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MJE3055T [STMICROELECTRONICS]

COMPLEMENTARY SILICON POWER TRANSISTORS; 互补硅功率晶体管
MJE3055T
型号： MJE3055T
厂家： ST    ST
描述：

COMPLEMENTARY SILICON POWER TRANSISTORS
互补硅功率晶体管

晶体 晶体管 功率双极晶体管 开关 局域网
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MJE2955T  
MJE3055T  
COMPLEMENTARY SILICON POWER TRANSISTORS  
■
■
SGS-THOMSON PREFERRED SALESTYPES  
COMPLEMENTARY PNP - NPN DEVICES  
DESCRIPTION  
The MJE3055T is a silicon epitaxial-base NPN  
transistor in Jedec TO-220 package. It is  
intended for power switching circuits and  
general-purpose amplifiers. The complementary  
PNP type is MJE2955T.  
3
2
1
TO-220  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (IB = 0)  
Collector-Base Voltage (IE = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
60  
V
V
70  
5
V
10  
A
IB  
Base Current  
6
75  
A
o
Ptot  
Total Power Dissipation at Tcase ≤ 25 C  
Storage Temperature  
W
oC  
oC  
Tstg  
Tj  
-55 to 150  
150  
Max. Operating Junction Temperature  
For PNP types voltage and current values are negative.  
1/4  
June 1997  
MJE2955T / MJE3055T  
THERMAL DATA  
Rthj-case Thermal Resistance Junction-case  
Max  
1.66  
oC/W  
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)  
Symbol  
Parameter  
Test Conditions  
VCE = 30 V  
Min.  
Typ.  
Max.  
Unit  
ICEO  
Collector Cut-off  
Current (IB = 0)  
700  
µA  
ICEX  
ICBO  
IEBO  
Collector Cut-off  
Current (VBE = 1.5V)  
VCE = 70 V  
CASE = 150oC  
1
5
mA  
mA  
T
Collector Cut-off  
Current (IE = 0)  
VCBO = 70 V  
CASE = 150oC  
1
10  
mA  
mA  
T
Emitter Cut-off Current VEBO = 5 V  
(IC = 0)  
5
mA  
VCEO(sus) Collector-Emitter  
Sustaining Voltage  
IC = 200 mA  
60  
V
VCE(sat)  
VBE(on)  
hFE  
Collector-Emitter  
Sustaining Voltage  
IC = 4 A  
IC = 10 A  
IB = 0.4 A  
IB = 3.3 A  
1.1  
8
V
V
Base-Emitter on  
Voltage  
IC = 4 A  
VCE = 4 V  
1.8  
V
DC Current Gain  
IC = 4 A  
IC = 10 A  
VCE = 4 V  
VCE = 4 V  
20  
5
70  
fT  
Transistor Frequency  
IC = 500 mA  
f = 500 KHz  
VCE = 10 V  
2
MHz  
Pulsed: Pulse duration = 300µs, duty cycle ≤ 2 %  
For PNP type voltage and current values are negative.  
2/4  
MJE2955T / MJE3055T  
TO-220 MECHANICAL DATA  
mm  
inch  
DIM.  
MIN.  
4.40  
1.23  
2.40  
TYP.  
MAX.  
4.60  
1.32  
2.72  
MIN.  
0.173  
0.048  
0.094  
TYP.  
MAX.  
0.181  
0.051  
0.107  
A
C
D
D1  
E
1.27  
0.050  
0.49  
0.61  
1.14  
1.14  
4.95  
2.4  
0.70  
0.88  
1.70  
1.70  
5.15  
2.7  
0.019  
0.024  
0.044  
0.044  
0.194  
0.094  
0.393  
0.027  
0.034  
0.067  
0.067  
0.203  
0.106  
0.409  
F
F1  
F2  
G
G1  
H2  
L2  
L4  
L5  
L6  
L7  
L9  
DIA.  
10.0  
10.40  
16.4  
0.645  
13.0  
2.65  
15.25  
6.2  
14.0  
2.95  
15.75  
6.6  
0.511  
0.104  
0.600  
0.244  
0.137  
0.147  
0.551  
0.116  
0.620  
0.260  
0.154  
0.151  
3.5  
3.93  
3.85  
3.75  
L2  
Dia.  
L5  
L9  
L7  
L6  
L4  
P011C  
3/4  
MJE2955T / MJE3055T  
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the  
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No  
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned  
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.  
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express  
written approval of SGS-THOMSON Microelectonics.  
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved  
SGS-THOMSON Microelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -  
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A  
. . .  
4/4  

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