ST1S09PU [STMICROELECTRONICS]

2A, 1.5 MHz PWM step-down switching regulator with synchronous rectification; 2A ， 1.5 MHz的PWM降压型开关稳压器具有同步整流


型号：	ST1S09PU
厂家：	ST
描述：	2A, 1.5 MHz PWM step-down switching regulator with synchronous rectification 2A ， 1.5 MHz的PWM降压型开关稳压器具有同步整流稳压器开关式稳压器或控制器电源电路开关式控制器
文件：	总18页 (文件大小：417K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ST1S09

2A, 1.5 MHz PWM step-down switching regulator

with synchronous rectification

Features

■ 1.5MHz fixed frequency PWM with current

control mode

■ 2A output current capability

■ Typical efficiency: > 90%

■ 2% DC output voltage tolerance

■ Two versions available: Power Good or Inhibit

■ Integrated output over-voltage protection

DFN6 (3x3mm)

■ Non switching quiescent current: (typ) 1.5mA

over temperature range

■ R

(typ) 100mΩ

DSON

Moreover, since the required synchronous

rectifier is integrated, the number of the external

components is reduced to minimum: a resistor

divider, an inductor and two capacitors. The

Power Good function continuously monitors the

output voltage. An open drain power good flag is

released when the output voltage is within

regulation. In addition, a low output ripple is

guaranteed by the current mode PWM topology

and by the use of low E.S.R. SMD ceramic

capacitors. The device is thermally protected and

the output current limited to prevent damages due

to accidental short circuit. The ST1S09 is

available in the DFN6 3x3mm package.

■ Utilizes tiny capacitors and inductors

■ Operating junction temp. -30°C to 125°C

■ Available in DFN6 3x3mm exposed pad

Description

The ST1S09 is a step-down DC-DC converter

optimized for powering low output voltage

applications. It supplies a current in excess of 2A

over an input voltage range from 2.7V to 6V.

A high PWM switching frequency (1.5MHz) allows

the use of tiny surface-mount components.

Table 1.

Devices summary

Order codes

Packaging

Package

ST1S09PU

ST1S09APU ⁽¹⁾

ST1S09IPU

ST1S09PUR

ST1S09APUR

ST1S09IPUR

DFN6D (3x3 mm)

1. Available on request.

July 2007

Rev. 2

1/18

www.st.com

ST1S09

Contents

Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Typical performance characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Typical application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

2/18

ST1S09

Diagram

Figure 1. Schematic diagram

(*) Only for ST1S09IPU

(**) Only for ST1S09PU

3/18

Pin configuration

ST1S09

Pin configuration

Figure 2.

Pin connections (top view)

ST1S09

ST1S09A

ST1S09I

Table 2.

Pin N°

Pin description

Symbol

Name and function

GND

Feedback voltage

System ground

Switching pin

V_{IN_SW}

V_{IN_A}

Power supply for the MOSFET switch

Power supply for analog circuit

INH/PG/NC

Inhibit (to turn off the device) / Power Good / Not Connected.

Exposed

Pad

To be connected to PCB ground plane for optimal electrical and thermal

performance.

GND

4/18

ST1S09

Maximum ratings

Table 3.

Absolute maximum ratings

Symbol

V_{IN_SW}

Parameter

Value

Unit

Positive power supply voltage

Inhibit voltage (I version)

-0.3 to 7

V_{IN_A}

V_INH

-0.3 to V_I+ 0.3

-0.3 to 7

-0.3 to 3

SWITCH Voltage Max. voltage of output pin

V_FB

Feedback voltage

Power Good open drain

-0.3 to 7

-40 to 150

-65 to 150

260

T_J

Max junction temperature

Storage temperature range

Lead temperature (soldering) 10 sec

°C

T_STG

T_LEAD

Note:

Absolute Maximum Ratings are those values beyond which damage to the device may

occur. Functional operation under these conditions is not implied.

Table 4.

Symbol

Thermal data

Parameter

Thermal resistance junction-case

Value

Unit

R_thJC

R_thJA

°C/W

Thermal resistance junction-ambient

Table 5.

ESD Performance

Parameter

Symbol

Test conditions

Value

Unit

ESD

ESD protection voltage

HBM

500

5/18

Electrical characteristics

ST1S09

Electrical characteristics

Table 6.

