PD54008 [STMICROELECTRONICS]
RF POWER TRANSISTORS The LdmoST Plastic FAMILY; RF功率晶体管的LDMOST塑料系列
| 型号： | PD54008 |
| 厂家： | 
ST |
| 描述： | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
| 文件： | 总10页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD54008 - PD54008S
RF POWER TRANSISTORS
LdmoST
The
Plastic FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 8 W with 10 dB gain @ 500 MHz / 7.5V
• NEW RF PLASTIC PACKAGE
PowerSO-10RF
(Formed Lead)
ORDER CODE
PD54008
BRANDING
XPD54008
DESCRIPTION
The PD54008 is a common source N-Channel, en-
hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 7V in common source mode at frequencies of
up to 1GHz. PD54008 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD54008’s su-
perior linearity performance makes it an ideal so-
lution for portable radio.
PowerSO-10RF
(Straight Lead)
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
ORDER CODE
PD54008S
BRANDING
XPD54008S
= 25 OC)
ABSOLUTE MAXIMUM RATINGS(T
CASE
Parameter
Drain Source Voltage
Symbol
Value
Unit
V
25
±20
V
V
(BR)DSS
V
Gate-Source Voltage
Drain Current
GS
I
5
A
D
0
P
73
W
DISS
Power Dissipation (@ Tc = 70 C)
T
Max. Operating Junction Temperature
Storage Temperature
165
0
j
C
C
T
-65 to 165
0
STG
THERMAL DATA
0C/W
1/10
R
Junction-Case Thermal Resistance
1.3
th(j-c)
May 2000
PD54008 - PD54008S
= 25 0C)
ELECTRICAL SPECIFICATION(T
CASE
STATIC
Symbol
Parameter
= 25V
Min.
Typ.
Max.
1
Unit
µA
µA
V
I
V
V
V
V
V
V
V
V
= 0 V
V
V
I
DSS
GS
GS
DS
GS
DS
GS
GS
GS
DS
DS
I
= 20 V
= 10 V
= 10 V
= 10 V
= 0 V
= 0 V
1
GSS
V
= 150 mA
= 2 A
2.0
2.0
5.0
0.7
GS(Q)
D
V
I
V
DS(ON)
D
g
FS
I
D
= 2 A
2.5
91
mho
pF
pF
pF
C
V
= 7.5 V
DS
f = 1 MHz
f = 1 MHz
f = 1 MHz
ISS
OSS
RSS
C
= 0 V
V
V
= 7.5 V
= 7.5 V
68
DS
DS
C
= 0 V
8.5
DYNAMIC
Symbol
Parameter
= 150 mA
Min.
Typ.
Max.
Unit
W
P
f = 500 MHz
f = 500 MHz
f = 500 MHz
f = 500 MHz
V
V
V
= 7.5 V
= 7.5 V
= 7.5 V
= 9.5 V
I
DQ
8
OUT
DD
DD
DD
G
P
P
= 8 W
= 8 W
= 8 W
I
I
I
= 150 mA
= 150 mA
= 150 mA
10
50
dB
%
PS
OUT
OUT
DQ
DQ
DQ
η
D
LOAD
Mismatch
V
P
OUT
DD
20:1
VSWR
ALL PHASE ANGLES
D
PIN CONNECTION
SOURCE
DRAIN
Z
DL
GATE
Typical Input
Impedance
Typical Drain
Load Impedance
G
Zin
S
SC15200
SC13140
IMPEDANCE DATA
PD54008S
PD54008
Zin
Ω
Zdl
Ω
Zin
Ω
Zdl
Ω
Frequency
MHz
Frequency
MHz
480
500
520
2.00 - j1.44
1.92 - j1.21
2.18 - j.88
1.41 - j.38
1.58 - j.70
1.61 - j1.05
480
500
520
1.69 - j1.48
1.63 - j1.40
1.75 - j.71
1.65 - j.40
1.49 - j.09
1.36 -j.88
2/10
PD54008 - PD54008S
TYPICAL PERFORMANCE
Capacitance vs. Drain Voltage
Drain Current vs. Gate Voltage
4
3.5
3
1000
f=1MHz
Ciss
100
2.5
2
Coss
1.5
1
10
1
Crss
VDS=10V
0.5
0
2.5
3
3.5
4
4.5
5
0
5
10
15
Vgs, GATE-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Gate-Source Voltage vs. Case Temperature
1.04
1.02
ID =3A
ID =2A
1
0.98
0.96
ID =1.5A
=1A
I
D
VDS=10V
I
D =.25A
-25
0
25
50
75
Tc, CASE TEMPERATURE (°C)
3/10
PD54008 - PD54008S
TYPICAL PERFORMANCE
Output Power vs. Input Power
PD54008
Power Gain vs. Output Power
14
10
480MHz
480MHz
520MHz
12
8
500MHz
500MHz
10
6
520MHz
8
6
4
4
2
0
DD
V
I
=7.5V
V
DQ
I
DD= 7.5V
=150mA
DQ
= 150mA
0
0.5
1
1.5
2
2.5
0
1
2
3
4
5
6
7
8
9
10
Pin, INPUT POWER (W)
Pout, OUTPUT POWER (W)
Drain Efficiency vs. Output Power
Return Loss vs. Output Power
60
0
50
500MHz
480MHz
-10
500 MHz
40
480MHz
520MHz
-20
-30
-40
30
520MHz
20
10
0
DD
V
I
=7.5 V
DQ
= 150 mA
DD
V
I
=7.5V
DQ
=150mA
