HCC4041UB [STMICROELECTRONICS]

QUAD TRUE/COMPLEMENT BUFFER; QUAD TRUE /补BUFFER
HCC4041UB
型号: HCC4041UB
厂家: ST    ST
描述:

QUAD TRUE/COMPLEMENT BUFFER
QUAD TRUE /补BUFFER

文件: 总12页 (文件大小:297K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HCC/HCF4041UB  
QUAD TRUE/COMPLEMENT BUFFER  
.
BALANCED SINK AND SOURCE CURRENT ;  
APPROXIMATELY 4 TIMES STANDARD ”B”  
DRIVE  
EQUALIZED DELAY TO TRUE AND COMPLE-  
MENT OUTPUTS  
QUIESCENT CURRENT SPECIFIED TO 20V  
FOR HCC DEVICE  
5V, 10V AND 15V PARAMETRIC RATINGS  
INPUT CURRENT OF 100nA AT 18V AND 25°C  
FOR HCC DEVICE  
100 % TESTED FOR QUIESCENT CURRENT  
MEETS ALLREQUIREMENTS OF JEDECTEN-  
TATIVESTANDARDN°13A, ”STANDARD SPE-  
CIFICATIONS FOR DESCRIPTION OF ”B”  
SERIES CMOS DEVICES”  
.
.
EY  
F
(Plastic Package)  
(Ceramic Frit Seal Package)  
.
.
.
.
C1  
M1  
(Plastic Chip Carrier)  
(Micro Package)  
ORDER CODES :  
HCC4041BF  
HCF4041BM1  
HCF4041BEY  
HCF4041BC1  
PIN CONNECTIONS  
DESCRIPTION  
The HCC4041UB (extended temperature range)  
and HCF4041UB (intermediate temperature range)  
are monolithic integrated circuits, available in 14-  
lead dual in-line plastic or ceramic package and  
plastic micro package.  
TheHCC/HCF4041UB types arequad true/comple-  
ment buffers consisting of n- and p-channel units  
having low channel resistance and high current  
(sourcing and sinking) capability. The HCC/-  
HCF4041UB is intended for use as a buffer, line  
driver, or COS/MOS-to-TTL driver. It can be used as  
an ultra-low power resistor-network driver for A/D  
and D/A conversion, as a transmission-line driver,  
and in other applications where high noise immunity  
and low-power dissipation are primary design re-  
quirements.  
June 1989  
1/12  
HCC/HCF4041UB  
FUNCTIONAL DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
VDD  
*
Supply Voltage : HCC Types  
HCF Types  
– 0.5 to + 20  
– 0.5 to + 18  
V
V
Vi  
II  
Input Voltage  
– 0.5 to VDD + 0.5  
V
DC Input Current (any one input)  
± 10  
mA  
mW  
Pt ot  
Total Power Dissipation (per package)  
Dissipation per Output Transistor  
200  
for Top = Full Package-temperature Range  
100  
mW  
To p  
Tstg  
Operating Temperature : HCC Types  
HCF Types  
– 55 to + 125  
– 40 to + 85  
°C  
°C  
Storage Temperature  
– 65 to + 150  
°C  
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress  
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections  
of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability.  
* All voltage values are referred to VSS pin voltage.  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Supply Voltage : HCC Types  
HCF Types  
Value  
Unit  
VDD  
3 to + 18  
3 to + 15  
V
V
VI  
Input Voltage  
0 to VDD  
V
To p  
Operating Temperature : HCC Types  
HCF Types  
– 55 to + 125  
– 40 to + 85  
°C  
°C  
2/12  
HCC/HCF4041UB  
SCHEMATIC DIAGRAM  
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)  
Test Conditions  
Value  
Symbol  
Parameter  
Unit  
VI  
VO  
|IO  
|
VD D  
T Lo w  
*
25°C  
T High*  
(V)  
(V)  
(µA) (V)  
Min. Max. Min. Typ. Max. Min. Max.  
