M58LW032D110ZA6T [STMICROELECTRONICS]
32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory; 32兆位4Mb的X8 ， X16的2Mb ，统一座3V电源快闪记忆体
| 型号： | M58LW032D110ZA6T |
| 厂家： | 
ST |
| 描述： | 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory |
| 文件： | 总51页 (文件大小：703K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M58LW032D
32 Mbit (4Mb x8, 2Mb x16, Uniform Block)
3V Supply Flash Memory
FEATURES SUMMARY
■ WIDE x8 or x16 DATA BUS for HIGH
Figure 1. Packages
BANDWIDTH
■ SUPPLY VOLTAGE
– V = V
= 2.7 to 3.6V for Program, Erase
DDQ
DD
and Read operations
■ ACCESS TIME
– Random Read 90ns,110ns
– Page Mode Read 90ns/25ns, 110ns/25ns
■ PROGRAMMING TIME
TSOP56 (N)
14 x 20 mm
– 16 Word Write Buffer
– 12µs Word effective programming time
TBGA
■ 32 UNIFORM 64 KWord/128KByte MEMORY
BLOCKS
■ ENHANCED SECURITY
– Block Protection/ Unprotection
TBGA64 (ZA)
10 x 13 mm
– V
signal for Program Erase Enable
PEN
– 128 bit Protection Register with 64 bit Unique
Code in OTP area
■ PROGRAM and ERASE SUSPEND
■ 128 bit PROTECTION REGISTER
■ COMMON FLASH INTERFACE
■ 100, 000 PROGRAM/ERASE CYCLES per
BLOCK
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code M58LW032D: 0016h
September 2003
1/51
M58LW032D
TABLE OF CONTENTS
SUMMARY DESCRIPTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 3. TSOP56 Connections. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 4. TBGA64 Connections (Top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Figure 5. Block Addresses. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
SIGNAL DESCRIPTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Address Input (A0). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Address Inputs (A1-A21). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Data Inputs/Outputs (DQ0-DQ15). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Chip Enables (E0, E1, E2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Output Enable (G). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Write Enable (W). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Reset/Power-Down (RP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Byte/Word Organization Select (BYTE). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Status/(Ready/Busy) (STS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Program/Erase Enable (V
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
PEN
V
V
V
V
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
DD
Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
DDQ
Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
SS
Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
SSQ
Table 2. Device Enable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
BUS OPERATIONS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Bus Read. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Bus Read. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Bus Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Output Disable. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Power-Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Standby . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 3. Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
READ MODES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
COMMAND INTERFACE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Read Memory Array Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Read Electronic Signature Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Read Query Command.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Read Status Register Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Clear Status Register Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Block Erase Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Word/Byte Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Write to Buffer and Program Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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M58LW032D
Program/Erase Suspend Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Program/Erase Resume Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Block Protect Command.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Blocks Unprotect Command.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Protection Register Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Configure STS Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 4. Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 5. Configuration Codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 6. Read Electronic Signature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 6. Protection Register Memory Map. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 7. Word-Wide Read Protection Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 8. Byte-Wide Read Protection Register. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Table 9. Program, Erase Times and Program Erase Endurance Cycles . . . . . . . . . . . . . . . . . . . 20
STATUS REGISTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Program/Erase Controller Status (SR7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Erase Suspend Status (SR6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Erase Status (SR5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Program Status (SR4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
VPEN Status (SR3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Program Suspend Status (SR2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Block Protection Status (SR1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Reserved (SR0). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 10. Status Register Bits. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Table 11. Absolute Maximum Ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
DC and AC PARAMETERS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Table 12. Operating and AC Measurement Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 7. AC Measurement Input Output Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 8. AC Measurement Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Table 13. Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Table 14. DC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 9. Bus Read AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table 15. Bus Read AC Characteristics.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 10. Page Read AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Table 16. Page Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 11. Write AC Waveform, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table 17. Write AC Characteristics, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 12. Write AC Waveforms, Chip Enable Controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 18. Write AC Characteristics, Chip Enable Controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Figure 13. Reset, Power-Down and Power-Up AC Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Table 19. Reset, Power-Down and Power-Up AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 31
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M58LW032D
PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Figure 14. TSOP56 - 56 lead Plastic Thin Small Outline, 14 x 20 mm, Package Outline . . . . . . . 32
Table 20. TSOP56 - 56 lead Plastic Thin Small Outline, 14 x 20 mm, Package Mechanical Data 32
Figure 15. TBGA64 - 10x13mm, 8 x 8 ball array 1mm pitch, Package Outline . . . . . . . . . . . . . . . 33
Table 21. TBGA64 - 10x13mm, 8 x 8 ball array, 1 mm pitch, Package Mechanical Data. . . . . . . 33
PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Table 22. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
APPENDIX A. BLOCK ADDRESS TABLE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Table 23. Block Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
APPENDIX B. COMMON FLASH INTERFACE - CFI. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Table 24. Query Structure Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Table 25. CFI - Query Address and Data Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Table 26. CFI - Device Voltage and Timing Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Table 27. Device Geometry Definition. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Table 28. Block Status Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Table 29. Extended Query information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
APPENDIX C. FLOW CHARTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 16. Write to Buffer and Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . 40
Figure 17. Program Suspend & Resume Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . 41
Figure 18. Erase Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 19. Erase Suspend & Resume Flowchart and Pseudo Code. . . . . . . . . . . . . . . . . . . . . . . 43
Figure 20. Block Protect Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Figure 21. Block Unprotect Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Figure 22. Protection Register Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . 46
Figure 23. Command Interface and Program Erase Controller Flowchart (a) . . . . . . . . . . . . . . . . 47
Figure 24. Command Interface and Program Erase Controller Flowchart (b) . . . . . . . . . . . . . . . . 48
Figure 25. Command Interface and Program Erase Controller Flowchart (c). . . . . . . . . . . . . . . . 49
REVISION HISTORY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Table 30. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
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M58LW032D
SUMMARY DESCRIPTION
The M58LW032D is a 32 Mbit (4Mb x 8 or 2Mb
x16) non-volatile memory that can be read, erased
and reprogrammed. These operations can be per-
formed using a single low voltage (2.7V to 3.6V)
core supply.
operations. All blocks are protected during
power-up. The protection of the blocks is non-
volatile; after power-up the protection status of
each block is restored to the state when power
was last removed.
The memory is divided into 32 blocks of 1Mbit that
can be erased independently so it is possible to
preserve valid data while old data is erased. Pro-
gram and Erase commands are written to the
Command Interface of the memory. An on-chip
Program/Erase Controller simplifies the process of
programming or erasing the memory by taking
care of all of the special operations that are re-
quired to update the memory contents. The end of
a Program or Erase operation can be detected and
any error conditions identified in the Status Regis-
ter. The command set required to control the
memory is consistent with JEDEC standards.
The Write Buffer allows the microprocessor to pro-
gram from 1 to 16 Words in parallel, both speeding
up the programming and freeing up the micropro-
cessor to perform other work. A Word Program
command is available to program a single word.
Erase can be suspended in order to perform either
Read or Program in any other block and then re-
sumed. Program can be suspended to Read data
in any other block and then resumed. Each block
can be programmed and erased over 100,000 cy-
cles.
■ Program Erase Enable input V
, program or
PEN
erase operations are not possible when the
Program Erase Enable input V is low.
PEN
■ 128 bit Protection Register, divided into two 64
bit segments: the first contains a unique device
number written by ST, the second is user
programmable. The user programmable
segment can be protected.
The Reset/Power-Down pin is used to apply a
Hardware Reset to the enabled memory and to set
the device in power-down mode.
The device features an Auto Low Power mode. If
the bus becomes inactive during read operations,
the device automatically enters Auto Low Power
mode. In this mode the power consumption is re-
duced to the Auto Low Power supply current.
The STS signal is an open drain output that can be
used to identify the Program/Erase Controller sta-
tus. It can be configured in two modes: Ready/
Busy mode where a static signal indicates the sta-
tus of the P/E.C, and Status mode where a pulsing
signal indicates the end of a Program or Block
Erase operation. In Status mode it can be used as
a system interrupt signal, useful for saving CPU
time.
The M58LW032D has several security features to
increase data protection.
■ Block Protection, where each block can be
The memory is available in TSOP56 (14 x 20 mm)
and TBGA64 (10x13mm, 1mm pitch) packages.
individually protected against program or erase
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M58LW032D
Figure 2. Logic Diagram
Table 1. Signal Names
A0
Address input (used in X8 mode only)
V
V
DDQ
DD
A1-A21
BYTE
DQ0-DQ15
E0
Address inputs
Byte/Word Organization Select
Data Inputs/Outputs
Chip Enable
22
A0-A21
E1
Chip Enable
V
PEN
E2
Chip Enable
16
BYTE
W
G
Output Enable
DQ0-DQ15
RP
Reset/Power-Down
Status/(Ready/Busy)
Program/Erase Enable
Write Enable
M58LW032D
STS
STS
E0
E1
E2
G
V
PEN
W
V
Supply Voltage
DD
V
Input/Output Supply Voltage
Ground
DDQ
RP
V
SS
V
Input/Output Ground
Not Connected Internally
Do Not Use
SSQ
NC
DU
V
V
SS SSQ
AI06234b
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M58LW032D
Figure 3. TSOP56 Connections
NC
1
56
NC
W
E1
A21
A20
A19
A18
A17
A16
G
STS
DQ15
DQ7
DQ14
DQ6
V
V
DD
A15
A14
A13
A12
E0
SS
DQ13
DQ5
DQ12
DQ4
14
15
43
42
V
V
DDQ
SSQ
M58LW032D
V
PEN
RP
DQ11
DQ3
A11
A10
A9
DQ10
DQ2
A8
V
DD
V
DQ9
DQ1
DQ8
DQ0
A0
SS
A7
A6
A5
A4
A3
A2
A1
BYTE
NC
E2
28
29
AI06235
7/51
M58LW032D
Figure 4. TBGA64 Connections (Top view through package)
1
2
3
4
5
6
7
8
A
B
C
D
E
F
A1
A2
A6
A8
A9
V
A13
A14
V
A18
A19
NC
E1
PEN
E0
DD
V
DU
DU
SS
A3
A7
A10
A11
DQ9
DQ10
DQ2
A12
RP
A15
A20
A21
A17
STS
G
A4
A5
DQ1
DQ0
A0
DU
DU
A16
DQ8
DQ3
DQ11
DQ4
DQ12
DQ5
DQ13
DU
DQ15
DU
BYTE
NC
DU
G
H
V
DQ6
DQ14
DQ7
W
DDQ
E2
DU
V
V
V
NC
DD
SSQ
SS
AI06236b
8/51
M58LW032D
Figure 5. Block Addresses
Byte (x8) Bus Width
Word (x16) Bus Width
3FFFFFh
1FFFFFh
1 Mbit or
1 Mbit or
128 KBytes
64 KWords
3E0000h
3DFFFFh
1F0000h
1EFFFFh
1 Mbit or
1 Mbit or
128 KBytes
64 KWords
3C0000h
1E0000h
Total of 32
1 Mbit Blocks
03FFFFh
01FFFFh
1 Mbit or
1 Mbit or
128 KBytes
64 KWords
020000h
01FFFFh
010000h
00FFFFh
1 Mbit or
1 Mbit or
128 KBytes
64 KWords
000000h
000000h
AI06238b
Note: Also see Appendix A, Table 23 for a full listing of the Block Addresses
9/51
M58LW032D
SIGNAL DESCRIPTIONS
See Figure 2, Logic Diagram and Table 1, Signal
Names, for a brief overview of the signals connect-
ed to this device.