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
Pout, OUTPUT POWER (W)
Pout, OUTPUT POWER (W)
Output Power vs. Bias Current
Drain Efficiency vs. Bias Current
12
10
8
70
480MHz
500MHz
520MHz
60
480MHz
500MHz
6
50
520MHz
4
40
30
DD
V
=7.5V
DD
V
=7.5V
2
IN
P =1 W
IN
P = 1W
0
0
200
400
600
800
1000
0
200
400
600
800
1000
Idq, BIAS CURRENT (mA)
Idq, BIAS CURRENT (mA)
4/10
PD54008 - PD54008S
TYPICAL PERFORMANCE
Output Power vs. Drain Voltage
Drain Efficency vs. Drain Voltage
20
15
10
5
60
50
40
30
20
480MHz
480 MHz
500MHz
520MHz
500 MHz
520MHz
Idq =150 mA
=1 W
Idq = 150 mA
=1 W
IN
P
IN
P
0
5
6
7
8
9
10
11
12
5
6
7
8
9
10
11
12
VDS, DRAIN-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
PD54008S
Output Power vs. Input Power
Output Power vs. Gate Bias Voltage
10
10
480 MHz
480 MHz
520MHz
8
6
8
500MHz
500 MHz
6
4
2
0
520MHz
4
2
0
DD
V
=7.5 V
= 1W
DD
V
= 7.5V
IN
P
DQ
I
= 150 mA
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
0.5
1
1.5
2
2.5
3
3.5
Pin, INPUT POWER (W)
VGS, GATEBIAS VOLTAGE (V)
Power Gain vs. Output Power
Drain Efficiency vs. Output Power
16
70
480 MHz
60
50
40
30
20
10
0
500 MHz
14
12
520 MHz
480MHz
520MHz
500MHz
10
8
DD
V
=7.5V
DD
V
I
=7.5V
= 150mA
DQ
I
= 150 mA
DQ
6
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
Pout, OUTPUT POWER (W)
Pout, OUTPUT POWER (W)
5/10
PD54008 - PD54008S
TYPICAL PERFORMANCE
Return Loss vs. Output Power
Output Power vs. Bias Current
12
0
DD
V
I
=7.5V
10
8
480MHz
DQ
= 150mA
-10
-20
-30
-40
520MHz
520MHz
6
480MHz
500MHz
4
500MHz
DD
V
= 7.5V
2
PIN = 0.7W
0
0
200
400
600
800
1000
0
1
2
3
4
5
6
7
8
9
10
Idq, BIAS CURRENT (mA)
Pout, OUTPUT POWER (W)
Drain Efficiency vs. Bias Current
Output Power vs. Drain Voltage
70
20
480MHz
480MHz
60
15
10
500MHz
520MHz
50
40
30
520 MHz
500MHz
5
0
DD
V
=7.5 V
dq
I
=150mA
IN
P
=0.7W
IN
P =0.7W
0
200
400
600
800
1000
5
6
7
8
9
10
11
12
Idq, BIAS CURRENT (mA)
VDS,DRAIN-SOURCE VOLTAGE (V)
Drain Efficency vs. Drain Voltage
Output Power vs. Gate Bias Voltage
70
10
480 MHz
8
6
4
2
0
480MHz
60
520 MHz
520MHz
500MHz
50
40
30
500 MHz
Idq=150mA
DD
V
=7.5 V
IN
P
=0.7W
IN
P
= 0.7W
5
6
7
8
9
10
11
12
0
0.5
1
1.5
2
2.5
3
3.5
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATEBIASVOLTAGE (V)
6/10
PD54008 - PD54008S
TEST CIRCUIT SCHEMATIC
TEST CIRCUIT COMPONENT PART LIST
B1,B2
FERRITE BEAD
R2
R3
1,0kΩ, 1W CHIP RESISTOR
C1,C14
300pF, 100 mil CHIP CAPACITOR
33 kΩ, 1W CHIP RESISTOR
0.471” X 0.080” MICROSTRIP
1.082” X 0.080” MICROSTRIP
0.372” X 0.080” MICROSTRIP
C2,C3,C4,C11,
C12,C13
1 TO 20 pF TRIMMER CAPACITOR
pF 100 mil CHIP CAP
Z1
Z2
Z3
C6,C18
C9,C15
10µF, 50V ELECTROLYTIC
CAPACITOR
C8,C16
C7,C17
C5, C10
L1
0.1mF, 100 mil CHIP CAP
1,000pF 100 mil CHIP CAP
33pF, 100 mil CHIP CAP
56nH, 7 TURN, COILCRAFT
TYPE N FLANGE MOUNT
Z4,Z5
Z6
0.260” X 0.223” MICROSTRIP
0.050” X 0.080” MICROSTRIP
0.551” X 0.080” MICROSTRIP
0.825” X 0.080” MICROSTRIP
0.489” X 0.080” MICROSTRIP
ROGER, ULTRA LAM 2000
Z7
Z8
N1,N2
Z9
R1
BOARD
15 Ω, 1W CHIP RESISTOR
THK 0.030” εr = 2.55
2oz ED Cu 2 SIDES
7/10
PD54008 - PD54008S
TEST CIRCUIT
TEST CIRCUIT PHOTOMASTER
6.4 inches
8/10
PD54008 - PD54008S
PowerSO-10RF (Straight Lead) MECHANICAL DATA
PowerSO-10RF (Formed Lead) MECHANICAL DATA
9/10
PD54008 - PD54008S
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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10/10
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