PD57018 [STMICROELECTRONICS]
RF POWER TRANSISTORS The LdmoST Plastic FAMILY; RF功率晶体管的LDMOST塑料系列型号: | PD57018 |
厂家: | ST |
描述: | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
文件: | 总4页 (文件大小:50K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD57018
PD57018S
RF POWER TRANSISTORS
LdmoST
The
Plastic FAMILY
TARGET DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 18 W with 14 dB gain @ 960 MHz / 28V
• NEW RF PLASTIC PACKAGE
PowerSO-10RF
(Formed Lead)
DESCRIPTION
ORDER CODE
PD57018
BRANDING
XPD57018
The PD57018 is a common source N-Channel, en-
hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28V in common source mode at frequencies of
up to 1GHz. PD57018 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD57018’s su-
perior linearity performance makes it an ideal so-
lution for base station applications.
PowerSO-10RF
(Straight Lead)
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
ORDER CODE
PD57018S
BRANDING
XPD57018S
= 25 0C)
ABSOLUTE MAXIMUM RATINGS(T
CASE
Parameter
Drain-Source Voltage
Symbol
Value
Unit
V
65
±20
V
V
(BR)DSS
V
Gate-Source Voltage
Drain Current
GS
I
2.5
A
D
P
31.7
W
0C
0C
DISS
Power Dissipation (@ Tc = 70 0C)
T
Max. Operating Junction Temperature
Storage Temperature
165
j
T
-65 to 175
STG
THERMAL DATA(T
= 70 0C)
CASE
0
R
Junction-Case Thermal Resistance
3.0
th(j-c)
C/W
Jun 2000
1/4
PD57018 PD57018S
= 25 0C)
ELECTRICAL SPECIFICATION(T
CASE
STATIC
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
V
V
V
V
V
V
V
V
V
V
=
=
0 V
0 V
I
DS
= 10 mA
= 28 V
65
(BR)DSS
GS
GS
GS
DS
GS
DS
GS
GS
GS
I
V
DS
1
1
µA
µA
V
DSS
I
= 20 V
= 28 V
= 10 V
= 10 V
= 0 V
= 0 V
= 0 V
V
DS
= 0 V
GSS
V
I
I
I
= 50 mA
= 1 A
2.0
5.0
GS(Q)
D
D
D
V
0.3
V
DS(ON)
g
FS
= 1 A
mho
pF
pF
pF
C
V
DS
= 28 V
= 28 V
= 28 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
36
19
ISS
OSS
RSS
C
C
V
DS
V
DS
0.9
DYNAMIC
Symbol
Parameter
= 50 mA
Min.
18
Typ.
Max.
Unit
W
P
V
V
V
V
= 28 V f = 960 MHz
= 28 V f = 960 MHz
= 28 V f = 960 MHz
I
DQ
OUT
DD
DD
DD
DD
G
P
P
P
= 18 W
= 18 W
= 18 W
I
I
= 50 mA
= 50 mA
= 50 mA
14
15
60
dB
%
PS
OUT
OUT
OUT
DQ
DQ
η
50
D
= 2 V
f = 960 MHz
I
DQ
LOAD
Mismatch
10:1
VSWR
ALL PHASE ANGLES
PIN CONNECTION
SOURCE
DRAIN
GATE
SC15200
2/4
PD57018 PD57018S
PowerSO-10RF (Straight Lead) MECHANICAL DATA
PowerSO-10RF (Formed Lead) MECHANICAL DATA
3/4
PD57018 PD57018S
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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4/4
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