PD57030 [STMICROELECTRONICS]
RF POWER TRANSISTORS The LdmoST Plastic FAMILY; RF功率晶体管的LDMOST塑料系列型号: | PD57030 |
厂家: | ST |
描述: | RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
文件: | 总4页 (文件大小:50K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD57030
PD57030S
RF POWER TRANSISTORS
LdmoST
The
Plastic FAMILY
TARGET DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 30 W with 13 dB gain @ 945 MHz / 28V
• NEW RF PLASTIC PACKAGE
PowerSO-10RF
(Formed Lead)
DESCRIPTION
ORDER CODE
PD57030
BRANDING
XPD57030
The PD57030 is a common source N-Channel, en-
hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28V in common source mode at frequencies of
up to 1GHz. PD57030 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD57030’s su-
perior linearity performance makes it an ideal so-
lution for base station applications.
PowerSO-10RF
(Straight Lead)
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
ORDER CODE
PD57030S
BRANDING
XPD57030S
= 25 0C)
ABSOLUTE MAXIMUM RATINGS(T
CASE
Parameter
Drain-Source Voltage
Symbol
Value
Unit
V
65
±20
V
V
(BR)DSS
V
Gate-Source Voltage
Drain Current
GS
I
4
A
D
0
P
52.8
W
DISS
Power Dissipation (@ Tc = 70 C)
T
Max. Operating Junction Temperature
Storage Temperature
165
0
j
C
0C
T
-65 to 175
STG
THERMAL DATA(T
= 70 0C)
CASE
0
R
Junction-Case Thermal Resistance
1.8
th(j-c)
C/W
May 2000
1/4
PD57030 PD57030S
= 25 0C)
ELECTRICAL SPECIFICATION(T
CASE
STATIC
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
V
V
V
V
V
V
V
V
V
V
= 0 V
= 0 V
= 20V
= 28V
= 10V
= 10V
= 0 V
= 0 V
= 0 V
I
= 10mA
= 28V
DS
65
(BR)DSS
GS
GS
GS
DS
GS
DS
GS
GS
GS
DS
I
V
V
1
1
µA
µA
V
DSS
I
= 0V
DS
GSS
V
I
D
= 50mA
= 3A
2.0
5.0
GS(Q)
V
I
I
1.3
1.8
57
V
DS(ON)
D
g
FS
= 3A
mho
pF
pF
pF
D
C
V
V
V
= 28V
= 28V
= 28V
f = 1 MHz
f = 1 MHz
f = 1 MHz
ISS
OSS
RSS
DS
DS
DS
C
C
30
1.4
DYNAMIC
Symbol
Parameter
= 50mA
Min.
30
Typ.
Max.
Unit
W
P
V
V
V
V
= 28V
= 28V
= 28V
= 28V
f = 945 MHz
f = 945 MHz
f = 945 MHz
f = 945MHz
I
DQ
OUT
DD
DD
DD
DD
G
P
P
P
= 30W
= 30W
= 30W
I
DQ
= 50mA
= 50mA
= 50mA
13
14
60
dB
%
PS
OUT
OUT
OUT
η
I
DQ
50
D
LOAD
Mismatch
I
DQ
10:1
VSWR
ALL PHASE ANGLES
PIN CONNECTION
SOURCE
DRAIN
GATE
SC15200
2/4
PD57030 PD57030S
PowerSO-10RF (Straight Lead) MECHANICAL DATA
PowerSO-10RF (Formed Lead) MECHANICAL DATA
3/4
PD57030 PD57030S
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
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4/4
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