Electrical characteristics for ST1S09PU Refer to Figure 21. application circuit

= V = 5V, V = 1.2V, C1 = 4.7µF, C2 = 22µF, L1 = 2.7µH, T = -30 to 125°C

IN_SW

IN_A

(unless otherwise specified. Typical values are referred to 25°C)

Symbol

Parameter

Feedback voltage

Test conditions

Min.

Typ.

Max. Unit

I_FB

V_I

784

800

816

600

5.5

3.9

V_FBpin bias current

Input voltage

I_O= 10mA to 2A

4.5

3.5

V_IRising

3.7

UV_LO

Under voltage lock out threshold

Hysteresis

150

Over voltage protection

threshold

V_Orising

V_Ofalling

1.05 V_O1.1 V_O

OVP

Over voltage protection

hysteresis

I_OVP

I_Q

Overvoltage clamping current

Quiescent current

V_O= 1.2V

300

Not switching

1.5

2.5

I_O

Output current

V_I= 4.5 to 5.5V Note: 1

V_I= 4.5V to 5.5V, I_O= 100mA

Note: 1

%V_O/

ΔV_I

%V_O/ΔV_IOutput line regulation

0.16

0.2

%V_O/ΔI_OOutput load regulation

I_O= 10mA to 2A Note: 1

0.6

1.8

MHz

PWMf_SPWM switching frequency

V_FB= 0.65V

1.2

1.5

D_MAX

Maximum duty cycle

Power good output threshold

Power good output voltage low

0.92 V_O

I_SINK= 6mA open drain output

I_SW= 750 mA

0.4

3.5

_DSON-N NMOS switch on resistance

0.1

2.9

R_DSON-P PMOS switch on resistance

I_SW= 750 mA

I_SWL

Switching current limitation

Note: 1

2.5

I_O= 10mA to 100mA, V_O= 3.3V

I_O= 100mA to 2A, V_O= 3.3V

Efficiency Note: 1

150

T_SHDN

T_HYS

Thermal shutdown

°C

Thermal shutdown hysteresis

I_O= 100mA to 1A, T_A= 25°C

t_R= t_F≥ 200ns, Note: 1

%V_O/ΔI_OLoad transient response

-10

+10

%V_O

I_O= 10mA to I_O= short,

T_A= 25°C Note: 1

%V_O/ΔI_OShort circuit removal response

Note:

Guaranteed by design, but not tested in production.

6/18

ST1S09

Table 7.

Symbol

Electrical characteristics

Electrical characteristics for ST1S09IPU Refer to Figure 22. application circuit

= V = V = 5V, V = 1.2V, C1 = 4.7µF, C2 = 22µF, L1 = 2.7µH,

T = -30 to 125°C (unless otherwise specified. Typical values are referred to 25°C)

IN_SW

IN_A

INH

Parameter

Feedback voltage

Test conditions

Min.

Typ.

Max. Unit

I_FB

V_I

784

800

816

600

V_FBpin bias current

Minimum input voltage

I_O= 10mA to 2A

2.7

Over voltage protection

threshold

V_Orising

V_Ofalling

1.05 V_O1.1 V_O

OVP

Over voltage protection

hysteresis

_INH> 1.2V, not switching

1.5

2.5

µA

I_Q

I_O

Quiescent current

Output current

V_INH< 0.4V, T = - 30°C to 85°C

V_I= 2.7 to 5.5V Note: 1

Device ON, V_I= 2.7 to 5.5V

Device ON, V_I= 2.7 to 5V

Device OFF

1.3

1.2

V_INH

Inhibit threshold

Inhibit pin current

0.4

I_INH

µA

V_I= 2.7V to 5.5V, I_O= 100mA

Note: 1

%V_O/

ΔV_I

%V_O/ΔV_IOutput line regulation

0.16

0.2

%V_O/

ΔI_O

%V_O/ΔI_OOutput load regulation

I_O= 10mA to 2A Note: 1

0.6

1.8

PWMf_SPWM switching frequency

V_FB= 0.65V

1.2

1.5

MHz

D_MAX

R_DSON-N NMOS switch on resistance

_DSON-P PMOS switch on resistance

Maximum duty cycle

I_SW= 750 mA

0.1

2.9

I_SW= 750 mA

I_SWL

Switching current limitation

Note: 1

2.5

3.5

I_O= 10mA to 100mA, V_O= 3.3V

I_O= 100mA to 2A, V_O= 3.3V

Efficiency Note: 1

150

T_SHDN

T_HYS

Thermal shutdown

°C

Thermal shutdown hysteresis

I_O= 100mA to 1A, T_A= 25°C

t_R= t_F≥ 200ns, Note: 1

%V_O/ΔI_OLoad transient response

-10

+10

%V_O

I_O= 10mA to I_O= short,

T_A= 25°C Note: 1

%V_O/ΔI_OShort circuit removal response

Note:

Guaranteed by design, but not tested in production.

