HCF4030BC1 [STMICROELECTRONICS]
QUAD EXCLUSIVE-OR GATE; 四异或门HCC/HCF4030B
QUAD EXCLUSIVE-OR GATE
.
.
.
.
MEDIUM-SPEED OPERATION – tPHL = tPLH
60ns (typ.) @ CL = 50pF and VDD – VSS = 10V
LOW OUTPUT IMPEDANCE : 500Ω (typ.) @
VDD – VSS = 10V
QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
5V, 10V, AND 15V PARAMETRIC RATINGS
INPUT CURRENT OF 100nA AT 18V AND 25°C
FOR HCC DEVICE
100% TESTED FOR QUIESCENT CURRENT
MEETS ALLREQUIREMENTS OF JEDECTEN-
TATIVESTANDARDN°13A, ”STANDARD SPE-
CIFICATIONS FOR DESCRIPTION OF ”B”
SERIES CMOS DEVICES”
=
EY
F
(Plastic Package)
(Ceramic Frit Seal Package)
.
.
.
.
C1
M1
(Plastic Chip Carrier)
(Micro Package)
ORDER CODES :
HCC4030BF
HCF4030BM1
HCF4030BEY
HCF4030BC1
PIN CONNECTIONS
DESCRIPTION
The HCC4030B (extended temperature range) and
HCF4030B (intermediate temperature range) are
monolithic integrated circuit, available in 14-lead
dual in-line plastic or ceramic package and plastic
micro package.
The HCC/HCF4030B types consist of four inde-
pendent exclusive-OR gates integrated on a single
monolithic silicon chip. Each exclusive-OR gate con-
sists of four n-channel and four p-channel enhance-
ment-type transistors. All inputs and outputs are
protected against electrostatic effects.
November 1996
1/12
HCC/HCF4030B
FUNCTIONAL DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDD
*
Supply Voltage : HCC Types
HCF Types
– 0.5 to + 20
– 0.5 to + 18
V
V
Vi
II
Input Voltage
– 0.5 to VDD + 0.5
V
DC Input Current (any one input)
± 10
mA
mW
Ptot
Total Power Dissipation (per package)
Dissipation per Output Transistor
200
for Top = Full Package-temperature Range
100
mW
Top
Operating Temperature : HCC Types
HCF Types
– 55 to + 125
– 40 to + 85
°C
°C
Tstg
Storage Temperature
– 65 to + 150
°C
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sec-
tions of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device
reliability.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Supply Voltage : HCC Types
HCF Types
Value
Unit
VDD
3 to 18
3 to 15
V
V
VI
Input Voltage
0 to VDD
V
To p
Operating Temperature : HCC Types
HCF Types
– 55 to + 125
– 40 to + 85
°C
°C
TRUTH TABLE
One of Four Identical Gates
A
B
J
0
1
0
1
0
0
1
0
0
1
1
0
Where ”1” = High level
”0” = Low level.
2/12
HCC/HCF4030B
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)
Test Conditions
Value
Symbol
Parameter
Unit
VI
VO
|IO
|
VD D
T Lo w
*
25°C
T High*
(V)
(V)
(µA) (V)
Min. Max. Min. Typ. Max. Min. Max.
IL
Quiescent
Current
0/ 5
0/10
0/15
0/20
0/ 5
0/10
0/15
0/ 5
0/10
0/15
5/0
5
1
2
0.02
0.02
0.02
0.04
0.02
0.02
0.02
1
2
30
60
10
15
20
5
HCC
Types
4
4
120
600
30
µA
20
4
20
4
HCF
Types
10
15
8
8
60
16
16
120
VOH
VOL
VIH
VIL
Output High
Voltage
< 1
< 1
< 1
< 1
< 1
< 1
5
4.95
4.95
9.95
4.95
9.95
V
V
V
V
10 9.95
15 14.95
14.95
14.95
Output Low
Voltage
5
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
10/0
15/0
10
15
Input High
Voltage
0.5/4.5 < 1
1/9 < 1
5
10
15
5
3.5
7
3.5
7
3.5
7
1.5/13.5 < 1
4.5/0.5 < 1
11
11
11
Input Low
Voltage
1.5
3
1.5
3
1.5
3
9/1
< 1
10
15
5
13.5/1.5 < 1
4
4
4
IOH
Output
Drive
Current
0/ 5
0/ 5
0/10
0/15
0/ 5
0/ 5
0/10
0/15
0/ 5
0/10
0/15
0/ 5
0/10
0/15
2.5
4.6
9.5
13.5
2.5
4.6
9.5
13.5
0.4
0.5
1.5
0.4
0.5
1.5
– 2
– 1.6 – 3.2
– 0.51 – 1
– 1.3 – 2.6
– 3.4 – 6.8
– 1.36 – 3.2
– 0.44 – 1
– 1.1 – 2.6
– 3.0 – 6.8
– 1.15
– 0.36
– 0.9
– 2.4
– 1.1
– 0.36
– 0.9
– 2.4
0.36
5
– 0.64
HCC
Types
10 – 1.6
15 – 4.2
mA
5
5
– 1.53
– 0.52
HCF
Types
10 – 1.3
15 – 3.6
IOL
Output
Sink
Current
5
0.64
1.6
0.51
1.3
1
HCC
Types
10
15
5
2.6
6.8
1
0.9
4.2
3.4
2.4
mA
0.52
1.3
0.44
1.1
0.36
HCF
Types
10
15
2.6
6.8
0.9
3.6
3.0
2.4
I
IH, IIL Input
HCC
Types
0/18
0/15
± 0.1
± 0.3
±10–5 ± 0.1
± 1
± 1
18
15
Leakage
Current
Any Input
Any Input
µA
HCF
Types
±10–5 ± 0.3
CI
Input Capacitance
5
7.5
pF
*
*
TLow = – 55°C for HCC device : – 40°C for HCF device.
