L9222-D [STMICROELECTRONICS]

QUAD INVERTING TRANSISTOR SWITCH; QUAD反相晶体管开关
L9222-D
型号: L9222-D
厂家: ST    ST
描述:

QUAD INVERTING TRANSISTOR SWITCH
QUAD反相晶体管开关

晶体 开关 晶体管
文件: 总7页 (文件大小:95K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
L9222  
QUAD INVERTING TRANSISTOR SWITCH  
1
FEATURES  
Figure 1. Packages  
OUTPUT VOLTAGE TO 50V  
OUTPUT CURRENT TO 1.2A  
VERY LOW SATURATION VOLTAGE  
TTL COMPATIBLE INPUTS  
Powerdip (12+2+2)  
SO20L  
INTEGRAL SUPPRESSION DIODE  
Table 1. Order Codes  
Part Number  
L9222  
Package  
(PDIP12+2+2)  
(SO20L)  
2
DESCRIPTION  
The L9222 monolithic quad transistor switch is de-  
signed for high current, high voltage switching ap-  
plications.  
L9222 D  
Each of the four switches is controlled by a logic  
input and all four are controlled by a common en-  
able input. All inputs are TTL-compatible for direct  
connection to logic circuits. Each switch consists  
of an open-collector transistor plus a clamp diode  
for applications with inductive loads.  
The emitters of the four switches are connected to-  
gether to GND. The switches of the same device  
may be paralled. The device is intended to drive  
coils such as relays, solenoids, unipolar stepper  
motors, LED etc.  
Figure 2. BLOCK DIAGRAM  
REV. 3  
1/7  
May 2004  
L9222  
Table 2. ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
– 0.7 to 50  
7
Unit  
V
V
OUT  
Output Voltage  
Logic Supply Voltage  
Input Voltage  
V
V
CC  
V
i
– 0.7 to V + 0.3  
V
CC  
T , T  
Junction and Storage Temperature Range  
– 55 to 150  
°C  
j
ST  
Figure 3. PIN CONNECTION (Top view)  
DIP16  
SO20L  
Table 3. TRUTH TABLE  
Enable  
Input  
Power Out  
ON  
H
H
L
L
H
X
OFF  
OFF  
For each input :  
H= High level  
L= Low level  
X = Don’t care  
Table 4. THERMAL DATA  
Symbol  
Parameter  
Value  
Unit  
°C/W  
°C/W  
R
Thermal Resistance Junction to ambient  
Thermal Resistance Junction to case  
Max  
Max  
90  
14  
th j-amb  
R
th-J-case  
2/7  
L9222  
Table 5. ELECTRICAL CHARACTERISTICS  
= 5Vdc ± 5% V = 5V – 40 T 125°C unless otherwise specified  
V
CC  
EN  
Parameter  
j
Symbol  
Test Condition  
= 2V V = 2V, I = 100mA  
Min.  
Typ.  
Max.  
Unit  
V
V
Output Sustaining Voltage  
Output Leakage Current  
Collector Emitter Saturation  
V
V
V
I
I
I
46  
CE(sus)  
IN  
EN  
OUT  
I
= 50V V = 2V, V = 0.8V  
1
mA  
CEX  
CE  
IN  
EN  
V
0.8V  
IN  
CE(sat)  
0.3  
0.5  
0.8  
V
V
V
= 0.1A  
= 0.3A  
= 0.6A; – 40 + 105 °C  
OUT  
OUT  
OUT  
V
Input Low Voltage  
Input Low Current  
Input High Voltage  
Input High Current  
Logic Supply Current  
0.8  
V
IL  
I
IL  
V
V
= 0.4V  
– 15  
2.0  
µA  
V
IN  
IN  
V
IH  
IH  
I
2.0V  
– 15  
µA  
mA  
mA  
µA  
I
S
All Outputs ON I  
= 06A  
OUT  
50  
10  
90  
20  
All Outputs OFF  
= 50V  
I
Clamp Diode Leakage Current  
Clamp Diode Forward Voltage  
V
100  
R
R
Diode Reverse Voltage  
V
I = 0.6A  
F
1.8  
2.0  
V
V
F
I = 1.2A  
F
Output Current  
V
= 0.4V, R = 10, V = 13V  
0.9  
1.2  
A
IOUT  
IN  
S
T
T
V
Propagation Delay Time  
(high to low transition)  
T = 25°C  
I = 600mA  
L
20  
20  
µs  
PHL  
j
Propagation Delay Time  
(low to high transition)  
I = 600mA  
µs  
PHL  
L
T = 25°C  
j
Low Enable Voltage  
Low Enable Current  
High Enable Voltage  
High Enable Voltage  
0.8  
V
µA  
V
ENL  
ENL  
I
V
V
= 0.4V  
– 15  
2.0  
EN  
EN  
V
ENH  
ENH  
I
2.0V  
– 15  
15  
µA  
3/7  
L9222  
Figure 4. Powerdip (12+2+2 0Mechanical Data & Package Dimensions  
mm  
inch  
DIM.  
OUTLINE AND  
MECHANICAL DATA  
MIN. TYP. MAX. MIN. TYP. MAX.  
a1  
B
b
0.51  
0.85  
0.020  
1.40 0.033  
0.055  
0.50  
0.020  
b1  
D
E
e
0.38  
0.50 0.015  
20.0  
0.020  
0.787  
8.80  
2.54  
0.346  
0.100  
0.700  
e3  
F
17.78  
7.10  
5.10  
0.280  
0.201  
I
L
3.30  
0.130  
Powerdip 16  
Z
1.27  
0.050  
4/7  
L9222  
Figure 5. SO20L Mechanical Data & Package Dimensions  
mm  
inch  
DIM.  
OUTLINE AND  
MECHANICAL DATA  
MIN. TYP. MAX. MIN.  
TYP. MAX.  
0.104  
A
A1  
B
2.35  
0.10  
0.33  
0.23  
12.60  
2.65 0.093  
0.30 0.004  
0.51 0.013  
0.32 0.009  
13.00 0.496  
0.012  
0.200  
C
0.013  
(1)  
D
0.512  
E
e
7.40  
7.60 0.291  
0.299  
0.050  
1.27  
H
10.0  
0.25  
0.40  
10.65 0.394  
0.75 0.010  
1.27 0.016  
0˚ (min.), 8˚ (max.)  
0.10  
0.419  
h
0.030  
L
0.050  
k
ddd  
0.004  
SO20  
(1) “D” dimension does not include mold flash, protusions or gate  
burrs. Mold flash, protusions or gate burrs shall not exceed  
0.15mm per side.  
0016022 D  
5/7  
L9222  
Table 6. Revision History  
Date  
Revision  
Description of Changes  
March 2004  
May 2004  
2
3
Second Issue  
Stylesheet update. No content change  
6/7  
L9222  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics.  
All other names are the property of their respective owners  
© 2004 STMicroelectronics - All rights reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States  
www.st.com  
7/7  

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