ST662ABD [STMICROELECTRONICS]

DC-DC CONVERTER FROM 5V TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY; DC- DC转换器从5V至12V , 0.03A闪存编程电源
ST662ABD
型号: ST662ABD
厂家: ST    ST
描述:

DC-DC CONVERTER FROM 5V TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY
DC- DC转换器从5V至12V , 0.03A闪存编程电源

转换器 稳压器 开关式稳压器或控制器 闪存 电源电路 开关式控制器 光电二极管 信息通信管理 DC-DC转换器
文件: 总12页 (文件大小:133K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ST662A  
DC-DC CONVERTER FROM 5V TO 12V, 0.03A  
FOR FLASH MEMORY PROGRAMMING SUPPLY  
OUTPUT VOLTAGE: 12V ± 5%  
SUPPLY VOLTAGE RANGE: 4.5V TO 5.5V  
GUARANTEED OUTPUT CURRENT UP TO  
30mA  
VERY LOW QUIESCENT CURRENT: 100µA  
LOGIC CONTROLLED ELECTRONIC  
SHUTDOWN: 1µA  
DIP-8  
JUST CAPACITORS NEEDED (NO  
INDUCTOR)  
DESCRIPTION  
The ST662A is a regulated charge pump DC-DC  
converter. It provides 12V ± 5% output voltage to  
program byte-wide flash memory, and can supply  
30mA output current from input as low as 4.75V  
A logic controlled shut down pin that interfaces  
directly with microprocessor reduces the sypply  
current to only 1µA  
SO-8  
TYPICAL APPLICATION CIRCUIT  
1/12  
June 1997  
ST662A  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
-0.3 to 6  
-0.3 to VCC+0.3  
50  
Unit  
V
Vcc  
DC Input Voltage to GND  
SHDN Shutdown Voltage  
V
Io  
Output Current Continuous  
Power Dissipation  
mA  
mW  
Ptot  
Top  
500  
Operating Ambient Temperature Range (for AC SERIES)  
(for AB SERIES)  
0 to 70  
- 40 to 85  
oC  
oC  
Tstg  
Storage Temperature Range  
- 40 to 150  
oC  
Absolute Maximum Rating are those values beyond which damage to the device may occur.  
Functional operation under these condition is not implied.  
CONNECTION DIAGRAM AND (top view)  
PIN CONNECTIONS  
Pin No  
Symbol  
C1-  
Name and Function  
1
2
3
4
5
6
7
8
Negative Terminal For The First Charge Pump Capacitor  
Positive Terminal For The First Charge Pump Capacitor  
Negative Terminal For The Second Charge Pump Capacitor  
Positive Terminal For The Second Charge Pump Capacitor  
Supply Voltage  
C1+  
C2-  
C2+  
VCC  
VOUT  
GND  
SHDN  
12V Output Voltage VOUT = VCC When in Sshutdown Mode  
Ground  
ActiveHigh C-MOS logic level Shutdown Input. SHDN is internally pulled up to  
CC. Connect to GND for Normal Operation. In Shutdown mode the charge  
V
pumps are turned off and VOUT = VCC  
ORDERING NUMBERS  
Type  
DIP-8  
ST662ABN  
SO-8 (*)  
ST662AB  
ST662ABD  
ST662ACD  
ST662AC  
ST662ACN  
(*) AVAILABLE IN TAPE AND REEL WITH ”-TR” SUFFIX  
2/12  
ST662A  
ELECTRICAL CHARACTERISTICS (Refer to the test circuits, VCC = 4.5V to 5.5V Ta = Tmin to Tmax  
unless otherwise specified. Typical Value are referred at Ta = 25 oC)  
Symbol  
Vo  
Parameter  
Output Voltage  
Test Conditions  
Io = 0 mA to 20 mA  
Min.  
11.4  
11.4  
Typ.  
12  
Max.  