THigh = + 125°C for HCC device : + 85°C for HCF device.
The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5 V min. with VDD = 15V.
3/12
HCC/HCF4030B
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200kΩ,
typical temperature coefficient for all VDD = 0.3%/°C values, all input rise and fall time = 20ns)
Test Conditions
Value
Symbol
Parameter
Unit
VC C (V) Min. Typ. Max.
t
PLH, tPHL Propagation Delay Time
TLH, tTHL Transition Time
5
140
65
280
130
100
200
100
80
ns
10
15
5
50
t
100
50
ns
10
15
40
Typical Output Low (sink) Current Characteristics.
Minimum Output Low (sink) Current Charac-
teristics.
Typical Output High (source) Current Charac-
teristics.
Minimum Output High (source) Current Charac-
teristics.
4/12
HCC/HCF4030B
TYPICAL APPLICATIONS
EVEN-PARITY-BIT GENERATOR
(1-3/4 x HCC/HCF4030B).
EVEN-PARITY-CHECKER
(2 x HCC/HCF4030B).
ODD-PARITY-BIT GENERATOR
ODD-PARITY CHECKER
(2 x HCC/HCF4030B).
(2 x HCC/HCF4030B).
5/12
HCC/HCF4030B
TYPICAL APPLICATIONS (continued)
8-BIT COMPARATOR
8-BIT TWO’S COMPLEMENT ADDER-SUBSTRACTOR
6/12
HCC/HCF4030B
Table 1 : Two’s Complement Numbers and Their Equivalent Decimal Values.
X8 X7 X6 X5 X4 X3 X2 X1
X8 X7 X6 X5 X4 X3 X2 X1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
0
1
0
1
=
=
=
=
0
1
2
3
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
1
1
0
0
1
1
0
1
0
1
=
=
=
=
=
-1
-2
-3
-4
-5
0
0
1
1
1
1
1
1
1
1
1
1
1
1
0
1
=
=
126
127
1
1
0
0
0
0
0
0
0
0
0
0
0
0
1
0
=
=
-127
-128
The two’s complement adder-substractor can add or substract any two of the numbers in table 1. For exam-
ple :
a) 2
+ =
SIGN
BIT
0
SIGN
BIT
1
b) –2
– = X
–5 X
Y
0
1
0
1
0
1
0
1
0
0
1
1
0
1
0
2 +
–5 +
1
1
0
1
1
0
1
1
0
1
1
0
1
0
1
1
1
0
0
1
0
1
1
–2 +
–5
1
–5
Y
Y
1
0
CI
+
S 0 1
CO
1
1
1
1
1
0
1 = –3
CL
S 1 0
CO
0
0
0
0
0
1
= 3
TEST CIRCUITS
Quiescent Device Current.
Input Voltage.
Input Leakage Current.
7/12
HCC/HCF4030B
Plastic DIP14 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
0.51
1.39
TYP.
MAX.
MIN.
0.020
0.055
MAX.
a1
B
b
1.65
0.065
0.5
0.020
0.010
b1
D
E
e
0.25
20
0.787
8.5
2.54
15.24
0.335
0.100
0.600
e3
F
7.1
5.1
0.280
0.201
I
L
3.3
0.130
Z
1.27
2.54
0.050
0.100
P001A
8/12
HCC/HCF4030B
Ceramic DIP14/1 MECHANICAL DATA
mm
inch
DIM.
MIN.
TYP.
MAX.
20
MIN.
TYP.
MAX.
0.787
0.276
A
B
7.0
D
E
3.3
0.130
0.600
0.38
0.015
e3
F
15.24
2.29
0.4
2.79
0.55
1.52
0.31
2.54
10.3
8.05
5.08
0.090
0.016
0.046
0.009
0.060
0.110
0.022
0.060
0.012
0.100
0.406
0.317
0.200
G
H
L
1.17
0.22
1.52
M
N
P
7.8
0.307
Q
P053C
9/12
HCC/HCF4030B
SO14 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
1.75
0.2
MIN.
MAX.
0.068
0.007
0.064
0.018
0.010
A
a1
a2
b
0.1
0.003
1.65
0.46
0.25
0.35
0.19
0.013
0.007
b1
C
0.5
0.019
c1
D
45° (typ.)
8.55
5.8
8.75
6.2
0.336
0.228
0.344
0.244
E
e
1.27
7.62
0.050
0.300
e3
F
3.8
4.6
0.5
4.0
5.3
0.149
0.181
0.019
0.157
0.208
0.050
0.026
G
L
1.27
0.68
M
S
8° (max.)
P013G
10/12
HCC/HCF4030B
PLCC20 MECHANICAL DATA
mm
inch
DIM.
MIN.
9.78
8.89
4.2
TYP.
MAX.
10.03
9.04
MIN.
0.385
0.350
0.165
TYP.
MAX.
0.395
0.356
0.180
A
B
D
4.57
d1
d2
E
2.54
0.56
0.100
0.022
7.37
8.38
0.290
0.330
0.004
e
1.27
5.08
0.38
0.050
0.200
0.015
e3
F
G
0.101
M
M1
1.27
1.14
0.050
0.045
P027A
11/12
HCC/HCF4030B
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in lifesupport devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSONMicroelectronics GROUP OF COMPANIES
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.
12/12
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