SD1433 [STMICROELECTRONICS]
RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS; 射频与微波晶体管UHF移动应用程序
| 型号： | SD1433 |
| 厂家： | 
ST |
| 描述： | RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS |
| 文件： | 总5页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD1433
RF & MICROWAVE TRANSISTORS
UHF MOBILE APPLICATIONS
.
.
.
.
.
.
470 MHz
12.5 VOLTS
CLASS C
EFFICIENCY 60%
COMMON EMITTER
POUT 10 W MIN. WITH 8.0 dB GAIN
=
.280 4L STUD (M122)
epoxy sealed
ORDER CODE
BRANDING
SD1433
SD1433
PIN CONNECTION
DESCRIPTION
The SD1433 is a Class C epitaxial silicon NPN
planar transistor designed for driver applications
in the 450 - 512 MHz frequency range. This device
uses an emitter ballasted geometry specifically de-
signed for optimum stable power gain, maximum
efficiency and infinite VSWR.
1. Collector
2. Emitter
3. Base
4. Emitter
°
= 25 C)
ABSOLUTE MAXIMUM RATINGS (T
case
Symbol
VCBO
VCEO
VCES
VEBO
IC
Parameter
Value
36
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
16
V
36
V
4.0
2.5
58
V
A
PDISS
TJ
Power Dissipation
W
°
°
Junction Temperature
Storage Temperature
+200
C
C
TSTG
65 to +150
3.0
−
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
°C/W
1/5
November 1992
SD1433
°
= 25 C)
ELECTRICAL SPECIFICATIONS (T
case
STATIC
Value
Symbol
Test Conditions
Unit
Min. Typ.
Max.
—
—
—
3
BVCES
BVCEO
BVEBO
ICES
IC = 25mA
IC = 20mA
IE = 10mA
VCE = 10V
VCB = 15V
VCE = 5V
VBE = 0V
IB = 0mA
IC = 0mA
IE = 0mA
IE = 0mA
IC = 1A
36
16
4.0
—
—
—
—
—
—
—
V
V
V
mA
mA
—
ICBO
—
2
hFE
10
—
DYNAMIC
Value
Symbol
Test Conditions
Unit
Min.
10
7
Typ. Max.
POUT
GP
f = 470 MHz
f = 470 MHz
f = 1 MHz
PIN = 2.0 W
POUT = 10 W
VCB = 12.5 V
VCE = 12.5 V
VCE = 12.5 V
—
—
19
—
—
—
W
dB
pF
COB
—
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
POWER GAIN & EFFICIENCY
vs POWER INPUT
POWER OUTPUT vs FREQUENCY
2/5
SD1433
IMPEDANCE DATA
TYPICAL COLLECTOR
LOAD IMPEDANCE
TYPICAL INPUT IMPEDANCE
FREQ.
ZIN (Ω)
ZCL ( )
Ω
470 MHz
1.5 − j 2.7
5.7 + j 1.5
3/5
SD1433
TEST CIRCUIT
L1
L2
L3
:
:
:
0.47µH Molded Choke
C1, C2 : 0.8pF Voltronics
C3 18pF Chip Capacitor
C4, C5 : AJ810
2 Turns, #20 AWG, 1/8” I.D.
2 Turns in Ferroxcube VK200/19-4B
:
C6
C7
:
:
1000pF Chip Capacitor
0.01µF Disc Ceramic
Board
Material: 3M-K6098, 1/16” Thick
C8, C9 : 1000pF Unelco
C10
: 10 F, 35V Electrolytic
µ
4/5
SD1433
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0122
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsin life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
5/5
相关型号：
©2020 ICPDF网 联系我们和版权申明