M27C516-10XN1 [STMICROELECTRONICS]

32KX16 OTPROM, 85ns, PDSO40, 10 X 14 MM, PLASTIC, TSOP-40;
M27C516-10XN1
型号: M27C516-10XN1
厂家: ST    ST
描述:

32KX16 OTPROM, 85ns, PDSO40, 10 X 14 MM, PLASTIC, TSOP-40

可编程只读存储器 光电二极管
文件: 总12页 (文件大小:93K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
M27C516  
512 Kbit (32Kb x16) OTP EPROM  
5V ± 10% SUPPLYVOLTAGEin READ  
OPERATION  
FASTACCESS TIME: 35ns  
LOW POWER CONSUMPTION:  
– Active Current 30mA at 5MHz  
– Stand-byCurrent 100µA  
PROGRAMMING VOLTAGE: 12.75V 0.25V  
±
PROGRAMMING TIME: 100 s/word (typical)  
µ
ELECTRONIC SIGNATURE  
– ManufacturerCode: 0020h  
– Device Code: 000Fh  
PLCC44 (C)  
TSOP40 (N)  
10 x 14mm  
Figure 1. Logic Diagram  
DESCRIPTION  
The M27C516 is a 512 Kbit EPROM offered in the  
OTP range (one time programmable). It is ideally  
suited for microprocessor systems requiring large  
data or program storage and is organized as  
32,768 words of 16 bits.  
TheM27C516is offeredin aPLCC44andTSOP40  
(10 x 14mm) packages.  
V
V
PP  
CC  
15  
16  
A0-A14  
Q0-Q15  
P
E
M27C516  
Table 1. Signal Names  
A0-A14  
Q0-Q15  
E
Address Inputs  
Data Outputs  
Chip Enable  
G
G
Output Enable  
Program Enable  
Supply Voltage  
Program Supply  
Ground  
V
SS  
AI00932  
P
VCC  
VPP  
VSS  
September 1998  
1/12  
M27C516  
Figure 2A. LCC Pin Connections  
Figure 2B. TSOP Pin Connections  
A9  
A10  
A11  
A12  
A13  
A14  
NC  
NC  
P
1
40  
V
SS  
A8  
A7  
A6  
1 44  
A5  
Q12  
A13  
A12  
A11  
A10  
A9  
A4  
Q11  
Q10  
Q9  
A3  
A2  
A1  
Q8  
V
10  
11  
M27C516  
(Normal)  
31  
30  
A0  
CC  
V
12  
M27C516  
34  
V
SS  
SS  
V
PP  
E
G
NC  
Q7  
Q6  
Q5  
Q4  
NC  
A8  
A7  
A6  
A5  
DQ0  
DQ1  
DQ2  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
DQ15  
DQ14  
DQ13  
DQ12  
DQ11  
DQ10  
DQ9  
23  
AI00934  
DQ8  
20  
21  
V
SS  
AI01600  
Warning: NC = Not Connected.  
Warning: NC = Not Connected.  
Table 2. Absolute Maximum Ratings (1)  
Symbol  
TA  
Parameter  
Ambient Operating Temperature (3)  
Value  
–40 to 125  
–50 to 125  
–65 to 150  
–2 to 7  
Unit  
C
°
TBIAS  
TSTG  
Temperature Under Bias  
Storage Temperature  
Input or Output Voltages (except A9)  
Supply Voltage  
°C  
C
°
(2)  
VIO  
V
VCC  
–2 to 7  
V
V
V
(2)  
VA9  
A9 Voltage  
–2 to 13.5  
–2 to 14  
VPP  
Program Supply Voltage  
Notes:  
1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”AbsoluteMaximum Ratings”  
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other  
conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum  
Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other  
relevant quality documents.  
2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0Vfor a period less than 20ns. Maximum DC  
voltage on Output is VCC +0.5V with possible overshoot to VCC +2V for a period less than 20ns.  
3. Depends on range.  
2/12  
M27C516  
Table 3. Operating Modes  
Mode  
Read  
E
G
VIL  
VIH  
X
P
A9  
X
VPP  
VCC  
VCC  
VPP  
VPP  
VPP  
VCC  
VCC  
Q0 - Q15  
Data Out  
Hi-Z  
VIL  
VIL  
VIL  
VIL  
VIH  
VIH  
VIL  
VIH  
Output Disable  
Program  
X
X
VIL Pulse  
X
Data In  
Data Out  
Hi-Z  
Verify  
VIL  
X
VIH  
X
X
Program Inhibit  
Standby  
X
X
X
X
Hi-Z  
Electronic Signature  
VIL  
VIH  
VID  
Codes  
Notes  
: X = VIH or VIL, VID = 12V ± 0.5V  
Table 4. Electronic Signature  
Identifier  
Manufacturer’s Code  
Device Code  
A0  
VIL  
VIH  
Q7  
0
Q6  
0
Q5  
1
Q4  
Q3  
Q2  
Q1  
0
Q0  
Hex Data  
20h  
0
0
0
1
0
1
0
1
0
0
0
1
0Fh  
Note: Outputs Q8-Q15 are set to ’0’.  