7/18

Typical performance characteristics

ST1S09

Typical performance characteristics

(L = 3.3µH, C = 4.7µF, C = 22µF, unless otherwise specified)

Figure 3.

Voltage feedback vs temperature

Figure 4.

Feedback pin bias current vs temp.

840

830

820

810

800

790

780

770

760

840

740

640

540

440

340

240

140

V_I=5V, I_O=10mA

V_I=5V

V_O@1.2V

-60

-75 -50 -25

25 50

T [°C]

75 100 125 150 175

-75 -50 -25

25 50 75 100 125 150 175

T [°C]

Figure 5.

Quiescent current non switching vs Figure 6.

temperature

Inhibit voltage vs temperature

2.5

1.6

V_I=5V

V_O@1.2V

OFF

1.4

1.2

1.5

0.8

0.6

0.4

0.2

0.5

V_I=5V, I_O=from 10mA to 2A

-75 -50 -25

75 100 125 150 175

-75 -50 -25

25 50 75 100 125 150 175

T [°C]

Figure 7.

Inhibit voltage vs input voltage

Figure 8.

Output voltage vs input voltage

1.40

1.20

1.00

0.80

0.60

0.40

0.20

V_O@1.2V

1.6

1.4

1.2

V_I=from 2.7 to 5.5V, I_O=2A

OFF

0.8

0.6

0.4

0.2

V_CC=V_INH=from 0 to 5.5V, I_O=2A

0.00

V_I[V]

8/18

ST1S09

Typical performance characteristics

Figure 9.

Line regulation vs temperature

Figure 10. Load regulation vs temperature

1.1

0.8

0.6

0.4

0.2

V_I= 5V, I_Ofrom10mA to 2A

V_O@1.2V

V_I= from 2.7V to 5.5V, I_O= 100mA

0.9

0.7

0.5

0.3

-0.2

-0.4

-0.6

-0.8

-1

0.1

-0.1

-0.3

-0.5

-75 -50 -25

25 50 75 100 125 150 175

-75 -50 -25

25 50 75 100 125 150 175

T [°C]

Figure 11. PWM Switching frequency vs

temperature

Figure 12. Maximum duty cycle vs

temperature

1.9

1.8

1.7

1.6

1.5

1.4

1.3

1.2

1.1

V_O@1.2V

V_I=5V, V_FB=0.6V

V_O@3.3V

-50

V_I=5V, V_FB=0.6V

-75 -50 -25

50 75 100 125 150 175

-75

-25

100

125

150

175

T [°C]

Figure 13. Under voltage lock out threshold

vs temperature

Figure 14. Efficiency vs output current

3.9

3.8

3.7

3.6

3.5

3.4

3.3

V_O=3.3V

_O=1.2V

V_IN=5V

3.2

3.1

V_O@1.2V

I_O=10mA

500

1000

Iout [mA]

1500

2000

-75 -50 -25

75 100 125 150 175

T [°C]

9/18

Typical performance characteristics

Figure 15. Efficiency vs temperature

ST1S09

Figure 16. Over voltage protection vs

temperature

1.4

100

Resistor 1.2k from V_Iand V_SW

V_O=3.3V

1.3

V_SW=1.2V

V_I=5V, V_O=3.3V, C_FB=100nF

1.2

1.1

V_O=1.2V

OVP ON

V_I=5V, I_O=100mA

0.9

0.8

-75 -50 -25

25 50 75 100 125 150 175

-75 -50 -25

25 50 75 100 125 150 175

T [°C]

Figure 17. Over voltage protection vs

temperature

Figure 18. Over voltage protection hyst. vs

temperature

1.4

Resistor 1.2k from V_Iand V_SW

1.3

V_SW=0.8V

V_I=5V, V_O=3.3V, C_FB=100nF

V_SW=0.8V

V_I=5V, V_O=3.3V, C_FB=100nF

1.2

1.1

OVP ON

0.9

0.8

-75 -50 -25

25 50 75 100 125 150 175

-75 -50 -25

25 50 75 100 125 150 175

T [°C]

