M28R400CT100D16 [STMICROELECTRONICS]

Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory; 已知合格芯片4兆位（ 256Kb的X16 ，引导块） 1.8V供应快闪记忆体


型号：	M28R400CT100D16
厂家：	ST
描述：	Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory 已知合格芯片4兆位（ 256Kb的X16 ，引导块） 1.8V供应快闪记忆体闪存存储内存集成电路
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M28R400CT-KGD

M28R400CB-KGD

Known Good Die

4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory

FEATURES SUMMARY

■

SUPPLY VOLTAGE

Figure 1. Delivery Form

–

V_DD= 1.65V to 2.2V Core Power Supply

_DDQ= 1.65V to 2.2V for Input/Output

V_PP= 12V for fast Program (optional)

■

ACCESS TIME: 100ns

PROGRAMMING TIME

–

10µs typical

Double Word Programming Option

■

COMMON FLASH INTERFACE

64 bit Security Code

MEMORY BLOCKS

–

Parameter Blocks (Top or Bottom

location)

–

Main Blocks

Wafer

■

BLOCK LOCKING

–

All blocks locked at Power Up

Any combination of blocks can be locked

WP for Block Lock-Down

SECURITY

–

64 bit user Programmable OTP cells

64 bit unique device identifier

One Parameter Block Permanently

Lockable

■

AUTOMATIC STAND-BY MODE

PROGRAM and ERASE SUSPEND

100,000 PROGRAM/ERASE CYCLES per

BLOCK

■

ELECTRONIC SIGNATURE

–

Manufacturer Code: 20h

Top Device Code, M28R400CT: 882Ah

Bottom Device Code, M28R400CB:

882Bh

June 2004

1/11

M28R400CT-KGD, M28R400CB-KGD

TABLE OF CONTENTS

FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Figure 1. Delivery Form . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

SUMMARY DESCRIPTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

FUNCTIONAL SPECIFICATION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Table 2. Product Specification. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Table 3. Operating Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Table 4. Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Table 5. Write AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Table 6. Physical Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Table 7. Manufacturing Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

DIE SPECIFICATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Figure 3. Die Photograph and Pad Location. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Figure 4. Wafer/Die Orientation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Table 8. Pad Extraction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

PRODUCT TEST FLOW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Figure 5. Product Test Flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

HANDLING INSTRUCTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Processing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Storage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Table 9. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

REVISION HISTORY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Table 10. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

2/11

M28R400CT-KGD, M28R400CB-KGD

SUMMARY DESCRIPTION

The M28R400C are available as Known Good

Dice.

STMicroelectronics defines Known Good Dice as

standard products offered as dice and tested for

functionality and speed. ST's Known Good Die

products are as reliable and of the same quality as

products delivered in packages.

ings necessary for program and erase operations.

The end of a program or erase operation can be

detected and any error conditions identified. The

command set required to control the memory is

consistent with JEDEC standards.

The M28R400C are supplied with all the bits

erased (set to ‘1’)

This datasheet should be read in conjunction with

the full M28R400C datasheet.

Figure 2. Logic Diagram

The M28R400C is a 4 Mbit (256Kbit x 16) non-vol-

atile Flash memory that can be erased electrically

at the block level and programmed in-system on a

Word-by-Word basis. These operations can be

performed using a single low voltage (1.65 to

2.2V) supply. V_DDQallows to drive the I/O pin

down to 1.65V. An optional 12V V_PPpower supply

is provided to speed up customer programming.

The device features an asymmetrical blocked ar-

chitecture. The M28R400C has an array of 15

blocks: 8 Parameter Blocks of 4 KWord and 7

Main Blocks of 32 KWord. M28R400CT has the

Parameter Blocks at the top of the memory ad-

dress space while the M28R400CB locates the

Parameter Blocks starting from the bottom.

DD DDQ PP

A0-A17

DQ0-DQ15

M28R400CT

M28R400CB

The M28R400C features an instant, individual

block locking scheme that allows any block to be

locked or unlocked with no latency, enabling in-

stant code and data protection. All blocks have

three levels of protection. They can be locked and

locked-down individually preventing any acciden-

tal programming or erasure. There is an additional

hardware protection against program and block

erase. When V_PP≤V_PPLKall blocks are protected

against program or block erase. All blocks are

locked at power-up.