Address Input (A0). The A0 address input is
used to select the higher or lower Byte in X8 mode.
It is not used in X16 mode (where A1 is the Lowest
Significant bit).
Write Enable (W). The Write Enable input, W,
controls writing to the Command Interface, Input
Address and Data latches. Both addresses and
data can be latched on the rising edge of Write En-
able.
Reset/Power-Down (RP). The
Reset/Power-
Down pin can be used to apply a Hardware Reset
to the memory.
A Hardware Reset is achieved by holding Reset/
Power-Down Low, V , for at least t
Reset/Power-Down is Low, V , the Status Regis-
ter information is cleared and the power consump-
tion is reduced to power-down level. The device is
deselected and outputs are high impedance. If Re-
Address Inputs (A1-A21). The Address Inputs
are used to select the cells to access in the mem-
ory array during Bus Read operations either to
read or to program data to. During Bus Write oper-
ations they control the commands sent to the
Command Interface of the Program/Erase Con-
troller.
. When
IL
PLPH
IL
set/Power-Down goes low, V ,during a Block
IL
The device must be enabled (refer to Table 2, De-
vice Enable) when selecting the addresses. The
address inputs are latched on the rising edge of
Write Enable or on the first edge of Chip Enables
E0, E1 or E2 that disable the device, whichever
occurs first.
Erase, a Write to Buffer and Program or a Block
Protect/Unprotect the operation is aborted and the
data may be corrupted. In this case the STS pin
stays low, V , for a maximum timing of t
+ t
IL
PLPH
PH-
until the completion of the Reset/Power-Down
BH,
pulse.
Data Inputs/Outputs (DQ0-DQ15). The Data In-
puts/Outputs output the data stored at the selected
address during a Bus Read operation, or are used
to input the data during a program operation. Dur-
ing Bus Write operations they represent the com-
mands sent to the Command Interface of the
Program/Erase Controller. When used to input
data or Write commands they are latched on the
rising edge of Write Enable or the first edge of
Chip Enables E0, E1 or E2 that disable the device,
whichever occurs first.
After Reset/Power-Down goes High, V , the
memory will be ready for Bus Read and Bus Write
IH
operations after t
. Note that STS does not fall
PHQV
during a reset, see Ready/Busy Output section.
In an application, it is recommended to associate
Reset/Power-Down pin, RP, with the reset signal
of the microprocessor. Otherwise, if a reset opera-
tion occurs while the memory is performing an
Erase or Program operation, the memory may out-
put the Status Register information instead of be-
ing initialized to the default Asynchronous
Random Read.
When the device is enabled and Output Enable is
low, V (refer to Table 2, Device Enable), the data
IL
bus outputs data from the memory array, the Elec-
tronic Signature, the Block Protection status, the
CFI Information or the contents of the Status Reg-
ister. The data bus is high impedance when the
Byte/Word Organization Select (BYTE). The
Byte/Word Organization Select pin is used to
switch between the x8 and x16 bus widths of the
memory. When Byte/Word Organization Select is
device is deselected, Output Enable is high, V or
Low, V , the memory is in x8 mode, when it is
IH,
IL
the Reset/Power-Down signal is low, V . When
High, V , the memory is in x16 mode.
IL
IH
the Program/Erase Controller is active the Ready/
Busy status is given on DQ7.
Status/(Ready/Busy) (STS). The STS signal is
an open drain output that can be used to identify
the Program/Erase Controller status. It can be
configured in two modes:
Chip Enables (E0, E1, E2). The Chip Enable in-
puts E0, E1 and E2 activate the memory control
logic, input buffers, decoders and sense amplifi-
ers. The device is selected at the first edge of Chip
Enables E0, E1 or E2 that enable the device and
deselected at the first edge of Chip Enables E0,
E1 or E2 that disable the device. Refer to Table 2,
Device Enable for more details.
■ Ready/Busy - the pin is Low, V , during
OL
Program and Erase operations and high
impedance when the memory is ready for any
Read, Program or Erase operation.
■ Status - the pin gives a pulsing signal to indicate
the end of a Program or Block Erase operation.
When the Chip Enable inputs deselect the memo-
ry, power consumption is reduced to the Standby
After power-up or reset the STS pin is configured
in Ready/Busy mode. The pin can be configured
for Status mode using the Configure STS com-
mand.
When the Program/Erase Controller is idle, or sus-
pended, STS can float High through a pull-up re-
level, I
.
DD1
Output Enable (G). The Output Enable, G, gates
the outputs through the data output buffers during
a read operation. When Output Enable, G, is at V
IH
the outputs are high impedance.
10/51
M58LW032D
sistor. The use of an open-drain output allows the
STS pins from several memories to be connected
to a single pull-up resistor (a Low will indicate that
one, or more, of the memories is busy).
V
Supply Voltage. V
provides the power
DDQ
DDQ
supply to the I/O pins and enables all Outputs to
be powered independently from V . V can be
tied to V or can use a separate supply.
DD DDQ
DD
STS is not Low during a reset unless the reset was
applied when the Program/Erase controller was
active.
It is recommended to power-up and power-down
and V together to avoid any condition that
V
DD
DDQ
would result in data corruption.
V Ground. Ground, V is the reference for
SS
Program/Erase Enable (V ). The Program/
PEN
SS,
Erase Enable input, V
blocks, preventing Program and Erase operations
from affecting their data.
is used to protect all
the core power supply. It must be connected to the
system ground.
PEN,
V
Ground. V
ground is the reference for
SSQ
SSQ
Program/Erase Enable must be kept High during
all Program/Erase Controller operations, other-
wise the operations is not guaranteed to succeed
and data may become corrupt.
the input/output circuitry driven by V
. V
DDQ SSQ
must be connected to V
.
SS
Note: Each device in a system should have
and V decoupled with a 0.1µF ceramic
V
DD
DDQ
V
Supply Voltage. V
provides the power
DD
capacitor close to the pin (high frequency, in-
herently low inductance capacitors should be
as close as possible to the package). See Fig-
ure 8, AC Measurement Load Circuit.
DD
supply to the internal core of the memory device.
It is the main power supply for all operations
(Read, Program and Erase).
Table 2. Device Enable
E2
E1
E0
Device
Enabled
Disabled
Disabled
Disabled
Enabled
Enabled
Enabled
Disabled
V
V
V
V
V
V
V
IL
IL
IL
IL
IL
IL
IL
V
V
IH
V
V
V
IL
IH
V
IH
IH
V
V
V
V
V
IH
IH
IH
IH
IL
IL
V
V
V
IL
IH
V
IL
IH
IH
V
V
IH
Note: For single device operations, E2 and E1 can be connected to V
.
SS
11/51
M58LW032D
BUS OPERATIONS
There are five standard bus operations that control
the memory. Each of these is described in this
section, see Tables 3, Bus Operations, for a sum-
mary.
The Address Inputs are latched by the Command
Interface on the rising edge of Write Enable or the
first edge of E0, E1 or E2 that disables the device
(refer to Table 2, Device Enable).
On Power-up or after a Hardware Reset the mem-
ory defaults to Read Array mode (Page Read).
The Data Input/Outputs are latched by the Com-
mand Interface on the rising edge of Write Enable
or the first edge of E0, E1 or E2 that disables the
device whichever occurs first. Output Enable must
Typically glitches of less than 5ns on Chip Enable
or Write Enable are ignored by the memory and do
not affect bus operations.
remain High, V , during the Bus Write operation.
IH
See Figures 11, and 12, Write AC Waveforms, and
Tables 17 and 18, Write and Chip Enable Con-
trolled Write AC Characteristics, for details of the
timing requirements.
Bus Read. Bus Read operations are used to out-
put the contents of the Memory Array, the Elec-
tronic Signature, the Status Register, the Common
Flash Interface and the Block Protection Status.
Output Disable. The Data Inputs/Outputs are
A valid bus operation involves setting the desired
address on the Address inputs, enabling the de-
vice (refer to Table 2, Device Enable), applying a
high impedance when the Output Enable is at V .
IH
Power-Down. The memory is in Power-Down
mode when Reset/Power-Down, RP, is Low. The
power consumption is reduced to the Power-Down
Low signal, V , to Output Enable and keeping
IL
Write Enable High, V . The data read depends on
IH
the previous command written to the memory (see
Command Interface section).
See Figure 9, Bus Read AC Waveforms, and Ta-
ble 15, Bus Read AC Characteristics, for details of
when the output becomes valid.
Bus Write. Bus Write operations write Com-
mands to the memory or latch addresses and input
data to be programmed.
A valid Bus Write operation begins by setting the
desired address on the Address Inputs and en-
abling the device (refer to Chip Enable section).
level, I
, and the outputs are high impedance,
DD2
independent of Chip Enable, Output Enable or
Write Enable.
Standby. Standby disables most of the internal
circuitry, allowing a substantial reduction of the
current consumption. The memory is in standby
when Chip Enable is at V . The power consump-
tion is reduced to the standby level I
outputs are set to high impedance, independently
of the Output Enable or Write Enable inputs.
If Chip Enable switches to V during a program or
IH
and the
DD1
IH
erase operation, the device enters Standby mode
when finished.
Table 3. Bus Operations
E0, E1
DQ0-DQ15 (x16)
A1-A21 (x16)
A0-A21 (x8)
Bus Operation
G
W
RP
(1)
or E2
DQ0-DQ7 (x8)
V
V
V
V
Bus Read
Bus Write
Address
Data Output
Data Input
High Z
IL
IL
IH
IH
IH
IH
V
V
V
V
V
IH
Address
IL
IL
V
IL
V
IH
V
IH
Output Disable
Power-Down
Standby
X
X
X
V
X
X
X
High Z
IL
V
IH
V
IH
X
X
High Z
Note: 1. DQ8-DQ15 are High Z in x8 mode.
2. X = Don’t Care V or V
.