12.6  
12.6  
500  
10  
Unit  
V
Vo  
Output Voltage  
Io = 0 mA to 30 mA VCC = 4.75 to 5.5 V  
No Load, VSHDN = 0  
12  
V
IQ1  
Quiescent Current  
Shutdown Current  
Shutdown Pin Current  
100  
1
µA  
µA  
IQ2  
No Load, VSHDN = VCC  
ISH  
VSHDN = 0V, VCC = 5V  
VSHDN = VCC = 5V  
-50  
2.4  
-12  
0
-5  
µA  
µA  
Vil  
Shutdown Input Low Threshold  
0.4  
V
V
Vih  
Shutdown Input High  
Threshold  
fo  
ν
Oscillator Frequency  
Power Efficecy  
VCC = 5V, Io = 30 mA  
400  
72  
1
KHz  
%
VCC = 5V, Io = 30 mA  
Rsw  
VCC - VOUT Switch Impedance VSHDN = VCC = 5V, Io = 100 µA  
2
KΩ  
Do not overload or short the Output to Ground. If the above conditions are observerd, the device may be damaged.  
Output Voltage vs Temperature  
Output Voltage vs Temperature  
Supply Current vs Temperature  
Supply Currernt vs Supply Voltage  
3/12  
ST662A  
SHDN Pin Current vs Temperature  
Output Voltage vs Shutdown Input Voltage  
Output Voltage vs Shutdown Input Voltage  
Output Voltage vs Shutdown Input Voltage  
Test Circuit  
4/12  
ST662A  
DESCRIPTION  
Figure 1: OperatingPrinciple Circuit  
The ST662 is an IC developed to provide a 12V  
regulated output 30mA from voltage input as low  
as 4.75 without any inductors. It is useful for a  
wide range of applications and its performances  
makes it ideal for flash memory programming  
supply.  
An evaluation kit is provided to facilitate the  
application. This include a single-side demo  
board  
designed  
for  
surface-mount  
components.The operating principle of ST662  
(see fig. 1) is to charge C1 and C2 capacitor by  
closing the S1 switch (while S2 is opened) at the  
VCC voltage. After S1 will be opened and S2  
closed so that C1 and C2 capacitors are placed  
in series one to each other, and both are in series  
with Vin.The sum of VC1 and VC2 and Vin is  
applied to the capacitor C4. This works as  
voltage tripler. An amplifier error checks the  
output voltage and blocks the oscillator if the  
output voltage is greater than 12V.  
The shutdown pin is internally pulled to VCC  
.
When it is held low the output voltage rises to  
+12V. Fig.2 shows the transition time of the shut  
down pin when the VSHDN goes from 5V to 0V.  
Input logic levels of this input are CMOS  
compatible.  
Applying a logic high at this input, the VOUT  
oscillator will be blocked and the VOUT will reach  
theVIN value by D1. In this condition ICC will be  
low as 1µA. The fig.3 shows the transition time  
of the shut down pin when the VSHDN goes from  
0V to 5V.  
Figure 2: Exiting Shutdown  
Figure 3: Entering Shutdown  
SHDN  
5V  
5V  
SHDN  
0V  
0V  
Vout  
12V  
12V  
Vout  
5V  
5V  
TIME= 20us/DIV, VERTICAL = 5V/DIV  
TIME= 1ms/DIV, VERTICAL = 5V/DIV  
NOTE: VCC = 5V, IOUT = 200µA  
NOTE: VCC = 5V, IOUT = 200µA  
5/12  
ST662A  
APPLICATION CIRCUIT  
C3 and C4 must have low ESR in order to  
minimize the output ripple. Their values can be  
reduced to 2µF and 1µF, respectively, when  
using ceramic capacitors, but must be of 10µF or  
larger if aluminium electrolytic are chosen.  
C5 must be placed as close to the device as  
possible and could be omitted if very low output  
noise performance are not required.  
Based on fast charge/discharge of capacitors,  
this circuit involves high di/dt values limited only  
by Ron of switches. This implies a critical layout  
design due to the need to minimize inductive  
paths and place capacitors as close as possible  
to the device.  
A good layout design is strongly recommended  
for noise reason. For best performance, use very  
short connections to the capacitors and the  
values shown in table 1.  
Fig  
4 and Fig 5 show, respectively, our  
EVALUATION kit layout and the relatively  
electrical shematic.  
