M25P40VMF6TP [STMICROELECTRONICS]

512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface; 512 Kb到32兆位,低电压,串行闪存采用40 MHz或50 MHz的SPI总线接口
M25P40VMF6TP
型号: M25P40VMF6TP
厂家: ST    ST
描述:

512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface
512 Kb到32兆位,低电压,串行闪存采用40 MHz或50 MHz的SPI总线接口

闪存
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中文:  中文翻译
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M25PXX  
512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory  
With 40 MHz or 50 MHz SPI Bus Interface  
DATA BRIEF  
FEATURES SUMMARY  
512Kbit to 32Mbit of Flash Memory  
Figure 1. Packages  
Page Program (up to 256 Bytes) in 1.4ms  
(typical)  
Sector Erase (256 Kbit or 512Kbit)  
Bulk Erase (512Kbit to 32Mbit)  
2.7 to 3.6V Single Supply Voltage  
SPI Bus Compatible Serial Interface  
40MHz to 50MHz Clock Rate (maximum)  
Deep Power-down Mode 1µA (typical)  
Electronic Signatures  
VDFPN8 (ME)  
8x6mm (MLP8)  
JEDEC Standard Two-Byte Signature  
(20xxh)  
RES Instruction, One-Byte, Signature, for  
backward compatibility  
VDFPN8 (MP)  
(MLP8)  
More than 100000 Erase/Program Cycles per  
Sector  
More than 20 Year Data Retention  
Table 1. Product List  
Reference  
Part Number  
M25P32  
M25P16  
M25P80  
M25P40  
M25P20  
M25P10-A  
M25P05-A  
SO16 (MF)  
300 mil width  
M25Pxx  
8
1
SO8 (MN)  
150 mil width  
October 2004  
1/7  
For further information contact your local ST sales office.  
M25PXX  
Figure 3. SO8 and VDFPN Connections  
SUMMARY DESCRIPTION  
The M25Pxx is a 512Kbit to 32Mbit (2M x 8) Serial  
Flash Memory, with advanced write protection  
mechanisms, accessed by a high speed SPI-com-  
patible bus.  
The memory can be programmed 1 to 256 bytes at  
a time, using the Page Program instruction.  
The memory is organized as a number of sectors,  
each containing 256 or 128 pages. Each page is  
256 bytes wide.  
The whole memory can be erased using the Bulk  
Erase instruction, or a sector at a time, using the  
Sector Erase instruction.  
M25Pxx  
S
Q
1
2
3
4
8
V
CC  
HOLD  
7
6
W
C
D
V
5
SS  
AI10259  
Figure 2. Logic Diagram  
V
CC  
D
C
S
Q
Note: 1. There is an exposed die paddle on the underside of the  
MLP8 package. This is pulled, internally, to V , and  
SS  
must not be allowed to be connected to any other voltage  
or signal line on the PCB.  
M25Pxx  
Figure 4. SO16 Connections  
W
M25Pxx  
HOLD  
HOLD  
1
2
3
4
5
6
7
8
16  
15  
C
V
D
CC  
DU  
14  
DU  
DU  
DU  
DU  
V
SS  
AI10258  
DU  
DU  
DU  
S
13  
12  
11  
10  
V
SS  
W
Table 2. Signal Names  
Q
9
C
Serial Clock  
Serial Data Input  
Serial Data Output  
Chip Select  
Write Protect  
Hold  
AI10260  
D
Note: 1. DU = Don’t Use  
Q
S
W
HOLD  
V
Supply Voltage  
Ground  
CC  
V
SS  
2/7  
M25PXX  
Figure 5. Block Diagram  
HOLD  
High Voltage  
Generator  
W
S
Control Logic  
C
D
Q
I/O Shift Register  
Status  
Register  
Address Register  
and Counter  
256 Byte  
Data Buffer  
Top of Address Space  
Size of the  
read-only  
memory area  
00000h  
000FFh  
256 Bytes (Page Size)  
X Decoder  
AI10261  
3/7  
M25PXX  
Table 3. Instruction Set  
Address  
Bytes  
Dummy  
Bytes  
Data  
Bytes  
Instruction  
Description  
One-byte Instruction Code  
WREN  
WRDI  
RDID  
Write Enable  
0000 0110  
0000 0100  
1001 1111  
0000 0101  
0000 0001  
0000 0011  
0000 1011  
0000 0010  
1101 1000  
1100 0111  
1011 1001  
06h  
04h  
9Fh  
05h  
01h  
03h  
0Bh  
02h  
D8h  
C7h  
B9h  
0
0
0
0
0
3
3
3
3
0
0
0
0
0
0
0
0
1
0
0
0
0
0
Write Disable  
0
1 to 3  
1 to  
1
Read Identification  
Read Status Register  
Write Status Register  
Read Data Bytes  
RDSR  
WRSR  
READ  
1 to ∞  
1 to ∞  
1 to 256  
0
FAST_READ Read Data Bytes at Higher Speed  
PP  
SE  
BE  
DP  
Page Program  
Sector Erase  
Bulk Erase  
0
Deep Power-down  
0
Release from Deep Power-down,  
and Read Electronic Signature  
0
0
3
0
1 to ∞  
RES  
1010 1011  
ABh  
Release from Deep Power-down  
0
Table 4. Status Register Format  
b7  
b0  
SRWD  
0
0
BP2 BP1 BP0 WEL WIP  
Status Register  
Write Protect  
Block Protect Bits  
Write Enable Latch Bit  
Write In Progress Bit  
4/7  
M25PXX  
PART NUMBERING  
Table 5. Ordering Information Scheme  
Example:  
M25P80  
V
MP  
6
T
P
Device Type  
M25P = Serial Flash Memory for Code Storage  
Device Function  
32 = 32Mbit (4M x 8)  
16 = 16Mbit (2M x 8)  
80 = 8Mbit (1M x 8)  
40 = 4Mbit (512K x 8)  
20 = 2Mbit (256K x 8)  
10-A = 1Mbit (128K x 8)  
05-A = 512Kbit (64K x 8)  
Operating Voltage  
V = V = 2.7 to 3.6V  
CC  
Package  
ME = VDFPN8 8x6mm (MLP8)  
MP = VDFPN8 (MLP8)  
MF = SO16 (300 mil width)  
MN = SO8 (150 mil width)  
Device Grade  
6 = Industrial temperature range, –40 to 85 °C.  
Device tested with standard test flow  
1
3 = Device tested with High Reliability Certified Flow .  
Automotive temperature range (–40 to 125 °C)  
Option  
blank = Standard Packing  
T = Tape and Reel Packing  
Plating Technology  
blank = Standard SnPb plating  
P = Lead-Free and RoHS compliant  
G = Lead-Free, RoHS compliant, Sb O -free and TBBA-free  
2
3
Note: 1. ST strongly recommends the use of the Automotive Grade devices for use in an automotive environment. The High Reliability Cer-  
tified Flow (HRCF) is described in the quality note QNEE9801. Please ask your nearest ST sales office for a copy.  
For a list of available options (speed, package,  
etc.) or for further information on any aspect of this  
device, please contact your nearest ST Sales Of-  
fice.  
5/7  
M25PXX  
REVISION HISTORY  
Table 6. Document Revision History  
Date  
Rev.  
Description of Revision  
08-Oct-2004  
1.0 First release  
6/7  
M25PXX  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics.  
All other names are the property of their respective owners  
© 2004 STMicroelectronics - All rights reserved  
STMicroelectronics group of companies  
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America  
www.st.com  
7/7  

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