IH
IL
12/51
M58LW032D
READ MODES
Read operations in the M58LW032D are asyn-
chronous. The device outputs the data corre-
sponding to the address latched, that is the
memory array, Status Register, Common Flash In-
terface, Electronic Signature or Block Protection
Status depending on the command issued.
In Page Read mode a Page of data is internally
read and stored in a Page Buffer. Each memory
page is a 4 Words or 8 Bytes and has the same
A3-A21. In x8 mode only A0, A1 and A2 may
change, in x16 mode only A1 and A2 may change.
The first read operation within the Page has the
During read operations, if the bus is inactive for a
normal access time (t
), subsequent reads
AVQV
time equivalent to t
, the device automatically
within the same Page have much shorter access
times (t ). If the Page changes then the nor-
AVQV
enters Auto Low Power mode. In this mode the in-
ternal supply current is reduced to the Auto Low
AVQV1
mal, longer timings apply again.
Power supply current, I
puts will still output data if a Bus Read operation is
in progress.
. The Data Inputs/Out-
DD5
See Figure 10, Page Read AC Waveforms and
Table 16, Page Read AC Characteristics for de-
tails on when the outputs become valid.
Read operations can be performed in two different
ways, Random Read (where each Bus Read oper-
ation accesses a different Page) and Page Read.
13/51
M58LW032D
COMMAND INTERFACE
All Bus Write operations to the memory are inter-
preted by the Command Interface. Commands
consist of one or more sequential Bus Write oper-
ations. The Commands are summarized in Table
4, Commands. Refer to Table 4 in conjunction with
the text descriptions below.
The Status Register information is present on the
output data bus (DQ1-DQ7) when the device is en-
abled and Output Enable is Low, V .
IL
See the section on the Status Register and Table
10 for details on the definitions of the Status Reg-
ister bits
After power-up or a Reset operation the memory
enters Read mode.
Clear Status Register Command. The Clear Sta-
tus Register command can be used to reset bits
SR1, SR3, SR4 and SR5 in the Status Register to
‘0’. One Bus Write is required to issue the Clear
Status Register command.
The bits in the Status Register are sticky and do
not automatically return to ‘0’ when a new Write to
Buffer and Program, Erase, Block Protect, Block
Unprotect or Protection Register Program com-
mand is issued. If any error occurs then it is essen-
tial to clear any error bits in the Status Register by
issuing the Clear Status Register command before
attempting a new Program, Erase or Resume
command.
Block Erase Command. The Block Erase com-
mand can be used to erase a block. It sets all of
the bits in the block to ‘1’. All previous data in the
block is lost. If the block is protected then the
Erase operation will abort, the data in the block will
not be changed and the Status Register will output
the error.
Two Bus Write operations are required to issue the
command; the second Bus Write cycle latches the
block address and starts the Program/Erase Con-
troller. Once the command is issued subsequent
Bus Read operations read the Status Register.
See the section on the Status Register for details
on the definitions of the Status Register bits.
Read Memory Array Command. The Read Mem-
ory Array command is used to return the memory
to Read mode. One Bus Write cycle is required to
issue the Read Memory Array command and re-
turn the memory to Read mode. Once the com-
mand is issued the memory remains in Read
mode until another command is issued. From
Read mode Bus Read operations will access the
memory array. After power-up or a reset the mem-
ory defaults to Read Array mode (Page Read).
While the Program/Erase Controller is executing a
Program, Erase, Block Protect, Blocks Unprotect
or Protection Register Program operation the
memory will not accept the Read Memory Array
command until the operation completes.
Read Electronic Signature Command. The Read
Electronic Signature command is used to read the
Manufacturer Code, the Device Code, the Block
Protection Status and the Protection Register.
One Bus Write cycle is required to issue the Read
Electronic Signature command. Once the com-
mand is issued subsequent Bus Read operations
read the Manufacturer Code, the Device Code, the
Block Protection Status or the Protection Register
until another command is issued. Refer to Table 6,
Read Electronic Signature, Tables 7 and 8, Word
and Byte-wide Read Protection Register and Fig-
ure 6, Protection Register Memory Map for infor-
mation on the addresses.
Read Query Command. The Read Query Com-
mand is used to read data from the Common Flash
Interface (CFI) Memory Area. One Bus Write cycle
is required to issue the Read Query Command.
Once the command is issued subsequent Bus
Read operations read from the Common Flash In-
terface Memory Area. See Appendix B, Tables 24,
25, 26, 27, 28 and 29 for details on the information
contained in the Common Flash Interface (CFI)
memory area.
During the Erase operation the memory will only
accept the Read Status Register command and
the Program/Erase Suspend command. All other
commands will be ignored. Typical Erase times
are given in Table 9.
See Appendix C, Figure 18, Block Erase Flow-
chart and Pseudo Code, for a suggested flowchart
on using the Block Erase command.
Word/Byte Program Command. The
Word/
Byte Program command is used to program a sin-
gle Word or Byte in the memory array. Two Bus
Write operations are required to issue the com-
mand; the first write cycle sets up the Word Pro-
gram command, the second write cycle latches the
address and data to be programmed, and starts
the Program/Erase Controller.
If the block being programmed is protected an er-
ror will be set in the Status Register and the oper-
ation will abort without affecting the data in the
memory array. The block must be unprotected us-
ing the Blocks Unprotect command or by using the
Read Status Register Command. The Read Sta-
tus Register command is used to read the Status
Register. One Bus Write cycle is required to issue
the Read Status Register command. Once the
command is issued subsequent Bus Read opera-
tions read the Status Register until another com-
mand is issued.
14/51
M58LW032D
Blocks Temporary Unprotect feature of the Reset/
Power-Down pin, RP.
One Bus Write cycle is required to issue the Pro-
gram/Erase Suspend command and pause the
Program/Erase Controller. Once the command is
issued it is necessary to poll the Program/Erase
Controller Status bit (SR7) to find out when the
Program/Erase Controller has paused; no other
commands will be accepted until the Program/
Erase Controller has paused. After the Program/
Erase Controller has paused, the memory will con-
tinue to output the Status Register until another
command is issued.
During the polling period between issuing the Pro-
gram/Erase Suspend command and the Program/
Erase Controller pausing it is possible for the op-
eration to complete. Once the Program/Erase
Controller Status bit (SR7) indicates that the Pro-
gram/Erase Controller is no longer active, the Pro-
gram Suspend Status bit (SR2) or the Erase
Suspend Status bit (SR6) can be used to deter-
mine if the operation has completed or is suspend-
ed. For timing on the delay between issuing the
Program/Erase Suspend command and the Pro-
gram/Erase Controller pausing see Table 9.
During Program/Erase Suspend the Read Memo-
ry Array, Read Status Register, Read Electronic
Signature, Read Query and Program/Erase Re-
sume commands will be accepted by the Com-
mand Interface. Additionally, if the suspended
operation was Erase then the Write to Buffer and
Program, and the Program Suspend commands
will also be accepted. When a program operation
is completed inside a Block Erase Suspend the
Read Memory Array command must be issued to
reset the device in Read mode, then the Erase Re-
sume command can be issued to complete the
whole sequence. Only the blocks not being erased
may be read or programmed correctly.
Write to Buffer and Program Command. The
Write to Buffer and Program command is used to
program the memory array.
Up to 16 Words/32 Bytes can be loaded into the
Write Buffer and programmed into the memory.
Each Write Buffer has the same A5-A21 address-
es. In Byte-wide mode only A0-A4 may change in
Word-wide mode only A1-A4 may change, in .
Four successive steps are required to issue the
command.
1. One Bus Write operation is required to set up
the Write to Buffer and Program Command. Is-
sue the set up command with the selected
memory Block Address where the program op-
eration should occur (any address in the block
where the values will be programmed can be
used). Any Bus Read operations will start to out-
put the Status Register after the 1st cycle.
2. Use one Bus Write operation to write the same
block address along with the value N on the
Data Inputs/Output, where N+1 is the number of
Words/Bytes to be programmed.
3. Use N+1 Bus Write operations to load the ad-
dress and data for each Word into the Write
Buffer. See the constraints on the address com-
binations listed below. The addresses must
have the same A5-A21.
4. Finally, use one Bus Write operation to issue the
final cycle to confirm the command and start the
Program operation.
Invalid address combinations or failing to follow
the correct sequence of Bus Write cycles will set
an error in the Status Register and abort the oper-
ation without affecting the data in the memory ar-
ray. The Status Register should be cleared before
re-issuing the command.
If the block being programmed is protected an er-
ror will be set in the Status Register and the oper-
ation will abort without affecting the data in the
memory array. The block must be unprotected us-
ing the Blocks Unprotect command.
See Appendix C, Figure 17, Program Suspend &
Resume Flowchart and Pseudo Code, and Figure
19, Erase Suspend & Resume Flowchart and
Pseudo Code, for suggested flowcharts on using
the Program/Erase Suspend command.
Program/Erase Resume Command. The
gram/Erase Resume command can be used to re-
start the Program/Erase Controller after
Pro-
a
See Appendix C, Figure 16, Write to Buffer and
Program Flowchart and Pseudo Code, for a sug-
gested flowchart on using the Write to Buffer and
Program command.
Program/Erase Suspend operation has paused it.
One Bus Write cycle is required to issue the Pro-
gram/Erase Resume command. Once the com-
mand is issued subsequent Bus Read operations
read the Status Register.
Program/Erase Suspend Command. The
Pro-
gram/Erase Suspend command is used to pause a
Word/Byte Program, Write to Buffer and Program
or Erase operation. The command will only be ac-
cepted during a Program or an Erase operation. It
can be issued at any time during an Erase opera-
tion but will only be accepted during a Word Pro-
gram or Write to Buffer and Program command if
the Program/Erase Controller is running.
Block Protect Command. The Block Protect
command is used to protect a block and prevent
Program or Erase operations from changing the
data in it. Two Bus Write cycles are required to is-
sue the Block Protect command; the second Bus
Write cycle latches the block address and starts
the Program/Erase Controller. Once the command
is issued subsequent Bus Read operations read
15/51
M58LW032D
the Status Register. See the section on the Status
Register for details on the definitions of the Status
Register bits.
During the Block Protect operation the memory will
only accept the Read Status Register command.
All other commands will be ignored. Typical Block
Protection times are given in Table 9.
The Block Protection bits are non-volatile, once
set they remain set through reset and power-
down/power-up. They are cleared by a Blocks Un-
protect command.
See Appendix C, Figure 20, Block Protect Flow-
chart and Pseudo Code, for a suggested flowchart
on using the Block Protect command.
Blocks Unprotect Command. The Blocks Un-
protect command is used to unprotect all of the
blocks. Two Bus Write cycles are required to issue
the Blocks Unprotect command; the second Bus
Write cycle starts the Program/Erase Controller.
Once the command is issued subsequent Bus
Read operations read the Status Register. See the
section on the Status Register for details on the
definitions of the Status Register bits.