DEVICE OPERATION  
M27C516 is placed in the standbymode by apply-  
inga CMOShigh signal to the E input. When in the  
standbymode, theoutputsareina highimpedance  
state, independentof the G input.  
The operating modes of the M27C516 are listed in  
the Operating Modes table. A single power supply  
is required in the read mode. All inputs are TTL  
levels except for G and 12V on A9 for Electronic  
Signature.  
Two Line Output Control  
Because OTP EPROMsare usually used in larger  
memoryarrays,theproductfeaturesa 2linecontrol  
function which accommodates the use of multiple  
memory connection. The two line control function  
allows:  
Read Mode  
The M27C516 has two control functions, both of  
which must be logically active in order to obtain  
data at the outputs. Chip Enable (E) is the power  
control and should be used for device selection.  
OutputEnable(G) is the output control and should  
be used to gate data to the output pins, inde-  
pendent of device selection. Assuming that the  
addresses are stable, the address access time  
(tAVQV) isequalto thedelayfromE tooutput(tELQV).  
Datais availableatthe outputafter a delayof tGLQV  
from the falling edge of G, assuming that E has  
been low and the addresses have been stable for  
a. thelowest possible memorypowerdissipation,  
b. complete assurance that output bus contention  
will not occur.  
Forthe mostefficientuse ofthesetwo controllines,  
E should be decoded and used as the primary  
device selecting function, while G should be made  
a common connection to all devices in the array  
and connected to the READ line from the system  
controlbus. This ensures that all deselectedmem-  
ory devices are in their low power standby mode  
and that the output pins are only active when data  
is required from a particular memory device.  
at least tAVQV-tGLQV  
.
Standby Mode  
TheM27C516 has a standby mode which reduces  
the supply current from 30mA to 100µA. The  
3/12  
M27C516  
Table 5. AC Measurement Conditions  
High Speed  
10ns  
Standard  
20ns (10% to 90%)  
0.4V to 2.4V  
Input Rise and Fall Times  
Input Pulse Voltages  
0 to 3V  
1.5V  
Input and Output Timing Ref. Voltages  
0.8V and 2V  
Figure 3. AC Testing Input Output Waveform  
Figure 4. AC Testing Load Circuit  
1.3V  
High Speed  
3V  
1N914  
1.5V  
0V  
3.3kΩ  
DEVICE  
UNDER  
TEST  
Standard  
OUT  
= 30pF or 60pF or 100pF  
2.4V  
C
L
2.0V  
0.8V  
0.4V  
C
includes JIG capacitance  
AI01822  
L
AI02024B  
Table 6. Capacitance  
°
(TA = 25 C, f = 1 MHz )  
Symbol  
Parameter  
Test Condition  
VIN = 0V  
Min  
Max  
6
Unit  
pF  
CIN  
Input Capacitance  
Output Capacitance  
COUT  
VOUT = 0V  
12  
pF  
Notes. 1. VCC must be applied simultaneously with or before VPP and removed simultaneously with or after VPP  
.
2. This parameter is sampled only and not tested 100%.  
System Considerations  
output controland by properlyselecteddecoupling  
capacitors.It is recommended that a 1µF ceramic  
capacitor be used on every device between VCC  
and VSS. Thisshouldbe a highfrequencycapacitor  
of low inherent inductance and should be placed  
as close to the device as possible. In addition, a  
4.7µF bulk electrolytic capacitor should be used  
betweenVCC and VSS forevery eight devices. The  
bulk capacitor should be located near the power  
supplyconnection point.The purpose of the bulk  
capacitor is to overcome the voltage drop caused  
by the inductive effects of PCB traces.  
