SMP80MC-270 [STMICROELECTRONICS]
TELECOM EQUIPMENT PROTECTION TRISIL; 电信设备保护TRISIL型号: | SMP80MC-270 |
厂家: | ST |
描述: | TELECOM EQUIPMENT PROTECTION TRISIL |
文件: | 总8页 (文件大小:85K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
®
SMP80MC-270
TELECOM EQUIPMENT PROTECTION: TRISIL™
FEATURES
■
■
■
■
■
■
■
Bidirectional crowbar protection
Voltage: 270V
Low VBO / VR ratio
Micro capacitance 15pF typ @ 50V
Low leakage current : IR = 2µA max
Holding current: IH = 150 mA min
Repetitive peak pulse current :
IPP = 80 A (10/1000µs)
MAIN APPLICATIONS
Any sensitive equipment requiring protection
against lightning strikes and power crossing:
SMB
(JEDEC DO-214AA)
■
Analog and digital line cards
(xDSL, T1/ E1, ISDN...)
■
Terminals (phone, fax, modem...) and central of-
fice equipment
SCHEMATIC DIAGRAM
DESCRIPTION
The SMP80MC-270 is a micro capacitance
transient surge arrestor designed for the
protection of high debit rate communication
equipment. Its micro capacitance avoids any
distortion of the signal and is compatible with
digital line cards (xDSL, T1/E1, ISDN...).
BENEFITS
Trisils are not subject to ageing and provide a fail safe mode in short circuit for a better protection. They are
used to help equipment to meet main standards such as UL1950, IEC950 / CSA C22.2 and UL1459. They
have UL94 V0 approved resin. SMB package is JEDEC registered (DO-214AA). Trisils are UL497B
approved (file: E136224) and comply with the following standards GR-1089 Core, ITU-T-K20/K21,
VDE0433, VDE0878, IEC61000-4-5 and FCC part 68.
September 2003 - Ed: 0B
1/8
SMP80MC-270
IN COMPLIANCES WITH THE FOLLOWING STANDARDS
Peak Surge
Voltage
Required
peak current
(A)
Minimum serial
resistor to meet
standard ( )
Current
waveform
STANDARD
Voltage
(V)
Waveform
GR-1089 Core
First level
2500
1000
2/10 µs
10/1000 µs
500
100
2/10 µs
10/1000 µs
5
2.5
GR-1089 Core
Second level
5000
2/10 µs
500
2/10 µs
2/10 µs
5/310 µs
10
GR-1089 Core
Intra-building
1500
2/10 µs
100
0
ITU-T-K20/K21
6000
1500
10/700 µs
1/60 ns
150
37.5
10
0
ITU-T-K20
(IEC61000-4-2)
8000
15000
ESD contact discharge
ESD air discharge
0
0
VDE0433
4000
2000
10/700 µs
1.2/50 µs
100
50
5/310 µs
0
0
VDE0878
4000
2000
100
50
1/20 µs
0
0
IEC61000-4-5
4000
4000
10/700 µs
1.2/50 µs
100
100
5/310 µs
8/20 µs
0
0
FCC Part 68, lightning
surge type A
1500
800
10/160 µs
10/560 µs
200
100
10/160 µs
10/560 µs
2.5
0
FCC Part 68, lightning
surge type B
1000
9/720 µs
25
5/320 µs
0
THERMAL RESISTANCES
Symbol
Parameter
Value
100
20
Unit
°C/W
°C/W
Rth(j-a)
Rth(j-l)
Junction to ambient with recommended footprint
Junction to leads
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Symbol
VRM
IRM
VR
Parameter
Stand-off voltage
Leakage current at VRM
Continuous reverse voltage
Leakage current at VR
Breakdown voltage
Breakover voltage
Holding current
IR
VBR
VBO
IH
IBO
Breakover current
Peak pulse current
Capacitance
IPP
C
2/8
SMP80MC-270
ABSOLUTE RATINGS (Tamb = 25°C)
Symbol
Parameter
Repetitive peak pulse current:
Value
Unit
Ipp
A
10/1000 µs
8/20 µs
10/560 µs
5/310 µs
10/160 µs
1/20 µs
80
250
100
120
150
250
250
2/10 µs
Fail-safe mode : maximum current (note 1)
8/20 µs
5
kA
A
IFS
ITSM
Non repetitive surge peak on-state current
(Sinusoidal)
t = 20ms
t = 16.6ms
t = 0.2s
28
30
14
7
t = 2s
I²t
I²t value for fusing
t = 16.6ms
t = 20ms
7.5
7.8
A²s
°C
Maximum lead temperature for soldering during 10s
260
TL
Tstg
Tj
Storage temperature range
Maximum junction temperature
- 55 to + 150
150
°C
°C
Note 1: in fail safe mode, the device acts as a short circuit.
% I
PP
Repetitive peak pulse current
100
tr: rise time (µs)
50
0
tp: pulse duration time (µs)
ex: Pulse waveform 10/1000µs
tr = 10µs tp = 1000µs
t
t
t
r
p
ELECTRICAL PARAMETERS (Tamb = 25°C)
Type
Dynamic
VBO
max.