IL  
Quiescent  
Current  
0/ 5  
0/10  
0/15  
0/20  
0/ 5  
0/10  
0/15  
0/ 5  
0/10  
0/15  
5/0  
5
1
2
0.02  
0.02  
0.02  
0.04  
0.02  
0.02  
0.02  
1
2
30  
60  
10  
15  
20  
5
HCC  
Types  
4
4
120  
600  
30  
µA  
20  
4
20  
4
HCF  
Types  
10  
15  
8
8
60  
16  
16  
120  
VOH  
VOL  
VIH  
Output High  
Voltage  
< 1  
< 1  
< 1  
< 1  
< 1  
< 1  
5
4.95  
4.95  
9.95  
4.95  
9.95  
V
V
V
10 9.95  
15 14.95  
14.95  
14.95  
Output Low  
Voltage  
5
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
10/0  
15/0  
10  
15  
Input High  
Voltage  
0.5/4.5 < 1  
1/9 < 1  
1.5/13.5 < 1  
5
4
8
4
8
4
8
10  
15 12.5  
12.5  
12.5  
* TLow = – 55°C for HCC device : – 40°C for HCF device.  
* THigh = + 125°C for HCC device : + 85°C for HCF device.  
The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5V min. with VDD = 15V.  
3/12  
HCC/HCF4041UB  
STATIC ELECTRICAL CHARACTERISTICS (continued)  
Test Conditions  
Value  
Symbol  
Parameter  
Unit  
VI  
VO  
|IO  
|
VD D  
T Lo w  
*
25°C  
T High*  
(V)  
(V)  
(µA) (V)  
Min. Max. Min. Typ. Max. Min. Max.  
VIL  
Input Low  
Voltage  
4.5/0.5 < 1  
9/1 < 1  
5
10  
15  
5
1
2
1
2
1
2
V
13.5/1.5 < 1  
2.5  
2.5  
2.5  
IOH  
Output  
Drive  
Current  
0/ 5  
0/ 5  
0/10  
0/15  
0/ 5  
0/ 5  
0/10  
0/15  
0/ 5  
0/10  
0/15  
0/ 5  
0/10  
0/15  
2.5  
4.6  
9.5  
13.5  
2.5  
4.6  
9.5  
13.5  
0.4  
0.5  
1.5  
0.4  
0.5  
1.5  
– 8.4  
– 2.1  
– 6.4 – 12.8  
– 1.6 – 3.2  
– 5 – 10  
– 4.6  
– 1.2  
– 3.5  
– 13  
– 4.08  
– 1.02  
– 3.18  
–12.11  
1.2  
5
HCC  
Types  
10 – 6.25  
15 – 24  
– 19 – 38  
– 5.44 – 12.8  
– 1.36 – 3.2  
– 4.25 – 10  
–16.15 – 38  
mA  
5
5
– 6.8  
– 1.7  
HCF  
Types  
10 – 5.31  
15 –20.18  
IOL  
Output  
Sink  
Current  
5
2.1  
1.6  
5
3.2  
10  
38  
HCC  
Types  
10 6.25  
3.5  
15  
5
24  
19  
13  
1.7  
1.36 3.2  
4.25 10  
16.15 38  
1.02  
HCF  
Types  
10 5.31  
3.18  
15 20.18  
12.11  
I
IH, IIL  
Input  
leakage  
Current  
HCC  
Types  
0/18  
18  
± 0.1  
± 0.3  
±105 ± 0.1  
± 1  
± 1  
Any Input  
Any Input  
µA  
HCF 0/15  
Types  
15  
±105 ± 0.3  
CI  
Input Capacitance  
15  
22.5  
pF  
* TLow = – 55°C for HCC device : – 40°C for HCF device.  
* THigh = + 125°C for HCC device : + 85°C for HCF device.  
The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5V min. with VDD = 15V.  
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200k,  
typical temperature coefficient for all VDD values is 0.3 %/°C, all input rise and fall times = 20ns)  
Test Conditions  
Value  
Symbol  
Parameter  
Unit  
V DD (V) Min. Typ. Max.  
tPLH, tPHL Propagation Delay Time  
5
60  
35  
25  
40  
20  
15  
120  
70  
50  
80  
40  
30  
ns  
10  
15  
5
t
THL, tTL H Transition Time  
ns  
10  
15  
4/12  
HCC/HCF4041UB  
Minimum Output High (source) Current Charac-  
teristics.  
