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ST33ZP24AQFNPVSK [STMICROELECTRONICS]

SPECIALTY MICROPROCESSOR CIRCUIT;
ST33ZP24AQFNPVSK
型号: ST33ZP24AQFNPVSK
厂家: ST    ST
描述:

SPECIALTY MICROPROCESSOR CIRCUIT

外围集成电路
文件: 总17页 (文件大小:367K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

ST3400

N Channel Enhancement Mode MOSFET

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STANSON

ST3400S23RG

N Channel Enhancement Mode MOSFET

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STANSON

ST3400S23RG_V2

N Channel Enhancement Mode MOSFET

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ETC

ST3400SRG

The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

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STANSON

ST3401

P Channel Enhancement Mode MOSFET

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STANSON

ST3401M23RG_V2

P Channel Enhancement Mode MOSFET

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ETC

ST3401S23RG

P Channel Enhancement Mode MOSFET

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STANSON

ST3401SRG

ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.

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STANSON

ST3402

N Channel Enhancement Mode MOSFET

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STANSON

ST3402S23RG

N Channel Enhancement Mode MOSFET

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STANSON

ST3403

P Channel Enchancement Mode MOSFET

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STANSON

ST3406

N Channel Enhancement Mode MOSFET

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STANSON

ST3406S23RG

N Channel Enhancement Mode MOSFET

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STANSON

ST3406SRG

ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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STANSON

ST3407

P Channel Enhancement Mode MOSFET

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STANSON

ST3407S23RG

P Channel Enhancement Mode MOSFET

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STANSON

ST3407S23RG_V2

P Channel Enhancement Mode MOSFET

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ETC

ST3407SRG

ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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STANSON

ST3413

P Channel Enhancement Mode MOSFET

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STANSON

ST3413A_V2

P Channel Enhancement Mode MOSFET

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ETC