The user-programmable segment can be locked
by programming bit 1 of the Protection Register
Lock location to ‘0’ (see Table 7 and x for Word-
wide and Byte-wide protection addressing). Bit 0
of the Protection Register Lock location locks the
factory programmed segment and is programmed
to ‘0’ in the factory. The locking of the Protection
Register is not reversible, once the lock bits are
programmed no further changes can be made to
the values stored in the Protection Register, see
Figure 6, Protection Register Memory Map. At-
tempting to program a previously protected Pro-
tection Register will result in a Status Register
error.
The Protection Register Program cannot be sus-
pended. See Appendix C, Figure 22, Protection
Register Program Flowchart and Pseudo Code,
for the flowchart for using the Protection Register
Program command.
Configure STS Command.
The Configure STS command is used to configure
the Status/(Ready/Busy) pin. After power-up or re-
set the STS pin is configured in Ready/Busy
mode. The pin can be configured in Status mode
using the Configure STS command (refer to Sta-
tus/(Ready/Busy) section for more details.
During the Block Unprotect operation the memory
will only accept the Read Status Register com-
mand. All other commands will be ignored. Typical
Block Protection times are given in Table 9.
See Appendix C, Figure 21, Block Unprotect Flow-
chart and Pseudo Code, for a suggested flowchart
on using the Block Unprotect command.
Two write cycles are required to issue the Config-
ure STS command.
■ The first bus cycle sets up the Configure STS
command.
■ The second specifies one of the four possible
configurations (refer to Table 5, Configuration
Codes):
Protection Register Program Command. The
Protection Register Program command is used to
Program the 64 bit user segment of the Protection
Register. Two write cycles are required to issue
the Protection Register Program command.
– Ready/Busy mode
– Pulse on Erase complete mode
– Pulse on Program complete mode
– Pulse on Erase or Program complete mode
■ The first bus cycle sets up the Protection
Register Program command.
■ The second latches the Address and the Data to
be written to the Protection Register and starts
the Program/Erase Controller.
Read operations output the Status Register con-
tent after the programming has started.
The device will not accept the Configure STS com-
mand while the Program/Erase controller is busy
or during Program/Erase Suspend. When STS pin
is pulsing it remains Low for a typical time of
250ns. Any invalid Configuration Code will set an
error in the Status Register.
16/51
M58LW032D
Table 4. Commands
Command
Bus Operations
1st Cycle
2nd Cycle
Addr.
Subsequent
Final
Op. Addr. Data Op.
Data Op. Addr. Data Op. Addr. Data
Read Memory Array
≥ 2 Write
X
FFh Read
RA
RD
(2)
(2)
Read Electronic Signature ≥ 2 Write
X
X
X
X
X
90h Read
70h Read
98h Read
50h
IDA
IDD
Read Status Register
Read Query
2
Write
X
SRD
(3)
(3)
≥ 2 Write
QA
QD
Clear Status Register
Block Erase
1
2
Write
Write
20h Write
BA
PA
D0
PD
40h
Word/Byte Program
2
Write
X
Write
10h
Write to Buffer and
Program
4 + N Write BA E8h Write
BA
N
Write PA PD Write
X
D0h
Program/Erase Suspend
Program/Erase Resume
Block Protect
1
1
2
2
Write
Write
Write
Write
X
X
X
X
B0h
D0h
60h Write
60h Write
BA
X
01h
D0h
Blocks Unprotect
Protection Register
Program
2
2
Write
Write
X
X
C0h Write
B8h Write
PRA
X
PRD
CC
Configure STS command
Note: 1. X Don’t Care; RA Read Address, RD Read Data, IDA Identifier Address, IDD Identifier Data, SRD Status Register Data, PA Program
Address; PD Program Data, QA Query Address, QD Query Data, BA Any address in the Block, PRA Protection register address,
PRD Protection Register Data, CC Configuration Code.
2. For Identifier addresses and data refer to Table 6, Read Electronic Signature.
3. For Query Address and Data refer to Appendix B, CFI.
Table 5. Configuration Codes
Configuration
DQ1 DQ2
Mode
STS Pin
Description
Code
V
during P/E
The STS pin is Low during Program and
Erase operations and high impedance when
the memory is ready for any Read, Program
or Erase operation.
OL
operations
Hi-Z when the
memory is ready
00h
0
0
Ready/Busy
Pulse on Erase
complete
Supplies a system interrupt pulse at the end
of a Block Erase operation.
01h
02h
0
1
1
0
Pulse Low then
High when
Pulse on
Program
complete
Supplies a system interrupt pulse at the end
of a Program operation.
operation
(2)
completed
Pulse on Erase
or Program
complete
Supplies a system interrupt pulse at the end
of a Block Erase or Program operation.
03h
1
1
Note: 1. DQ2-DQ7 are reserved
2. When STS pin is pulsing it remains Low for a typical time of 250ns.
17/51
M58LW032D
Table 6. Read Electronic Signature
(3)
Code
Bus Width
Data (DQ15-DQ0)
Address (A21-A1)
x8
x16
x8
20h
0020h
16h
Manufacturer Code
000000h
Device Code
000001h
x16
0016h
00h (Block Unprotected)
01h (Block Protected)
x8
(1)
Block Protection Status
Protection Register
SBA +02h
0000h (Block Unprotected)
0001h (Block Protected)
x16
(2)
(1)
x8, x16
000080h
PRD
Note: 1. SBA is the Start Base Address of each block, PRD is Protection Register Data.
2. Base Address, refer to Figure 6 and Tables 7 and 8 for more information.
3. A0 is not used in Read Electronic Signature in either x8 or x16 mode. The data is always presented on the lower byte in x16 mode.
Figure 6. Protection Register Memory Map
WORD
ADDRESS
88h
User Programmable
85h
84h
Unique device number
81h
Protection Register Lock
1
0
80h
AI05501
Table 7. Word-Wide Read Protection Register
Word
Use
Factory, User
Factory (Unique ID)
Factory (Unique ID)
Factory (Unique ID)
Factory (Unique ID)
User
A8
1
A7
0
A6
0
A5
0
A4
0
A3
0
A2
0
A1
0
Lock
0
1
2
3
4
5
6
7
1
0
0
0
0
0
0
1
1
0
0
0
0
0
1
0
1
0
0
0
0
0
1
1
1
0
0
0
0
1
0
0
1
0
0
0
0
1
0
1
User
1
0
0
0
0
1
1
0
User
1
0
0
0
0
1
1
1
User
1
0
0
0
1
0
0
0
18/51
M58LW032D
Table 8. Byte-Wide Read Protection Register
Word
Use
Factory, User
Factory, User
Factory (Unique ID)
Factory (Unique ID)
Factory (Unique ID)
Factory (Unique ID)
Factory (Unique ID)
Factory (Unique ID)
Factory (Unique ID)
Factory (Unique ID)
User
A8
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
A7
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
A6
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
A5
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
A4
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
A3
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
A2
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
A1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
Lock
Lock
0
1
2
3
4
5
6
7
8
9
User
A
User
B
User
C
D
E
User
User
User
F
User
19/51
M58LW032D
Table 9. Program, Erase Times and Program Erase Endurance Cycles
M58LW032D
Parameters
Unit
(1,2)
(2)
Min
Typ
Max
(4)
Block (1Mb) Erase
1.2
s
s
4.8
(4)
Chip Program (Write to Buffer)
Chip Erase Time
24
37
72
110
576
(4)
(4)
s
(3)
Program Write Buffer
µs
192
Word/Byte Program Time
(Word/Byte Program command)
(4)
16
µs
48
(5)
(5)
(5)
(5)
Program Suspend Latency Time
Erase Suspend Latency Time
Block Protect Time
1
1
µs
µs
µs
20
25
30
1.2
18
0.75
Blocks Unprotect Time
Program/Erase Cycles (per block)
Data Retention
s
100,000
20
cycles
years
Note: 1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Effective byte programming time 6µs, effective word programming time 12µs.
4. Maximum value measured at worst case conditions for both temperature and V after 100,000 program/erase cycles.
DD
5. Maximum value measured at worst case conditions for both temperature and V
.
DD
20/51
M58LW032D
STATUS REGISTER
The Status Register provides information on the
current or previous Program, Erase, Block Protect
or Blocks Unprotect operation. The various bits in
the Status Register convey information and errors
on the operation. They are output on DQ7-DQ0.
To read the Status Register the Read Status Reg-
ister command can be issued. The Status Register
is automatically read after Program, Erase, Block
Protect, Blocks Unprotect and Program/Erase Re-
sume commands. The Status Register can be
read from any address.
The contents of the Status Register can be updat-
ed during an Erase or Program operation by tog-
gling the Output Enable pin or by dis-activating
and then reactivating the device (refer to Table 2,
Device Enable).
Status Register bits SR5, SR4, SR3 and SR1 are
associated with various error conditions and can
only be reset with the Clear Status Register com-
mand. The Status Register bits are summarized in
Table 10, Status Register Bits. Refer to Table 10
in conjunction with the following text descriptions.
pleted its operation; when the bit is High, V , a
OH
Program/Erase Suspend command has been is-
sued and the memory is waiting for a Program/
Erase Resume command.
When a Program/Erase Resume command is is-
sued the Erase Suspend Status bit returns Low.
Erase Status (SR5). The Erase Status bit can be
used to identify if the memory has failed to verify
that the block has erased correctly or that all
blocks have been unprotected successfully. The
Erase Status bit should be read once the Program/
Erase Controller Status bit is High (Program/Erase
Controller inactive).
When the Erase Status bit is Low, V , the mem-
OL
ory has successfully verified that the block has
erased correctly or all blocks have been unprotect-
ed successfully. When the Erase Status bit is
High, V , the erase operation has failed. De-
OH
pending on the cause of the failure other Status
Register bits may also be set to High, V
.
OH
■ If only the Erase Status bit (SR5) is set High,
, then the Program/Erase Controller has
V
OH
Program/Erase Controller Status (SR7). The Pro-
gram/Erase Controller Status bit indicates whether
the Program/Erase Controller is active or inactive.
When the Program/Erase Controller Status bit is
applied the maximum number of pulses to the
block and still failed to verify that the block has
erased correctly or that all the blocks have been
unprotected successfully.
Low, V , the Program/Erase Controller is active
and all other Status Register bits are High Imped-
OL
■ If the failure is due to an erase or blocks
unprotect with V
bit (SR3) is also set High, V
low, V , then V
Status
PEN
OL
PEN
ance; when the bit is High, V , the Program/
OH
.
OH
Erase Controller is inactive.
■ If the failure is due to an erase on a protected
The Program/Erase Controller Status is Low im-
mediately after a Program/Erase Suspend com-
mand is issued until the Program/Erase Controller
pauses. After the Program/Erase Controller paus-
es the bit is High.
block then Block Protection Status bit (SR1) is
also set High, V
.