The power switching characteristics of Advanced  
CMOS EPROMsrequire careful decouplingof the  
devices. The supply current, ICC, has three seg-  
ments that are of interest to the system designer:  
the standby current level, the active current level,  
and transient current peaks that are produced by  
the falling and risingedges of E. Themagnitudeof  
the transient current peaks is dependent on the  
capacitiveandinductiveloadingof thedeviceatthe  
output.Theassociatedtransientvoltagepeaks can  
be suppressed by complying with the two line  
4/12  
M27C516  
Table 7. Read Mode DC Characteristics(1)  
(TA = 0 to 70 °C or –40 to 85 °C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC  
)
Symbol  
ILI  
Parameter  
Input Leakage Current  
Output Leakage Current  
Supply Current  
Test Condition  
0V  
Min  
Max  
Unit  
V
IN  
V
CC  
1
±
A
µ
ILO  
0V VOUT VCC  
E = VIL, G = VIL, f = 5MHz  
E = VIH  
±5  
30  
µA  
mA  
mA  
ICC  
ICC1  
ICC2  
IPP  
Supply Current (Standby) TTL  
Supply Current (Standby) CMOS  
Program Current  
1
E > VCC – 0.3V  
VPP = VCC  
100  
10  
A
µ
µA  
V
VIL  
Input Low Voltage  
–0.3  
2
0.8  
(2)  
VIH  
Input High Voltage  
VCC + 1  
0.4  
V
VOL  
VOH  
Output Low Voltage  
IOL = 2.1mA  
IOH = –400µA  
IOH = –100µA  
V
Output High Voltage TTL  
Output High Voltage CMOS  
2.4  
V
VCC –0.7V  
V
Notes: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP  
.
2. Maximum DC Voltage on Output is VCC +0.5V.  
Table 8A. Read Mode AC Characteristics (1)  
(TA = 0 to 70 °C or –40 to 85 °C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC  
)
M27C516  
-45 (3)  
Symbol  
Alt  
Parameter  
Test Condition  
Unit  
-35 (3)  
-55 (4)  
Min  
Max  
Min  
Max  
Min  
Max  
Address Valid to Output  
Valid  
tAVQV  
tELQV  
tGLQV  
tACC  
tCE  
tOE  
tDF  
tDF  
tOH  
E = VIL, G = VIL  
G = VIL  
35  
35  
18  
18  
18  
45  
45  
23  
18  
18  
55  
55  
25  
20  
20  
ns  
ns  
ns  
ns  
ns  
ns  
Chip Enable Low to  
Output Valid  
Output Enable Low to  
Output Valid  
E = VIL  
Chip Enable High to  
Output Hi-Z  
(2)  
tEHQZ  
G = VIL  
0
0
0
0
0
0
0
0
0
Output Enable High to  
Output Hi-Z  
(2)  
tGHQZ  
E = VIL  
Address Transitionto  
Output Transition  
tAXQX  
E = VIL, G = VIL  
Notes:  
1. VCC must be applied simultaneously with or before VPP and removed simultaneously with or afterVPP.  
2. Sampled only, not 100% tested.  
3. Speed obtained with High Speed measurement conditions and a load capacitance of 30pF.  
4. Speed obtained with a load capacitance of 60pF.  
5/12  
M27C516  
Table 8B. Read Mode AC Characteristics (1)  
(TA = 0 to 70 °C or –40 to 85 °C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC  
)
M27C516  
Symbol  
Alt  
Parameter  
Test Condition  
Unit  
-70 (3)  
Max  
-85/-10  
Min  
Min  
Max  
tAVQV  
tELQV  
tGLQV  
tACC Address Valid to Output Valid  
tCE Chip Enable Low to Output Valid  
tOE Output Enable Low to Output Valid  
tDF Chip Enable High to Output Hi-Z  
tDF Output Enable High to Output Hi-Z  
E = VIL, G = VIL  
G = VIL  
70  
70  
35  
20  
20  
85  
85  
35  
30  
30  
ns  
ns  
ns  
ns  
ns  
E = VIL  
(2)  
tEHQZ  
G = VIL  
0
0
0
0
(2)  
tGHQZ  
E = VIL  
Address Transition to  
tOH  
tAXQX  
E = VIL, G = VIL  
0
0
ns  
Output Transition  
Notes: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously with or afterVPP.  
2. Sampled only, not 100% tested.  
3. Speed obtained with a load capacitance of 60pF  
Figure 5. Read Mode AC Waveforms  
VALID  
tAVQV  
VALID  
A0-A14  
E
tAXQX  
tEHQZ  
tGHQZ  
tGLQV  
G
tELQV  
Hi-Z  
Q0-Q15  
AI00935B  
Programming  
programming mode whenVPP input is at 12.75V,E  
is at VIL and P is pulsed to VIL. The data to be  
programmed is applied to 16 bits in parallel to the  
data output pins. The evels required for the ad-  
dress and data inputs are TTL. VCC is specifiedto  
be 6.25V ±0.25V.  