AI04392

Table 1. Signal Names

A0-A17

Address Inputs

DQ0-DQ15

Data Input/Output

Chip Enable

Each block can be erased separately. Erase can

be suspended in order to perform either read or

program in any other block and then resumed.

Program can be suspended to read data in any

other block and then resumed. Each block can be

programmed and erased over 100,000 cycles.

The device includes a 128 bit Protection Register

and a Security Block to increase the protection of

a system design. The Protection Register is divid-

ed into two 64 bit segments, the first one contains

a unique device number written by ST, while the

second one is one-time-programmable by the us-

er. The user programmable segment can be per-

manently protected. The Security Block,

parameter block 0, can be permanently protected

by the user.

Output Enable

Write Enable

Reset

Write Protect

Core Power Supply

Power Supply for

Input/Output

DDQ

Optional Supply Voltage for

Fast Program & Erase

Program and Erase commands are written to the

Command Interface of the memory. An on-chip

Program/Erase Controller takes care of the tim-

Ground

3/11

M28R400CT-KGD, M28R400CB-KGD

FUNCTIONAL SPECIFICATION

Refer to the M28R400C (document number 7653

on the ST Internet web site http://www.st.com) for

full functional and electrical specifications of the

product.

Table 2. and Table 3. give the main product spec-

ification and operating conditions while Table 4.

and Table 5. summarize the Read and Write AC

parameters which differ from those given in the

M28R400C datasheet.

See Table 6. and Table 7. for details of the die’s

physical specification and manufacturing.

Table 5. Write AC Characteristics

Symbol

Description

Value

Unit

Address Valid to Next

Address Valid (min)

100

AVAV

Chip Enable Low to

Output Valid (max)

100

ELQV

Table 6. Physical Specification

141.024 mils x 98.504 mils

3.582mm x 2.502mm

137.008mils x 94.488mils

3.480mm x 2.400mm

9.84 mils

Die Dimensions, X by Y

(with scribe line)

Table 2. Product Specification

Die Dimensions, X by Y

(without scribe line)

M28R400CT

Product Root Part Number

M28R400CB

Speed Option

Delivery Form

100ns

Die Thickness

Bond Pad Size

Inked or mapped dice on

whole unsawn wafer

725µm

3.56 mils x 3.56 mils

90.4µm x 90.4µm

12.67 mils²

Table 3. Operating Conditions

= V

= 1.65V to 2.2V

Supply Voltage

Pad Area Free of

Passivation

DDQ

8172µm²

Junction Temperature

Under Bias

TJ (max) = 125°C

Pad per Die

Operating Temperature −40°C to +85°C

Bond Pad Metallization

AlCU, TiN

No Metal

Table 4. Read AC Characteristics

Die Backside

Passivation

May be grounded

USG, Si N

Symbol

Description

Value

Unit

Address Valid to Next

Address Valid (min)

100

AVAV

Table 7. Manufacturing Information

Address Valid to Output

Valid (max)

100

AVQV

Manufacturing Location -

Die Revision

Catania (M5 fab), Italy – V2

Agrate (R2 fab), Italy – V1

Agrate and Catania, Italy

Chip Enable High to

Output Hi-Z (max)

EHQZ

Manufacturing Location -

Die Revision

Chip Enable Low to

Output Valid (max)

100

ELQV

Wafer Sort and Test

Location

Output Enable High to

Output Hi-Z (max)

GHQZ

Manufacturing ID

SA2B9AZ

Output Enable Low to

Output Valid (max)

