M54HCT245K [STMICROELECTRONICS]
RAD HARD OCTAL BUS TRANSCEIVER WITH 3 STATE OUTPUTS (NON INVERTED); 具有三态输出抗辐射八路总线收发器（非反相）
| 型号： | M54HCT245K |
| 厂家： | 
ST |
| 描述： | RAD HARD OCTAL BUS TRANSCEIVER WITH 3 STATE OUTPUTS (NON INVERTED) |
| 文件： | 总10页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M54HCT245
RAD HARD OCTAL BUS TRANSCEIVER
WITH 3 STATE OUTPUTS (NON INVERTED)
■
■
■
■
■
■
HIGH SPEED:
= 13ns (TYP.) at V
t
= 4.5V
CC
PD
LOW POWER DISSIPATION:
= 4µA(MAX.) at T =25°C
I
CC
A
COMPATIBLE WITH TTL OUTPUTS:
= 2V (MIN.) V = 0.8V (MAX)
V
IH
IL
SYMMETRICAL OUTPUT IMPEDANCE:
|I | = I = 6mA (MIN)
OH
OL
DILC-20
FPC-20
BALANCED PROPAGATION DELAYS:
t
t
PLH
PHL
PIN AND FUNCTION COMPATIBLE WITH
54 SERIES 245
SPACE GRADE-1: ESA SCC QUALIFIED
50 krad QUALIFIED, 100 krad AVAILABLE ON
REQUEST
NO SEL UNDER HIGH LET HEAVY IONS
IRRADIATION
DEVICE FULLY COMPLIANT WITH
SCC-9405-014
ORDER CODES
PACKAGE
■
■
FM
EM
DILC
FPC
M54HCT245D
M54HCT245K
M54HCT245D1
M54HCT245K1
■
■
direction of data transmission is determined by
DIR input. The enable input G can be used to
disable the device so that the buses are effectively
isolated.
DESCRIPTION
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
All floating bus terminals during High Z State must
be held HIGH or LOW.
The M54HCT245 is an advanced high-speed
CMOS OCTAL BUS TRANSCEIVER (3-STATE)
fabricated with silicon gate C MOS technology.
This IC is intended for two-way asynchronous
communication between data buses, and the
2
PIN CONNECTION
Rev. 1
1/10
June 2004
M54HCT245
Figure 1: IEC Logic Symbols
Figure 2: Input And Output Equivalent Circuit
Table 1: Pin Description
PIN N°
SYMBOL
NAME AND FUNCTION
1
DIR
Directional Control
Data Inputs/Outputs
2, 3, 4, 5, 6,
7, 8, 9
A1 to A8
18, 17, 16,
15, 14, 13,
12, 11
B1 to B8
Data Inputs/Outputs
19
10
20
G
Output Enable Input
Ground (0V)
GND
V
Positive Supply Voltage
CC
Table 2: Truth Table
INPUTS
FUNCTION
OUTPUT
Yn
G
DIR
A BUS
B BUS
L
L
L
H
X
OUTPUT
INPUT
Z
INPUT
OUTPUT
Z
A = B
B = A
Z
H
X : Don’t Care
Z : High Impedance
2/10
M54HCT245
Table 3: Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
V
Supply Voltage
-0.5 to +7
V
V
CC
V
DC Input Voltage
-0.5 to V + 0.5
I
CC
V
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Current
-0.5 to V + 0.5
V
O
CC
I
± 20
± 20
mA
mA
mA
mA
mW
°C
IK
I
OK
I
± 35
O
I
or I
DC V
or Ground Current
CC
± 70
CC
GND
P
Power Dissipation
420
D
T
Storage Temperature
Lead Temperature (10 sec)
-65 to +150
265
stg
T
°C
L
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
Table 4: Recommended Operating Conditions
Symbol
Parameter
Value
Unit
V
Supply Voltage
4.5 to 5.5
V
V
CC
V
Input Voltage
0 to V
I
CC
V
Output Voltage
0 to V
V
O
CC
T
Operating Temperature
-55 to 125
0 to 500
°C
ns
op
t , t
Input Rise and Fall Time (V = 4.5 to 5.5V)
CC
r
f
3/10
M54HCT245
Table 5: DC Specifications
Test Condition
Value
T
= 25°C
Symbol
Parameter
-40 to 85°C -55 to 125°C Unit
A
V
CC
(V)
Min. Typ. Max. Min. Max. Min. Max.