OH
■ If the failure is due to a program or erase
incorrect command sequence then Program
Status bit (SR4) is also set High, V
.
OH
During Program, Erase, Block Protect and Blocks
Unprotect operations the Program/Erase Control-
ler Status bit can be polled to find the end of the
operation. The other bits in the Status Register
should not be tested until the Program/Erase Con-
troller completes the operation and the bit is High.
After the Program/Erase Controller completes its
operation the Erase Status, Program Status and
Block Protection Status bits should be tested for
errors.
Once set High, the Erase Status bit can only be re-
set Low by a Clear Status Register command or a
hardware reset. If set High it should be reset be-
fore a new Program or Erase command is issued,
otherwise the new command will appear to fail.
Program Status (SR4). The Program Status bit
is used to identify a Program or Block Protect fail-
ure. The Program Status bit should be read once
the Program/Erase Controller Status bit is High
(Program/Erase Controller inactive).
Erase Suspend Status (SR6). The Erase Sus-
pend Status bit indicates that an Erase operation
has been suspended and is waiting to be re-
sumed. The Erase Suspend Status should only be
considered valid when the Program/Erase Con-
troller Status bit is High (Program/Erase Controller
inactive); after a Program/Erase Suspend com-
mand is issued the memory may still complete the
operation rather than entering the Suspend mode.
When the Program Status bit is Low, V , the
OL
memory has successfully verified that the Write
Buffer has programmed correctly or the block is
protected. When the Program Status bit is High,
V
, the program or block protect operation has
OH
failed. Depending on the cause of the failure other
Status Register bits may also be set to High, V
.
OH
■ If only the Program Status bit (SR4) is set High,
, then the Program/Erase Controller has
V
OH
When the Erase Suspend Status bit is Low, V
,
OL
applied the maximum number of pulses to the
the Program/Erase Controller is active or has com-
21/51
M58LW032D
byte and still failed to verify that the Write Buffer
has programmed correctly or that the Block is
protected.
ation has been suspended and is waiting to be re-
sumed. The Program Suspend Status should only
be considered valid when the Program/Erase
Controller Status bit is High (Program/Erase Con-
troller inactive); after a Program/Erase Suspend
command is issued the memory may still complete
the operation rather than entering the Suspend
mode.
■ If the failure is due to a program or block protect
with V
is also set High, V
low, V , then V
Status bit (SR3)
PEN
OL
PEN
.
OH
■ If the failure is due to a program on a protected
block then Block Protection Status bit (SR1) is
When the Program Suspend Status bit is Low,
also set High, V
.
OH
V
, the Program/Erase Controller is active or has
OL
■ If the failure is due to a program or erase
completed its operation; when the bit is High, V
,
OH
incorrect command sequence then Erase
a Program/Erase Suspend command has been is-
sued and the memory is waiting for a Program/
Erase Resume command.
When a Program/Erase Resume command is is-
sued the Program Suspend Status bit returns Low.
Block Protection Status (SR1). The Block Pro-
tection Status bit can be used to identify if a Pro-
gram or Erase operation has tried to modify the
contents of a protected block.
Status bit (SR5) is also set High, V
.
OH
Once set High, the Program Status bit can only be
reset Low by a Clear Status Register command or
a hardware reset. If set High it should be reset be-
fore a new Program or Erase command is issued,
otherwise the new command will appear to fail.
V
Status (SR3). The V
Status bit can be
PEN
PEN
used to identify if a Program, Erase, Block Protec-
tion or Block Unprotection operation has been at-
When the Block Protection Status bit is Low, V
,
OL
tempted when V
is Low, V .
IL
PEN
no Program or Erase operations have been at-
tempted to protected blocks since the last Clear
Status Register command or hardware reset;
When the V
Status bit is Low, V , no Pro-
OL
PEN
gram, Erase, Block Protection or Block Unprotec-
tion operations have been attempted with V
PEN
when the Block Protection Status bit is High, V
,
OH
Low, V , since the last Clear Status Register com-
IL
a Program (Program Status bit SR4 set High) or
Erase (Erase Status bit SR5 set High) operation
has been attempted on a protected block.
mand, or hardware reset. When the V
Status
PEN
bit is High, V , a Program, Erase, Block Protec-
OH
tion or Block Unprotection operation has been at-
Once set High, the Block Protection Status bit can
only be reset Low by a Clear Status Register com-
mand or a hardware reset. If set High it should be
reset before a new Program or Erase command is
issued, otherwise the new command will appear to
fail.
tempted with V
Once set High, the V
set by a Clear Status Register command or a hard-
ware reset. If set High it should be reset before a
new Program, Erase, Block Protection or Block
Unprotection command is issued, otherwise the
new command will appear to fail.
Low, V .
PEN
IL
Status bit can only be re-
PEN
Reserved (SR0). Bit SR0 of the Status Register
is reserved. Its value should be masked.
Program Suspend Status (SR2). The Program
Suspend Status bit indicates that a Program oper-
22/51
M58LW032D
Table 10. Status Register Bits
OPERATION
Result
SR1
SR7
SR6
SR5
SR4
SR3
SR2
(Hex)
Program/Erase Controller active
Write Buffer not ready
0
0
1
1
1
1
Hi-Z
Hi-Z
N/A
N/A
Write Buffer ready
0
1
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
0
0
0
0
80h
C0h
84h
C4h
Write Buffer ready in Erase Suspend
Program suspended
Program suspended in Erase Suspend
Program/Block Protect completed
successfully
1
1
1
1
1
0
1
0
1
0
0
0
1
1
0
0
0
1
1
1
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
80h
C0h
B0h
F0h
98h
Program completed successfully in Erase
Suspend
Program/Block protect failure due to incorrect
command sequence
Program failure due to incorrect command
sequence in Erase Suspend
Program/Block Protect failure due to V
error
PEN
Program failure due to V
Suspend
error in Erase
PEN
1
1
1
1
0
1
0
0
0
1
1
1
1
0
0
0
0
0
0
1
1
D8h
92h
D2h
Program failure due to Block Protection
Program failure due to Block Protection in
Erase Suspend
Program/Block Protect failure due to cell
failure
1
0
0
1
0
0
0
90h
Program failure due to cell failure in Erase
Suspend
1
1
1
1
1
0
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
D0h
C0h
80h
Erase Suspended
Erase/Blocks Unprotect completed
successfully
Erase/Blocks Unprotect failure due to
incorrect command sequence
1
0
1
1
0
0
0
B0h
Erase/Blocks Unprotect failure due to V
error
PEN
1
1
1
0
0
0
1
1
1
0
0
0
1
0
0
0
0
0
0
1
0
A8h
A2h
A0h
Erase failure due to Block Protection
Erase/Blocks Unprotect failure due to failed
cells in Block
Configure STS error due to invalid
configuration code
1
0
1
1
0
0
0
B0h
23/51
M58LW032D
MAXIMUM RATING
Stressing the device above the ratings listed in Ta-
ble 11, Absolute Maximum Ratings, may cause
permanent damage to the device. These are
stress ratings only and operation of the device at
these or any other conditions above those indicat-
ed in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rat-
ing conditions for extended periods may affect de-
vice
reliability.
Refer
also
to
the
STMicroelectronics SURE Program and other rel-
evant quality documents.
Table 11. Absolute Maximum Ratings
Value
Symbol
Parameter
Unit
Min
–40
–55
–0.6
–0.6
Max
125
150
T
Temperature Under Bias
°C
°C
V
BIAS
T
Storage Temperature
Input or Output Voltage
Supply Voltage
STG
V
V
+0.6
IO
DDQ
V
, V
DDQ
5.0
V
DD
(1)
I
Output Short-circuit Current
mA
OSC
100
Note: 1. Maximum one output short-circuited at a time and for no longer than 1 second.
24/51
M58LW032D
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC characteristics Tables that follow, are de-
rived from tests performed under the Measure-
ment Conditions summarized in Table 12,
Operating and AC Measurement Conditions. De-
signers should check that the operating conditions
in their circuit match the measurement conditions
when relying on the quoted parameters.
Table 12. Operating and AC Measurement Conditions
Parameter
M58LW032D
Min
Units
Max
3.6
3.6
70
Supply Voltage (V
)
2.7
2.7
0
V
V
DD
Input/Output Supply Voltage (V
)
DDQ
Grade 1
Grade 6
°C
°C
pF
V
Ambient Temperature (T )
A
–40
85
Load Capacitance (C )
30
L
0 to V
Input Pulses Voltages
DDQ
0.5 V
Input and Output Timing Ref. Voltages
V
DDQ
Figure 7. AC Measurement Input Output
Waveform
Figure 8. AC Measurement Load Circuit
1.3V
1N914
V
DDQ
V
DD
3.3kΩ
V
DDQ
0.5 V
DDQ
DEVICE
UNDER
TEST
DQ
S
0V
C
L
AI00610
0.1µF
0.1µF
C
includes JIG capacitance
L
AI03459
Table 13. Capacitance
Symbol
Parameter
Test Condition
Typ
6
Max
8
Unit
pF
pF
C
IN
V
= 0V
= 0V
Input Capacitance
Output Capacitance
IN
C
OUT
V
OUT
8
12
Note: 1. T = 25°C, f = 1 MHz
A
2. Sampled only, not 100% tested.
25/51
M58LW032D
Table 14. DC Characteristics
Symbol
Parameter
Test Condition
Min
Max
±1
±5
20
29
40
40
40
Unit
µA
I
0V ≤ V ≤ V
Input Leakage Current
LI
IN
DDQ
I
LO
0V ≤ V ≤ V
OUT DDQ
Output Leakage Current
µA
I
E = V , f=5MHz
Supply Current (Random Read)
Supply Current (Page Read)
Supply Current (Standby)
mA
mA
µA
DD
IL
I
E = V , f=33MHz
DDO
IL
I
E = V , RP = V
DD1
IH
IH
I
E = V , RP = V
Supply Current (Auto Low-Power)
Supply Current (Reset/Power-Down)
µA
DD5
IL
IH
I
RP = V
µA
DD2
IL
Supply Current (Program or Erase,
Block Protect, Block Unprotect)
Program or Erase operation in
progress
I
30
mA
µA
DD3
Supply Current
(Erase/Program Suspend)
I
E = V
40
DD4
IH
V
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
–0.5
2
0.8
V
V
V
V
IL
V
IH
V
+ 0.5
DDQ
V
I
= 100µA
0.2
3.6
OL
OL
V
I
= –100µA
V
–0.2
OH
OH
DDQ
V
DD
Supply Voltage (Erase and
V
LKO
2
V
V
Program lockout)
V
PEN
Supply Voltage (block erase,
V
2.7
PENH
program and block protect)
26/51
M58LW032D
Figure 9. Bus Read AC Waveforms
tAVAV
VALID
A0-A21
tELQV
tELQX
tAXQX
(1)
E2, E1, E0
tGLQV
tGLQX
tEHQZ
tEHQX
G
tELBL
(2)
BYTE
tBLQV
tGHQZ
tGHQX
tBLQZ
tAVQV
DQ0-DQ15
OUTPUT
AI06239b
Note: 1. V = Device Disabled (first edge of E0, E1 or E2), V = Device Enabled (first edge of E0, E1 or E2). Refer to Table 2 for more
IH
IL
details.