Preparation for Shipment

Fabrication Process

Agrate and Catania, Italy

0.18µm technology

GLQV

4/11

M28R400CT-KGD, M28R400CB-KGD

DIE SPECIFICATIONS

Figure 3. Die Photograph and Pad Location

LOGO

Figure 4. Wafer/Die Orientation

WAFER FRONT SIDE

LOGO

AI08416

5/11

M28R400CT-KGD, M28R400CB-KGD

Table 8. Pad Extraction

Pad Placement

Pad

Number

Function

Number

Function

A15

A14

A13

A12

A11

A10

–1612.24

–1477.72

–1315.88

–1190.28

–1071.16

–945.56

–783.72

–658.12

–539.00

–377.16

249.16

1068.60

–1023.68

1385.72

1266.60

1141.00

1008.92

889.80

–1023.68

DQ0

DQ8

DQ1

DQ9

DQ2

DQ10

DQ3

DQ11

757.72

638.80

506.52

387.40

255.32

136.20

A17

374.76

DQ4

DQ12

DQ5

–255.08

–387.16

–506.28

–638.36

–757.48

–889.56

–1008.68

–1140.76

–1266.36

–1385.48

–1504.60

–1636.68

536.60

655.72

781.32

DQ13

DQ6

943.16

1068.76

1187.88

1313.48

1475.32

1609.84

1636.92

1504.84

DQ14

DQ7

DQ15

DDQ

A16

Note: 1. All pad placements are referred to the center of the chip and center of the pad. The coordinates can be used to operate wire bonding

equipment.

2. NC = Pad not connected.

3. Dimensions are given in microns.

6/11

M28R400CT-KGD, M28R400CB-KGD

PRODUCT TEST FLOW

Figure 5. gives an overview of ST’s Known Good

Die test flow.

plemented to ensures that ST’s quality standards

are met on Known Good Die products.

STMicroelectronics implements quality assurance

procedures throughout the product test flow. In ad-

dition, an off-line quality monitoring program is im-

With ST’s quality procedures, Known Good Die

products can be produced without requiring burn-

in.

Figure 5. Product Test Flow

DC Parameters

Functionality

Programmability

Erasability

Wafer Sort 1

BAKE 24 hours at 250˚C

Wafer Sort 2

Data Retention

DC Parameters

Functionality

Programmability

Erasability

BAKE 12 hours at 250˚C

DC Parameters

Functionality

Programmability

Erasability

Speed

Wafer Sort 3 High Temperature

Packaging and Shipment

Visual Inspection Sampling

Wafer Pack

ai08366

7/11

M28R400CT-KGD, M28R400CB-KGD

HANDLING INSTRUCTIONS

Processing

Storage

Known Good Die products should not be exposed

to ultraviolet light or be processed at temperatures

greater than 250°C.

Known Good Die products should be stored at a

maximum temperature of 30°C in a nitrogen-

purged cabinet or a vacuum-sealed bag.

Failure to adhere to these handling instructions will

result in irreparable damage to the devices. For

best yield, ST recommends assembly in a Class

10K clean room with 30% to 60% relative humidity.

All standard ESD (ElectroStatic Discharge) han-

dling procedures should be observed.

8/11

M28R400CT-KGD, M28R400CB-KGD

PART NUMBERING

Table 9. Ordering Information Scheme

Example:

M28R400C T

100 D1

Device Type

M28

Operating Voltage

R = V = 1.65V to 2.2V; V

= 1.65V or 2.2V

DDQ

Device Function

400C = 4 Mbit (256Kb x16), Boot Block

Array Matrix

T = Top Boot

B = Bottom Boot

Speed

100 = 100ns

Packaging

D1 = Inked or mapped dice on whole unsawn wafer

Temperature Range

6 = –40 to 85 °C

Note:Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available

options (Speed and Delivery Form) or for further information on any aspect of this device, please con-

tact the ST Sales Office nearest to you.

9/11

M28R400CT-KGD, M28R400CB-KGD

REVISION HISTORY

Table 10. Document Revision History

Date

Version

1.0

Revision Details

12-Jun-2003

15-Jun-2004

First Issue.

Title modified, -KGD suffix added to part number.

2.0

10/11

M28R400CT-KGD, M28R400CB-KGD

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted

by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject

to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not

authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics.

All other names are the property of their respective owners.

STMicroelectronics GROUP OF COMPANIES

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www.st.com

11/11

M28R400CT100D16 [STMICROELECTRONICS]

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