value : 0.55 m.N typ (0.70 m.N max).
9/10
DTVseries
PACKAGE DATA
ISOWATT220AC (plastic)
A
DIMENSIONS
Millimeters
Min. Typ. Max. Min. Typ. Max.
H
B
REF.
Inches
A
B
4.40
2.50
2.40
0.40
0.75
1.15
4.95
10.00
4.60 0.173
2.70 0.098
2.75 0.094
0.70 0.016
1.00 0.030
1.70 0.045
5.20 0.195
10.40 0.394
0.181
0.106
0.108
0.028
0.039
0.067
0.205
0.409
L6
D
L7
L2
E
L3
F
F1
G
H
F1
L2
16.00
0.630
L3 28.60
L6 15.90
30.60 1.125
16.40 0.626
9.30 0.354
3.20 0.118
1.205
0.646
0.366
0.126
F
D
E
L7
9.00
G
Diam 3.00
Cooling method : C.
Electrical isolation : 2000V DC
Capacitance : 12 pF
Torque value : 0.55 m.N typ (0.70 m.N max).
Ordering code
Marking
Package
Weight
Base qty
Delivery mode
DTV16D
DTV32D
DTV56D
DTV64D
DTV82D
DTV110D
DTV16D
DTV32D
DTV56D
DTV64D
DTV82D
DTV110D
TO-220AC
1.86g
50
Tube
DTV16F
DTV32F
DTV56F
DTV64F
DTV82F
DTV110F
DTV16F
DTV32F
DTV56F
DTV64F
DTV82F
DTV110F
ISOWATT220AC
2g
50
Tube
Epoxy meets UL94, V0
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
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