Figure 19. Load transient

Figure 20. Inhibit transient

V_INH

V_O

I_O

V_O

I_O

V_I=5V, V_INH=0 to 2V, I_O=2A, L=3.3µH, C_I=4.7µF, C_O=22µF,

V_O=3.3V

V_I=5V, V_O=1.2V, I_O=100mA to1A, L=3.3µH, C_I=4.7µF,

C_O=22µF

10/18

ST1S09

Typical application

Figure 21. Application circuits

Figure 22. Application circuits

11/18

Application information

ST1S09

Application information

The ST1S09 is an adjustable current mode PWM step-down DC/DC converter with internal

2A power switch, packaged in a DFN6 3x3mm.

The device is a complete 2A switching regulator with its internal compensation eliminating

the need for additional components.

The constant frequency, current mode, PWM architecture and stable operation with ceramic

capacitors results in low, predictable output ripple.

The over-voltage protection circuit acts when the output voltage is over 10% of the rated

voltage and within 200ns the low side MOSFET will be turned on to clamp the output

transient. The current limit for clamping is about 400mA. When the output voltage drops to

about 5% above the nominal level, the device returns to nominal closed loop switching

operation.

The open drain Power Good (PG) pin is released when the output voltage is higher than

0.92 x V

. If the output voltage is below 0.92 x V , the PG pin goes to low impedance.

O_NOM

Other circuits fitted to the device protection are the Thermal Shut-down block, which turns

off the regulator when the junction temperature exceeds 150°C (typ), and the cycle-by-cycle

Current Limiting, which provides protection against shorted outputs.

As an adjustable regulator, the ST1S09’s output voltage is determined by an external

resistor divider. The desired value is given by the following equation:

V = V [1+R1/R2]

To utilize the device, only a few components are required: an inductor, two capacitors and

the resistor divider. The inductor chosen must be able to reach peak current level without

saturating. Its value can be selected while taking into account that a large inductor value

increases the efficiency at low output current and reduces output voltage ripple, while a

smaller inductor can be chosen when it is important to reduce package size and the total

cost of the application. Finally, the ST1S09 has been designed to work properly with X5R or

X7R SMD ceramic capacitors both at the input and at the output. These types of capacitors,

due to their very low series resistance (ESR), minimize the output voltage ripple. Other low

ESR capacitors can be used according to the need of the application without compromising

the correct functioning of the device.

12/18

ST1S09

Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK

packages. These packages have a Lead-free second level interconnect. The category of

second Level Interconnect is marked on the package and on the inner box label, in

compliance with JEDEC Standard JESD97. The maximum ratings related to soldering

conditions are also marked on the inner box label. ECOPACK is an ST trademark.

ECOPACK specifications are available at: www.st.com.

13/18

Package mechanical data

ST1S09

DFN6D (3x3) Mechanical Data

mm.

inch.

Typ.

Dim.

Min.

Typ.

Max.

1.00

0.05

Min.

0.031

Max.

0.80

0.039

0.02

0.20

0.001

0.002

0.008

0.23

2.90

2.23

2.90

1.50

0.45

3.10

2.50

3.10

1.75

0.009

0.114

0.088

0.114

0.059

0.018

0.122

0.098

0.122

0.069

3.00

0.118

0.95

0.037

0.30

0.40

0.50

0.012

0.016

0.020

7946637B

14/18

ST1S09

Package mechanical data

Figure 23. DFN6 (3x3) Footprint Recommended Data

15/18

Package mechanical data

ST1S09

Tape & Reel QFNxx/DFNxx (3x3) Mechanical Data

mm.

Typ.

inch.

Typ.

Dim.

Min.

Max.

330

Min.

Max.

12.992

0.519

12.8

20.2

13.2

0.504

0.795

2.362

18.4

0.724

3.3

1.1

0.130

0.043

0.157

0.315

16/18

ST1S09

Revision history

Table 8.

Revision history

Revision

Date

Changes

18-Jun-2007

05-Jul-2007

First Issue.

Removed incorrect watermark.

17/18

ST1S09

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18/18

ST1S09PU [STMICROELECTRONICS]

相关型号：

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