2. BYTE can be Low or High.
Table 15. Bus Read AC Characteristics.
M58LW032D
Symbol
Parameter
Test Condition
Unit
90
90
90
0
110
110
110
0
t
E = V , G = V
IL
Address Valid to Address Valid
Min
Max
Min
ns
ns
ns
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
AVAV
IL
IL
IL
IL
IL
t
E = V , G = V
Address Valid to Output Valid
AVQV
IL
t
E = V , G = V
Address Transition to Output Transition
Byte Low (or High) to Output Valid
Byte Low (or High) to Output Hi-Z
Chip Enable High to Output Transition
Chip Enable High to Output Hi-Z
Chip Enable Low to Byte Low (or High)
Chip Enable Low to Output Transition
Chip Enable Low to Output Valid
Output Enable High to Output Transition
Output Enable High to Output Hi-Z
Output Enable Low to Output Transition
Output Enable Low to Output Valid
AXQX
IL
t
E = V , G = V
Max
Max
Min
1
1
BLQV
IL
t
E = V , G = V
1
1
BLQZ
IL
t
G = V
0
0
EHQX
IL
t
G = V
Max
Max
Min
25
10
0
25
10
0
EHQZ
IL
t
G = V
ELBL
IL
t
G = V
ELQX
IL
t
G = V
Max
Min
90
0
110
0
ELQV
IL
t
E = V
GHQX
IL
t
E = V
Max
Min
15
0
15
0
GHQZ
IL
t
E = V
GLQX
IL
t
E = V
Max
25
25
GLQV
IL
27/51
M58LW032D
Figure 10. Page Read AC Waveforms
A1-A2
VALID
VALID
A3-A21
VALID
tAVQV
tELQV
tELQX
tAXQX
(1)
E2, E1, E0
tAVQV1
tAXQX1
tGLQV
tGLQX
tEHQZ
tEHQX
G
tGHQZ
tGHQX
DQ0-DQ15
OUTPUT
OUTPUT
AI06240
Note: 1. V = Device Disabled (first edge of E0, E1 or E2), V = Device Enabled (first edge of E0, E1 or E2). Refer to Table 2 for more
IH
IL
details.
Table 16. Page Read AC Characteristics
M58LW032D
Symbol
Parameter
Test Condition
Unit
90 - 110
t
E = V , G = V
Address Transition to Output Transition
Address Valid to Output Valid
Min
6
ns
ns
AXQX1
IL
IL
IL
t
E = V , G = V
Max
25
AVQV1
IL
Note: For other timings see Table 15, Bus Read AC Characteristics.
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M58LW032D
Figure 11. Write AC Waveform, Write Enable Controlled
A0-A21
VALID
tAVWH
tWHAX
(1)
E2, E1, E0
tELWL
tGHWL
tWHEH
G
tWLWH
tWHWL
tWHGL
W
tDVWH
INPUT
DQ0-DQ15
tWHDX
STS
(Ready/Busy mode)
tVPHWH
tWHBL
V
PEN
AI06241
Note: 1. V = Device Disabled (first edge of E0, E1 or E2), V = Device Enabled (first edge of E0, E1 or E2). Refer to Table 2 for more
IH
IL
details.
Table 17. Write AC Characteristics, Write Enable Controlled
M58LW032D
Symbol
Parameter
Test Condition
Unit
90 - 110
t
E = V
E = V
Address Valid to Write Enable High
Min
Min
Min
Min
Min
Max
Min
Min
Min
Min
Min
Min
50
50
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AVWH
IL
IL
t
Data Input Valid to Write Enable High
Chip Enable Low to Write Enable Low
Program/Erase Enable High to Write Enable High
Write Enable High to Address Transition
Write Enable High to Status/(Ready/Busy) low
Write Enable High to Input Transition
Write Enable High to Chip Enable High
Output Enable High to Write Enable Low
Write Enable High to Output Enable Low
Write Enable High to Write Enable Low
Write Enable Low to Write Enable High
DVWH
t
ELWL
t
0
VPHWH
t
E = V
E = V
0
WHAX
IL
IL
t
500
0
WHBL
t
WHDX
t
0
WHEH
t
20
35
30
70
GHWL
t
WHGL
t
WHWL
t
E = V
WLWH
IL
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M58LW032D
Figure 12. Write AC Waveforms, Chip Enable Controlled
A0-A21
W
VALID
tAVEH
tEHAX
tWLEL
tGHEL
tEHWH
G
E2, E1, E0
DQ0-DQ15
tELEH
tEHEL
tEHGL
(1)
tDVEH
INPUT
tEHDX
tEHBL
STS
(Ready/Busy mode)
tVPHEH
V
PEN
AI06242
Note: 1. V = Device Disabled (first edge of E0, E1 or E2), V = Device Enabled (first edge of E0, E1 or E2). Refer to Table 2 for more
IH
IL
details.
Table 18. Write AC Characteristics, Chip Enable Controlled.
M58LW032D
Symbol
Parameter
Test Condition
Unit
90 - 110
t
W = V
W = V
Address Valid to Chip Enable High
Min
Min
Min
Min
Min
Max
Min
Min
Min
Min
Min
Min
50
50
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AVEH
IL
t
Data Input Valid to Chip Enable High
Write Enable Low to Chip Enable Low
Program/Erase Enable High to Chip Enable High
Chip Enable High to Address Transition
Chip Enable High to Status/(Ready/Busy) low
Chip Enable High to Input Transition
Chip Enable High to Write Enable High
Output Enable High to Chip Enable Low
Chip Enable High to Output Enable Low
Chip Enable High to Chip Enable Low
Chip Enable Low to Chip Enable High
DVEH
IL
t
WLEL
t
0
VPHEH
t
W = V
W = V
0
EHAX
IL
t
500
0
EHBL
t
EHDX
IL
t
0
EHWH
t
20
35
30
70
GHEL
t
EHGL
t
EHEL
t
W = V
ELEH
IL
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M58LW032D
Figure 13. Reset, Power-Down and Power-Up AC Waveform
W
tPHWL
(1)
E2, E1, E0 , G
DQ0-DQ15
tPHQV
STS
(Ready/Busy mode)
tPLBH
RP
tVDHPH
tPLPH
V
, V
DD DDQ
Power-Up
and Reset
Reset during
Program or Erase
AI06217b
Note: 1. V = Device Disabled (first edge of E0, E1 or E2), V = Device Enabled (first edge of E0, E1 or E2). Refer to Table 2 for more
IH
IL
details.
Table 19. Reset, Power-Down and Power-Up AC Characteristics
M58LW032D
Symbol
Parameter
Unit
90
130
1
110
150
1
t
Reset/Power-Down High to Data Valid
Max
Max
Min
ns
µs
ns
µs
µs
PHQV
t
Reset/Power-Down High to Write Enable Low
Reset/Power-Down Low to Reset/Power-Down High
Reset/Power-Down Low to Status/(Ready/Busy) High
Supply Voltages High to Reset/Power-Down High
PHWL
t
100
30
0
100
30
0
PLPH
t
Max
Min
PLBH
t
VDHPH
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M58LW032D
PACKAGE MECHANICAL
Figure 14. TSOP56 - 56 lead Plastic Thin Small Outline, 14 x 20 mm, Package Outline
A2
1
N
e
E
B
N/2
D1
D
A
CP
DIE
C
TSOP-a
A1
α
L
Note: Drawing is not to scale.
Table 20. TSOP56 - 56 lead Plastic Thin Small Outline, 14 x 20 mm, Package Mechanical Data
mm
Min
inches
Min
Symbol
Typ
Max
1.20
0.15
1.05
0.27
0.21
20.20
18.50
14.10
–
Typ
Max
0.0472
0.0059
0.0413
0.0106
0.0083
0.7953
0.7283
0.5551
–
A
A1
A2
B
0.05
0.95
0.17
0.10
19.80
18.30
13.90
–
0.0020
0.0374
0.0067
0.0039
0.7795
0.7205
0.5472
–
C
D
D1
E
e
0.50
0.0197
L
0.50
0°
0.70
5°
0.0197
0°
0.0276
5°
α
N
56
56
CP
0.10
0.0039
32/51
M58LW032D
Figure 15. TBGA64 - 10x13mm, 8 x 8 ball array 1mm pitch, Package Outline
D
D1
FD
FE
SD
SE
E
E1
ddd
BALL "A1"
A
e
b
A2
A1
BGA-Z23
Note: Drawing is not to scale.
Table 21. TBGA64 - 10x13mm, 8 x 8 ball array, 1 mm pitch, Package Mechanical Data
millimeters
Min
inches
Min
Symbol
Typ
Max
1.200
0.350
0.850
0.500
10.100
–
Typ
Max
A
A1
A2
b
0.0472
0.300
0.200
0.0118
0.0079
0.0138
0.0335
0.400
9.900
–
0.0157
0.3898
–
0.0197
D
10.000
7.000
0.3937
0.2756
0.3976
D1
ddd
e
–
0.100
–
0.0039
1.000
13.000
7.000
1.500
3.000
0.500
0.500
–
0.0394
0.5118
0.2756
0.0591
0.1181
0.0197
0.0197
–
–
E
12.900
13.100
–
0.5079
0.5157
E1
FD
FE
SD
SE
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
33/51
M58LW032D
PART NUMBERING
Table 22. Ordering Information Scheme
Example:
M58LW032D
110
N
1
T
Device Type
M58
Architecture
L = Page Mode
Operating Voltage
W = V = V
= 2.7V to 3.6V
DDQ
DD
Device Function
032D = 32 Mbit (x8, x16), Uniform Block
Speed
110 = 110ns
90 = 90ns
Package
N = TSOP56: 14 x 20 mm
ZA = TBGA64: 10 x 13 mm, 1mm pitch
Temperature Range
1 = 0 to 70 °C
6 = –40 to 85 °C
Option
Blank = Standard Packing
T = Tape & Reel Packing
E = Lead-free Package, Standard Packing
F = Lead-free Package, Tape & Reel Packing
Note: Devices are shipped from the factory with the memory content bits erased to ’1’.
