SD1456 [STMICROELECTRONICS]
RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS; 射频与微波晶体管电视/线性应用型号: | SD1456 |
厂家: | ST |
描述: | RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS |
文件: | 总5页 (文件大小:98K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SD1456 (TCC3100)
RF & MICROWAVE TRANSISTORS
TV/LINEAR APPLICATIONS
.
.
.
.
170 - 230 MHz
28 VOLTS
CLASS AB PUSH PULL
DESIGNED FOR HIGH POWER LINEAR
OPERATION
.
.
.
HIGH SATURATED POWER CAPABILITY
GOLD METALLIZATION
.400 x .425 8LFL (M168)
DIFFUSED EMITTER BALLAST
RESISTORS
epoxy sealed
ORDER CODE
BRANDING
TCC3100
.
.
COMMON EMITTER CONFIGURATION
SD1456
POUT 100 W MIN. WITH 11.0 dB GAIN
=
PIN CONNECTION
DESCRIPTION
The SD1456 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class AB operation in
VHF and Band III television transmitters and trans-
posers.
1. Collector
2. Emitter
3. Base
°
= 25 C)
ABSOLUTE MAXIMUM RATINGS (T
case
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
65
Unit
Collector-Base Voltage
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
33
3.5
V
16
A
PDISS
TJ
Power Dissipation
150
W
°
Junction Temperature
Storage Temperature
+200
65 to +150
C
C
°
TSTG
−
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
1.2
°C/W
1/5
November 1992
SD1456 (TCC3100)
°
= 25 C)
ELECTRICAL SPECIFICATIONS (T
case
STATIC
Value
Symbol
Test Conditions
Unit
Min. Typ.
Max.
—
BVCBO
BVCER
BVCEO
BVEBO
hFE
IC = 50mA
IC = 50mA
IC = 50mA
IE = 5mA
VCE = 5V
IE = 0mA
RBE = 15Ω
IB = 0mA
IC = 0mA
IC = 500mA
65
60
33
3.5
20
—
—
—
—
—
V
V
—
—
V
—
V
150
—
DYNAMIC (Class AB)
Value
Symbol
Test Conditions
Unit
Min.
Typ. Max.
POUT
GP
f = 225 MHz
VCE = 28 V
VCE = 28 V
VCE = 28 V
VCB = 28 V
IC = 2 x 100 mA 100
—
—
—
60
—
—
—
—
W
dB
%
POUT = 100 W
POUT = 100 W
f = 1 MHz
IC = 2 x 100 mA 11
IC = 2 x 100 mA 70
—
η
c
COB
pF
DYNAMIC (Class A)
Value
Symbol
Test Conditions
Unit
Min.
Typ. Max.
POUT
GP*
*
f = 225 MHz
PIN = 1.1 W
PIN = 1.1 W
VCE = 28 V
VCE = 28 V
VCE = 28 V
IC = 2 x 2.5 A
IC = 2 x 2.5 A
PREF = 28 W
28
14
—
32
15
—
—
—
W
dB
dB
IMD3*
−51
Note:
* Class A Performance Characteristics Indicate Capability but are not Tested.
IMD3 - 3 Tone Meaurement; 8, 7, 16dB relative to P
−
− −
REF
TYPICAL PERFORMANCE
BROADBAND POWER GAIN vs
FREQUENCY
POWER OUTPUT vs POWER INPUT
2/5
SD1456 (TCC3100)
TYPICAL PERFORMANCE (cont’d)
COLLECTOR EFFICIENCY vs
INTERMODULATION DISTORTION vs
POWER OUTPUT
FREQUENCY
IMPEDANCE DATA
FREQ.
ZIN (Ω)
ZOUT ( )
Ω
170 MHz
200 MHz
230 MHz
1.3 + j 0.6
1.0 + j 1.0
0.9 + j 1.8
9.5 − j 10.0
9.0 − j 8.0
6.3 − j 6.5
POUT = 100 W
VCE = 28 V
ICQ = 2 x 100 mA
Class AB
3/5
SD1456 (TCC3100)
IMPEDANCE DATA
FREQ.
ZIN (Ω)
ZOUT ( )
Ω
170 MHz
200 MHz
230 MHz
1.05 + j 0.65
0.9 + j 1.1
1.25 + j 1.8
13.5 − j 9.0
11.0 − j 6.5
9.5 − j 7.7
VCE = 28 V
ICQ = 2 x 2.5 A
Class A
4/5
SD1456 (TCC3100)
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0168
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsin life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
5/5
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