When delivered, all bits of the M27C516 are in the  
’1state.Data is introducedby selectivelyprogram-  
ming ’0’s into the desired bit locations. Although  
only ’0’s will be programmed,both ’1’s and0’s can  
be presentin thedata word.TheM27C516is in the  
6/12  
M27C516  
Table 9. Programming Mode DC Characteristics (1)  
(TA = 25 °C; VCC = 6.25V± 0.25V;VPP = 12.75V ± 0.25V)  
Symbol  
ILI  
Parameter  
Input Leakage Current  
Supply Current  
Test Condition  
Min  
Max  
±10  
Unit  
µA  
mA  
mA  
V
V
IL VIN VIH  
ICC  
50  
IPP  
Program Current  
Input Low Voltage  
Input High Voltage  
Output Low Voltage  
Output High Voltage TTL  
A9 Voltage  
E = VIL  
50  
VIL  
–0.3  
2
0.8  
VIH  
VCC + 0.5  
0.4  
V
VOL  
VOH  
VID  
IOL = 2.1mA  
V
IOH = –400µA  
2.4  
V
11.5  
12.5  
.
V
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP  
Table 10. ProgrammingMode AC Characteristics(1)  
(TA = 25 °C; VCC = 6.25V ± 0.25V;VPP = 12.75V ± 0.25V)  
Symbol  
tAVPL  
Alt  
tAS  
Parameter  
Test Condition  
Min  
2
Max  
Unit  
Address Valid to Program Low  
Input Valid to Program Low  
VPP High to Program Low  
VCC High to Program Low  
s
µ
tQVPL  
tDS  
2
µs  
tVPHPL  
tVCHPL  
tVPS  
tVCS  
2
s
µ
2
µs  
µs  
µs  
Chip Enable Low to  
Program Low  
tELPL  
tPLPH  
tPHQX  
tCES  
tPW  
tDH  
2
95  
2
Program Pulse Width  
105  
Program High to Input  
Transition  
s
µ
Input Transition to Output  
Enable Low  
tQXGL  
tGLQV  
tOES  
tOE  
tDFP  
tAH  
2
µs  
ns  
ns  
µs  
Output Enable Low to  
Output Valid  
100  
130  
Output Enable High to  
Output Hi-Z  
(2)  
tGHQZ  
0
0
Output Enable High to  
Address Transition  
tGHAX  
Notes:  
1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP  
.
2. Sampled only and not 100% tested.  
7/12  
M27C516  
Figure 6. Programming and Verify Modes AC Waveforms  
VALID  
A0-A14  
Q0-Q15  
tAVPL  
tQVPL  
DATA IN  
DATA OUT  
tPHQX  
V
PP  
tVPHPL  
tVCHPL  
tGLQV  
tGHQZ  
tGHAX  
V
CC  
E
tELPL  
tPLPH  
P
tQXGL  
G
PROGRAM  
VERIFY  
AI00936  
Figure 7. ProgrammingFlowchart  
PRESTO II ProgrammingAlgorithm  
PRESTO II Programming Algorithm allows to pro-  
gram the whole array with a guaranteedmargin, in  
a typical time of 3 seconds. Programming with  
PRESTO II involvesthe application of a sequence  
V
= 6.25V, V = 12.75V  
PP  
CC  
µ
of100 s programpulsestoeachbyteuntilacorrect  
verify occurs (see Figure 7). During programming  
and verify operation, a MARGIN MODE circuit is  
automatically activated in order to guarantee that  
each cell is programmedwith enough margin. No  
overprogram pulse is applied since the verify in  
MARGIN MODE provides necessary margin to  
each programmedcell.  
n = 0  
P = 100µs Pulse  
NO  
NO  
++n  
= 25  
VERIFY  
YES  
++ Addr  
Program Inhibit  
YES  
Programmingof multipleM27C516sin parallelwith  
different data is also easily accomplished. Except  
for E, all like inputs including G of the parallel  
M27C516 may be common. A TTL low level pulse  
appliedto aM27C516’sP input,with E low andVPP  
at 12.75V,will programthat M27C516.A high level  
E input inhibits the other M27C516s from being  
programmed.  
Last  
Addr  
NO  
FAIL  
YES  
CHECK ALL WORDS  
1st: V  
2nd: V  
= 6V  
= 4.2V  
CC  
CC  
Program Verify  
A verify (read) should be performed on the pro-  
grammedbits todeterminethat theywerecorrectly  
programmed. The verify is accomplished with E  
and G at VIL, P at VIH, VPP at 12.75V and VCC at  
6.25V.  
