首页 |元器件品牌

ST13007FP [STMICROELECTRONICS]

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR; 高压快速开关NPN功率晶体管
ST13007FP
型号： ST13007FP
厂家： ST    ST
描述：

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
高压快速开关NPN功率晶体管

晶体 开关 晶体管 功率双极晶体管 高压 局域网
文件： 总6页 (文件大小：70K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
ST13007FP  
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
■
■
■
■
HIGH VOLTAGE CAPABILITY  
NPN TRANSISTOR  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLEOPERATION  
■
■
■
VERY HIGH SWITCHING SPEED  
FULLY CHARACTERIZED AT 125 oC  
LARGE RBSOA  
3
2
APPLICATIONS  
1
■
ELECTRONIC BALLASTSFOR  
FLUORESCENT LIGHTING  
TO-220FP  
■
SWITCH MODE POWER SUPPLIES  
DESCRIPTION  
The device is manufactured using high voltage  
Multi Epitaxial Planar technology for high  
switching speeds and high voltage capability.  
They use a Cellular Emitter structure to enhance  
switching speeds.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCEV  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = -1.5V)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
700  
V
V
400  
9
V
8
A
ICM  
Collector Peak Current  
16  
A
IB  
Base Current  
4
A
IBM  
Base Peak Current  
8
36  
A
o
Ptot  
Tstg  
Tj  
Total Dissipation at Tc ≤ 25 C  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/6  
June 1998  
ST13007FP  
THERMAL DATA  
Rthj-case Thermal Resistance Junction-case  
Max  
3.47  
oC/W  
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)  
Symbol  
Parameter  
Test Conditions  
VCE = rated VCEV  
VCE = rated VCEV Tc = 100 oC  
Min.  
Typ.  
Max.  
Unit  
ICEV  
Collector Cut-off  
Current (VBE = -1.5V)  
1
5
mA  
mA  
IEBO  
Emitter Cut-off Current VEB = 9 V  
(IC = 0)  
1
mA  
VCEO(sus) Collector-Emitter  
Sustaining Voltage  
IC = 10 mA  
400  
V
VCE(sat)  
Collector-Emitter  
Saturation Voltage  
IC = 2 A  
IC = 5 A  
IC = 8 A  
IC = 5 A  
IB = 0.4 A  
IB = 1 A  
IB = 2 A  
IB = 1 A  
1
2
3
3
V
V
V
V
Tc = 100 oC  
Tc = 100 oC  
VBE(sat)  
Base-Emitter  
Saturation Voltage  
IC = 2 A  
IC = 5 A  
IC = 5 A  
IB = 0.4 A  
IB = 1 A  
IB = 1 A  
1.2  
1.6  
1.5  
V
V
V
hFE  
DC Current Gain  
IC = 2 A  
Group A  
Group B  
IC = 5 A  
VCE = 5 V  
15  
26  
5
28  
40  
30  
VCE = 5 V  
INDUCTIVE LOAD  
Storage Time  
Fall Time  
IC = 5 A  
IB1 = 1 A  
L = 200 µH  
VCL = 250 V  
IB2 = -2 A  
ts  
tf  
1.6  
60  
2.5  
110  
ms  
ns  
INDUCTIVE LOAD  
Storage Time  
Fall Time  
IC = 5 A  
IB1 = 1 A  
VCL = 250 V  
IB2 = -2 A  
ts  
2.3  
110  
µs  
ns  
L = 200 µH Tc = 125 oC  
tf  
* Pulsed: Pulse duration = 300 µs, duty cycle 2 %  
Note : Product is pre-selected inDC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups  
according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.  
2/6  
ST13007FP  
Safe Operating Areas  
Derating Curve  
DC Current Gain  
DC Current Gain  
Collector Emitter Saturation Voltage  
Base Emitter Saturation Voltage  
3/6  
ST13007FP  
InductiveFall Time  
InductiveStorage Time  
Reverse Biased SOA  
4/6  
ST13007FP  
TO-220FP MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
4.4  
TYP.  
MAX.  
4.6  
2.7  
2.75  
0.7  
1
MIN.  
0.173  
0.098  
0.098  
0.017  
0.030  
0.045  
0.045  
0.195  
0.094  
0.393  
MAX.  
0.181  
0.106  
0.108  
0.027  
0.039  
0.067  
0.067  
0.204  
0.106  
0.409  
A
B
2.5  
D
2.5  
E
0.45  
0.75  
1.15  
1.15  
4.95  
2.4  
F
F1  
F2  
G
1.7  
1.7  
5.2  
2.7  
10.4  
G1  
H
10  
L2  
L3  
L4  
L6  
L7  
Ø
16  
0.630  
28.6  
9.8  
15.9  
9
30.6  
10.6  
16.4  
9.3  
1.126  
0.385  
0.626  
0.354  
0.118  
1.204  
0.417  
0.645  
0.366  
0.126  
3
3.2  
L3  
L6  
L7  
¯
1 2 3  
L4  
L2  
5/6  
ST13007FP  
Information furnished is believed tobe accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is  
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are  
subject tochange without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  
are not authorized for use as critical componentsin life support devices or systems without express written approval of STMicroelectronics.  
The ST logo isa trademarkof STMicroelectronics  
1998 STMicroelectronics – Printed in Italy – All Rights Reserved  
STMicroelectronicsGROUP OF COMPANIES  
Australia - Brazil - Canada- China - France- Germany- Italy - Japan - Korea- Malaysia - Malta - Mexico - Morocco - The Netherlands -  
Singapore - Spain - Sweden- Switzerland- Taiwan - Thailand - United Kingdom- U.S.A.  
.
6/6  

相关型号：

ST13007N

 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
STMICROELECTR

ST13007N-A

 暂无描述
STMICROELECTR

ST13007NFP

 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
STMICROELECTR

ST13007NFP-A

 8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220FP, 3 PIN
STMICROELECTR

ST13007NFP-B

 8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220FP, 3 PIN
STMICROELECTR

ST13008

 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 12A I(C) | TO-220AB
ETC

ST13009

 High voltage fast-switching NPN power transistor
STMICROELECTR

ST1300AAA-28.6363

 Oscillator, 1.5MHz Min, 28.6363MHz Max, 28.6363MHz Nom, Hybrid,
DIODES

ST1300AAAA-1.5000

 Oscillator, 1.5MHz Min, 28.6363MHz Max, 1.5MHz Nom, Hybrid,
DIODES

ST1300AAAA-FREQ(T)

 LVCMOS Output Clock Oscillator, 1.5MHz Min, 28.6363MHz Max
PERICOM

ST1300AAAA-FREQ-OUT27

 HCMOS Output Clock Oscillator, 1.5MHz Min, 28.6363MHz Max, FULL SIZE RESISTANCE WELDED, METAL, DIP-6
DIODES

ST1300AAAAJ-28.6363

 Oscillator, 1.5MHz Min, 28.6363MHz Max, 28.6363MHz Nom, Hybrid,
DIODES
©2020 ICPDF网 联系我们和版权申明