For a list of available options (Speed, Package, etc.) or for further information on any aspect of this device,
please contact the ST Sales Office nearest to you.
34/51
M58LW032D
APPENDIX A. BLOCK ADDRESS TABLE
Table 23. Block Addresses
Block
Number
Address Range
(x8 Bus Width)
Address Range
(x16 Bus Width)
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
3E0000h-3FFFFFh
3C0000h-3DFFFFh
3A0000h-3BFFFFh
380000h-39FFFFh
360000h-37FFFFh
340000h-35FFFFh
320000h-33FFFFh
300000h-31FFFFh
2E0000h-2FFFFFh
2C0000h-2DFFFFh
2A0000h-2BFFFFh
280000h-29FFFFh
260000h-27FFFFh
240000h-25FFFFh
220000h-23FFFFh
200000h-21FFFFh
1E0000h-1FFFFFh
1C0000h-1DFFFFh
1A0000h-1BFFFFh
180000h-19FFFFh
160000h-17FFFFh
140000h-15FFFFh
120000h-13FFFFh
100000h-11FFFFh
0E0000h-0FFFFFh
0C0000h-0DFFFFh
0A0000h-0BFFFFh
080000h-09FFFFh
060000h-07FFFFh
040000h-05FFFFh
020000h-03FFFFh
000000h-01FFFFh
1F0000h-1FFFFFh
1E0000h-1EFFFFh
1D0000h-1DFFFFh
1C0000h-1CFFFFh
1B0000h-1BFFFFh
1A0000h-1AFFFFh
190000h-19FFFFh
180000h-18FFFFh
170000h-17FFFFh
160000h-16FFFFh
150000h-15FFFFh
140000h-14FFFFh
130000h-13FFFFh
120000h-12FFFFh
110000h-11FFFFh
100000h-10FFFFh
0F0000h-0FFFFFh
0E0000h-0EFFFFh
0D0000h-0DFFFFh
0C0000h-0CFFFFh
0B0000h-0BFFFFh
0A0000h-0AFFFFh
090000h-09FFFFh
080000h-08FFFFh
070000h-07FFFFh
060000h-06FFFFh
050000h-05FFFFh
040000h-04FFFFh
030000h-03FFFFh
020000h-02FFFFh
010000h-01FFFFh
000000h-00FFFFh
8
7
6
5
4
3
2
1
35/51
M58LW032D
APPENDIX B. COMMON FLASH INTERFACE - CFI
The Common Flash Interface is a JEDEC ap-
proved, standardized data structure that can be
read from the Flash memory device. It allows a
system software to query the device to determine
various electrical and timing parameters, density
information and functions supported by the mem-
ory. The system can interface easily with the de-
vice, enabling the software to upgrade itself when
necessary.
When the CFI Query Command (RCFI) is issued
the device enters CFI Query mode and the data
structure is read from the memory. Tables 24, 25,
26, 27, 28 and 29 show the addresses used to re-
trieve the data.
Table 24. Query Structure Overview
Address
Sub-section Name
Description
(4)
x16
x8
0000h
0001h
0010h
001Bh
0027h
00h
02h
20h
36h
4Eh
Manufacturer Code
Device Code
CFI Query Identification String
System Interface Information
Device Geometry Definition
Command set ID and algorithm data offset
Device timing and voltage information
Flash memory layout
Primary Algorithm-specific Extended
Query Table
Additional information specific to the Primary
Algorithm (optional)
(1)
(2)
P(h)
A(h)
Alternate Algorithm-specific Extended Additional information specific to the Alternate
Query Table
Algorithm (optional)
(SBA+02)h
Block Status Register
Block-related Information
Note: 1. Offset 15h defines P which points to the Primary Algorithm Extended Query Address Table.
2. Offset 19h defines A which points to the Alternate Algorithm Extended Query Address Table.
3. SBA is the Start Base Address for each block.
4. In x8 mode, A0 must be set to V , otherwise 00h will be output.
IL
Table 25. CFI - Query Address and Data Output
Address
Data
Description
(3)
x16
x8
0010h
0011h
0012h
0013h
0014h
0015h
0016h
0017h
0018h
0019h
20h
22h
24h
26h
28h
2Ah
2Ch
2Eh
30h
32h
51h
52h
59h
"Q"
"R"
"Y"
51h; "Q"
52h; "R"
59h; "Y"
Query ASCII String
Primary Vendor:
01h
00h
31h
00h
00h
00h
00h
Command Set and Control Interface ID Code
Primary algorithm extended Query Address Table: P(h)
Alternate Vendor:
Command Set and Control Interface ID Code
Alternate Algorithm Extended Query address Table
(2)
34h
00h
001Ah
Note: 1. Query Data are always presented on DQ7-DQ0. DQ15-DQ8 are set to '0'.
2. Offset 19h defines A which points to the Alternate Algorithm Extended Query Address Table.
3. In x8 mode, A0 must be set to V , otherwise 00h will be output.
IL
36/51
M58LW032D
Table 26. CFI - Device Voltage and Timing Specification
Address
Data
Description
(4)
x16
x8
(1)
(1)
(2)
(2)
V
V
V
V
Min, 2.7V
001Bh
001Ch
001Dh
001Eh
001Fh
0020h
0021h
0022h
0023h
0024h
0025h
0026h
36h
38h
3Ah
DD
DD
PP
PP
27h
36h
00h
00h
max, 3.6V
min – Not Available
max – Not Available
3Ch
3Eh
40h
42h
44h
46h
48h
4Ah
4Ch
n
04h
2 µs typical time-out for Word, DWord prog – Not Available
n
08h
0Ah
2 µs, typical time-out for max buffer write
n
2 ms, typical time-out for Erase Block
(3)
n
00h
2 ms, typical time-out for chip erase – Not Available
n
04h
04h
04h
2 x typical for Word Dword time-out max – Not Available
n
2 x typical for buffer write time-out max
n
2 x typical for individual block erase time-out maximum
(3)
n
00h
2 x typical for chip erase max time-out – Not Available
Note: 1. Bits are coded in Binary Code Decimal, bit7 to bit4 are scaled in Volts and bit3 to bit0 in mV.
2. Bit7 to bit4 are coded in Hexadecimal and scaled in Volts while bit3 to bit0 are in Binary Code Decimal and scaled in 100mV.
3. Not supported.
4. In x8 mode, A0 must be set to V , otherwise 00h will be output.
IL
Table 27. Device Geometry Definition
Address
Data
Description
(1)
x16
x8
n
0027h
4Eh
16h
n where 2 is number of bytes memory Size
Device Interface
0028h
0029h
002Ah
002Bh
002Ch
002Dh
002Eh
002Fh
0030h
50h
52h
54h
56h
58h
5Ah
5Ch
5Eh
60h
02h
00h
05h
00h
01h
1Fh
00h
00h
02h
Organization Sync./Async.
n
Maximum number of bytes in Write Buffer, 2
Bit7-0 = number of Erase Block Regions in device
Number (n-1) of Erase Blocks of identical size; n=64
Erase Block Region Information
x 256 bytes per Erase block (128K bytes)
Note: 1. In x8 mode, A0 must be set to V , otherwise 00h will be output.
IL
37/51
M58LW032D
Table 28. Block Status Register
Address
Data
Selected Block Information
Block Unprotected
0
1
0
bit0
Block Protected
(3)
(1,2)
Last erase operation ended successfully
(BA+2)h
bit1
(3)
1
0
Last erase operation not ended successfully
Reserved for future features
bit7-2
Note: 1. BA specifies the block address location, A21-A17.
2. In x8 mode, A0 must be set to V , otherwise 00h will be output.
IL
3. Not Supported.
38/51
M58LW032D
Table 29. Extended Query information
Address
Data (Hex)
Description
(2)
offset
(P)h
x16
x8
0031h
0032h
0033h
0034h
0035h
0036h
0037h
0038h
62h
64h
66h
68h
6Ah
6Ch
6Eh
70h
50h
52h
49h
"P"
"R"
"Y"
(P+1)h
(P+2)h
(P+3)h
(P+4)h
(P+5)h
(P+6)h
(P+7)h
Query ASCII string - Extended Table
31h
31h
CEh
00h
00h
Major version number
Minor version number
Optional Feature: (1=yes, 0=no)
bit0, Chip Erase Supported (0=no)
bit1, Suspend Erase Supported (1=yes)
bit2, Suspend Program Supported (1=yes)
bit3, Protect/Unprotect Supported (1=yes)
bit4, Queue Erase Supported (0=no)
bit5, Instant Individual Block locking (0=no)
bit6, Protection bits supported (1=yes)
bit7, Page Read supported (1=yes)
bit8, Synchronous Read supported (0 =no)
bits 9 to 31 reserved for future use
(P+8)h
0039h
72h
00h
Function allowed after Suspend:
(P+9)h
003Ah
74h
01h
Program allowed after Erase Suspend (1=yes)
Bits 7-1 reserved for future use
Block Status Register
(P+A)h
(P+B)h
003Bh
003Ch
76h
78h
01h
00h
bit0, Block Protect Bit status active (1=yes)
bit1, Block Lock-Down Bit status active (not supported)
bits 2 to 15 Reserved for future use
V
V
OPTIMUM Program/Erase voltage conditions
OPTIMUM Program/Erase voltage conditions
(P+C)h
(P+D)h
(P+E)h
(P+F)h
(P+10)h
(P+11)h
003Dh
003Eh
003Fh
0040h
0041h
0042h
7Ah
7Ch
7Eh
80h
82h
84h
33h
00h
01h
80h
00h
03h
DD
PP
OTP protection: No. of Protection Register fields
Protection Register’s start address, least significant bits
Protection Register’s start address, most significant bits
n
n where 2 is number of factory reprogrammed bytes
n
(P+12)h
0043h
86h
03h
03h
00h
n where 2 is number of user programmable bytes
n
(P+13)h
(P+14)h
(P+15)h
0044h
0045h
0046h
88h
8Ah
8Ch
Page Read: 2 Bytes (n = bits 0-7)
Synchronous mode configuration fields
Reserved for future use
Note: 1. Bit7 to bit4 are coded in Hexadecimal and scaled in Volt while bit3 to bit0 are in Binary Code Decimal and scaled in mV.
2. In x8 mode, A0 must be set to V , otherwise 00h will be output.
IL
39/51
M58LW032D
APPENDIX C. FLOW CHARTS
Figure 16. Write to Buffer and Program Flowchart and Pseudo Code
Start
Write to Buffer E8h
Command, Block Address
Read Status
Register
NO
NO
YES
Write to Buffer
Timeout
SR7 = 1
YES
(1)
Note 1: N+1 is number of Words
to be programmed
Write N
,
Block Address
Try Again Later
Write Buffer Data,
Start Address
X = 0
YES
X = N
NO
Write Next Buffer Data,
Next Program Address
Note 2: Next Program Address must
have same A5-A21.
