SD57030 [STMICROELECTRONICS]
RF POWER TRANSISTORS The LdmoST FAMILY; RF功率晶体管的LDMOST系列
| 型号： | SD57030 |
| 厂家： | 
ST |
| 描述： | RF POWER TRANSISTORS The LdmoST FAMILY |
| 文件： | 总7页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD57030
RF POWER TRANSISTORS
The LdmoST FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
= 30 W WITH 13 dB gain @ 945 MHz
OUT
• BeO FREE PACKAGE
M243
(Epoxy Sealed)
ORDER CODE
BRANDING
DESCRIPTION
SD57030
TSD57030
The SD57030 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 1.0
GHz. The SD57030 is designed for high gain and
broadband performance operating in common
source mode at 28 V. It is ideal for base station
applications requiring high linearity.
PIN CONNECTION
1
3
2
1. Drain
2. Gate
3. Source
ABSOLUTE MAXIMUM RATINGS (T
= 25°C)
CASE
Symbol
Parameter
Value
Unit
V
V
Drain-Source Voltage
65
(BR)DSS
V
Drain-Gate Voltage (R = 1 MΩ)
65
V
DGR
GS
V
Gate-Source Voltage
+ 20
V
GS
I
Drain Current
4
74
A
D
P
Power Dissipation (@ Tc = 70°C)
Max. Operating Junction Temperature
Storage Temperature
W
°C
°C
DISS
Tj
200
T
-65 to + 200
STG
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance
1.75
°C/W
March, 24 2003
1/7
SD57030
ELECTRICAL SPECIFICATION (T
= 25°C)
CASE
STATIC
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
V
V
V
GS
V
GS
V
GS
V
DS
V
GS
V
DS
V
GS
V
GS
V
GS
= 0 V
= 0 V
I
= 10 mA
65
(BR)DSS
DS
I
V
= 28 V
= 0 V
1
1
µA
µA
V
DSS
DS
DS
I
= 20 V
= 28 V
= 10 V
= 10 V
= 0 V
V
GSS
V
GS(Q)
I
I
= 50 mA
= 3 A
2.0
5.0
D
V
1.3
1.8
58
V
DS(ON)
D
D
G
I
= 3 A
mho
pF
pF
pF
FS
C
ISS
*
V
V
V
= 28 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
DS
C
= 0 V
= 28 V
= 28 V
34
OSS
RSS
DS
DS
C
= 0 V
2.7
Ref. 7143417B
DYNAMIC
Symbol
Test Conditions
Min.
30
Typ.
Max.
Unit
W
P
V
= 28 V
= 28 V
= 28 V
= 28 V
I
I
I
I
= 50 mA
= 50 mA
= 50 mA
= 50 mA
f = 945 MHz
OUT
DD
DD
DD
DD
DQ
DQ
DQ
DQ
G
V
V
V
P
P
P
= 30 W
= 30 W
= 28 W
f = 945 MHz
f = 945 MHz
f = 945 MHz
13
15
60
dB
%
PS
OUT
OUT
OUT
η
50
D
Load
mismatch
10:1
VSWR
ALL PHASE ANGLES
2/7
SD57030
TYPICAL PERFORMANCE (CW)
Output Power vs. Input Power
Power Gain and Efficiency vs. Output Power
40
30
20
10
0
21
18
15
12
9
70
60
50
40
30
20
10
0
Gain
Eff
6
f= 945 MHz
Vdd= 28 V
Idq= 50 mA
f= 945 MHz
Vdd= 28 V
Idq= 50 mA
3
0
0
5
10
15
20
25
30
35
40
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Pout, OUTPUT POWER (W)
Pin, INPUT POWER (W)
Output Power vs. Gate Source Voltage
Output Power vs. Supply Voltage
35
35
f= 945 MHz
Vdd= 28 V
Idq= 50 mA
Pin= .84 W
f= 945 MHz
Idq= 50 mA
30
30
25
25
Pin= .47 W
Pin= .24 W
20
15
10
5
20
15
10
5
0
0
-5
-4
-3
-2
-1
0
1
2
3
4
8
12
16
20
24
28
32
Vgs, GATE-SOURCE VOLTAGE (V)
VDD, SUPPLY VOLTAGE (V)
3/7
SD57030
TEST CIRCUIT SCHEMATIC
NOTES:
1. DIMENSIONS AT COMPONENT SYMBOLS ARE REFERENCE FOR COMPONENT PLACEMENT.
2. GAP BETWEEN GROUND & TRANSMISSION LINE = 0.056 [1.42] +0.002 [0.05] -0.000 [0.00] TYP.
3. DIMENSIONS OF INPUT AND OUTPUT COMPONENT FROM EDGE OF TRANSMISSION LINES.
TEST CIRCUIT COMPONENT PART LIST
COMPONENT
DESCRIPTION
C19
C18, C14
200 µF / 63V ALLUMINIUM ELECTROLYTIC RADIAL LEAD CAPACITOR
0.1 µF / 500V SURFACE MOUNT CERAMIC CHIP CAPACITOR
100 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
47 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
10 µF / 50V ALUMINIUM ELECTROLYTIC RADIAL LEAD CAPACITOR
100 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR
0.8-8.0 pF GIGA TRIM VARIABLE CAPACITOR
C17
C16, C12, C11,C1
C15
C13
C9, C2
C8
6.2 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
10 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
3 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR
120 0-IM, 2W SURFACE MOUNT CERAMIC CHIP CAPACITOR
4.7 M OHM 1W SURFACE MOUNT CERAMIC CHIP CAPACITOR
18 K OHM, 1W SURFACE MOUNT CERAMIC CHIP CAPACITOR
SHIELD BEAD SURFACE MOUNT EMI
C7, C6, C5 ,C4
C3
R3
R2
R1
FB2, FB1
INDUCTOR, 5 TURNS AIR WOUND #22AWG, ID=0.059[1.49], NYLON COATED MAGNET
WIRE
L2, L1
PCB
WOVEN FIBERGLASS REINFORCED PTFE 0.080’’ THK, εr=2.55, 2 Oz EDCu BOTH SIDE
4/7
SD57030
TEST CIRCUIT
SD57030
TEST CIRCUIT PHOTOMASTER
SD57030
6.4 inches
5/7
SD57030
DIM.
M243 (.230 x .360 2L N/HERM W/FLG) MECHANICAL DATA
mm
Inch
TYP.
MIN.
5.21
5.46
5.59
TYP.
MAX
5.72
6.48
6.10
MIN.
0.205
0.215
0.220
MAX
0.225
0.255
0.240
A
B
C
D
E
F
G
H
I
14.27
0.562
20.07
8.89
0.10
3.18
1.83
1.27
20.57
9.40
0.15
4.45
2.24
1.78
0.790
0.350
0.004
0.125
0.072
0.050
0.810
0.370
0.006
0.175
0.088
0.070
J
Controlling dimension: Inches
1022142E
6/7
SD57030
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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