AI00707C  
8/12  
M27C516  
On-Board Programming  
ming the M27C516. To activate the ES mode, the  
programmingequipmentmustforce11.5Vto 12.5V  
on address line A9 of the M27C516.  
Two identifier bytes may then be sequenced from  
thedeviceoutputsby togglingaddressline A0from  
VIL to VIH. All other address lines must be held at  
VIL during Electronic Signature mode. Byte 0  
The M27C516 can be directly programmed in the  
application circuit. See the relevant Application  
Note AN620.  
Electronic Signature  
The Electronic Signature (ES) mode allows the  
reading out of a binary code from an EPROMthat  
will identify its manufacturer and type. This mode  
is intended for use by programming equipment to  
automatically match the device to be programmed  
withits correspondingprogrammingalgorithm.The  
(A0=V ) represents the manufacturer code and  
IL  
byte 1 (A0=V ) the device identifier code. For the  
IH  
STMicroelectronics M27C516, these two identifier  
bytes are given in Table 4 and can be read-outon  
outputsQ0 to Q7.  
°
± °  
ES mode is functional in the 25 C 5 C ambient  
temperaturerange that is required when program-  
ORDERING INFORMATION SCHEME  
Example: M27C516  
-70 X  
N
1 TR  
Speed  
35 ns  
V
CC Tolerance  
Package  
Temperature Range  
Option  
-35 (1)  
-45 (1)  
-55 (2)  
-70 (2)  
-85  
blank  
X
±10%  
±5%  
C
N
PLCC44  
1
6
0 to 70 °C  
TR Tape & Reel  
Packing  
45 ns  
55 ns  
70 ns  
85 ns  
100 ns  
TSOP40  
10 x 14mm  
–40 to 85 °C  
-10  
Notes:  
1. High Speed, see AC Characteristics section for furtherinformation.  
2. Speed obtained with a load capacitance of 60pF.  
Fora listof availableoptions(Speed,Package,etc...)or for furtherinformationon any aspect ofthis device,  
please contact the STMicroelectronics Sales Office nearest to you.  
9/12  
M27C516  
PLCC44 - 44 lead Plastic Leaded Chip Carrier, square  
mm  
Min  
4.20  
2.29  
inches  
Min  
Symb  
Typ  
Max  
4.70  
3.04  
0.51  
0.53  
0.81  
17.65  
16.66  
16.00  
17.65  
16.66  
16.00  
Typ  
Max  
0.185  
0.120  
0.020  
0.021  
0.032  
0.695  
0.656  
0.630  
0.695  
0.656  
0.630  
A
A1  
A2  
B
0.165  
0.090  
0.33  
0.66  
17.40  
16.51  
14.99  
17.40  
16.51  
14.99  
0.013  
0.026  
0.685  
0.650  
0.590  
0.685  
0.650  
0.590  
B1  
D
D1  
D2  
E
E1  
E2  
e
1.27  
0.89  
0.050  
0.035  
F
0.00  
0.25  
0.000  
0.010  
R
N
44  
44  
CP  
0.10  
0.004  
D
A1  
D1  
A2  
1 N  
B1  
e
Ne  
E1 E  
D2/E2  
F
B
0.51 (.020)  
1.14 (.045)  
Nd  
A
R
CP  
PLCC  
Drawing is not to scale  
10/12  
M27C516  
TSOP40 - 40 lead Plastic Thin Small Outline, 10 x 14mm  
mm  
Min  
inches  
Min  
Symb  
Typ  
Max  
1.20  
0.15  
1.05  
0.27  
0.21  
14.20  
12.50  
10.10  
Typ  
Max  
0.047  
0.006  
0.041  
0.011  
0.008  
0.559  
0.492  
0.398  
A
A1  
A2  
B
0.05  
0.95  
0.17  
0.10  
13.80  
12.30  
9.90  
0.002  
0.037  
0.007  
0.004  
0.543  
0.484  
0.390  
C
D
D1  
E
e
0.50  
0.020  
L
0.50  
0.70  
0.020  
0.028  
0
°
5
°
0
°
5
°
α
N
40  
40  
CP  
0.10  
0.004  
A2  
1
N
e
E
B
N/2  
D1  
D
A
CP  
DIE  
C
TSOP-a  
A1  
α
L
Drawing is not to scale  
11/12  
M27C516  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringementof patents or other rights of thirdparties which may result from its use. No licenseis granted  
by implicationor otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
1998 STMicroelectronics - AllRights Reserved  
STMicroelectronics GROUP OF COMPANIES  
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12/12  

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