ITA25C1 [STMICROELECTRONICS]

MONOLITHICTRANSIL ARRAY FOR DATA LINE PROTECTION; MONOLITHICTRANSIL阵列,用于数据线路保护
ITA25C1
型号: ITA25C1
厂家: ST    ST
描述:

MONOLITHICTRANSIL ARRAY FOR DATA LINE PROTECTION
MONOLITHICTRANSIL阵列,用于数据线路保护

瞬态抑制器 二极管 光电二极管 局域网
文件: 总5页 (文件大小:61K)
中文:  中文翻译
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ITA6V5C1 / ITA10C1  
ITA18C1 / ITA25C1  
MONOLITHIC TRANSIL ARRAY FOR DATA LINE PROTECTION  
FEATURES  
HIGH SURGE CAPABILITY TRANSIL ARRAY  
I
PP = 40 A 8/20µs  
UP TO 5 BIDIRECTIONAL TRANSIL FUNC-  
TIONS  
BREAKDOWNVOLTAGEAND MAXIMUMDIF-  
FERENTIAL VOLTAGE BETWEEN TWO  
INPUT PINS :  
ITA6V5 = 6.5 V  
ITA10 = 10 V  
ITA18 = 18 V  
ITA25 = 25 V  
LOW CLAMPINGFACTOR (VCL / VBR) AT HIGH  
CURRENT LEVEL  
SO8  
LOW LEAKAGECURRENT  
LOW INPUT CAPACITANCE  
DESCRIPTION  
Thisis a specifictransil arrayfor RS232, RS423 in-  
terface protection developed in monolithic chip  
form in order to provide a high surge capabilityand  
a low clamping voltage  
FUNCTIONAL DIAGRAM  
IN ACCORDANCE WITH :  
- ESD standard :  
. IEC 801-2  
. IEC 801-4  
. IEC 801-5  
15kV 5ns / 50ns  
40A  
1kV  
25A  
5ns / 50ns  
1.2 / 50µs  
8 / 20µs  
GND  
8
7
I/01 1  
I/02 2  
. MIL STD 883C - Method 3015-2  
VP = 25kV  
C = 150pF  
R = 150Ω  
5 s duration  
6
I/03 3  
I/04 4  
5 GND  
- Human body test :  
VP = 4kV  
C = 150pF  
R = 150Ω  
EQUIVALENT TO 4 BIDIRECTIONAL TRANSILS  
April 1998 - Ed: 3  
1/5  
ITA6V5C1/ ITA10C1 / ITA18C1 / ITA25C1  
ABSOLUTE RATINGS (limiting values) (0°C Tamb 70°C)  
Symbol  
Parameter  
Value  
Unit  
IPP  
Peak pulse current for 8/20 µsexponential  
Seenote  
Seenote  
40  
A
pulse  
I2t  
Wire I2 t value  
0.6  
A2s  
Tstg  
Tj  
Storage and Junction Temperature Range  
- 55 to + 150  
125  
°C  
°C  
Note :  
%I  
pp  
For surges greater than the maximum value specified, the  
input/output will present first a short circuit to the common  
bus line and after an open circuit caused by the wire.  
8
s
100  
Pulse wave form 8/20  
s
t
50  
0
20  
s
ELECTRICAL CHARACTERISTICS  
I
Symbol  
IRM  
Parameter  
Leakage Current @ VRM  
Stand-off Voltage  
Breakdown Voltage  
Clamping Voltage  
SurgeCurrent  
I
PP  
I
R
VRM  
VBR  
VCL  
IPP  
V
BR  
I
RM  
V
V
V
RM  
CL  
C
Input Capacitance  
IRM  
@
VRM VBR  
@
IR  
VCL  
@
IPP  
VCL  
IPP  
C 1  
C 2  
T
α
max  
min  
8/20 s  
max  
Note 1  
V
8/20 s  
max  
max  
max  
µ
µ
Types  
Note 1  
Note 1  
V
Note 2 Note 3  
µA  
V
V
mA  
A
A
pF  
pF  
10-4/°C  
ITA6V5C1  
ITA10C1  
ITA18C1  
ITA25C1  
10  
5
6.5  
1
1
1
1
10  
10  
12  
25  
750  
550  
4
10  
4
8
10  
18  
25  
15  
25  
33  
10  
10  
10  
19  
28  
38  
25  
25  
25  
570  
350  
300  
260  
180  
100  
8
9
15  
24  
4
12  
All parameterstested at 25°C, except where indicated.  
Note 1: BetweenI/O pin and ground.  
Note 2: Betweentwo input Pins at 0 V Bias.  
Note 3:  
Betweentwo input Pins at VRM  
.
2/5  
ITA6V5C1 / ITA10C1 / ITA18C1 / ITA25C1  
Fig.1 :  
tial pulse duration.  
Fig.2 :  
Typical Peak pulse power versus exponen-  
Clamping voltage versus peak pulse cur-  
rent exponentialwaveform 8/20 µs.  
P
(W)  
V
(V)  
P
CL  
1E+04  
1E+03  
1E+03  
1E+02  
T
initial = 25oC  
% I  
T
initial = 25oC  
j
PP  
t
j
t
= 8  
s
t
100  
r
ITA25C1  
ITA18C1  
ITA10C1  
ITA6V5C1  
50  
0
t
r
ITA25C1  
ITA18C1  
ITA10C1  
ITA6V5C1  
1E+02  
1E+01  
1E+01  
1E+00  
I
(A)  
t
(ms) expo  
PP  
P
1E-03  
1E-02  
1E-01  
1E+00 1E+01 1E+02  
1E-01  
1E+00  
1E+01  
1E+02  
Fig.3: PeakcurrentIDC inducingopencircuitof the  
wire for one input/output versus pulse duration  
(typical values).  
Fig.4 : Junction capacitance versus reverse ap-  