Typical Output Low (sink) Current.  
Minimum Output Low (sink) Current Charac-  
teristics.  
Typical Output High (source) Current Charac-  
teristics.  
Typical Transition Time vs. Load Capacitance.  
Typical Propagation Delay Time vs. Load Capacit-  
ance.  
5/12  
HCC/HCF4041UB  
Minimum and Maximum Transfer Characteristics-true Output-and Test Circuit.  
Minimum Maximum Transfer Characteristics Complement Output-and Test Circuit.  
Typical Power Dissipation vs. Input Rise and Fall  
Time per Output Pair.  
Typical Power Dissipation vs. Frequency per Out-  
put Pair.  
6/12  
HCC/HCF4041UB  
TEST CIRCUITS  
Quiescent Device Current.  
Noise Immunity.  
Input Leakage Current.  
7/12  
HCC/HCF4041UB  
Plastic DIP14 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
TYP.  
MAX.  
MIN.  
0.020  
0.055  
MAX.  
a1  
B
b
0.51  
1.39  
1.65  
0.065  
0.5  
0.020  
0.010  
b1  
D
E
e
0.25  
20  
0.787  
8.5  
2.54  
15.24  
0.335  
0.100  
0.600  
e3  
F
7.1  
5.1  
0.280  
0.201  
I
L
3.3  
0.130  
Z
1.27  
2.54  
0.050  
0.100  
P001A  
8/12  
HCC/HCF4041UB  
Ceramic DIP14/1 MECHANICAL DATA  
mm  
inch  
DIM.  
MIN.  
TYP.  
MAX.  
20  
MIN.  
TYP.  
MAX.  
0.787  
0.276  
A
B
7.0  
D
E
3.3  
0.130  
0.600  
0.38  
0.015  
e3  
F
15.24  
2.29  
0.4  
2.79  
0.55  
1.52  
0.31  
2.54  
10.3  
8.05  
5.08  
0.090  
0.016  
0.046  
0.009  
0.060  
0.110  
0.022  
0.060  
0.012  
0.100  
0.406  
0.317  
0.200  
G
H
L
1.17  
0.22  
1.52  
M
N
P
7.8  
0.307  
Q
P053C  
9/12  
HCC/HCF4041UB  
SO14 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
TYP.  
MAX.  
1.75  
0.2  
MIN.  
MAX.  
0.068  
0.007  
0.064  
0.018  
0.010  
A
a1  
a2  
b
0.1  
0.003  
1.65  
0.46  
0.25  
0.35  
0.19  
0.013  
0.007  
b1  
C
0.5  
0.019  
c1  
D
45° (typ.)  
8.55  
5.8  
8.75  
6.2  
0.336  
0.228  
0.344  
0.244  
E
e
1.27  
7.62  
0.050  
0.300  
e3  
F
3.8  
4.6  
0.5  
4.0  
5.3  
0.149  
0.181  
0.019  
0.157  
0.208  
0.050  
0.026  
G
L
1.27  
0.68  
M
S
8° (max.)  
P013G  
10/12  
HCC/HCF4041UB  
PLCC20 MECHANICAL DATA  
mm  
inch  
DIM.  
MIN.  
9.78  
8.89  
4.2  
TYP.  
MAX.  
10.03  
9.04  
MIN.  
0.385  
0.350  
0.165  
TYP.  
MAX.  
0.395  
0.356  
0.180  
A
B
D
4.57  
d1  
d2  
E
2.54  
0.56  
0.100  
0.022  
7.37  
8.38  
0.290  
0.330  
0.004  
e
1.27  
5.08  
0.38  
0.050  
0.200  
0.015  
e3  
F
G
0.101  
M
M1  
1.27  
1.14  
0.050  
0.045  
P027A  
11/12  
HCC/HCF4041UB  
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the  
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No  
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned  
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.  
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsin life support devices or systems without express  
written approval of SGS-THOMSON Microelectonics.  
1994 SGS-THOMSON Microelectronics - All Rights Reserved  
SGS-THOMSON Microelectronics GROUP OF COMPANIES  
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -  
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A  
12/12  

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