(2)
X = X + 1
Program Buffer to Flash
Confirm D0h
Read Status
Register
NO
SR7 = 1
YES
Note 3: A full Status Register Check must be
done to check the program operation's
success.
Full Status
Register Check
(3)
End
AI05511
40/51
M58LW032D
Figure 17. Program Suspend & Resume Flowchart and Pseudo Code
Start
Write B0h
Program/Erase Suspend Command:
– write B0h
– write 70h
Write 70h
do:
Read Status
Register
– read status register
NO
NO
SR7 = 1
YES
while SR7 = 1
If SR2 = 0, Program completed
SR2 = 1
YES
Program Complete
Read Memory Array command:
– write FFh
Write FFh
– one or more data reads
from other blocks
Read data from
another block
Program Erase Resume Command:
– write D0h
to resume erasure
– if the program operation completed
then this is not necessary. The device
returns to Read Array as normal
(as if the Program/Erase Suspend
command was not issued).
Write D0h
Write FFh
Read Data
Program Continues
AI00612b
41/51
M58LW032D
Figure 18. Erase Flowchart and Pseudo Code
Start
Erase command:
– write 20h
Write 20h
– write D0h to Block Address
(A12-A17)
(memory enters read Status
Register after the Erase command)
Write D0h to
Block Address
NO
do:
Read Status
– read status register
– if Program/Erase Suspend command
given execute suspend erase loop
Register
Suspend
YES
NO
Suspend
Loop
SR7 = 1
while SR7 = 1
YES
NO
NO
NO
NO
V
Invalid
Error (1)
If SR3 = 1, V
invalid error:
PEN
PEN
– error handler
SR3 = 0
YES
Command
Sequence Error
If SR4, SR5 = 1, Command Sequence error:
– error handler
SR4, SR5 = 0
YES
Erase
Error (1)
If SR5 = 1, Erase error:
– error handler
SR5 = 0
YES
Erase to Protected
Block Error
If SR1 = 1, Erase to Protected Block Error:
– error handler
SR1 = 0
YES
End
AI00613C
Note: 1. If an error is found, the Status Register must be cleared (Clear Status Register Command) before further Program or Erase oper-
ations.
42/51
M58LW032D
Figure 19. Erase Suspend & Resume Flowchart and Pseudo Code
Start
Write B0h
Program/Erase Suspend Command:
– write B0h
– write 70h
Write 70h
do:
– read status register
Read Status
Register
NO
NO
SR7 = 1
YES
while SR7 = 1
If SR6 = 0, Erase completed
SR6 = 1
YES
Erase Complete
Read Memory Array command:
– write FFh
Write FFh
– one or more data reads
from other blocks
Read data from
another block
or Program
Program/Erase Resume command:
– write D0h to resume the Erase
operation
– if the Program operation completed
then this is not necessary. The device
returns to Read mode as normal
(as if the Program/Erase suspend
was not issued).
Write D0h
Write FFh
Read Data
Erase Continues
AI00615b
43/51
M58LW032D
Figure 20. Block Protect Flowchart and Pseudo Code
Start
Write 60h
Block Address
Block Protect Command
– write 60h, Block Adress
– write 01h, Block Adress
Write 01h
Block Address
do:
Read Status Register
– read status register
NO
SR7 = 1
while SR7 = 1
YES
YES
SR3 = 1
NO
V
Invalid Error
If SR3 = 1, V
Invalid Error
PEN
PEN
YES
YES
Invalid Command
Sequence Error
If SR4 = 1, SR5 = 1 Invalid Command Sequence
Error
SR4, SR5 = 1,1
NO
Block Protect
Error
If SR4 = 1, Block Protect Error
SR4 = 1
NO
Write FFh
Read Memory Array Command:
– write FFh
Block Protect
Sucessful
AI06157b
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M58LW032D
Figure 21. Block Unprotect Flowchart and Pseudo Code
Start
Write 60h
Blocks Unprotect Command
– write 60h, Block Adress
– write D0h, Block Adress
Write D0h
do:
Read Status Register
– read status register
NO
SR7 = 1
while SR7 = 1
YES
YES
SR3 = 1
NO
V
Invalid Error
PEN
If SR3 = 1, V
Invalid Error
PEN
YES
YES
Invalid Command
Sequence Error
If SR4 = 1, SR5 = 1 Invalid Command
Sequence Error
SR4, SR5 = 1,1
NO
Blocks Unprotect
Error
If SR5 = 1, Blocks Unprotect Error
SR5 = 1
NO
Write FFh
Read Memory Array Command:
– write FFh
Blocks Unprotect
Sucessful
AI06158b
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M58LW032D
Figure 22. Protection Register Program Flowchart and Pseudo Code
Start
Write C0h
Protection Register Program Command
– write C0h
– write Protection Register Address,
Protection Register Data
Write
PR Address, PR Data
do:
Read Status Register
– read status register
NO
SR7 = 1
YES
while SR7 = 1
YES
YES
If SR3 = 1, SR4 = 1 V
Invalid Error
PEN
V
Invalid Error
SR3, SR4 = 1,1
NO
PEN
Protection Register
Program Error
If SR1 = 0, SR4 = 1 Protection Register
Program Error
SR1, SR4 = 0,1
NO
YES
Protection Register
Program Error
If SR1 = 1, SR4 = 1 Program Error due to
Protection Register Protection
SR1, SR4 = 1,1
NO
Write FFh
Read Memory Array Command:
– write FFh
PR Program
Sucessful
AI06159b
Note: PR = Protection Register
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M58LW032D
Figure 23. Command Interface and Program Erase Controller Flowchart (a)
WAIT FOR
COMMAND
WRITE
NO
90h
YES
READ
SIGNATURE
NO
98h
YES
CFI
QUERY
NO
70h
YES
READ
ARRAY
READ
STATUS
NO
50h
YES
CLEAR
STATUS
NO
E8h
YES
PROGRAM
BUFFER
LOAD
NO
(1)
20h
YES
ERASE
NO
FFh
YES
SET-UP
NO
D0h
NO
YES
C
PROGRAM
COMMAND
ERROR
D0h
YES
ERASE
COMMAND
ERROR
A
B
AI03618
Note 1. The Erase command (20h) can only be issued if the flash is not already in Erase Suspend.
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M58LW032D
Figure 24. Command Interface and Program Erase Controller Flowchart (b)
A
B
ERASE
(READ STATUS)
Program/Erase Controller
Status bit in the Status
Register
YES
READ
STATUS
READY
?
NO
READ
NO
ARRAY
B0h
YES
YES
READ
STATUS
NO
FFh
ERASE
SUSPEND
NO
YES
ERASE
SUSPENDED
READY
?
NO
READ
STATUS
YES
WAIT FOR
COMMAND
WRITE
YES
YES
YES
YES
READ
STATUS
70h
NO
READ
SIGNATURE
90h
NO
CFI
QUERY
98h
NO
PROGRAM
BUFFER
LOAD
E8h
NO
NO
PROGRAM
COMMAND
ERROR
YES
READ
STATUS
D0h
D0h
NO
(ERASE RESUME)
YES
READ
ARRAY
c
AI03619
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M58LW032D
Figure 25. Command Interface and Program Erase Controller Flowchart (c).
B
C
PROGRAM
(READ STATUS)
YES
Program/Erase Controller
Status bit in the Status
Register
READ
STATUS
READY
?
NO
READ
ARRAY
NO
B0h
YES
YES
NO
READ
STATUS
FFh
PROGRAM
SUSPEND
NO
YES
PROGRAM
SUSPENDED
READY
?
NO
YES
WAIT FOR
COMMAND
WRITE
READ
STATUS
YES
YES
YES
NO
READ
STATUS
70h
NO
READ
SIGNATURE
90h
NO
CFI
QUERY
98h
NO
YES
READ
ARRAY
READ
STATUS
D0h
(PROGRAM RESUME)
AI00618
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M58LW032D
REVISION HISTORY
Table 30. Document Revision History
Date
Version
Revision Details
04-Jun-2002
-01
First Issue
Revision numbering modified: a minor revision will be indicated by incrementing the
digit after the dot, and a major revision, by incrementing the digit before the dot.
(revision version 01 becomes 1.0).
16-Jun-2002
06-Aug-2002
1.1
2.0
Figure 5 modified. t
and t
modified in Table 17.
WHDX
WHAX
Device Code changed, Word Effective Programming Time modified, V
range
DDQ
modified (esp. in Tables 12 and 22, and V
removed from note 1 below Table 9).
DDQ
Block Erase and Program Write Buffer Time parameters modified in Table 9.
90ns Speed Class added (Table 15, 16, 17, 18, 19 and 22 modified accordingly).
Figure 2, Logic Diagram modified. V , V
, V and V
pin descriptions
DD
DDQ
SS
SSQ
modified. Document status changed from Product Preview to Preliminary Data.
A0 Address Line described separately from others (A1-A21) in Table 1 and in
“SIGNAL DESCRIPTIONS” paragraph. Address Lines modified in Table 3, Bus
Operations. Byte signal added to Figure 9, Bus Read AC Waveforms, timings t
,
ELBL
t
t
and t
added to Table 15, Bus Read AC Characteristics, timings t
and
14-Oct-2002
2.1
BLQV
ELLH
BLQZ
AVLH
removed from Table 18, Write AC Characteristics, Chip Enable Controlled. Chip
Enable Controlled. “Write 70h” removed from flowchart Figures 17 and 19. Table 3,
Bus operations, clarified. REVISION HISTORY moved to after the appendices.
Table 9, Program, Erase Times and Program Erase Endurance Cycles table modified.
Table 6, Read Electronic Signature table clarified. Certain DU connections changed to
NC in Table 4, TBGA64 Connections (Top view through package). x8 Address
modified in Table 24, Query Structure Overview. Note regarding A0 value in x8 mode
added to all CFI Tables. Block Protect setup command address modified in Table 4,
Commands. Data and Descriptions clarified in CFI Table 29, Extended Query
16-Dec-2002
2.2
information. I
clarified and I
parameter added to Absolute Maximum Ratings table. I and V
and V
OSC
DD
LKO
parameters added to DC Characteristics table. t
PENH PHWL
DDO
parameter added to Reset, Power-Down and Power-Up AC Waveforms figure and
Characteristics table.
Summary Description clarified, Bus Operations clarified, READ MODES section
added, Status Register bit nomenclature modified, V
Flowcharts. Lead-free packing options added to Ordering Information Scheme.
Invalid Error clarified in
30-May-2003
12-Sep-2003
2.3
2.4
PEN
t
and t minimum values modified in Table 18, Write AC Characteristics, Chip
EHAX
EHDX
Enable Controlled.
Full datasheet.
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M58LW032D
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
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