plied voltage for one input/output(typical values).  
I
(A)  
C (pF)  
1E+03  
DC  
1E+03  
= 25 o  
C
exponential waveform  
T
j
ITA6V5C1  
ITA10C1  
f = 1 MHz  
1E+02  
ITA18C1  
1E+01  
1E+00  
ITA25C1  
V
(V)  
t
(ms)  
R
1E+02  
1E+00  
1E-02  
1E-01  
1E+00  
1E+01  
1E+01  
1E+02  
Note :  
The curve of the figure 2 is specified for a junction temperature of 25 C before surge.  
°
3/5  
ITA6V5C1/ ITA10C1 / ITA18C1 / ITA25C1  
APPLICATION NOTICE  
Types  
Maximum differentialvoltage between two input pins at 25°C  
V
6.5  
ITA6V5C1  
ITA10C1  
ITA18C1  
ITA25C1  
10  
18  
25  
INSTRUCTION GUIDE  
This monolithicTransil Arrayis basedon 6 UnidirectionalTransils witha common cathodeand can be con-  
figurated to offer 4 or 5 bidirectionalfunctions, accordingto the following customerapplication.  
UTILIZATION AS A BIDIRECTIONAL TRANSIL  
ARRAY WITH 4 I/Os.  
Fig 5 : EQUIVALENT TO 4 BIDIRECTIONAL TRANSILS  
The main applicationof this device is to be configu-  
rated as a 4, bidirectional Transil Array as per the  
Pin-out of Fig 5.  
T1  
T2  
I/O1 1  
I/O2 2  
I/O3 3  
Pins 5 and 8 are connected to ground.  
INPUTS/OUTPUTS are from Pin 1 to Pin 4.  
8 GND  
7
6
Note : Thebidirectionalfunctionis madewith2 uni-  
directional Transils. One (T1) is connected to the  
INPUT/OUTPUT, the other one (T2) is connected  
to the ground (see Fig 5).  
Ground is connectedvia 2 diodes T2 and T3 .  
Thisallows to withstand2 specifiedsurgeson 2 dif-  
ferent lines at thesame time.  
T3  
I/O4  
4
GND  
5
UTILIZATION AS A BIDIRECTIONAL TRANSIL  
ARRAY WITH 5 I/Os.  
Fig 6 : EQUIVALENT TO 5 BIDIRECTIONAL TRANSILS  
The ITAxxC1 can be used as a 5 bidirectional  
Transil Array.  
Ground can be connectedto any pin (except6 and  
7).  
The other pins are used as INPUTS and OUT-  
PUTS.  
The bidirectional function is made with 2 unidirec-  
tional Transils T1 and T2. One example with  
ground on Pin 8 is shownin Fig 6.  
This configuration allows to withstand only one  
specified surge at the same time.  
T1  
T2  
GND  
8
7
6
I/O1 1  
I/O2 2  
I/O3  
I/O4  
3
4
5 I/O5  
4/5  
ITA6V5C1 / ITA10C1 / ITA18C1 / ITA25C1  
ORDER CODE  
ITA 25 C 1  
PACKAGE  
INTEGRATED  
TRANSIL ARRAY  
1=SO8 PLASTIC  
V
BR min  
COMMON GROUND  
MARKING  
TYPE  
ITA6V5C1  
6V5C1  
ITA10C1  
10C1  
ITA18C1  
18C1  
ITA25C1  
25C1  
MARKING  
PACKAGE MECHANICAL DATA  
SO8  
DIMENSIONS  
REF.  
Millimetres  
Inches  
Min. Typ. Max. Min. Typ. Max.  
A
a1  
a2  
b
1.75  
0.069  
0.010  
0.065  
0.019  
0.010  
0.1  
0.25 0.004  
1.65  
0.35  
0.48 0.014  
0.25 0.007  
b1 0.19  
C
0.50  
0.020  
c1  
45°(typ)  
D
E
4.8  
5.8  
5.0 0.189  
6.2 0.228  
0.197  
0.244  
e
1.27  
3.81  
0.050  
0.150  
e3  
F
3.8  
0.4  
4.0 0.15  
1.27 0.016  
0.6  
0.157  
0.050  
0.024  
L
Weight : 0.077g  
M
S
8° (max)  
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the  
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No  
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned  
in this publication are subject to change without notice. This publicationsupersedes and replaces all information previously supplied.  
SGS-THOMSON Microelectronics products are not authorizedfor use as critical components in life support devices or systems without express  
written approval of SGS-THOMSON Microelectronics.  
1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.  
SGS-THOMSON Microelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada- China - France - Germany - Italy - Japan - Korea- Malaysia - Malta - Morocco  
The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.  
5/5  

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