SMTPB227 [STMICROELECTRONICS]

TRISILTM; TRISILTM


型号：	SMTPB227
厂家：	ST
描述：	TRISILTM TRISILTM
文件：	总5页 (文件大小：58K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SMTPB SERIES

TRISIL

MAIN APPLICATIONS

Any sensitive equipment requiring protection

against lightning strikes:

ANALOGAND DIGITAL LINE CARDS

MAIN DISTRIBUTION FRAMES

TERMINALSANDTRANSMISSIONEQUIPMENT

GMS-TUBE REPLACEMENT

DESCRIPTION

SMC

The SMTPBxxseries hasbeen designedto protect

telecommunication equipment against lightning

and transient induced by AC power lines.

SCHEMATIC DIAGRAM

FEATURES

BIDIRECTIONAL CROWBAR PROTECTION.

BREAKDOWNVOLTAGE RANGE:

From 62 V To 270 V.

HOLDING CURRENT: I_H= 150 mA min

REPETITIVEPEAK PULSE CURRENT :

I_PP= 100A, 10/1000 µs.

BENEFITS

NO AGEINGAND NO NOISE

IF DESTROYED, THE SMTPB FALLS INTO

SHORT CIRCUIT, STILL ENSURING

PROTECTION

Peak Surge

Voltage

(V)

Voltage

Current

Admissible Necessary

COMPLIES WITH THE

FOLLOWING STANDARDS:

Waveform

Ipp

(A)

Resistor

( s)

( )

Ω

CCITT K20

VDE0433

4000

10/700

1.2/50

5/310

1/20

100

VDE0878

IEC-1000-4-5

level 4

10/700

1.2/50

5/310

8/20

100

FCC Part 68, lightning surge

type A

1500

800

10/160

10/560

10/160

10/560

200

100

FCC Part 68, lightning surge

type B

100

5/320

BELLCORETR-NWT-001089

First level

2500

1000

2/10

10/1000

2/10

10/1000

500

100

BELLCORETR-NWT-001089

Second level

500

2/10

500

CNET l31-24

4000

0.5/700

0.8/310

100

1/5

August 1999 - Ed: 2C

SMTPBxxx

ABSOLUTE MAXIMUM RATINGS (T_amb= 25°C)

Symbol

Parameter

Value

Unit

Power dissipation

Peakpulse current

_lead= 50 °C

I_PP

10/1000 µs

8/20 µs

100

250

500

2/10 µs

I_TSM

Non repetitivesurge peak on-state

current

tp = 20 ms

V_RM

dV/dt

Critical rate of rise of off-state voltage

KV/µs

T_stg

T_j

Storagetemperature range

Maximum junction temperature

- 55 to + 150

+ 150

°C

T_L

Maximum lead temperature for soldering during 10 s.

+ 260

°C

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

°C/W

R_th(j-l)

Junctionto leads

R_th(j-a)

Junctionto ambient.

On printed circuit with standard footprint dimensions.

ELECTRICAL CHARACTERISTICS

(T_amb=25°C)

Symbol

V_RM

I_RM

V_R

Parameter

Stand-offvoltage

Leakage current at stand-offvoltage

ContinuousReverse voltage

Breakdownvoltage

Breakovervoltage

V_BR

V_BO

I_H

Holding current

I_BO

Breakovercurrent

I_PP

Peakpulse current

Capacitance

Type

Marking

I_RM@ V_RM

max.

I_R@ V_R

V_BO@ I_BO

I_H

max.

note1

max.

min.

note3

typ.

note4

note2

Laser

µA

SMTPB62

SMTPB68

SMTPB120

SMTPB200

SMTPB270

W07

W11

W21

W31

W43

108

180

243

120

200

270

160

267

360

800

150

160

140

130

120

All parameters tested at 25°C, except where indicated.

Note 1: measured at V guarantees V ≥ V

Note 3: See test circuit 2.

Note 4: = 1V, F = 1MHz. Refer to fig 3 for C versus V .

BRmin

Note 2: Measured at 50 Hz (1 cycle) - Seetest circuit 1.

2/5

SMTPBxxx

TEST CIRCUIT 1 FOR I_BOand V_BOparameters:

= 20ms

Auto

Transformer

220V/2A

static

relay.

140

240

measure

out

D.U.T

measure

Transformer

220V/800V

TEST PROCEDURE :

Pulse Test duration (tp = 20ms):

- For Bidirectional devices= Switch K is closed

- For Unidirectionaldevices = Switch K is open.

_OUTSelection

- Device with V_BO< 200 Volt

- V_OUT= 250 V_RMS, R₁= 140 Ω.

- Device with V_BO≥ 200 Volt

- V_OUT= 480 V_RMS, R₂= 240 Ω.

TEST CIRCUIT 2 for I_Hparameter.

- V

D.U.T.

= - 48 V

BAT

Surge generator

This is a GO-NOGO Test which allows to confirm the holdingcurrent (I_H) level in a functional

test circuit.

TEST PROCEDURE :

1) Adjustthe current level at the I_Hvalue by short circuiting the AK of the D.U.T.

2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000µs.

3) The D.U.T will come back off-state within 50 ms max.

3/5

SMTPBxxx

Fig. 1:

Non repetitive surge peak on-state current

Fig. 2:

junction temperature.

Relativevariation of holding current versus

versus overload duration (Tj initial=25°C).

Fig. 3: Relative variation of junction capacitance

versus reverse applied voltage(typical values).

Note: For V_RMupper than 56V, the curve is

extrapolated(dotted line).

Fig. 4: On-state voltage versus on-state current

(typical values).

I^T(A)

Tj=25°C

VT(V)

2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0

Fig. 5: Transient thermal impedance junction to

ambient versus pulse duration (for FR4 PC Board

withrecommended pad layout).

4/5

SMTPBxxx

ORDER CODE

SM TPB 100

SURFACE MOUNT

VOLTAGE

TRISIL PROTECTION 100 A

Marking:

Logo, date code, type code.

PACKAGE MECHANICAL DATA.

SMC

DIMENSIONS

Millimeters Inches

Min.

REF.

Min.

1.90

0.05

2.90

0.15

7.75

6.60

4.40

5.55

0.75

Max.

2.45

0.20

3.2

Max.

0.096

0.008

0.126

0.016

0.321

0.281

0.185

0.246

0.063

0.075

0.002

0.114

0.006

0.305

0.260

0.173

0.218

0.030

0.41

8.15

7.15

4.70

6.25

1.60

FOOTPRINT DIMENSIONS

SMC

(in millimeters)

Packaging: Standardpackagingis in tapeand reel

Weight : 0.25g.

3.3

2.0

4.2

2.0

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of

use of such information nor forany infringement of patents or other rights of third parties which may result from its use. No license is granted by

implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to

change without notice. This publication supersedes and replaces all information previously supplied.

STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-

proval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics

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5/5

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