Static
VBO @ IBO
IR @ VR
IRM @ VRM
max.
IH
min.
C
typ.
C
typ.
max.
max.
max
Note 1
Note 4 Note 5 Note 6
Note 2
Note 3
µA
V
µA
V
V
V
mA
mA
pF
pF
SMP80MC-270
2
243
50
270
345
335
800
150
15
30
Note 1:
I
measured at V guarantee V
V
See functional holding current test circuit 3
R
R
BR min ≥
R
Note 4:
Note 2: See functional test circuit 1
Note 3: See test circuit 2
Note 5:
V
V
= 50V bias, V
=1V, F=1MHz
R
RMS
= 2V bias, V =1V, F=1MHz
RMS
Note 6:
R
3/8
SMP80MC-270
Fig. 1: Non repetitive surge peak on-state current
versus overload duration.
Fig. 2: On-state voltage versus on-state current
(typical values)
I
(A)
TSM
I (A)
T
40
35
30
25
20
15
10
5
100
F=50Hz
Tj initial = 25°C
Tj=25°C
V (V)
T
t(s)
10
0
0
1
2
3
4
5
6
7
8
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Fig. 4: Relative variation of breakover voltage versus
junction temperature.
Fig. 3: Relative variation of holding current versus
junction temperature .
IH[Tj] / IH[Tj=25°C]
V
[Tj] / V [Tj=25°C]
BO BO
2.0
1.08
1.07
1.06
1.05
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
0.94
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Tj(°C)
Tj(°C)
0.0
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90 100 110 120 130
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Fig. 5: Relative variation of leakage current versus
reverse voltage applied (typical values).
Fig. 6: Variation of thermal impedance junction to
ambient versus pulse duration (Printed circuit board
FR4, SCu=35µm, recommended pad layout).
Z
/R
I [Tj] / I [Tj=25°C]
th(j-a) th(j-a)
R
R
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E+03
1.E+02
1.E+01
1.E+00
VR=243V
Tj(°C)
tp(s)
25
50
75
100
125
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
4/8
SMP80MC-270
Fig. 7: Relative variation of junction capacitance
versus reverse voltage applied (typical values).
C [V ] / C [V =2V]
R
R
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
F =1MHz
VOSC = 1VRMS
Tj = 25°C
V (V)
R
1
10
100
1000
TEST CIRCUIT 1 FOR DYNAMIC IBO AND VBO PARAMETERS
100 V / µs, di/dt < 10 A / µs, Ipp = 80A
2 Ω
45 Ω
83 Ω
46 µH
0.36 nF
10 µF
U
66 Ω
470 Ω
KeyTek 'System 2' generator with PN246I module
1 kV / µs, di/dt < 10 A / µs, Ipp = 10 A
46 µH
26 µH
60 µF
250 Ω
47 Ω
U
12 Ω
KeyTek 'System 2' generator with PN246I module
5/8
SMP80MC-270
TEST CIRCUIT 2 FOR IBO and VBO parameters :
K
ton = 20ms
R1 = 140Ω
R2 = 240Ω
220V 50Hz
VBO
measurement
DUT
Vout
1/4
IBO
measurement
TEST PROCEDURE :
Pulse test duration (tp = 20ms):
- For Bidirectional devices = Switch K is closed
- For Unidirectional devices = Switch K is open.
VOUT Selection
- Device with VBO < 200 Volt
- VOUT = 250 VRMS, R1 = 140 Ω.
- Device with VBO ≥ 200 Volt
- VOUT = 480 VRMS, R2 = 240 Ω.
TEST CIRCUIT 3 FOR IH PARAMETER
R
Surge generator
D.U.T
V
= - 48 V
BAT
This is a GO-NO GO test which allows to confirm the holding current (IH) level in a functional test circuit.
TEST PROCEDURE :
- Adjust the current level at the IH value by short circuiting the D.U.T.
- Fire the D.U.T. with a surge current : Ipp = 10A, 10/1000 µs.
- The D.U.T. will come back to the off-state within 50 ms max.
6/8
SMP80MC-270
PACKAGE MECHANICAL DATA
SMB (Plastic)
DIMENSIONS
Millimeters Inches
Min.
E1
REF.
Min.
1.90
0.05
1.95
0.15
5.10
4.05
3.30
0.75
Max.
Max.
0.096
0.008
0.087
0.016
0.220
0.181
0.156
0.063
D
A1
A2
b
2.45
0.20
2.20
0.41
5.60
4.60
3.95
1.60
0.075
0.002
0.077
0.006
0.201
0.159
0.130
0.030
E
c
E
A1
E1
D
A2
C
L
b
L
FOOT PRINT in millimeters (inches)
2.3
(0.09)
1.52
2.75
1.52
(0.059) (0.108) (0.059)
7/8
SMP80MC-270
ORDER CODE
SMP
80
MC
-
270
Micro capacitance
Trisil Surface Mount
Voltage
IPP = 80 A
Ordering type
Marking
Package
SMB
Weight
Base qty
2500
Delivery mode
SMP80MC-270
TP27
0.11g
Tape & Reel
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
© 2003 STMicroelectronics - All rights reserved.
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8/8
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