Figure 4: KIT Lay-out  
Figure 5: Electrical Schematic  
Table 1: List of Components  
CAPACITOR  
TYPE  
Ceramic  
VALUE (µF)  
0.22  
Charge Pump C1  
Charge Pump C2  
Input C3  
Ceramic  
0.22  
Electrolytic Tantalum  
Electrolytic Tantalum  
Ceramic  
4.7  
Output C4  
4.7  
Decoupling C5  
0.1  
6/12  
ST662A  
ST662A OUTPUT PERFORMANCE  
Output Voltage vs Output Current  
Efficency vs Output Current  
Load Transient Response  
Line Transient Response  
SHDN  
Vout  
Iout  
20mA/div  
5.5V  
4.5V  
Vin  
1V/div  
Vout  
200mV/div  
Vout  
100mV/div  
TIME= 1ms/DIV  
TIME= 1ms/DIV  
NOTE: VCC = 5V, IOUT = 0 to 30mA  
NOTE: VCC = 4.5 to 5.5V, IOUT = 30mA  
7/12  
ST662A  
HOW TO INCREASE OUTPUT CURRENT OR  
OUTPUT VOLTAGE CAPABILITY  
different capacitors, each of them of half value,  
very close to the respective integrated circuit.  
Fig. 8 show the Output Current capability of the  
proposedcircuit.  
If an output voltage greater than 12V is required,  
it’s possible to realize the circuit of the following  
diagram (figure 7). The relevant Output Current  
capability is shown in figure 9 in which is shown  
the output voltage vs load current.  
Current capability is limited by Ron of internal  
switches. It is possible to increase it connecting in  
parallel two or more ST662A devices; each one  
of them can supply 30mA. The figure 6 shows the  
electric schematic. The capacitors C3, C4 and C5  
must be placed very close to the ICs on the  
board. If this is not possible, you can place two  
Figure 6: Application Circuit for Two ST662A in Parallel  
Table 2: List of Components  
CAPACITOR  
TYPE  
VALUE (µF)  
0.22  
0.22  
0.22  
0.22  
10  
C1A  
C2A  
C1B  
C2B  
Ceramic  
Ceramic  
Ceramic  
Ceramic  
C3  
C4  
C5  
Electrolytic Tantalum  
Electrolytic Tantalum  
Ceramic  
10  
0.22  
8/12  
ST662A  
Figure 7: Application Circuit for Output Voltage greater than 12V  
Figure 8: Output Voltage for the Application with  
Two Device in Parallel  
Figure 9: Output Voltage for Application with  
Output Voltage greater than 12V  
9/12  
ST662A  
Plastic DIP-8 MECHANICAL DATA  
mm  
inch  
TYP.  
0.130  
DIM.  
MIN.  
TYP.  
MAX.  
MIN.  
MAX.  
A
a1  
B
3.3  
0.7  
0.028  
0.055  
0.036  
1.39  
0.91  
1.65  
1.04  
0.065  
0.041  
B1  
b
0.5  
0.020  
b1  
D
E
0.38  
0.5  
9.8  
0.015  
0.020  
0.386  
8.8  
0.346  
0.100  
0.300  
0.300  
e
2.54  
7.62  
7.62  
e3  
e4  
F
7.1  
4.8  
0.280  
0.189  
I
L
3.3  
0.130  
Z
0.44  
1.6  
0.017  
0.063  
P001F  
10/12  
ST662A  
SO-8 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
TYP.  
MAX.  
1.75  
0.25  
1.65  
0.85  
0.48  
0.25  
0.5  
MIN.  
MAX.  
0.068  
0.009  
0.064  
0.033  
0.018  
0.010  
0.019  
A
a1  
a2  
a3  
b
0.1  
0.003  
0.65  
0.35  
0.19  
0.25  
0.025  
0.013  
0.007  
0.010  
b1  
C
c1  
D
45 (typ.)  
4.8  
5.8  
5.0  
6.2  
0.188  
0.228  
0.196  
0.244  
E
e
1.27  
3.81  
0.050  
0.150  
e3  
F
3.8  
0.4  
4.0  
1.27  
0.6  
0.14  
0.157  
0.050  
0.023  
L
0.015  
M
S
8 (max.)  
0016023  
11/12  
ST662A  
Information furnished is believed to be accurateand reliable. However, SGS-THOMSON Microelectronics assumes no responsabilityfor the  
consequences of use of such informationnor for any infringement of patents or other rights of third parties which may results from its use. No  
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned  
in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviously supplied.  
SGS-THOMSONMicroelectronics products are notauthorized for use as critical components in life support devices or systems without express  
written approval of SGS-THOMSON Microelectonics.  
1997 SGS-THOMSON Microelectronics- Printedin Italy - All Rights Reserved  
SGS-THOMSON Microelectronics GROUP OF COMPANIES  
Australia- Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - TheNetherlands -  
Singapore - Spain - Sweden - Switzerland- Taiwan - Thailand - United Kingdom- U.S.A  
.
12/12  

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