MSC81325M [STMICROELECTRONICS]
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS; 射频与微波晶体管航空电子应用
| 型号： | MSC81325M |
| 厂家： | 
ST |
| 描述： | RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
| 文件： | 总3页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MSC81325M
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
PRELIMINARY DATA
.
.
.
.
.
.
.
REFRACTORY/GOLD METALLIZATION
EMITTER BALLASTED
RUGGEDIZED VSWR :1
∞
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT
325 W MIN. WITH 6.7 dB GAIN
=
.400 x .400 2NLFL (S042)
hermetically sealed
ORDER CODE
BRANDING
81325M
MSC81325M
PIN CONNECTION
DESCRIPTION
The MSC81325M device is a high power pulsed
transistor specifically designed for DME/TACAN
avionics applications.
This device is capable of withstanding an infinite
load VSWR at any phase angle under full rated
conditions. Low RF thermal resistance and semi-
automatic bonding techniques ensure high relia-
bility and product consistency.
The MSC81325M is housed in the industry-stand-
ard AMPAC™ metal/ceramic hermetic package
with internal input/output matching structures.
1. Collector
2. Base
3. Emitter
4. Base
°
= 25 C)
ABSOLUTE MAXIMUM RATINGS (T
case
Symbol
PDISS
IC
Parameter
Value
880
24
Unit
Power Dissipation*
Device Current*
(TC ≤ 100˚C)
W
A
VCC
TJ
Collector-Supply Voltage*
55
V
°
Junction Temperature (Pulsed RF Operation)
Storage Temperature
250
C
C
°
TSTG
65 to +200
−
THERMAL DATA
°
C/W
RTH(j-c)
Junction-Case Thermal Resistance*
0.17
*Applies only to rated RF amplifier operation
1/3
October 1992
MSC81325M
°
= 25 C)
ELECTRICAL SPECIFICATIONS (T
case
STATIC
Value
Symbol
Test Conditions
Unit
Min. Typ.
Max.
—
BVCBO
BVEBO
BVCER
ICES
IC = 10mA
IE = 1mA
IC = 25mA
VBE = 0V
VCE = 5V
IE = 0mA
IC = 0mA
RBE = 10Ω
VCE = 50V
IC = 1A
65
3.5
65
—
—
—
—
—
—
V
V
—
—
V
25
mA
—
hFE
15
120
DYNAMIC
Symbol
POUT
Value
Test Conditions
Unit
Min.
325
40
Typ. Max.
f = 1025 — 1150 MHz PIN 70 W
VCC 50 V
360
41
—
—
—
W
%
=
=
η
c
f = 1025 — 1150 MHz PIN 70 W
VCC 50 V
=
=
GP
f = 1025 — 1150 MHz PIN 70 W
VCC 50 V
6.7
7.1
dB
=
=
Note:
Pulse Width
10 Sec
µ
=
=
Duty Cycle
1%
TEST CIRCUIT
All dimensions are in inches.
Ref.: Dwg. No. C127471
2/3
MSC81325M
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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