V
High Level Input
Voltage
4.5
to
IH
2.0
2.0
2.0
V
5.5
V
Low Level Input
Voltage
4.5
to
IL
0.8
0.1
0.8
0.8
V
V
5.5
V
High Level Output
Voltage
I =-20 µA
4.4
4.5
4.4
4.4
OH
O
4.5
I =-6.0 mA
4.18 4.31
0.0
4.13
4.10
O
V
Low Level Output
Voltage
I =20 µA
0.1
0.1
OL
O
4.5
5.5
V
I =6.0 mA
0.17 0.26
0.33
0.40
O
I
Input Leakage
Current
I
V = V or GND
± 0.1
± 1
± 1
µA
I
CC
I
High Impedance
Output Leakage
Current
OZ
V = V or V
IL
I
IH
5.5
± 0.5
± 5
± 10
µA
V
= V or GND
CC
O
I
Quiescent Supply
Current
CC
V = V or GND
5.5
5.5
4
40
80
µA
I
CC
∆ I
Additional Worst
Case Supply
Current
Per Input pin
2.0
2.9
3.0
mA
CC
V = 0.5V or
I
V = 2.4V
I
Other Inputs at
or GND
V
CC
I
= 0
O
Table 6: AC Electrical Characteristics (C = 50 pF, Input t = t = 6ns)
L
r
f
Test Condition
Value
T
= 25°C
Symbol
Parameter
-40 to 85°C -55 to 125°C Unit
A
V
C
L
CC
(V)
4.5
4.5
(pF)
Min. Typ. Max. Min. Max. Min. Max.
t
t
Output Transition
Time
TLH THL
50
7
12
15
18
ns
ns
t
t
t
Propagation Delay
Time
50
150
50
13
18
19
22
30
30
28
38
38
33
45
45
PLH PHL
t
High Impedance
Output Enable
Time
R = 1 KΩ
PZL PZH
L
4.5
4.5
ns
ns
R = 1 KΩ
150
24
38
48
57
L
t
t
High Impedance
Output Disable
Time
PLZ PHZ
R = 1 KΩ
50
17
30
38
45
L
4/10
M54HCT245
Table 7: Capacitive Characteristics
Test Condition
Value
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
T
= 25°C
Symbol
Parameter
A
V
CC
(V)
C
Input Capacitance
DIR, G
An, Bn
5
10
10
10
pF
pF
IN
Output
Capacitance
C
13
I/OUT
C
Power Dissipation
Capacitance (note
1)
PD
41
pF
1) C is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
PD
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
= C x V x f + I /8 (per circuit)
CC(opr)
PD CC IN CC
Figure 3: Test Circuit
TEST
SWITCH
t
t
t
, t
Open
PLH PHL
, t
V
CC
PZL PLZ
, t
GND
PZH PHZ
C
R
R
= 50pF/150pF or equivalent (includes jig and probe capacitance)
= 1KΩ or equivalent
L
1
T
= Z
of pulse generator (typically 50Ω)
OUT
5/10
M54HCT245
Figure 4: Waveform - Propagation Delay Time (f=1MHz; 50% duty cycle)
Figure 5: Waveform - Output Enable And Disable Time (f=1MHz; 50% duty cycle)
6/10
M54HCT245
DILC-20 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
TYP
MAX.
MIN.
MAX.
A
a1
a2
B
2.1
3.00
0.63
1.93
0.40
0.20
25.14
7.36
2.71
3.70
1.14
2.23
0.50
0.30
25.65
7.87
0.083
0.118
0.025
0.076
0.016
0.008
0.990
0.290
0.107
0.146
0.045
0.088
0.020
0.012
1.010
0.310
0.88
2.03
0.45
0.254
25.40
7.62
2.54
22.86
7.87
7.49
0.035
0.080
0.018
0.010
1.000
0.300
0.100
0.900
0.310
0.295
b
b1
D
E
e
e1
e2
F
22.73
7.62
7.29
22.99
8.12
7.70
3.86
11.56
1.40
0.895
0.300
0.287
0.905
0.320
0.303
0.152
0.455
0.055
I
K
11.30
1.14
0.445
0.045
L
1.27
0.050
0016178J
7/10
M54HCT245
FPC-20 MECHANICAL DATA
mm.
inch
DIM.
MIN.
9.98
9.98
1.45
0.10
11.30
TYP
10.16
10.16
1.61
MAX.
10.34
10.34
1.78
MIN.
0.393
0.393
0.57
TYP.
0.400
0.400
0.63
MAX.
0.407
0.407
0.070
0.007
0.455
A
B
C
D
E
F
0.127
11.43
1.27
0.18
0.004
0.445
0.005
0.450
0.050
0.017
11.56
G
H
L
0.38
7.24
0.43
0.48
8.16
0.015
0.285
0.960
0.018
0.019
0.320
1.050
0.022
24.46
0.45
26.67
0.55
M
N
O
P
0.50
7.87
1.27
0.18
0.020
0.310
0.050
0.007
1.14
0.10
1.40
0.25
0.045
0.004
0.055
0.010
016032F
8/10
M54HCT245
Table 8: Revision History
Date
Revision
Description of Changes
15-Jun-2004
1
First Release
9/10
M54HCT245
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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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